Datasheet UPD16873MC-6A4, UPD16873CMC-6A4, UPD16873BMC-6A4, UPD16873AMC-6A4 Datasheet (NEC)

DATA SHEET

MOS Integrated Circuit

µµµµ

PD16873/A/B/C

MONOLITHIC 3-ASPECT SPINDLE MOTOR DRIVER

DESCRIPTION

PD16873/A/B/C is 3 aspect spindle motor driver that composed by CMOS control circuit and MOS bridge output.

µ

The consumption electric power can be substantially reduced to the screwdriver which used a conventional

Bipolar transistor by the adoption of 3 aspect all-wave PWM methods and making an output paragraph MOSFET.

FEATURES

• Low On resistance. (The summation of the on resistance of the upper and lower MOSFET) RON = 0.6 Ω (TYP.)

• Low consumption power for 3 aspects all-wave PWM drive method.

• Index pulse (FG pulse) output function built in.

• By the PWM-drive form and the IND pulse pattern, 4 kind, line-up

PWM method Pattern of IND pulse (at 12 pole motor)

µ

PD16873 normal 3 phase composition output (18 pul ses/turn)

µ

PD16873A normal 1 phase output (6 pulses/turn)

µ

PD16873B synchronous 1 phase output (6 pulses/turn)

µ

PD16873C synchronous 3 phase composition output (18 pulses/turn)

• Built in STANDBY terminal and off the inner circuit at the time of the standby.

• Built in START/STOP terminal. Operating short brake works, when ST/SP terminal is off state.

• Supply voltage: 5 V drive

• Low consumption current: IDD = 3 mA (MAX.)

• Thermal shut down circuit (TSD) built in.

• Over current protection circuit built in. (Setting by outside resistance)

• Low voltage malfunction prevention circuit built in.

• Reverse turn prevention circuit built in.

• Hall bias switch built in. (synchronized STB signal.)

• Loading into 30-pin plastic TSSOP (300 mil).

ORDERING INFORMATION

Part number Function Package

µ

PD16873MC-6A4 normal-PWM/3 phase IND

µ

PD16873AMC-6A4 normal-PWM/1 phase IND

µ

PD16873BMC-6A4 synchronous-PWM/1 phase IND

µ

PD16873CMC-6A4 synchronous-PWM/3 phase IND

30-pin plastic TSSOP (7.62 mm (300))

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. S13870EJ1V0DS00 (1st edition)
Date Published February 2000 N CP(K)
Printed in Japan

©

2000

µµµµ

PD16873/A/B/C

ABSOLUTE MAXIMUM RATINGS (TA = 25

C)

°°°°

When mounted on a glass epoxy board (10 cm

Parameter Symbol Condition Rating Unit

DD

V

M

V

OUT

D(DC)

I

D(pulse)

I

DR(pulse)

I

CH(MAX)

stg

IN

T

Input voltage V
Output pin voltage V
Output current (DC)
Output current (pulse)
Output current (pulse, reverse brake)

Note 1

Note 2

Note 3

Power consumption P
Peak junction temperature T
Storage temperature range T

Notes 1.

DC
PW < 5 ms, Duty < 30 % (start-up, locking)

2.

PW < 5 ms, Duty < 30 % (reverse brake)

3.

10cm

××××

1mm, 15% copper foil)

××××

control block
output block

DC
PW < 5 ms, Duty < 30 %
PW < 5 ms, Duty < 30 %

0.5 to +5.7 VSupply voltage

−

0.5 to +5.7 V

−

DD

0.5 to V

−

−

+ 0.5 V

0.5 to +6.7 V

0.5 A/phase

±

1.3 A/phase

±

1.9 A/phase

±

1.0 W

150

55 to 150

−

C

°

C

°

RECOMMENDED OPERATING CONDITIONS
When mounted on a glass epoxy board (10 cm

Parameter Symbol Condition MIN. TYP. MAX. Unit

DD

V

M

V

D(DC)

I

D(pulse)

I

DR(pulse)

I

HB

FG

IN

A

Input voltage V
Output current (DC)
Output current (pulse)
Output current (pulse, reverse brake)

Note 1

Note 2

Note 3

Hall bias current I
IND terminal output current I
Operating temperature T

Notes 1.

