Datasheet UPC8129GR-E1, UPC8129GR Datasheet (NEC)

DATA SHEET

BIPOLAR ANALOG INTEGRATED CI RCUIT

µµµµ

PC8129GR

UP CONVERTER WITH AGC FUNCTION + QUADRATURE MODULATOR IC

FOR DIGITAL MOBILE COMMUNICATION SYSTEMS

DESCRIPTION

The µPC8129GR is a silicon monolithic integrated circuit designed as indirect quadrature modulator for digital mobile communication systems. This modulator consists of 0.8 GHz to 1.9 GHz up-converter and 100 MHz to 400 MHz quadrature modulator which are packaged in 20 pin SSOP. The device has power save function and can operate 2.7 to 5.5 V supply voltage, therefore, it can contribute to make RF block small, high performance and low power consumption.

FEATURES

• High linearity up converter is incorporated; P

• Wide operating frequency range. Up converter; f

Modulator ; f

• External IF filter can be applied between modulator output and up converter input terminal.

• Low phase difference due to digital phase shifter is adopted.

• Supply voltage: VCC = 2.7 to 5.5 V

• Equipped with power save function.

• 20 pin SSOP suitable for high density surface mounting.

RFout

= –5 dBm TYP./@f

RFout

= 800 MHz to 1900 MHz

LO1in

= 200 MHz to 800 MHz

MODout

f

= 100 MHz to 400 MHz, f

RFout

= 900 MHz

I/Q

= DC to 10 MHz

APPLICATIONS

• Digital cellular phones (ex. GSM etc…)

• Digital cordless phones

ORDERING INFORMATION

PART NUMBER PACKAGE SUPPLYING FORM

µ

PC8129GR-E1 20 pin plastic SSOP

(225 mil)

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

*

PC8129GR)

µ

Caution electro-static sensitive device

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Embossed tape 12 mm wide. QTY 2.5 kp/Reel. Pins 1 through 10 are in pull-out direction.

Document No. P12781EJ2V0DS00 (2nd edition) Date Published October 1999 N CP(K) Printed in Japan

The mark shows major revised points.

©

1997, 1999

INTERNAL BLOCK DIAGRAM AND PIN CONNECTIONS

µµµµ

PC8129GR

Up-Con in

Up-Con inb

MODout

Qb

LO1 in

LO1 inb

GND

1

2

3

I

4

Ib

5

6

Q

7

8

9

10

90deg. Phase Shifter ( 2)

Reg.

20

19

18

17

16

15

14

13

12

11

VCC (MOD)

V

CC

(Up-con)

RFout

GND

V

PS

V

AGC

GND

LO2 in

LO2 inb

GND

QUADRATURE MODULATOR SERIES PRODUCT

CC

Part Number Functions

PC8101GR 150 MHz Quad.Mod

µ

PC8104GR RF Up-Converter + IF

µ

I

(mA) 15/@2.7 V 28/@3.0 V

Quad.Mod

PC8105GR 400 MHz Quad.Mod

µ

PC8110GR 1 GHz Direct Quad.Mod

µ

PC8125GR RF Up-Converter + IF

µ

16/@3.0 V

24/@3.0 V 36/@3.0 V

Quad.Mod + AGC

PC8126GR 915 to 960 915 to 960

µ

PC8126K

µ

PC8129GR

µ

900 MHz Direct Quad.Mod with Offset-Mixer

2LO IF Quad. Mod+RF

×

35/@3.0 V

28/@3.0 V

Up-Converter

µ

PC8139GR-7JH

PC8158K RF Up-Converter + IF

µ

Transceiver IC (1.9 GHz Indirect Quad. Mod + RX-IF + IF VCO)

TX: 32.5 RX: 4.8 /@3.0 V

28/@3.0 V

Quad.Mod + AGC

LO1in

f

(MHz)

100 to 300 50 to 150

MODout

f (MHz)

100 to 400

RF Mixer

RFout

f

External F/F CT-2 etc.

900 to 1 900

100 to 400 External

800 to 1 000 External

220 to 270

1 800 to 2 000

889 to 960 889 to 960

200 to 800 100 to 400

220 to 270

100 to 300

800 to 1 900

1 800 to 2 000

800 to 1 500

(MHz)

Phase Shifter

Doubler + F/F

F/F

CR

Package Application

20-pin SSOP (225 mil)

Digital Comm.

