Page 1
Alternate Source/
VTD31AA
Second Source Photodiodes
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Planar silicon photodiode mounted on a two lead
ceramic substrate and coated with a thick layer of
clear epoxy. These diodes exhibit low dark current
under reverse bias and fast speed of response.
Storage Temperature: -20°C to 75°C
Operating Temperature: -20°C to 75°C
(CLD31AA INDUSTRY EQUIVALENT)
CASE 13 CERAMIC
CHIP ACTIVE AREA: .026 in
2
(16.73 mm2)
ELECTRO-O PT ICAL CHARACTERIS TICS @ 25°C
SYMBOL CHARACTERISTIC TEST CONDITIONS
I
TC I
V
TC V
S
λ
range
V
θ
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
Short Circuit Current H = 5 mW/cm2, 2850 K 150 225 µA
SC
SCISC
OC
OCVOC
I
D
C
J
R
λ
p
BR
1/2
Temperature Coefficient 2850 K .20 %/°C
Open Circuit Volt age H = 5 mW/cm2, 2850 K 350 mV
Tem perature Coefficient 2850 K -2.0 mV/°C
Dark Current H = 0, VR = 15 V 50 nA
Junction Capacitance H = 0, V = 0 V 500 pF
Sensitivity @ Peak .55 A/W
Spectral Application Range 400 1150 nm
Spectral Response - Peak 860 n m
Breakdown Voltage 5 V
Angular Resp.-50% Resp. Pt. ±60 Degrees
Min. Typ. Max.
VTD31AA
UNITS
72
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