Datasheet VN2110K1, VN2106N3 Datasheet (Supertex)

1

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

VN2106

VN2110

Package Options

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher­ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

Features

❏ Commercial and Military versions available
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C

ISS

and fast switching speeds

❏ High input impedance and high gain

Applications

❏ Motor controls
❏ Amplifiers
❏ Power supply circuits
❏ Converters
❏ Switches
❏ Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Note: See Package Outline section for dimensions.

N-Channel Enhancement-Mode
Vertical DMOS FETs

Order Number / Package

BV

DSS

/R

DS(ON)

BV

DGS

(max) TO-92 TO-236AB* Die

†

60V 4.0Ω VN2106N3 – —

100V 4.0Ω — VN2110K1 VN2110ND

†

MIL visual screening available

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Product marking for SOT-23:

N1A❋

where ❋ = 2-week alpha date code

Ordering Information

Absolute Maximum Ratings

Drain-to-Source Voltage BV

DSS

Drain-to-Gate Voltage BV

DGS

Gate-to-Source Voltage ± 20V

Operating and Storage Temperature -55°C to +150°C

Soldering Temperature* 300°C

* Distance of 1.6 mm from case for 10 seconds.

TO-236AB

(SOT-23)

top view

TO-92

S G D

SDG

2

Package I

D

(continuous)

✝

ID (pulsed) Power Dissipation*

θ

jc

θ

ja

I

DR

†

I

DRM

@ TC = 25°C °C/W °C/W

TO-92 0.3A 1.0A 1.0W 125 170 0.3A 1.0A
TO-236AB 0.2A 0.8A 0.36W (T

A

= 25°C) 200 350 0.2A 0.8A

†

ID (continuous) is limited by max rated Tj.

* Total for package.

Symbol Parameter Min Typ Max Unit Conditions

BV

DSS

Drain-to-Source

VN2110 100

VI

D

= 1mA, VGS = 0V

Breakdown Voltage VN2106 60

V

GS(th)

Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 1mA

∆V

GS(th)

Change in V

GS(th)

with Temperature -3.8 -5.5 mV/°CV

GS

= VDS, ID = 1mA

I

GSS

Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V

I

DSS

Zero Gate Voltage Drain Current 1 µAV

GS

= 0V, VDS = Max Rating

100 µAV

GS

= 0V, VDS = 0.8 Max Rating

T

A

= 125°C

I

D(ON)

ON-State Drain Current 0.6 A VGS = 10V, VDS = 25V

R

DS(ON)

Static Drain-to-Source 4.5 6.0 Ω VGS = 5V, ID = 75mA
ON-State Resistance 3.0 4.0 Ω V

GS

= 10V, ID = 500mA

∆R

DS(ON)

Change in R

DS(ON)

with Temperature 0.70 1.0 %/°CV

GS

= 10V, ID = 500mA

G

FS

Forward Transconductance 150 400 m VDS = 25V, ID =0.5A

C

ISS

Input Capacitance 35 50

C

OSS

Common Source Output Capacitance 13 25 pF V

GS

= 0V, VDS = 25V, f = 1MHz

C

RSS

Reverse Transfer Capacitance 4 5

t

d(ON)

Turn-ON Delay Time 3 5

t

r

Rise Time 5 8

t

d(OFF)

Turn-OFF Delay Time 6 9

t

f

Fall Time 5 8

V

SD

Diode Forward Voltage Drop 1.2 1.8 V ISD = 0.6A, VGS = 0V

t

rr

Reverse Recovery Time 400 ns ISD = 0.6A, VGS = 0V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

R

gen

0V

0V

VN2106/VN2110

Switching Waveforms and Test Circuit

Electrical Characteristics (@ 25°C unless otherwise specified)

Thermal Characteristics

VDD = 25V

ns I

D

= 0.6A

R

GEN

= 25Ω

Ω

3

Typical Performance Curves

Output Characteristics

2.0

1.6

1.2

0.8

0.4

0

V

DS

(volts) V

DS

(volts)

I

D

(amperes)

I

D

(amperes)

Saturation Characteristics

Maximum Rated Safe Operating Area

0.1 100101

V

DS

(volts)

I

(amperes)

D

Thermal Response Characteristics

Thermal Resistance (normalized)

1.0

0.8

0.6

0.4

0.2

0

0.001 100.01 0.1 1.0

t

p

(seconds)

Transconductance vs. Drain Current

0.5

0.4

0.3

0.2

0.1

0

0 0.40.2

G

FS

(siemens)

ID (amperes)

Power Dissipation vs. Case Temperature

0 15010050

2.0

1.0

0

1257525

T

C

(°C)

P

D

(watts)

TO-92
P

D

= 1W

T

C

= 25°C

TO-92

TA = -55°C

V

DS

= 25V

0102030 5040

4V
3V

0246 108

25°C

125°C

V

GS

=

7V

9V

0.6 1.00.8

10V

8V

6V

5V

2.0

1.6

1.2

0.8

0.4

0

4V
3V

7V

9V

10V

8V

6V
5V

V

GS

=

TO-92 (DC)

TA = 25°C

TO-92 (pulsed)

TO-236AB

10

1.0

0.1

0.01

SOT-23 (pulsed)

SOT-23 (DC)

TO-236AB
P

D

= 0.36W

T

A

= 25°C

VN2106/VN2110

4

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: [phone] • FAX: [phone]

www.supertex.com

11/12/01

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

Typical Performance Curves

Gate Drive Dynamic Characteristics

Q

G

(nanocoulombs)

V

GS

(volts)

Tj (°C)

V

GS(th)

(normalized)

R

DS(ON)

(normalized)

V

GS(th)

and R

DS(ON)

Variation with Temperature

On-Resistance vs. Drain Current

R

DS(ON)

(ohms)

BV

DSS

(normalized)

Tj (°C)

Transfer Characteristics

V

GS

(volts)

I

D

(amperes)

Capacitance vs. Drain-to-Source Voltage

50

C (picofarads)

VDS (volts)

I

D

(amperes)

BV

DSS

Variation with Temperature

010203040

25

0

0246810

2.0

1.6

1.2

0.8

0.4

0

-50 0 50 100 150

1.1

1.0

10

8

6

4

2

0

1.4

1.2

1.0

0.8

0.6

10

8

6

4

2

0 0.2 0.4

0.6

0.8 1.0

-50 0 50 100 150

30 pF

V

DS

= 40V

V

DS

= 10V

VGS = 5V

VGS = 10V

T

A

= -55°C

VDS = 25V

125°C

0 0.5 1.0 1.5 2.52.0

f = 1MHz

C

ISS

C

OSS

C

RSS

0.9

90 pF

2.0

1.6

1.2

0.8

0.4

0

V

GS(th)

@ 1mA

25°C

0

R

DS(ON)

@ 10V, 0.5A

VN2106/VN2110