Datasheet UPC8172TB-E3, UPC8172TB Datasheet (NEC)

PRELIMINARY DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUIT

PC8172TB

µµµµ

SILICON MMIC 2.5 GHz FREQUENCY UP-CONVERTER

FOR WIRELESS TRANSCEIVER

DESCRIPTION

The µPC8172TB is a silicon monolithic integrated circuit designed as frequency up-converter for wireless
transceiver transmitter stage. This IC is manufactured using NEC’s 30 GHz f
silicon bipolar process.

This IC is as same circuit current as conventional µPC8106TB, but operates at higher frequency, higher gain and
lower distortion. Consequently this IC is suitable for mobile communications.

FEATURES

• Recommended operating frequency : f

• Higher IP

• High-density surface mounting : 6-pin super minimold package

• Supply voltage : VCC = 2.7 to 3.3 V

3

RFout

= 0.8 to 2.5 GHz

: CG = 9.5 dB TYP., OIP3 = +7.5 dBm TYP. @ f

max.

UHS0 (Ultra High Speed Process)

RFout

= 0.9 GHz

APPLICATIONS

• PCS1900M

• 2.4 GHz band transmitter/receiver system (wireless LAN etc.)

ORDERING INFORMATION

Part Number Package Marking Supplying Form

µ

PC8172TB-E3 6-pin super minimold C3A

Remark

To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:

PC8172TB)

µ

•

Embossed tape 8 mm wide.

•

Pin 1, 2, 3 face the tape perf oration side.

•

Qty 3 kpcs/reel.

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14729EJ1V0DS00 (1st edition)
Date Published June 2000 N CP(K)
Printed in Japan

Caution Electro-static sensitive devices

©

2000

PIN CONNECTIONS

µµµµ

PC8172TB

(Top View)

3

2

1

C3A

SERIES PRODUCTS (T

CC

Part Number

PC8172TB 9 0.8 to 2.5 9.5 8.5 8.0

µ

PC8106TB 9 0.4 to 2.0 9 7

µ

PC8109TB 5 0.4 to.2.0 6 4

µ

PC8163TB 16.5 0.8 to 2.0 9 5.5

µ

Part Number

I

(mA)

@RF 0.9 GHz

4

4

5

5

6

6

= +25°C, VCC = VPS = V

A

RFout

f

(GHz)

Note

(Bottom View)

3

2

1

= 3.0 V, ZS = ZL = 50

RFout

CG (dB)

@RF 0.9 GHz

O(sat)

P

(dBm) OIP3 (dBm)

@RF 1.9 GHz @RF 2.4 GHz

Note

@RF 1.9 GHz @RF 2.4 GHz

@RF 0.9 GHz

Pin No. Pin Name

1 IFinput
2GND
3 LOinput
4PS
5V
6 RFoutput

)

ΩΩΩΩ

−

−

−

Note

@RF 1.9 GHz @RF 2.4 GHz

CC

PC8172TB +0.5 0

µ

PC8106TB

µ

PC8109TB

µ

PC8163TB +0.5

µ

RFout

= 0.83 GHz @ µPC8163TB

f

Note

Remark

Typical performance. Please refer to

2

−

5.5

−

To know the associated product, please refer to each latest data sheet.

BLOCK DIAGRAM (FOR THE

LOinput

GND

IFinput

4

−

7.5

−

2

−

PC8172TB)

µµµµ

0.5 +7.5 +6.0 +4.0

−

−

−

−

+5.5 +2.0
+1.5
+9.5 +6.0

ELECTRICAL CHARACTERISTICS

(Top View)

PS

V

RFoutput

in detail.

CC

−

1.0

−

−

−

2

Preliminary Data Sheet P14729EJ1V0DS00

µµµµ

PC8172TB

SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEM)

Wireless Transceiver

Low Noise Tr.

RX

DEMOD.

I

Q

PLL

TX

SW

PA

VCO

PC8172TB

µ

÷N

To know the associated products, please refer to each latest data sheet.

PLL

I

0°

Phase
shifter

90°

Q

Preliminary Data Sheet P14729EJ1V0DS00

3

PIN EXPLANATION

µµµµ

PC8172TB

Pin
No.

1 IFinput

2GND GND

3 LOinput

5VCC2.7 to 3.3
6 RFoutput Same

4PS VCC/GND

Pin

Name

Applied

Voltage

(V)

−

−

bias as

CC

V
through
external
inductor

Pin

Voltage

Note

(V)

1.4 This pin is IF input t o doubl e bal -

−

2.3 Local input pin. Recommendable

−

−

−

Function and Explanation Equivalent Circuit

anced mixer (DBM). The input i s
designed as high impedance.
The circuit contributes to sup­press spurious signal. A l so this
symmetrical ci rcuit can keep
specified performance insensitive
to process-condition distribution.
For above reason, double bal­anced mixer is adopted.

