Datasheet UPC8179TB-E3, UPC8179TB Datasheet (NEC)

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUIT

PC8179TB

µµµµ

SILICON MMIC LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

DESCRIPTION

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 wideband matched IC. This low current amplifier operates on 3.0 V.

This IC is manufactured using NEC’s 30 GHz f process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

max

UHS0 (Ultra High Speed Process) silicon bipolar process. This

Ω

FEATURES

• Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V

• Supply voltage : VCC = 2.4 to 3.3 V

• High efficiency : P

• Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz

• Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz

• Operating frequency : 0.1 to 2.4 GHz (Output port LC matching)

• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

• Light weight : 7 mg (Standard value)

APPLICATION

• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system

O (1 dB)

= +3.0 dBm TYP. @ f = 1.0 GHz

O (1 dB)

P

= +1.5 dBm TYP. @ f = 1.9 GHz

O (1 dB)

P

= +1.0 dBm TYP. @ f = 2.4 GHz

GP = 15.5 dB TYP. @ f = 1.9 GHz GP = 15.5 dB TYP. @ f = 2.4 GHz

ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.4 GHz

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14730EJ2V0DS00 (2nd edition) Date Published August 2000 N CP(K) Printed in Japan

Caution Electro-static sensitive devices

2000©

ORDERING INFORMATION

Part Number Package Marking Supplying Form

PC8179TB-E3 6-pin super minimold C3C Embossed tape 8 mm wide.

µ

1, 2, 3 pins face the perforat i on side of the tape. Qty 3 kpcs/reel.

µµµµ

PC8179TB

Remark

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

PIN CONNECTIONS

(Top View)

3

2

1

C3C

PC8179TB)

µ

(Bottom View)

4

5

6

4

5

6

3

2

1

Pin No. Pin Name

1 INPUT 2GND 3GND 4OUTPUT 5GND 6V

CC

2

Data Sheet P14730EJ2V0DS00

µµµµ

PC8179TB

PRODUCT LINE-UP (TA = +25 °C, VCC = V

Parameter

Part No.

PC8178TB 1.9 11 39

µ

PC8179TB 4.0 13.5 44 +3.0

µ

PC8128TB 2.8 12.5 39

µ

PC8151TB 4.2 12.5 38 +2.5 15 36 +1.5 15 34 +0.5

µ

PC8152TB 5.6 23 40

µ

Remark

(mA)

Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.

1.0 GHz output port matching frequency

G

CC

I

(dB)

P

ISL

(dB)

O(1 dB)

P (dBm)

4.0

−

4.0 13 39

−

4.5 19.5 38

−

out

= 3.0 V, ZS = ZL = 50

1.66 GHz output port matching frequency

P

G

ISL

(dB)

−−−

O(1 dB)

P (dBm)

4.0 13 37

−

8.5 17.5 35

−

)

ΩΩΩΩ

1.9 GHz output port matching frequency

P

G

ISL

(dB)

11.5 40

15.5 42 +1.5 15.5 41 +1.0 C3C

SYSTEM APPLICATION EXAMPLE

Location examples in digital cellular

Low Noise Tr.

RX

2.4 GHz output port matching frequency

O(1 dB)

P (dBm)

7.0 11.5 38

−

4.0

−

8.5

−

P

G

(dB)

−−−

DEMOD.

ISL

(dB)

O(1 dB)

P (dBm)

7.5 C3B

−

I

Q

Marking

C2P C2U C2V

SW

TX

PA

÷N PLL

PLL

I

0°

φ

90°

Q

These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation.

Data Sheet P14730EJ2V0DS00

3

PIN EXPLANATION

µµµµ

PC8179TB

Pin No.

Pin Name

1 INPUT

GND 0

2 3 5

4 OUTPUT voltage

Applied Voltage (V)

as same as V through external inductor

Pin Voltage

Note

(V)

−

CC

1.09

−

Function and Applications Internal Equivalent Circ ui t

Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connection over a wide band. This pin must be coupled to signal source with capacitor for DC c ut.

Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be c onnected together with wide ground pattern to decrease impedance defference.

Signal output pin. This pin i s designed as collector output. Due to the high impedance output, this pin should be externall y equipped with LC matching circuit to next s tage. For L, a size 1005 chip inductor c an be chosen.

↓

3

1

6

4

2

5

6VCC2.4 to 3.3

Pin voltage is measured at V

Note

−

CC

Power supply pin. This pin should be externally equipped with bypass capacit or to minimize its im pedanc e.

= 3.0 V.

4

Data Sheet P14730EJ2V0DS00

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Conditions Ratings Unit

µµµµ

PC8179TB

Supply Voltage V Circuit Current I Power Dissipation P

CC

TA = +25 °C, Pin 4, Pin 6 3.6 V TA = +25 °C 15 mA

D

Mounted on double sided copper clad 50 × 50 × 1.6

mm epoxy glass PWB (T Operating Ambient Temperature T Storage Temperature T Input Power P

A

stg

in

TA = +25 °C +5 dBm

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol MIN. TYP. MAX. Unit Remarks

Supply Voltage V

Operating Ambient Temperature T

CC

A

2.4 3.0 3.3 V The same voltage should be applied

40 +25 +85 °C

−

ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T

Parameter Symbol Conditions MIN. TYP. MAX. Unit

A

= +25 °C, VCC = V

A

= +85 °C)

out

= 3.0 V, ZS = ZL = 50

270 mW

40 to +85 °C

−

55 to +150 °C

−

to pin 4 and pin 6.

, at LC matched frequency)

ΩΩΩΩ

Circuit Current I Power Gain G

CC

No signal 2.9 4.0 5.4 mA

P

f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, P f = 2.4 GHz, P

in

= −30 dBm

in

= −30 dBm

Isolation ISL f = 1.0 GHz, Pin = −30 dBm

in

= −30 dBm

in

= −30 dBm

1 dB Gain Compression Output Power

P

o(1dB)

f = 1.9 GHz, P f = 2.4 GHz, P

f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz

Noise Figure NF f = 1.0 GHz

f = 1.9 GHz f = 2.4 GHz

Input Return Loss (Without matching circ ui t)

