Datasheet VNP5N07FI, VNK5N07FM, VND5N07-1, VND5N07 Datasheet (SGS Thomson Microelectronics)

VND5N07/VND5N07-1
VNP5N07FI/K5N07FM

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE V

VND5N07
VND5N07-1
VNP5N07FI
VNK5N07FM

■ LINEAR CURRENT LIMITATION

■ THERMALSHUTDOWN

■ SHORTCIRCUIT PROTECTION

■ INTEGRATEDCLAMP

■ LOW CURRENT DRAWN FROM INPUT PIN

■ DIAGNOSTICFEEDBACK THROUGH INPUT

clamp

70 V
70 V
70 V
70 V

R

DS(on)

0.2 Ω

0.2 Ω

0.2 Ω

0.2 Ω

I

lim

5A
5A
5A
5A

PIN

■ ESD PROTECTION

■ DIRECT ACCESS TO THE GATE OF THE

POWERMOSFET (ANALOGDRIVING)

■ COMPATIBLEWITH STANDARD POWER

MOSFET

DESCRIPTION

The VND5N07, VND5N07-1, VNP5N07FI and
VNK5N07FM are monolithic devices made using
SGS-THOMSON Vertical Intelligent Power M0
Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect

BLOCK DIAGRAM

3

1

DPAK

TO-252

ISOWATT220

IPAK

TO-251

3

2

1

SOT82-FM

3

2

1

the chip in harsh enviroments.
Faultfeedback can be detected by monitoringthe

voltageat the input pin.

June 1996

1/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

ABSOLUTEMAXIMUMRATING

Symbol Parameter Value Unit

V

V

Drain-source Voltage (Vin= 0 ) Internally Clam ped V

DS

V

Input Voltage 18 V

in

I

Drain Current Inte r nally Limited A

D

I

Reverse DC Output Current -7 A

R

Elect r os t at ic Discha rge (C= 100 pF,

esd

R=1. 5 KΩ)

P

T

Tot al Dis sipa t ion at Tc=25oC60249W

tot

T

Oper at ing Junction Tem perature Inte r nally Limited

j

T

Case Operating Temperature Internally Limited

c

Sto rage Tem perat ure -55 to 150

stg

THERMAL DATA

R

thj-case

R

thj-amb

Ther mal R es is t an ce J unc t i on-c ase
Max 3.75 5.2 14

Ther mal R es is t an ce J unc t i on-am b ient
Max 100 62.5 100

DPAK

IPAK

DPAK/IPAK ISOWAT T220 SOT82-FM

ISOWATT220 SOT-82FM

2000 V

o

C/W

o

C/W

o

C

o

C

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

CLAMP

Drain-source Clamp

ID= 200 mA Vin= 0 60 70 80 V

Volt age

V

CLTH

Drain-source Clamp

ID=2mA Vin=0 55 V

Thr eshold Vol ta ge

V

INCL

Input-Source Reverse

Iin=-1mA -1 -0.3 V

Clamp Voltage

I

DSS

I

ISS

Zer o I npu t V olt age
Drain Current (V

in

Supply Current from

V

=13V Vin=0

=0)

DS

=25V Vin=0

V

DS

VDS=0V Vin= 10 V 250 500 µA

50

200

Input Pin

ON (∗)

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

R

DS(on)

IN(th)

Input Thres hold
Volt age

St at ic Drain-sour ce On
Resistance

VDS=VinID+Iin=1mA 0.8 3 V

Vin=10V ID=2.5A

=5V ID=2.5A

V

in

0.200

0.280ΩΩ

µA
µA

2/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

ELECTRICAL CHARACTERISTICS (continued)

DYNAMIC

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on ductance

C

Out put Capacit anc e V D S = 13 V f = 1 MHz Vin= 0 200 300 pF

oss

SWITCHING(∗∗)

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

t

d(on)

t

d(off)

t

d(on)

t

d(off)

(di/dt)

Q

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay T ime

t

Fall T ime

f

Turn-on Delay Time

t

Rise Time

r

Turn-off Delay T ime

t

Fall T ime

f

Tur n-on Current Slope VDD=15V ID=2.5A

on

Total Input Charge VDD=12V ID=2.5A Vin= 10 V 18 nC

i

VDS=13V ID=2.5A 3 4 S

VDD=15V Id=2.5A

=10V R

V

gen

gen

=10Ω

(see figure 3)

VDD=15V Id=2.5A

=10V R

V

gen

= 1000 Ω

gen

(see figure 3)

50
60

150

40

150

400
3900
1100

100
100
300

80

250

600
5000
1600

80 A/µs

=10V R

V

in

gen

=10Ω

ns
ns
ns
ns

ns
ns
ns
ns

SOURCE DRAIN DIODE

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

V

(∗)ForwardOnVoltage ISD=2.5A Vin=0 1.6 V

SD

t

rr

Reverse Re covery

(∗∗)

