Page 1
GaAs Infrared Emitting Diodes
TO-46 Lensed Pack ag e — 940 nm
PACKAGE DIMENSIONS inch (mm)
CASE 24 TO-46 HERMETIC (Lensed)
CHIP SIZE: .018" X .018"
DESCRIPTION
This n arrow beam angl e TO-46 her metic emitt er contain s a large ar ea, double wir ebonded, GaAs, 940 nm IR ED chip suit able for
high er current pulse applicat i ons.
VTE1113
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating: -55°C to 125°C
Continuous Power Dissipation: 200 mW
Derate above 30°C: 2.11 mW/°C
Maximum Continuous Current: 100 mA
Derate above 30°C: 1.05 mA/°C
Peak Forward Current, 10 µs, 100 pps: 3.0 A
Temp. Coefficient of Power Output (Typ.): -.8%/°C
Maximum Reverse V oltage: 5.0V
Maximum Reverse Current @ V
= 5V: 10 µA
R
Peak Wavelength (Typical ): 940 nm
Junction Capacitance @ 0V, 1 MHz (Typ.): 35 pF
Response Time @ I
= 20 mA
F
Rise:1.0 µs Fall: 1.0 µs
Lead Soldering Temperature: 260°C
(1.6 mm from case, 5 seconds max.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 123-124)
Output Forward Drop
Irradiance
Part Number
E
e
2
mW/cm
Min. Typ. mm mm Min. Typ. Typ. Max.
VTE1113 12 15 36 6.4 156 30 1.0 1.9 2.5 ±10°
Condition I
distance Diameter mW/sr mW
Radiant
Intensity
e
Total Power
P
O
Test
Current
I
FT
mA
(Pulsed)
V
@ I
Volts
F
FT
Half Power Beam
Angle
θ
1/2
Typ.
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
127
Loading...