RL

in

f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, P f = 2.4 GHz, P

in

= −30 dBm

in

= −30 dBm

11.0

13.0

13.0 39

37 36

0.5

−

2.0

−

3.0

−

4 4 6

13.5

15.5

15.5 44

42 41

+3.0 +1.5 +1.0

5.0

5.0 7

7 9

15.5

17.5

−

6.5

−

dB

dBm

dB

Data Sheet P14730EJ2V0DS00

5

TEST CIRCUITS

<1> f = 1.0 GHz

<2> f = 1.9 GHz

V

CC

C

3

Output port matching circuit

1

6

50 Ω

IN OUT

C

1

L

C

4

50 Ω

2

2, 3, 5

V

CC

µµµµ

PC8179TB

<3> f = 2.4 GHz

C

4

C

5

C

6

Output port matching circuit

L

6

50 Ω

IN OUT

1

C

1

C

4

50 Ω

2

C

3

2, 3, 5

V

CC

C

3

C

4

C

5

Output port matching circuit

L

6

50 Ω

IN OUT

C

1

4

1

50 Ω

C

L

2

2, 3, 5

6

Data Sheet P14730EJ2V0DS00

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

<1> f = 1.0 GHz

AMP-4

Top View

OUT

C3C

Connector

L

C

2

IN

C

1

µµµµ

PC8179TB

Connector

Mounting direction

COMPONENT LIST

1.0 GHz Output Port Matc hi ng

1

C

2

C

3

C

1

L

1 000 pF

0.75 pF 10 pF

12 nH

C

3

Data Sheet P14730EJ2V0DS00

7

<2> f = 1.9 GHz

Top View

C3C

Mounting direction

Connector

µµµµ

PC8179TB

AMP-4

L

C

2

C

IN

C

1

C

4

C

5

1

C

3

6

OUT

Connector

COMPONENT LIST

1.9 GHz Output Port Matc hi ng

C1, C3, C5, C

2

C

4

C

1

L

6

1 000 pF

0.75 pF 10 pF

3.3 nH

8

Data Sheet P14730EJ2V0DS00

<3> f = 2.4 GHz

Top View

C3C

Mounting direction

Connector

µµµµ

PC8179TB

AMP-4

L

C

L

IN

C

1

C

2

3

4

2

1

C

5

OUT

Connector

COMPONENT LIST

2.4 GHz Output Port Matc hi ng

C1, C2, C4, C

3

C

1

L

2

L

NOTES

(∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board (∗2) Solder plated on pattern (∗3) Back side: GND pattern (∗4) : Through holes

5

1 000 pF

10 pF

1.8 nH

2.7 nH

Data Sheet P14730EJ2V0DS00

9

µµµµ

PC8179TB

TYPICAL CHARACTERISTICS (unless otherwise specified, TA = +25

CIRCUIT CURRENT vs. SUPPLY VOLTAGE

5

No signals

4

(mA)

CC

3

2

Circuit Current I

1

0

1

Supply Voltage VCC (V)

23

4

OPERATING AMBIENT TEMPERATURE

5

4

(mA)

CC

3

2

Circuit Current I

1

0

–40 –20 0

–60

Operating Ambient Temperature TA (°C)

C)

°°°°

CIRCUIT CURRENT vs.

+40 +60 +80

+20

No signals

V

CC

= 3.0 V

+100

10

Data Sheet P14730EJ2V0DS00

1.0 GHz OUTPUT PORT MATCHING

S-PARAMETER (monitored at connector on board)

TA = +25°C, VCC = V

out

= 3.0 V

S

11

MARKER 1

1 GHz

1: 73.629 Ω

–61.461 Ω 2.5895 pF

1 000.000 000 MHz

1

µµµµ

PC8179TB

START 100.000 000 MHz

S

22

MARKER 1

1 GHz

STOP 3 100.000 000 MHz

1: 50.812 Ω 20.338 Ω 3.2369 nH

1 000.000 000 MHz

1

START 100.000 000 MHz STOP 3 100.000 000 MHz

Data Sheet P14730EJ2V0DS00

11

1.0 GHz OUTPUT PORT MATCHING

µµµµ

PC8179TB

+20

+10

0

(dB)

P

–10

–20

Power Gain G

–30

–40

0.1

–10

–20

–30

–40

V

CC

POWER GAIN vs. FREQUENCY

CC

V

CC

= 3.0 V

CC

= 2.4 V

V

0.3

1.0

Frequency f (GHz)

ISOLATION vs. FREQUENCY

CC

= 3.3 V

= 3.0 V

V

= 3.3 V

3.0

+20

V

CC

= 3.0 V

+10

0

(dB)

P

–10

–20

Power Gain G

–30

–40

0.1

–10

VCC = 3.0 V

–20

–30

–40

POWER GAIN vs. FREQUENCY

A

= –40°C

T

A

= +25°C

T

A

= +85°C

0.3

1.0

Frequency f (GHz)

ISOLATION vs. FREQUENCY

A

= –40°C

T

A

= +25°C

T

3.0

–50

Isolation ISL (dB)

–60

–70

0.1

0.3 Frequency f (GHz)

INPUT RETURN LOSS vs. FREQUENCY

0

–5

(dB)

in

–10

CC

V

–15

–20

–25

Input Return Loss RL

–30

0.1

0.3 Frequency f (GHz)

1.0

V

CC

= 3.0 V

V

1.0

CC

V

= 2.4 V

CC

= 3.3 V

= 2.4 V

3.0

–50

Isolation ISL (dB)

–60

–70

0.1

0.3 Frequency f (GHz)

INPUT RETURN LOSS vs. FREQUENCY

0

–5

(dB)

in

–10

A

= +25°C

T

–15

–20

–25

Input Return Loss RL

–30

0.1

0.3

Frequency f (GHz)