GND pin. Ground pattern on the
board should be formed as wide
as possible. Track Lengt h should
be kept as short as poss i bl e to
minimize ground impedance.

input level is −10 to 0 dBm.
Supply voltage pin.
This pin is RF output from DB M .

This pin is designed as open
collector. Due to the high i m ped­ance output, this pin s houl d be
externally equipped with LC
matching circuit t o next stage.

Power save control pin. B i as
controls operation as foll ows.

5
6

3

1

2

V

CC

5

Each pin voltage is measured with V

Note

4

Pin bias Control

CC

V
GND Power Save

CC

= VPS = V

Preliminary Data Sheet P14729EJ1V0DS00

RFout

Operation

= 3.0 V.

GND

4

2

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Test Conditions Rating Unit

µµµµ

PC8172TB

Supply Voltage V
PS pin Input Voltage V
Power Dissipation of Package P

CC

PS

TA = +25°C 3.6 V
TA = +25°C 3.6 V

D

Mounted on double-side copperclad 50 × 50 × 1.6
mm epoxy glass PWB

A

(T

= +85°C)
Operating Ambient Temperature T
Storage Temperature T
Maximum Input Power P

A

stg

in

RECOMMENDED OPERATING CONDITIONS

Parameter Symbol Test Condi tions MIN. TYP. MAX. Unit

Supply Voltage V

Operating Ambient Temperature T
Local Input Level P
RF Output Frequency f
IF Input Frequency f

CC

LOin

RFout

IFin

The same voltage should be applied
to pin 5 and 6

A

ZS = 50 Ω (without matching)
With external matching c i rcuit 0.8

200 mW

40 to +85 °C

−

55 to +150 °C

−

+10 dBm

2.7 3.0 3.3 V

40 +25 +85 °C

−

10

−

50

50dBm

−

−

−

2.5 GHz

400 MHz

ELECTRICAL CHARACTERISTICS

(TA = +25°C, VCC = V

RFout

= 3.0 V, f

Parameter Symbol
Circuit Current I
Circuit Current In Power Save

Mode
Conversion Gain

Saturated RF Output Power

RFout

Loin

Note

f
f

Loin

< f

< f

RFout

@ f
@ f

RFout

= 0.9 GHz

RFout

= 1.9 GHz/2.4 GHz

IFin

= 240 MHz, P

CC

CC(PS)

I

CG1 f
CG2 f
CG3 f

O(sat)

P

O(sat)

P

O(sat)

P

LOin

=

5 dBm, and VPS

−−−−

Test Conditions

Note

2.7 V unless otherwise specified)

≥≥≥≥

MIN. TYP. MAX. Unit
No Signal 5.5 9.0 13 mA
VPS = 0 V

RFout

RFout

RFout

RFout

1f

RFout

2f

RFout

3f

= 0.9 GHz, P
= 1.9 GHz, P
= 2.4 GHz, P
= 0.9 GHz, P
= 1.9 GHz, P
= 2.4 GHz, P

IFin

= −30 dBm 6.5 9.5 12.5 dB

IFin

= −30 dBm 5.5 8.5 11.5 dB

IFin

= −30 dBm 5 8.0 11.0 dB

IFin

= 0 dBm

IFin

= 0 dBm

IFin

= 0 dBm

−−

2.5 +0.5

−

3.5 0

−

4

−

0.5

−

2

−

−

−

A

µ

dBm
dBm
dBm

Preliminary Data Sheet P14729EJ1V0DS00

5

OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY

(TA = +25°C, VCC = V

RFout

= 3.0 V, P

LOin

=

5 dBm, and VPS

−−−−

2.7 V unless otherwise specified)

≥≥≥≥

µµµµ

PC8172TB

Parameter Symbol

Output Third-Order Distortion
Intercept Point

Input Third-Order Distortion
Intercept Point

SSB Noise Figure

Rise time T

Response Time

RFout

f

Note

Loin

f

< f

< f

Fall time T

Loin

@ f

RFout

@ f

RFout
RFout

OIP31f
OIP32f

3

OIP

3f
IIP31f
IIP32f

3

IIP

3f
SSB•NF1 f
SSB•NF2 f
SSB•NF3 f

PS(rise)

PS(fall)

