
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
US2AA THRU US2MA
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 2.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
o
260
C/10sec/at terminal
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
MAX. .110
MIN. .100(2.54).157(3.99).052(1.32).006(0.152
MAX. .208
MIN. .194(4.93).078(1.98).004(0.102).030(0.76
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
CA
D
F
G
ABCD
2.79).177(4.50).058(1.47).012(0.305
EFGH
5.28).090(2.29).008(0.203).060(1.52
H
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
=90oC)
L
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Maximum Reverse Recovery Time (Note 1) trr nS
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
2.Measured at 1.0 MHz and applied voltage of 4.0V
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
T
=25oC
=100oC
T
=0.5A, IR=1.0A,Irr=0.25A.
F
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
C
J
R
(ja)
θ
T
STG,TJ
US2AAUS2BAUS2DAUS2GAUS2JAUS2KAUS2
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
2.0
50
1.0 1.4 1.7
5.0
350
50 75
25
20
-50 to +150
dc
http://www.sse-diode.com
MA
UNITS
A
A
V
µA
µA
pF
o
C/W
o
C