1.0

T

A

= +85°C

TA = –40°C

1.0

TA = +85°C

CC

= 3.0 V

V

3.0

12

Data Sheet P14730EJ2V0DS00

1.0 GHz OUTPUT PORT MATCHING

µµµµ

PC8179TB

OUTPUT RETURN LOSS vs. FREQUENCY

+5

0

(dB)

out

–5

–10

–15

–20

Output Return Loss RL

–25

0.1

V

0.3

CC

= 2.4 V

CC

= 3.0 V

CC

= 3.3 V

Frequency f (GHz)

OUTPUT POWER vs. INPUT POWER

+10

CC

= 3.3 V

V

+5

CC

= 3.0 V

0

(dBm)

–5

out

V

–10 –15

1.0

CC

V

= 2.4 V

3.0

OUTPUT RETURN LOSS vs. FREQUENCY

+5

0

(dB)

out

–5

–10

–15

–20

Output Return Loss RL

–25

0.1

A

= –40°C

T

A

= +25°C

T

A

= +85°C

0.3 Frequency f (GHz)

OUTPUT POWER vs. INPUT POWER

+10

CC

= 3.0 V

V

+5

A

= –40°C

T

0

(dBm)

–5

out

T

A

= +25°C

–10 –15

1.0

CC

V

T

A

= +85°C

= 3.0 V

3.0

–20

Output Power P

–25 –30

–40

–30

–35 –25 –15–20

–10 –5

Input Power Pin (dBm)

3RD ORDER INTERMODULATION DISTORTION,

OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE

+20 +10

(dBm)

0

–10

out(each)

VCC = 3.0 V f

1

= 1 000 MHz

f

2

= 1 001 MHz

(dBm)

3

–20 –30 –40 –50

P

out(each)

IM

3

–60 –70 –80

–40

Output Power of Each Tone P

3rd Order Intermodulation Distortion IM

–30

–35 –25 –15–20 Input Power of Each Tone P

–10 –5

in(each)

0

(dBm)

+5

–20

Output Power P

–25 –30

–40

–35 –25 –15–20

–30

–10 –5

+5

0

Input Power Pin (dBm)

3RD ORDER INTERMODULATION DISTORTION

vs. OUTPUT POWER OF EACH TONE

60

(dBc)

3

50

40

V

CC

= 2.4 V

CC

V

= 3.3 V

1

= 1 000 MHz

f f

2

= 1 001 MHz

CC

= 3.0 V

V

30

20

10

0

0 –20

3rd Order Intermodulation Distortion IM

–15

–10 –5

Output Power of Each Tone P

out(each)

0

(dBm)

+5

Data Sheet P14730EJ2V0DS00

13

1.0 GHz OUTPUT PORT MATCHING

NOISE FIGURE vs. SUPPLY VOLTAGE

6.0 T

5.5

5.0

4.5

4.0

Noise Figure NF (dB)

3.5

A = +85°C

T

A = +25°C

A = –40°C

T

µµµµ

PC8179TB

3.0

2.0

2.5

Supply Voltage VCC (V)

3.0

3.5

14

Data Sheet P14730EJ2V0DS00

1.9 GHz OUTPUT PORT MATCHING

S-PARAMETER (monitored at connector on board)

TA = +25°C, VCC = V

out

= 3.0 V

µµµµ

PC8179TB

11

MARKER 1

1.9 GHz

START 100.000 000 MHz

1: 38.717 ΩS

1

STOP 3 100.000 000 MHz

–48.486 Ω 1.7276 pF

1 900.000 000 MHz

S

22

MARKER 1

1.9 GHz

START 100.000 000 MHz STOP 3 100.000 000 MHz

1: 62.379 Ω –6.1953 Ω 13.521 pF

1 900.000 000 MHz

1

Data Sheet P14730EJ2V0DS00

15

1.9 GHz OUTPUT PORT MATCHING

µµµµ

PC8179TB

+20

+10

0

(dB)