Time
Reverse Re covery

(∗∗)

Q

rr

I

=2.5A di/dt=100A/µs

SD

=30V Tj=25oC

V

DD

(see test cir cuit, figure 5)

150

0.3

Charge

(∗∗)

I

RRM

Reverse Re covery

5.7

Current

PROTECTION

Symbol Parameter Test Cond ition s Min. Typ. Max. Unit

t

dlim

T

jsh

I

lim

Drain Current Limit Vin=10V VDS=13V

=5V VDS=13V

V

in

(∗∗) St ep Response

Current Lim it

Vin=10V

=5V

V

in

(∗∗) Overtem per at u r e

Shut dow n

(∗∗) O vertem perat ure Re s et 135

T

jrs

I

(∗∗) Fault Sink Current Vin=10V VDS=13V

gf

E

(∗∗) S i ngle Pulse

as

Avalanche Energy

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization

=5V VDS=13V

V

in

starting Tj=25oCVDD=20V

=10V R

V

in

=1KΩ L=10mH

gen

3.5

3.5
15

40

5
5

7
7

20
60

150

50
20

0.2 J

ns

µC

A

A
A

µs
µs

o

C

o

C

mA
mA

3/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

PROTECTION FEATURES

During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I

) flows into the Input pin in order to

iss

supplythe internalcircuitry.
The device integrates:

- OVERVOLTAGE CLAMP PROTECTION:

internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductiveloads.

- LINEAR CURRENT LIMITER CIRCUIT: limits

the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperaturethreshold T

jsh

.

- OVERTEMPERATURE AND SHORT CIRCUIT

PROTECTION: these are based on sensing
the chip temperatureand are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperaturecutout occurs at
minimum 150
restarted when the chip temperature falls
below135

o

C. The device is automatically

o

C.

- STATUS FEEDBACK: In the case of an

overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.

Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R

DS(on)

).

4/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

Thermal ImpedanceFor DPAK / IPAK

Derating Curve

ThermalImpedanceFor ISOWATT220

OutputCharacteristics

Transconductance

StaticDrain-SourceOnResistancevs Input
Voltage

5/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

StaticDrain-Source On Resistance

Input Charge vs Input Voltage

StaticDrain-SourceOnResistance

CapacitanceVariations

Normalized Input ThresholdVoltage vs
Temperature

6/14

Normalized On Resistance vs Temperature

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

Normalized On Resistance vs Temperature

Turn-onCurrent Slope

Turn-onCurrent Slope

Turn-off Drain-SourceVoltageSlope

Turn-offDrain-Source Voltage Slope

SwitchingTime ResistiveLoad

7/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

SwitchingTime Resistive Load

CurrentLimit vs JunctionTemperature

SwitchingTime ResistiveLoad

Step ResponseCurrent Limit

SourceDrain Diode Forward Characteristics

8/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

Fig. 1: Unclamped Inductive Load Test Circuits

Fig. 3: SwitchingTimesTest Circuits For

ResistiveLoad

Fig. 2: UnclampedInductive Waveforms

Fig. 4: InputCharge Test Circuit

Fig. 5: TestCircuit For Inductive Load Switching

And Diode Recovery Times

Fig. 6: Waveforms

9/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

TO-252 (DPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

10/14

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

TO-251 (IPAK) MECHANICALDATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

11/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

ISOWATT220MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181

B 2.5 2.7 0.098 0.106

D 2.5 2.75 0.098 0.108

E 0.4 0.7 0.015 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

mm inch

E

A

D

B

L3

L6

L7

¯

F1

F

G1

H

G

F2

123

L2

L4

P011G

12/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

SOT82-FM MECHANICALDATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.85 3.05 1.122 1.200
A1 1.47 1.67 0.578 0.657

b 0.40 0.60 0.157 0.236
b1 1.4 1.6 0.551 0.630
b2 1.3 1.5 0.511 0.590

c 0.45 0.6 0.177 0.236
D 10.5 10.9 4.133 4.291
e 2.2 2.8 0.866 1.102
E 7.45 7.75 2.933 3.051
L 15.5 15.9 6.102 6.260

L1 1.95 2.35 0.767 0.925

mm inch

P032R

13/14

VND5N07/VND5N07-1/VNP5N07FI/VNK5N07FM

Information furnished is believed to be accurate and reliable. However,SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information norfor any infringement of patents or otherrights of third parties which may resultsfrom its use. No
licenseis granted by implicationor otherwise underany patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publicationare subject to change withoutnotice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronicsproductsare notauthorized for useascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1996 SGS-THOMSONMicroelectronics- Printed in Italy - All Rights Reserved

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