16-pin SSOP (225 mil)

20-pin SSOP (225 mil)

PDC800 MHz, etc. PHS

PDC800 MHz 28-pin QFN 20-pin

SSOP (225 mil) 30-pin

GSM,

DCS1800, etc.

PHS TSSOP (225 mil)

28-pin QFN

PDC800 M/1.5 G

2

Data Sheet P12781EJ2V0DS00

APPLICATION EXAMPLE

[GSM]

SUB ANT

µµµµ

PC8129GR

MAIN ANT

TX

SW

RX

LNA 1st MIX

PA

SW

AGC

1st. LO

PLL1 PLL2

MODout = f

LO

/2

(F/F)

φ

2nd MIX

2nd. LO

0 °

90 °

PC8129GR

µ

DEMO.

LO

f

I Q

I

Q

Data Sheet P12781EJ2V0DS00

3

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATING UNIT CONDITION

µµµµ

PC8129GR

Supply Voltage V Power Save Voltage V AGC Control Voltage V

CC

PS

AGC

6.0 V TA = +25 °C

6.0 V

6.0 V IQ DC Offset Voltage IQ (DC) 4.0 V Power Dissipation P Operating Ambient Temperature T Storage Temperature T

Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB.

Note

D

A

stg

430 mW

–40 to +85 °C

–55 to +150 °C

RECOMMENDED OPERATING CONDITIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS Supply Voltage V Operating Ambient Temperature T Up Converter RF Frequency f Up Converter Input Freq. f Modulator Output Frequency f LO1 Input Frequency f LO1 Input Level P LO2 Input Frequency f LO2 Input Level P I/Q Input Frequency f I/Q Input Amplitude V

CC

A

RFout

UPCONin

MODout

LO1in

LO2in

I/Qin

2.7 3.0 5.5 V –40 +25 +85 °C 800 1900 MHz 100 400 MHz

200 800 MHz –15 –10 –5 dB m 800 1800 MHz –15 –10 –5 dB m

DC 10 M Hz

600 mV

A

= +85 °C

T

P-P

Single ended Input

Note

4

Data Sheet P12781EJ2V0DS00

ELECTRICAL CHARACTERISTICS (1)

Conditions (unless otherwise specified):

TA = +25 °C, VCC = 3 V, VPS = 3 V, RPS = 1 kΩ, V

AGC

= 3 V, R

I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias (Q) = Vbias (Qb) = 1.5 V)

I/Qin

f

= 67.7 kHz, V

I/Qin

= 500 mV

P-P

(single ended input, Ib = Qb = 0 mV

Modulation Pattern: <0000>

LO1in

f

= 500 MHz, P

LO2in

f

= 1150 MHz, P

UPCONin

f

RFout

f

MODout

= f

= 900 MHz – f

PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS UP CONVERTER + QUADRATURE MODULATOR TOTAL Total Circuit Current I Total Circuit Current at Power S ave

Mode Total Output Power P Local Oscillator Carrier Leakage LoL –40 –26.5 dBc f Image Rejection (Side Band Leak ) ImR –30 –26.5 dBc AGC Gain Control Rang GCR 28 40 dB V Power Save Rise Time TPS(rise) 2.0 5.0 Power Save Fall Time TPS(fall) 2.0 5.0 UP CONVERTER BLOCK Circuit Current at Power Save Mode I

QUADRATURE MODULATOR BLOCK Circuit Current at Power Save Mode I

= f

LO1in

= –10 dBm

LO2in

= –10 dBm

LO1in

/2 + f

I/Qin

= 250 MHz + f

CC(TOTAL)

CC(PS)TOTAL1

I

(Up con.)

(MOD)

RFout

CC(PS)

I/Qin

20 28 37 mA No input signal

–8 –5 –2 dBm

AGC

= 10 k

0.6 10

Ω

P-P

5.0

)

AVPS ≤ 0.5 V

µ

sVPS(Low) → VPS(High)

µ

sVPS(High) → VPS(Low)

µ

AVPS ≤ 0.5 V

µ

AVPS ≤ 0.5 V

µ

µµµµ

PC8129GR

LoL

LO2

= f

AGC

LO1

– f

/2

= 2.5 V to 0 V

Data Sheet P12781EJ2V0DS00

5

STANDARD CHARACTERISTICS FOR REFERENCE (1)

Conditions (unless otherwise specified):

TA = +25 °C, VCC = 3 V, VPS = 3 V, RPS = 1 kΩ, V

AGC

= 3 V, R

I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias (Q) = Vbias (Qb) = 1.5 V)