P

–10

–20

Power Gain G

–30

–40

0.1

–10

–20

–30

–40

POWER GAIN vs. FREQUENCY

V

CC

= 3.3 V

V

CC

= 3.0 V

V

CC

0.3

1.0

Frequency f (GHz)

ISOLATION vs. FREQUENCY

VCC = 3.3 V

CC

= 3.0 V

V

= 2.4 V

3.0

+20

VCC = 3.0 V

+10

0

(dB)

P

–10

–20

Power Gain G

–30

–40

0.1

–10

VCC = 3.0 V

–20

–30

–40

POWER GAIN vs. FREQUENCY

A

= –40°C

T

A

= +25°C

T

A

= +85°C

0.3

1.0

Frequency f (GHz)

ISOLATION vs. FREQUENCY

A

= –40°C

T

A

= +25°C

3.0

–50

Isolation ISL (dB)

VCC = 2.4 V

–60

–70

0.1

0.3 Frequency f (GHz)

INPUT RETURN LOSS vs. FREQUENCY

0

CC

= 2.4 V

V

–5

(dB)

in

–10

V

CC

= 3.3 V

–15

–20

–25

Input Return Loss RL

–30

0.1

0.3 Frequency f (GHz)

CC

V

1.0

= 3.0 V

1.0

3.0

–50

Isolation ISL (dB)

A

= +85°C

T

–60

–70

0.1

0.3 Frequency f (GHz)

INPUT RETURN LOSS vs. FREQUENCY

0

–5

(dB)

in

–10

A

= +25°C

T

–15

–20

–25

Input Return Loss RL

CC

= 3.0 V

V

–30

0.1

0.3 Frequency f (GHz)

1.0

T

A

= +85°C

T

A

= –40°C

1.0

3.0

16

Data Sheet P14730EJ2V0DS00

1.9 GHz OUTPUT PORT MATCHING

µµµµ

PC8179TB

OUTPUT RETURN LOSS vs. FREQUENCY

+5

0

(dB)

out

–5

–10

–15

–20

Output Return Loss RL

–25

0.1

0.3

VCC = 3.3 V

CC

= 3.0 V

V

CC

= 2.4 V

Frequency f (GHz)

OUTPUT POWER vs. INPUT POWER

+10

+5

CC

= 3.3 V

0

(dBm)

–5

out

V

VCC = 3.0 V

–10

–15

CC

= 2.4 V

V

–20

Output Power P

–25

–30

–40

–30

–35 –25 –15–20

Input Power Pin (dBm)

1.0

–10 –5

OUTPUT RETURN LOSS vs. FREQUENCY

+5

V

CC

= 3.0 V

0

(dB)

out

–5

–10

A

= +85°C

T

A

= +25°C

T

A

= –40°C

1.0

3.0

–15

–20

Output Return Loss RL

–25

0.1

0.3 Frequency f (GHz)

OUTPUT POWER vs. INPUT POWER

+10

A

= –40°C

T

+5

0

(dBm)

–5

out

T

A

= +25°C

–10

T

A

–15

= +85°C

–20

Output Power P

–25

VCC = 3.0 V

+5

0

–30

–40

–35 –25 –15–20

–30

–10 –5

+5

0

Input Power Pin (dBm)

3RD ORDER INTERMODULATION DISTORTION,

OUTPUT POWER OF EACH TONE

vs. INPUT POWER OF EACH TONE

+20

(dBm)

+10

3

(dBm)

0

–10

out(each)

–20 –30

P

out(each)

IM

3

–40 –50 –60 –70 –80

–40

Output Power of Each Tone P

3rd Order Intermodulation Distortion IM

–30

–35 –25 –15–20 Input Power of Each Tone P

VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz

–10 –5

in(each)

(dBc)

3

0

(dBm)

Data Sheet P14730EJ2V0DS00

3rd Order Intermodulation Distortion IM

3RD ORDER INTERMODULATION DISTORTION

vs. OUTPUT POWER OF EACH TONE

60

f

1

= 1 900 MHz

50

f2 = 1 901 MHz

40

V

CC

= 3.3 V

30

CC

= 2.4 V VCC = 3.0 V

V

20

10

0 –20

–15

–10 –5

Output Power of Each Tone P

out(each)

