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Alternate Source/
VTD34F
Second Source Photodiodes
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
package. The package m aterial filters out visible li ght
but passes infrared. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. The photodiodes are designed
to provide excellent sensitivity at low levels of
irradiance.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -20°C to 80°C
Operating Temperature: -20°C to 80°C
(BPW34F INDUSTRY EQUIVALENT)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in
2
(7.45 mm2)
ELECTRO-O PT ICAL CHARACTERIS TIC S @ 25 °C
SYMBOL CHARACTERISTIC TEST CONDITIONS
Re Responsivity 0.5 mW/cm
V
TC V
t
R/tF
S
λ
range
V
θ
NEP Noise Equivalent Power 4.8 x 10
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
Open Circuit Voltage 0.5 mW/cm2, 940 nm 275 350 mV
OC
OCVOC
I
D
C
J
R
λ
p
BR
1/2
D* Specific Detectivity 5.7 x 10
Tem perature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 10 V 2 30 nA
Junction Capacitance @ 1 MHz, VR = 0 V 60 pF
Rise/Fall Time @ 1 kΩ Lead VR = 10 V, 833 nm 50 nsec
Sensitivity @ Peak 0.60 A/W
Spectral Application Range 725 1150 nm
Spectral Response - Peak 940 nm
Breakdown Voltage 40 V
Angular Resp.-50% Resp. Pt. ±50 Degrees
2
, 940 nm 15 µA
Min. Typ. Max.
VTD34F
-14
UNITS
WHz⁄
12
cm Hz
/ W
74
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