DC
PW < 5 ms, Duty < 30 % (start-up, locking)

2.

PW < 5ms, Duty < 30 % (reverse brake)

3.

10cm

××××

1mm, 15% copper foil)

××××

control block 4.5 5.0 5.5 VSupply voltage
output block 4.5 5.0 5.5 V

0VDDV
DC 0.4 A/phase
PW < 5 ms, Duty < 30 % 1.0 A/phase
PW < 5 ms, Duty < 30 % 1.5 A/phase

10 20 mA

2.5

±

20 75

−

5.0 mA

±

C

°

2

Data Sheet S13870EJ1V0DS00

µµµµ

PD16873/A/B/C

CHARACTERISTICS (Unless otherwise specified, TA = 25

C, VDD = VM = 5 V)

°°°°

Parameter Symbol Condition MIN. TYP. MAX Unit
<all>
VDD pin current (operating) I
VDD pin current (standby) I

DD

DD(ST)

STB = V
STB = GND 1.0

DD

1.5 3.0 mA

<ST/SP, STB pin>
High level input voltage V
Low level input voltage V
Input pull-down resistance R

IH

IL

IND

1.8 V

110 k

DD

0.8 V

<Oscillation circuit part>
Triangle wave oscillation

f

PWM

CT = 330pF 75 kHz

frequency
<Hall amplifier part>
Same aspect input range V
Hysteresis V
Input bias voltage I

Hch

Hhys

Hbias

1.5 4.0 V

VH = 2.5 V 15 50 mV

1.0
<Hall bias part>
Hall bias voltage V

HB

IHB = 10 mA 0.3 0.5 V
<IND signal output part>
IND terminal high level votlage V
IND terminal low level voltage V

FG_H

FG_L

IFG = −2.5 mA 3.5 V

IFG = +2.5 mA 0.5 V
<Output part>
Output on resistance

(upper + lower MOSFET)
Off state leakage I
Output turn-on time t
Output turn-off time t

ON

R

D(OFF)

ONH

OFFH

ID = 200 mA

A

C < T

−20°

−20°

RM = 5

< 75°C

A

C < T

< 75°C10

Ω

star connection

0.6 0.9

1.0

1.0
<Torque order part>
Control standard input votlage

ECR 0.3 4.0 V

range
Control input voltage range EC 0.3 4.0 V
Input current I
Input voltage differenc e ECR-EC Duty = 100%, ECR = 2 V

IN

EC, ECR = 0.5 to 3.0 V 70

0.75 V

exclusing dead zone
Dead zone (+) EC_d+ ECR = 2 V 0 65 100 mV
Dead zone (−)EC_d

−

ECR = 2 V 0

65

−

100 mV

−

<Over current detection part>
Input offset volt age V
CL terminal voltage V

IO

CL

15 15 mV

−

90 100 110 mV

A

µ

V

Ω

A

µ

Ω

A

µ

s

µ

s

µ

A

µ

Thermal shut down circuit (TSD) works in T

CH

> 150°C.

Low voltage malfunction prevention circuit (UVLO) works in 4 V (TYP.).

Data Sheet S13870EJ1V0DS00

3

PIN CONNECTION

µµµµ

PD16873/A/B/C

IND

STB

V
V

OUT2

RF
RF

OUT1

V
V

OUT0

RF
RF

SEN

I

CL

1
2
3

M
M

4
5
6
7
8
9

M

10

M

11
12
13
14
15

30
29
28
27
26
25
24
23
22
21
20
19
18
17
16

EC
ECR
V

DD

CT
H2+
H2−
H1+
H1−
H0+
H0−
HB
GND
GND
ST/SP
NC

Pin No. Pin name Terminal function

1 IND Index signal output t erm i nal
2 STB Standby mode input t erm i nal
3V
4V

M

M

Supply voltage input term i nal for motor part

Supply voltage input term i nal for motor part
5 OUT2 Motor connection terminal (W-phase)
6 RF 3 pahse bridge common terminal
7 RF 3 phase bridge common terminal
8 OUT1 Motor connection terminal (V-phase)
9V