0

(dBm)

+5

17

1.9 GHz OUTPUT PORT MATCHING

NOISE FIGURE vs. SUPPLY VOLTAGE

5.5 T

A = +85°C

5.0

4.5

T

A = +25°C

4.0

Noise Figure NF (dB)

3.5

A = –40°C

T

µµµµ

PC8179TB

3.0

2.0

2.5

Supply Voltage VCC (V)

3.0

3.5

18

Data Sheet P14730EJ2V0DS00

2.4 GHz OUTPUT PORT MATCHING

S-PARAMETER (monitored at connector on board)

TA = +25°C, VCC = V

out

= 3.0 V

µµµµ

PC8179TB

S

11

MARKER 1

2.4 GHz

START 100.000 000 MHz

1: 31.709 Ω –36.367 Ω 1.8235 pF

2 400.000 000 MHz

1

STOP 3 100.000 000 MHz

S

22

START 100.000 000 MHz STOP 3 100.000 000 MHz

1: 41.473 Ω 8.8828 Ω 589.06 pH

2 400.000 000 MHz

1

Data Sheet P14730EJ2V0DS00

19

2.4 GHz OUTPUT PORT MATCHING

µµµµ

PC8179TB

+20

POWER GAIN vs. FREQUENCY

+10

0

(dB)

P

–10

–20

Power Gain G

–30

–40

0.1

ISOLATION vs. FREQUENCY

–10

–20

–30

–40

–50

Isolation ISL (dB)

–60

–70

0.1

V

CC

= 3.0 V

V

0.3 Frequency f (GHz)

V

CC

= 3.0 V

CC

V

0.3 Frequency f (GHz)

= 3.3 V

V

CC

= 2.4 V

1.0

VCC = 3.3 V

= 2.4 V

1.0

3.0

+20

V

CC

= 3.0 V

+10

POWER GAIN vs. FREQUENCY

0

(dB)

P

–10

–20

Power Gain G

–30

–40

0.1

ISOLATION vs. FREQUENCY

–10

CC

= 3.0 V

V

–20

–30

–40

–50

Isolation ISL (dB)

–60

–70

0.1

T

A

= –40°C

T

A

= +25°C

0.3 Frequency f (GHz)

TA = –40°C

T

A

= +85°C

0.3 Frequency f (GHz)

1.0

A

= +85°C

T

A

= +25°C

T

3.0

0

–5

(dB)

in

–10

–15

–20

–25

Input Return Loss RL

–30

0.1

20

INPUT RETURN LOSS vs. FREQUENCY

CC

= 2.4 V

V

CC

= 3.0 V

V

CC

= 3.3 V

0.3

1.0

Frequency f (GHz)

Data Sheet P14730EJ2V0DS00

3.0

INPUT RETURN LOSS vs. FREQUENCY

0

–5

(dB)

in

–10

T

A

= +25°C

–15

–20

–25

Input Return Loss RL

CC

= 3.0 V

V

–30

0.1

0.3 Frequency f (GHz)

1.0

T

A

= +85°C

T

A

= –40°C

3.0

2.4 GHz OUTPUT PORT MATCHING

µµµµ

PC8179TB

OUTPUT RETURN LOSS vs. FREQUENCY

+5

0

(dB)

out

–5

–10

V

–15

V

–20

Output Return Loss RL

–25

0.1

0.3 Frequency f (GHz)

OUTPUT POWER vs. INPUT POWER

+10

+5

CC

= 3.3 V

V

0

(dBm)

–5

out

CC

V

= 3.0 V

–10 –15

CC

= 2.4 V

V

–20

Output Power P

–25 –30

–40

–30

–35 –25 –15–20

Input Power Pin (dBm)

