Datasheet UPD16814GS Datasheet (NEC)

DATA SHEET

MOS INTEGRATED CIRCUIT

µ

PD16814

MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT

DESCRIPTION

The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By
complementing the P channel and N channel of the output stage, the circuit current is substantially improved as
compared with that of the conventional charge pump driver.

Because the dual H bridge driver circuits at the output stage are independent of each other, this IC is ideal as the
driver circuit for a 1- to 2-phase excitation bipolar driving stepping motor for the head actuator of an FDD.

FEATURES

• Low ON resistance (sum of ON resistance of top and bottom FETs)

ON1 = 2.0 Ω TYP.

R

• Low current consumption: IDD = 100 µA MAX.

• Four input modes independently controlling dual H bridge drivers

• Stop and Brake modes selectable

• Surface-mount mini-mold package: 16-pin plastic SOP (300 mil)

PIN CONFIGURATION (Top View)

V

M1

1A

PGND

1

2A

V

DD

IN

1

IN

3

IN

2

ORDERING INFORMATION

Part Number Package

µ

PD16814GS 16-pin plastic SOP (300 mil)

1

2

3

4

5

6

7

8

µ

PD16814GS

16

15

14

13

12

11

10

9

NC

1B

PGND

2B

V

M2

SEL

IN

4

DGND

2

The information in this document is subject to change without notice.

Document No. S10112EJ4V0DS00 (4th edition)
Date Published August 1997 N
Printed in Japan

©

1997

BLOCK DIAGRAM

6IN

1

8IN

2

11SEL

7IN

3

10IN

4

CONTROL
CIRCUIT 1

CONTROL
CIRCUIT 2

µ

PD16814

V

DD

5

V

M

V

M1

“H”

BRIDGE 1

“H”

BRIDGE 2

1

2

15

3

12

4

13

1A

1B

PGND

M2

V

2A

2B

1

+

9DGND 14

FUNCTION TABLE

• In Stop mode (SEL = High)

Excitation Direction

—— LLLLSS

H2R LLLHSR
H2FLLHLSF

—— L L H H S S

H1RLHLLRS
<3> L H L H R R
<2> L H H L R F
H1R LHHHRS
H1F HLLLFS
<4> H L L H F R
<1> HLHLFF
H1FHLHHFS

—— H H L L S S

H2RHHLHSR
H2F HHHLSF

—— HHHHSS

IN1 IN2 IN3 IN4 H1 H2

PGND

2

H

1

F

<4><

2

RH

H

<

><

3

H

1

R

>

1

2

F

>

2

2

• In Brake mode (SEL = Low)

µ

PD16814

Excitation Direction

IN1 IN2 IN3 IN4 H1 H2

—— LLLLBB

H2R LLLHBR
H2FLLHLBF

—— L L H H B B

H1RLHLLRB
<3> L H L H R R
<2> L H H L R F
H1R LHHHRB
H1F HLLLFB
<4> H L L H F R
<1> HLHLFF
H1FHLHHFB

—— H H L L B B

H2RHHLHBR
H2F HHHLBF

—— HHHHBB

F: Forward R: Reverse S: Stop B: Brake

FORWARD

V

M

ON

AB

OFF

OFF

ON

REVERSE

V

M

OFF

AB

ON

ON

OFF

STOP

V

M

OFF

AB

OFF

OFF

OFF

BRAKE

V

M

OFF

AB

ON

OFF

ON

3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Parameter Symbol Ratings Unit
Supply voltage (motor block) VM –0.5 to +7 V
Supply voltage (control block) VDD –0.5 to +7 V
Power dissipation Pd1 0.862

Pd2 1.087
Instantaneous H bridge driver current ID (pulse) ±1.0
Input voltage VIN –0.5 to VDD + 0.5 V
Operating temperature TA 0 to 60 °C
Junction temperature Tj MAX. 150 °C
Storage temperature Tstg –55 to +125 °C

Note 1

Note 2

Note 2,3

Notes1. IC alone.