10 V

M

M

Supply voltage input term i nal for motor part

Supply voltage input term i nal for motor part

11 OUT0 Motor connection terminal (U-phase)
12 RF 3 phase bridge common termi nal
13 RF 3 phase bridge common termi nal
14 I
15 C

SENSE

L

Sense resistance connection terminal

Over current detection vol tage filter terminal

16 NC No connection
17 ST/SP Start/Stop input t erm i nal
18 GND Ground terminal
19 GND Ground terminal
20 HB Hall bi as terminal
21 H0

−

Hall signal input terminal (U-phase)

22 H0+ Hall s i gnal i nput terminal (U-phase)
23 H1

−

Hall signal input terminal (V-phase)

24 H1+ Hall s i gnal i nput terminal (V-phase)
25 H2

−

Hall signal input terminal (W-phase)

26 H2+ Hall s i gnal i nput terminal (W-phase)
27 C
28 V

T

DD

Oscillation frequency sett i ng condenser connection terminal

Supply voltage input term i nal for control part

29 ECR Control standard v ol tage input terminal
30 EC Control voltage input terminal

Caution Plural terminal (VM, RF, GND) is not only 1 terminal and connect all terminals.

4

Data Sheet S13870EJ1V0DS00

BLOCK DIAGRAM

µµµµ

PD16873/A/B/C

1IND

2STB

3V

M

4V

M

Q5

5OUT2

Q6

6RF

7RF

Q3

8OUT1

Q4

9V

M

Phase
exciting
pulse
generation
circuit

UVLO

T. S. D

CMP2

CMP1

OSC

+

−

+

−

+

30

29

28

27

26

25

24

23

22

EC

ECR

DD

V

CT

H2+

H2−

H1+

H1−

H0+

SEN

10V

M

Q1

11OUT0

Q2

12RF

13RF

Reverse

14I

15CL

+

−

100 mV

turn
detection
circuit

CMP0

−

Caution Plural terminal (VM, RF, GND) is not only 1 terminal and connect all terminals.

21

20

19

18

17

16

H0−

HB

GND

GND

ST/SP

NC

Data Sheet S13870EJ1V0DS00

5

µµµµ

PD16873/A/B/C

TYPICAL CHARACTERISTICS (TA = 25

PT vs. TA characteristics

1.0

(W)

T

0.5

Power dissipation P

0

−20 0 20 40 60
Ambient temperature T

VIH, VIL vs. VDD characteristics (ST/SP, STB)

1.5

1.4

(V)

(V)

IH

IL

1.3

VIH, VIL

125°C/W

A

(°C)

T

C)

°°°°

A

= 25°C

I

DD

, I

2.0

µ

( A)

(mA)

DD

DD (ST)

1.0

pin current (operating) I

pin current (standby) I

DD

DD

V

V

I

0

4.5 5.0 5.580
Control block supply voltage V

f

PWM

100

90

(kHz)

80

PWM

DD (ST)

vs. VDD characteristics

I

DD

DD (ST)

vs. VDD characteristics

TA = 25°C

DD

(V)

TA = 25°C
CT = 330 pF

1.2

70

level input voltage V

OW

High level input voltage V

L

1.1

1.0

4.5 5.0
Control block supply voltage V

f

PWM

vs. TA characteristics

100

90

DD

(V)

DD

= 5 V

V
CT = 330 pF

5.5

60

PWM frequency f

50

5.0

(V)

Hch

4.0

(kHz)

80

PWM

70

PWM frequency f

60

3.0

2.0

1.0

Hall amp. same aspect input range V

50

−20 20 40 60080

A

Ambient temperature T

(°C)