CC

= 2.4 V

CC

= 3.0 V

CC

= 3.3 V

1.0

–10 –5

OUTPUT RETURN LOSS vs. FREQUENCY

+5

CC

= 3.0 V

V

0

(dB)

out

–5

–10

T

A

= +85°C

3.0

–15

–20

Output Return Loss RL

–25

0.1

0.3

T

A

= +25°C

A

= –40°C

T

1.0

3.0

Frequency f (GHz)

OUTPUT POWER vs. INPUT POWER

+10

CC

= 3.0 V

V

+5

0

(dBm)

–5

out

A

= +25°C

T

–10

A

= –40°C

T

–15 –20

Output Power P

–25

+5

0

–30

–40

T

A

= +85°C

–30

–35 –25 –15–20

–10 –5

+5

0

Input Power Pin (dBm)

3RD ORDER INTERMODULATION DISTORTION,

OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE

+20

(dBm)

+10

3

(dBm)

0

–10

out(each)

P

out(each)

–20 –30 –40

IM

3

–50 –60 –70 –80

–40

Output Power of Each Tone P

3rd Order Intermodulation Distortion IM

–30

–35 –25 –15–20 Input Power of Each Tone P

VCC = 3.0 V f

1

= 2 400 MHz

f

2

= 2 401 MHz –10 –5

in(each)

(dBc)

3

0

(dBm)

Data Sheet P14730EJ2V0DS00

3rd Order Intermodulation Distortion IM

3RD ORDER INTERMODULATION DISTORTION

vs. OUTPUT POWER OF EACH TONE

60

1

= 2 400 MHz

f f

2

50

CC

V

= 2 401 MHz

= 3.3 V

40

CC

= 3.0 V

V

30

20

V

CC

= 2.4 V

10

0 –20

–15

–10 –5

Output Power of Each Tone P

out(each)

0

(dBm)

+5

21

2.4 GHz OUTPUT PORT MATCHING

NOISE FIGURE vs. SUPPLY VOLTAGE

5.5 T

A

= +85°C

5.0

4.5 T

A

= +25°C

4.0

Noise Figure NF (dB)

3.5

A

= –40°C

T

µµµµ

PC8179TB

3.0

Remark

2.0

2.5

Supply Voltage VCC (V)

3.0

The graphs indicate nominal characteristics.

3.5

22

Data Sheet P14730EJ2V0DS00

µµµµ

PC8179TB

S-PARAMETER (VCC = V

S11-FREQUENCY

out

= 3.0 V)

3.0 G

0.1 G

1.0 G

2.0 G

S22-FREQUENCY

0.1 G

1.0 G

2.0 G

3.0 G

Data Sheet P14730EJ2V0DS00

23

µµµµ

PC8179TB

TYPICAL S-PARAMETER VALUES (TA = +25

VCC = V

out

= 3.0 V, ICC = 4.0 mA

FREQUENCY S

MHz MAG.ANG.MAG.ANG.MAG.ANG.MAG.ANG.