= 0.9 GHz
= 1.9 GHz/2.4 GHz

Test Conditions

RFout

= 0.9 GHz +7.5 dBm

RFout

= 1.9 GHz +6.0 dBm

RFout

= 2.4 GHz

RFout

= 0.9 GHz

RFout

= 1.9 GHz

RFout

= 2.4 GHz

RFout

= 0.9 GHz, f

RFout

= 1.9 GHz, f

RFout

= 2.4 GHz, f

VPS: GND → V

IFin

= 240 MHz 9.5 dB

IFin

= 240 MHz 10.4 dB

IFin

= 240 MHz 10.6 dB

CC

Note

IFin

f

1 = 240 MHz

IFin

f

2 = 241 MHz

IFin

f

1 = 240 MHz

IFin

f

2 = 241 MHz

Data Unit

+4.0 dBm

2.0 dBm

−

2.5 dBm

−

4.0 dBm

−

1

VPS: VCC → GND 1.5

sPower Save

µ

s

µ

6

Preliminary Data Sheet P14729EJ1V0DS00

µµµµ

PC8172TB

TEST CIRCUIT 1 (f

Spectrum Analyzer

50 Ω

1 000 pF

V

CC

µ

1 F

TEST CIRCUIT 2 (f

Spectrum Analyzer

50 Ω

1 000 pF

CC

V

RFout

100 pF

68 pF

RFout

2.75 pF

= 900 MHz)

Strip Line

1 pF

µ

1 F

= 1.9 GHz)

Strip Line

100 pF

10 nH

1 000 pF

470 nH

1 000 pF

6

5

6

5

RFoutput

V

CC

PS

RFoutput

V

CC

PS

IFinput

GND

LOinput

IFinput

GND

LOinput

100 pF

1

2

100 pF

34

100 pF

1

2

100 pF

34

Signal Generator

50 Ω

Signal Generator

50 Ω

Signal Generator

50 Ω

Signal Generator

50 Ω

µ

1 F

30 pF

TEST CIRCUIT 3 (f

Spectrum Analyzer

50 Ω

1 000 pF

V

CC

µ

1 F

10 pF

µ

1 F

= 2.4 GHz)

RFout

100 pF

1.75 pF

µ

1 F

Strip Line

470 nH

1 000 pF

6

5

RFoutput

CC

V

PS

IFinput

GND

LOinput

100 pF

1

2

100 pF

34

Signal Generator

50 Ω

Signal Generator

50 Ω

Preliminary Data Sheet P14729EJ1V0DS00

7

PACKAGE DIMENSIONS

6-pin super minimold (Unit: mm)

2.0±0.2

1.3

0.9±0.1

0.650.65

0.7

2.1±0.1

1.25±0.1

–0.05

+0.1

0.2

0.1 MIN.

–0

+0.1

0.15

µµµµ

PC8172TB

0 to 0.1

8

Preliminary Data Sheet P14729EJ1V0DS00

µµµµ

PC8172TB

NOTE ON CORRECT USE

(1) Observe precautions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern as wide as possible to keep the minimum ground impedance (to prevent undesired os-

cillation).
(3) Connect a bypass capacitor (example: 1 000 pF) to the VCC pin.
(4) Connect a matching circuit to the RF output pin.
(5) The DC cut capacitor must be each attached to the input and output pins.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered under the following recommended conditions. For soldering methods and condi-

tions other than those recommended below, contact your NEC sales representative.

Soldering Method Soldering Conditions Recommended Condition Symbol

Infrared Reflow Package peak temperature: 235°C or below

Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limi t: None

VPS Package peak temperature: 215°C or below

Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limi t: None

Wave Soldering S ol deri ng bath temperature: 260°C or below

Time: 10 seconds or less
Count: 1, Exposure limi t: None

Partial Heating Pin temperature: 300°C

Time: 3 seconds or less (per side of device)
Exposure limit: None

After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.

Note

Note

Note

Note

Note

IR35-00-3

VP15-00-3

WS60-00-1

−

Caution Do not use different soldering methods together (except for partial heating).

For details of recommended soldering conditions for surface mounting, refer to information document

SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Preliminary Data Sheet P14729EJ1V0DS00

9

[MEMO]

µµµµ

PC8172TB

10

Preliminary Data Sheet P14729EJ1V0DS00

[MEMO]

µµµµ

PC8172TB

Preliminary Data Sheet P14729EJ1V0DS00

11

µµµµ

PC8172TB

ATTENTION

OBSERVE PRECAUTIONS

FOR HANDLING

ELECTROSTATIC

SENSITIVE

DEVICES

•

The information in this document is current as of June, 2000. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.

•

No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

•

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.

•

Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.

•

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.

•

NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

M8E 00. 4