4.5 5.0 5.5

DD

Control block supply voltage V

V

Hch

vs. VDD characteristics

(+)

(V)

A

= 25°C

T

(−)

(+)

0

4.5 5.0 5.5
Control block supply voltage V

(−)

DD

(V)

6

Data Sheet S13870EJ1V0DS00

µµµµ

PD16873/A/B/C

RON, vs. VM characteristics

1.0

0.8

0.6

0.4

Output on resistance RON (Ω)

0.2

0

4.5 5.0
Control block supply voltage V

(ECR-EC) vs. V

1.0

0.9

0.8

T

A = 25°C

M (V)

DD characteristics

TA = 25°C
Duty = 100%

5.5

1.0

0.8

0.6

0.4

Output on resistance RON (Ω)

0.2

0

100

80

60

R

−20 20 40 600
Ambient temperature T

EC_d+/EC_d− vs. V

EC_d−

ON, vs. TA characteristics

A (°C)

DD characteristics

EC_d+

V

M = 5 V

TA = 25°C

80

0.7

0.6

Input voltage difference ECR-EC (V)

0.5

4.5 5.0 5.5
Control block supply voltage V

t

ONH, tOFFH vs. VM characteristics

1.0

µ

µ

OFFH ( s)

tONH

0.5

Output turn−on time tONH ( s)

Output turn−off time t

0

4.5 5.0 5.5

tOFFH

Control block supply voltage V

DD (V)

A = 25°C

T
VDD = 5 V

DD (V)

40

20

Dead zone EC_d+/EC_d− (mV)

0

4.5 5.0 5.5
Control block supply voltage V

DD (V)

Data Sheet S13870EJ1V0DS00

7

µµµµ

PD16873/A/B/C

FUNCTION OPERATION TABLE

(1) ST/SP (start/stop) function

ON/OFF of the movement can be set up under the condition which makes oscillation circuit work. Setting is done
with ST/SP terminal.
When ST/SP terminal is high level, it becomes active (operating) condition. And, when ST/SP terminal is low
level, it becomes stop condition. It becomes short brake condition under the stop condition.

ST/SP = “H”

••••

Input signal (Hall amplif i er out put)

CMP 0 CMP 1 CMP 2 PWM

HHLH ON
HHL L OFF
HLLH ON
HLLL OFF
HLHH ON
HLHL OFF

LLHH ON
LLHL OFF
LHHH ON
LHHL OFF
LHLH ON
LHLL OFF

Operation mode exciti ng phase

W → V

W → U

V → U

V → W

U → W

U → V

In addition, the movement in OFF varies in the product.
Loop is composed through parasitic diode of the high-side MOSFET. (µPD16873/µPD16873A)
Loop is composed through channel of the high-side MOSFET. (µPD16873B/µPD16873C)

ST/SP = “L”

••••

Input signal (Hall amplif i er out put)

CMP 0 CMP 1 CMP 2 PWM

−−−−

Operation mode

Stop (short brake)

It becomes short brake condition. (High side switch is “ON” and low side switch is “OFF”)

8

Data Sheet S13870EJ1V0DS00

µµµµ

PD16873/A/B/C

(2) Torque order

The relation between difference (ECR-EC) in control standard voltage (ECR) and control voltage (EC) and the
torque is as follows.

Duty cycle

Forward torque

100%

65 mVtyp

0.75 Vtyp

0.75 Vtyp

65 mVtyp

100%

Reverse torque

→ ECR-EC

(+)(−)

Input voltage difference (ECR-EC) and output PWM duty becomes related to the proportion.
In addition, it becomes reverse brake when input voltage is ECR < EC. It stops after the reverse rotation of the
motor is detected under reverse braking mode. If input voltage difference is zero (ECR = EC), it becomes short
brake mode.

Input voltage differenc e Output mode
ECR > EC Forward turn
ECR = EC Stop (short brake)
ECR < EC

After detecting reverse, it stops.