2. When mounted on board (100 × 100 × 1 mm, glass epoxy)

3. t ≤ 5 ms, Duty ≤ 40%

µ

PD16814

W

A

1.2
When mounted
on board

1.0

IC alone

0.8

(W)

d

0.6

0.4

Average power dissipation P

0.2

d

vs. TA Characteristics

P

0

20 40 60 80

A

Ambient temperature T

(°C)

4

µ

PD16814

RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)

Parameter Symbol MIN. TYP. MAX. Unit
Supply voltage (motor block) VM 4.0 5.0 6.0 V
Supply voltage (control block) VDD 4.0 5.0 6.0 V
H bridge drive current
Operating temperature TA 060°C

Note

IDR ±415 mA

Note When mounted on board (100 × 100 × 1 mm, glass epoxy)

ELECTRICAL CHARACTERISTICS (Within recommended operating conditions unless otherwise specified)

Parameter Symbol Condition MIN. TYP. MAX. Unit
VM pin current with output transistor OFF IM VM = 6.0 V, VDD = 6.0 V 1.0
VDD pin current IDD 0.1 mA
Control pin high-level input current IIH VIN = VDD 1.0
Control pin low-level input current IIL VIN = 0 V –1.0
Control pin high-level input voltage VIH 3.0
Control pin low-level input voltage VIL –0.3 0.8 V
H bridge circuit ON resistance
RON relative accuracy

H bridge output circuit propagation delay time tPHL VM = 5 V, VDD = 5 V
H bridge output circuit propagation delay time tPLH
H bridge output circuit rise time tTHL VM = 5 V, VDD = 5 V
H bridge output circuit fall time tTLH

Note 1

RON1 VM = 5 V, VDD = 5 V 2.0 4.0 Ω

∆

RON

∆

RON Excitation direction <1>, <3> ±10

Excitation direction <2>, <4>

TA = 25 °C, RM = 20 Ω

TA = 25 °C, RM = 20 Ω

Note 2

Note 3

Note 3

VDD + 0.3

1.8 2.5

0.2 0.65

0.2 0.4

0.1 0.2

µ

A

µ

A

µ

A

V

±5%

µ

s

µ

s

µ

s

µ

s

Notes 1. Sum of ON resistance of top and bottom transistors

2. For the excitation direction, refer to FUNCTION TABLE.

3.

IN1-IN4

tPHL

IM

tTHL

tPLH

tTLH

5

TYPICAL CHARACTERISTICS

ON

vs. Tj Characteristics

R

4

µ

PD16814

ON

vs. VDD (= VM) Characteristics

R

4

RON = 20 Ω

3

(Ω)

ON

2

H bridge ON resistance R

1

0

25 50 75 100 125 150

Operating junction temperature Tj (˚C)

t

PHL

vs. TA Characteristics

4

µ

( s)

PHL

3

(Ω)

ON

2

1

H bridge ON resistance R

0

4.0 5.0 6.0

Supply voltage VDD (= VM) (V)

PLH

vs. TA Characteristics

t

0.8

µ

0.7

( s)

PLH

3

2

1

H bridge output curcuit propagation delay time t

0

25 50 75 100 125 150

Operating temperature TA (˚C)

0.6

0.5

0.4

0.3

0.2

0.1

H bridge output curcuit propagation delay time t

0

25 50 75 100 125 150

Operating temperature TA (˚C)

6

STEPPING MOTOR EXCITATION TIMING CHART

Inner circumference seek

IN

1

IN

2

IN

3

IN

4

Excitation
direction

H

1

F <1> H2F <2> H1R <3> H2R <4> H1F <1> H2F <2> H1R

Outer circumference seek

IN

1

IN

2

IN

3

IN

4

Excitation
direction

H

1

F <4> H2R <3> H1R <2> H2F <1> H1F <4> H2R <3> H1R

µ

PD16814

• Input signal wave when SEL = LOW (Brake mode)

To set the H bridge in the Brake mode (refer to FUNCTION TABLE), use input signals that set the Brake mode
from IN

2 (IN4).

Example 1 From Forward to Brake

IN1/IN

IN2/IN

3

4

FB

Correct

IN1/IN

IN2/IN

3

4

FB

Incorrect

Example 2 From Reverse to Brake

IN1/IN

IN2/IN

3

4

RB

Correct

IN1/IN

IN2/IN

3

4

RB

Incorrect

Remark This is because noise may be output due to the configuration of the internal circuit.

7

µ

NOTES ON PWM DRIVING CONTROL

Keep in mind the following points when executing PWM.

• Be sure to input the signals to control PWM driving from IN

• Because the logic of the PWM driving control inputs (IN2 and IN4) to create the Brake status is inverted depending
on whether the Forward or Reverse mode is used, care must be exercised when PWM driving is controlled at
a duty factor other than 50%.

Example 1 PWM driving in Forward mode

IN1/IN

3

IN2/IN

4

2 and IN4.

IN1/IN

3

IN2/IN

4

PD16814

FBFBFBFBFBF

Correct

FBFBFBFBFBF

Incorrect

Example 2 PWM driving in Reverse mode

IN1/IN

IN2/IN

3

4

RBRBRBRBRBR

Correct

IN1/IN

IN2/IN

3

4

RBRBRBRBRBR

Incorrect

Remark This is because noise may be output due to the configuration of the internal circuit.