100.0000 0.824

200.0000 0.692

300.0000 0.594

400.0000 0.533

500.0000 0.499

600.0000 0.474

700.0000 0.460

800.0000 0.450

900.0000 0.441

1000.0000 0.438

1100.0000 0.431

1200.0000 0.426

1300.0000 0.427

1400.0000 0.417

1500.0000 0.413

1600.0000 0.408

1700.0000 0.398

1800.0000 0.387

1900.0000 0.380

2000.0000 0.366

2100.0000 0.352

2200.0000 0.341

2300.0000 0.330

2400.0000 0.320

2500.0000 0.304

2600.0000 0.296

2700.0000 0.285

2800.0000 0.272

2900.0000 0.267

3000.0000 0.256

3100.0000 0.248

11

17.1 1.181

−

25.9 1.181

−

29.2 1.247

−

30.7 1.370

−

31.1 1.514

−

32.0 1.677

−

32.7 1.885

−

34.0 2.050

−

35.6 2.237

−

37.7 2.460

−

39.8 2.627

−

42.0 2.772 178.4 0.005 27.7 0.903

−

44.8 2.965 173.2 0.005 40.2 0.895

−

48.1 3.123 168.0 0.004 24.4 0.891

−

50.6 3.199 161.8 0.006 45.5 0.884

−

54.6 3.351 156.8 0.005 44.6 0.877

−

57.6 3.345 151.2 0.003 42.4 0.867

−

61.6 3.403 145.5 0.005 42.7 0.861

−

64.9 3.361 140.9 0.005 59.5 0.859

−

69.1 3.375 136.3 0.004 45.4 0.852

−

72.1 3.350 132.3 0.003 58.3 0.846

−

75.6 3.304 127.9 0.003 73.9 0.847

−

79.4 3.347 124.8 0.006 81.1 0.839

−

82.4 3.325 121.2 0.006 98.3 0.839

−

85.6 3.275 117.3 0.006 100.5 0.838

−

88.2 3.284 113.7 0.004 114.6 0.834

−

91.7 3.283 111.0 0.005 104.8 0.830

−

94.3 3.224 106.5 0.005 114.1 0.831

−

96.9 3.333 104.3 0.008 127.8 0.837

−

99.5 3.251 101.1 0.009 126.3 0.831

−

101.9 3.381 96.0 0.008 134.1 0.833

−

C)

°°°°

21

S

177.7 0.002 108.8 0.996

−

172.4 0.003 64.7 0.986

−

167.4 0.004 51.3 0.980

−

164.1 0.005 55.8 0.965

−

162.4 0.005 60.6 0.958

−

162.9 0.006 46.6 0.950

−

163.8 0.006 42.9 0.941

−

166.3 0.006 45.9 0.935

−

169.2 0.005 42.1 0.929

−

173.1 0.007 34.0 0.918

−

177.3 0.007 46.9 0.914

−

12

S

22

S

2.4

−

4.0

−

5.8

−

7.5

−

8.6

−

10.1

−

11.2

−

12.4

−

13.8

−

14.9

−

16.0

−

17.0

−

18.3

−

19.5

−

20.4

−

21.1

−

22.1

−

23.0

−

24.4

−

25.1

−

25.9

−

26.4

−

27.4

−

28.2

−

29.1

−

29.7

−

30.6

−

31.4

−

32.0

−

33.4

−

34.0

−

24

Data Sheet P14730EJ2V0DS00

PACKAGE DIMENSIONS

6 PIN SUPER MINIMOLD (UNIT: mm)

1.3

2.0±0.2

0.9±0.1

0.650.65

0.7

2.1±0.1

1.25±0.1

–0.05

+0.1

0.2

0.1 MIN.

+0.1

–0.05

0.15

µµµµ

PC8179TB

0 to 0.1

Data Sheet P14730EJ2V0DS00

25

µµµµ

PC8179TB

NOTES ON CORRECT USE

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).

All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values

should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered under the following recommended conditions. For soldering methods and

conditions other than those recommended below, contact your NEC sales representative.

Soldering Method Soldering Conditi ons Recommended Condition Symbol

Infrared Reflow Package peak t emperature: 235°C or below

Time: 30 seconds or less (at 210°C) Count: 3, Exposure limi t: None

VPS Package peak t em perature: 215°C or below

Time: 40 seconds or less (at 200°C) Count: 3, Exposure limi t: None

Wave Soldering Soldering bath temperature: 260°C or below

Time: 10 seconds or less Count: 1, Exposure limi t: None

Partial Heating Pin temperature: 300°C

Time: 3 seconds or less (per side of device) Exposure limit: None

After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.

Note

IR35-00-3

VP15-00-3

WS60-00-1

–

Caution Do not use different soldering methods together (except for partial heating).

For details of recommended soldering conditions for surface mounting, refer to information document

SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E)

.

26

Data Sheet P14730EJ2V0DS00

[MEMO]

µµµµ

PC8179TB

Data Sheet P14730EJ2V0DS00

27

µµµµ

ATTENTION

PC8179TB

OBSERVE PRECAUTIONS

FOR HANDLING

ELECTROSTATIC

SENSITIVE

DEVICES

•

The information in this document is current as of August, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4