Note

Reverse turn

Note

(3) Standby mode

By the setting of standby mode, the power supply inside

PD16873 can be made off.

µ

Each output terminal at the time of standby mode becomes high impedance. Also, the oscillation block inside,
too, stops and it is possible for the circuit current to reduce.

STB terminal Operation mode
“H” level Regular mode
“L” level Standby mode

Data Sheet S13870EJ1V0DS00

9

TIMING CHART

(1) Hall signal input

(2) CMP signal

µµµµ

PD16873/A/B/C

H

0

H

1

H

2

CMP0

CMP1

CMP2

IND

(873A/873B)

IND

(873/873C)

(3) Output MOSFET drive and comparator choice

Q1 (SW) (SW) ON ON (SW) (SW) ON ON
Q2 SW SW SW SW
Q3 (SW) ON ON (SW) (SW) ON ON (SW) (SW)
Q4 SW SW SW SW SW
Q5 ON ON (SW) (SW) ON ON (SW) (SW) ON
Q6 SW SW SW SW

Remark

10

PD16873/A are not synchronous switching. (Normal type PWM)

µ

PD16873B/C are synchronous switching of high-side MOSFET. (Synchronous type PWM)

µ

Data Sheet S13870EJ1V0DS00

(4) Output terminal voltage wave

µµµµ

PD16873/A/B/C

OUT0

OUT1

OUT2 PWM

PWM PWM

PWMPWM

PWM

Caution

(1) About output current

The rated ouptut current differs depending on whether the motor revolves at a constant speed (steady state), is
started (steady state), or Reverse brake is applied. The rated DC current when the motor revolves at a constant
speed is 0.5 A, and the rated instantaneous current when the is started is 1.3 A. When the motor is stopped by
using Reverse brake, the maximum current is 1.9 A.
When use Reverse brake, a current exceeding that when the motor revolves at a constant speed (immediately
before a brake is applied) instantaneously flows because of the counter electromotive force due to the motor
inductance. Determine the value of over current for steady state, taking the peak current for using Reverse
brake to the motor into consideration.

(2) About output pin voltage

Output terminal (OUT0, OUT1, OUT2) takes the voltage which exceeds a motor power supply during following
counter current.
Maximum rate of output pin voltage is 6.7 V. Be careful that an output terminal doesn’t take a voltage over 6.7 V.

V

ON

OUTA

OFF

M

I

D

OFF

OUTB

R

ON(N)

PWM-ON

V

OUTB

= IDR (R

OUTB

+ RS)

ON

OUTA

OFF

RF

I

SEN

R

S

I

RF

SEN

R

V

M

I

D

Q1

PWM ON: PD16873B/C

V

OL

µ

OFF: PD16873/A

µ

OUTB

V

R

OUTB

ON(N)

PWM-ON

S

= VM + V

OL

Lower Nch MOC: PWM-ON time

Lower Nch MOC: PWM-OFF time

Data Sheet S13870EJ1V0DS00

11

APPLICATION CIRCUIT EXAMPLE

200 Ω

controoller

controoller

ECR

29

DD

V

CT

28

27

EC

30

µµµµ

PD16873/A/B/C

5 V ± 10%

HU

HV

HW

200 Ω

H2+

H2−

H1+

H1−

H0+

H0−

HB

GND

GND

ST/SP CPU

NC

26

25

24

23

22

21

20

19

18

17

16

1

IND

controller

2

STB

CPU

3

M

V

OSC 330 pF

UVLO

4

VM

T. S. D

Q5

5

OUT2

MOTOR

+

Phase

exciting

Q6

−

6

pulse

genration

RF

+

circuit

7

RF

−

Q3

Q4

8

OUT1

MOTOR

+

−

Reverse

turn

detection

circuit

+

−

Q1

Q2

9

10

11

12

13

14

M

V

VM

RF

RF

SEN

I

100 mV

15

CL

OUT0

1.8 kΩ

330 pF

RFIL

CFIL

MOTOR

S RFIL

100 mV/RS

R

RS

Caution If hall elements connected series, please change hall bias resistances, and hall signal include

into same aspect input range of hall amplifier.