8

PACKAGE DIMENSION

16 PIN PLASTIC SOP (300 mil)

18

µ

PD16814

916

detail of lead end

P

A

G

F

E

C

D

NOTE

Each lead centerline is located within 0.12 mm (0.005 inch) of
its true position (T.P.) at maximum material condition.

N

M

M

B

H

I

J

K

L

ITEM MILLIMETERS INCHES

A

10.46 MAX.

B

0.78 MAX.

C

1.27 (T.P.)
D 0.40 0.016
E

F
G
H

I

J
K 0.20

L 0.6±0.2 0.024

M

N
P3° 3°

+0.10
–0.05

0.1±0.1

1.8 MAX.

1.55

7.7±0.3

5.6

1.1

+0.10
–0.05

0.12

0.10

+7°
–3°

0.412 MAX.

0.031 MAX.

0.050 (T.P.)
+0.004

–0.003

0.004±0.004

0.071 MAX.

0.061

0.303±0.012

0.220

0.043
+0.004

0.008

–0.002
+0.008

–0.009

0.005

0.004

+7°
–3°

P16GM-50-300B-4

9

µ

RECOMMENDED SOLDERING CONDITIONS

It is recommended to solder this product under the conditions shown below.
For soldering methods and conditions other than those listed below, consult NEC.
For details of the recommended soldering conditions, refer to Information Document “Semiconductor Device

Mounting Technology Manual” (C10535E).

Surface Mount Type

Soldering Method Soldering Condition

Infrared reflow Package peak temperature: 235 °C, Time: 30 seconds MAX. (210 °C MIN.) IR35-00-2

Number of times: 2 MAX.

<Precautions>

(1) Start the second reflow after the device temperature rise due to the first

reflow has dropped to room temperature.

(2) Do not clean flux with water after the first reflow.

VPS Package peak temperature: 215 °C, Time: 40 seconds MAX. (200 °C MIN.) VP15-00-2

Number of times: 2 MAX.

<Precautions>

(1) Start the second reflow after the device temperature rise due to the first

reflow has dropped to room temperature.

(2) Do not clean flux with water after the first reflow.

Wave soldering Soldering bath temperature: 260 °C MAX., Time: 10 seconds MAX., WS60-00-1

Number of times: 1
Preheating temperature: 120 °C MAX. (package surface temperature)

Partial heating Pin temperature: 300 °C MAX., Time: 3 seconds MAX. (per side of device) –

Symbol of Recommended
Soldering

PD16814

Caution Do not use two or more soldering methods in combination (except partial heating).

10

µ

NOTES FOR CMOS DEVICES

1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS

Note: Strong electric field, when exposed to a MOS device, can cause destruction

of the gate oxide and ultimately degrade the device operation. Steps must
be taken to stop generation of static electricity as much as possible, and
quickly dissipate it once, when it has occurred. Environmental control must
be adequate. When it is dry, humidifier should be used. It is recommended
to avoid using insulators that easily build static electricity. Semiconductor
devices must be stored and transported in an anti-static container, static
shielding bag or conductive material. All test and measurement tools
including work bench and floor should be grounded. The operator should
be grounded using wrist strap. Semiconductor devices must not be touched
with bare hands. Similar precautions need to be taken for PW boards with
semiconductor devices on it.

PD16814

2 HANDLING OF UNUSED INPUT PINS FOR CMOS

Note: No connection for CMOS device inputs can be cause of malfunction. If no

connection is provided to the input pins, it is possible that an internal input
level may be generated due to noise, etc., hence causing malfunction. CMOS
device behave differently than Bipolar or NMOS devices. Input levels of
CMOS devices must be fixed high or low by using a pull-up or pull-down
circuitry. Each unused pin should be connected to VDD or GND with a
resistor, if it is considered to have a possibility of being an output pin. All
handling related to the unused pins must be judged device by device and
related specifications governing the devices.

3 STATUS BEFORE INITIALIZATION OF MOS DEVICES

Note: Power-on does not necessarily define initial status of MOS device. Produc-

tion process of MOS does not define the initial operation status of the device.
Immediately after the power source is turned ON, the devices with reset
function have not yet been initialized. Hence, power-on does not guarantee
out-pin levels, I/O settings or contents of registers. Device is not initialized
until the reset signal is received. Reset operation must be executed imme­diately after power-on for devices having reset function.

11

µ

PD16814

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.

M4 96.5

2