12

Data Sheet S13870EJ1V0DS00

PACKAGE DIMENSION

30-PIN PLASTIC TSSOP (7.62mm(300))

µµµµ

PD16873/A/B/C

30 16

detail of lead end

F

G

P

115

E

A

A'

S

C

D

M

M

B

K

T

L
U

H

I

S

N

J

NOTE

Each lead centerline is located within 0.10 mm of
its true position (T.P.) at maximum material condition.

ITEM MILLIMETERS

A 9.85±0.10
A' 9.7±0.1
B

0.375

C

0.65 (T.P.)

D

0.24±0.05

0.1±0.05

E

1.2 MAX.F

G

1.0±0.05

H 8.1±0.1

I

6.1±0.1
J 1.0±0.1
K 0.145±0.025

L

0.5

0.10

M

0.10N
P3°

+5°

−3°

0.25T

0.6±0.15U

S30MC-65-6A4

Data Sheet S13870EJ1V0DS00

13

RECOMMENDED SOLDERING CONDITIONS

Solder this product under the following recommended conditions.
For soldering methods and conditions other than those recommended, consult NEC.

µµµµ

PD16873/A/B/C

For details of the recommended soldering conditions, refer to information document

Mounting Technology Manual

Soldering Method Soldering Condi tions

Infrared reflow Pac kage peak temperature: 235°C; Time: 30 secs. max. (210°C m i n.);

Number of times: 3 tim es max.; Number of day: none; Fl ux:
Rosin-based flux with li t tle chlorine content (chlori ne: 0.2 Wt% max.) is
recommended.

VPS Package peak temperature: 215°C; Ti m e: 40 secs. max.; (200°C min.)

Number of times: 3 tim es max.; Number of day: none; Fl ux:
Rosin-based flux with li t tle chlorine content (chlori ne: 0.2 Wt% max.) is
recommended.

Wave Soldering Package peak temperature: 260°C; Time: 10 secs. m ax.;

Preheating temperature: 120°C max .; Number of times: onc e;
Flux: Rosin-based flux wi th little chlorine cont ent (chlorine: 0.2 Wt% max.)
is recommended.

”.

Caution Do not use two or more soldering methods in combination.

“Semiconductor Device

Recommended Condition
Symbol

IR35-00-3

VP15-00-3

WS60-00-1

14

Data Sheet S13870EJ1V0DS00

µµµµ

PD16873/A/B/C

NOTES FOR CMOS DEVICES

1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Note:
Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred. Environmental control
must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using
insulators that easily build static electricity. Semiconductor devices must be stored and transported
in an anti-static container, static shielding bag or conductive material. All test and measurement
tools including work bench and floor should be grounded. The operator should be grounded using
wrist strap. Semiconductor devices must not be touched with bare hands. Similar precautions need
to be taken for PW boards with semiconductor devices on it.

2 HANDLING OF UNUSED INPUT PINS FOR CMOS

Note:
No connection for CMOS device inputs can be cause of malfunction. If no connection is provided
to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence
causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels
of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused

DD

pin should be connected to V
being an output pin. All handling related to the unused pins must be judged device by device and
related specifications governing the devices.

or GND with a resistor, if it is considered to have a possibility of

3 STATUS BEFORE INITIALIZATION OF MOS DEVICES

Note:
Power-on does not necessarily define initial status of MOS device. Production process of MOS
does not define the initial operation status of the device. Immediately after the power source is
turned ON, the devices with reset function have not yet been initialized. Hence, power-on does
not guarantee out-pin levels, I/O settings or contents of registers. Device is not initialized until the
reset signal is received. Reset operation must be executed immediately after power-on for devices
having reset function.

Data Sheet S13870EJ1V0DS00

15

µµµµ

PD16873/A/B/C

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.

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