I/Qin

f

= 67.7 kHz, P

I/Qin

= 500 mV

P-P

(single ended input, Ib = Qb = 0 mV

Modulation Pattern: <0000>

LO1in

f

= 500 MHz, P

LO2in

f

= 1150 MHz, P

UPCONin

f

RFout

f

MODout

= f

= 900 MHz – f

PARAMETER SYMBOL REFERENCE UNIT TEST CONDITIONS UP CONVERTER + QUADRATURE MODULATOR TOTAL Total Circuit Current at Power-S ave

Mode Phase Error UP CONVERTER BLOCK UP Con. Circuit Current I UP Con. Circuit Current at Power-Save

Mode Conversion Gain CG 12 dB P Maximum Output Power P Output 3rd Order Intercept Point OIP QUADRATURE MODULATOR BLOCK MOD. Circuit Current I Output Power P LO1 Carrier Leakage LoL –40 dBc f Image Rejection (Side Band Leak ) ImR –30 dBc I/Q 3rd Order Intermodulation Dis tortion IM I/Q Input Impedance Z IQ Bias Current I LO1 Input VSWR VSWR Output Noise Floor –133 dB c /Hz

= f

LO1in

= –10 dBm

LO2in

= –10 dBm

LO1in

/2 + f

I/Qin

= 250 MHz + f

CC(PS)TOTAL2

I

CC(PS)UpCon

I

I/Qin

∆φ

CC(UpCon)

RF(sat)

3

CC(MOD)

MODout

3I/Q

I/Q

(Lo1)

AGC

= 10 k

Ω

P-P

)

60

AVPS ≤ 0.5 V, V

µ

1.8 deg. (rms) MOD Pattern: PN9

14 mA No input signal 60

AVPS ≤ 0.5 V, V

µ

–1.5 dBm P

+6 dBm f

14 mA No input signal

–16.5 dBm

–50 dBc 200 k

5

Ω

A I, Ib, Q, Qb to GND (each)

µ

1.2 : 1 –

AGC

UPCONin

= –20 dBm

UPCONin

= –4 dBm

UPCONin

= 250.0 MHz/250.2 MHz

LoL

LO1

= f

/2

I to Ib, Q to Qb

f = ±20 MHz

∆

µµµµ

PC8129GR

= 0 V

6

Data Sheet P12781EJ2V0DS00

STANDARD CHARACTERISTICS FOR REFERENCE (2)

Conditions (unless otherwise specified):

TA = +25 °C, VCC = 3 V, VPS = 3 V, RPS = 1 kΩ, V

AGC

= 3 V, R

I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias (Q) = Vbias (Qb) = 1.5 V)

I/Qin

f

= 67.7 kHz, P

I/Qin

= 500 mV

P-P

(single ended input, Ib = Qb = 0 mV

Modulation Pattern: <0000>

LO1in

f

= 500 MHz, P

LO2in

f

= 1650 MHz, P

UPCONin

f

RFout

f

MODout

= f

= 1900 MHz + f

PARAMETER SYMBOL REFERENCE UNIT TEST CONDITIONS UP CONVERTER + QUADRATURE MODULATOR TOTAL Total Output Power P Local Oscillator Carrier Leakage LoL –40 dBc f Image Rejection (Side Band Leak ) ImR –30 dB c AGC Gain Control Rang GCR 45 dB V Phase Error UP CONVERTER BLOCK Conversion Gain CG 5 dB P Maximum Output Power P Output Intercept Point OIP

= f

LO1in

= –10 dBm

LO2in

= –10 dBm

LO1in

/2 + f

I/Qin

= 250 MHz + f

I/Qin

RFout

∆φ

RF(sat)

3

AGC

= 10 k

Ω

P-P

–12 dBm

1.8 deg. (rms) MOD Pattern: PN9

–7 dBm P –1 dBm f

µµµµ

PC8129GR

)

LoL

LO2

= f

AGC

UPCONin

LO1

+ f

/2

= 2.5 V to 0 V

= –20 dBm = –4 dBm

= 250.0 MHz/250.2 MHz

Data Sheet P12781EJ2V0DS00

7

PIN EXPLANATION

µµµµ

PC8129GR

Pin Voltage

Description Equivalent Circuit

Typ. (V)

CC

@V

= 3 V

CC

– RF output from Up-Converter.

Pin No. Symbol

18 RFout V

Supply Voltage (V)

This pin is open collect or out put.

1 UpCon in – 2.2 IF input for Up-converte r.

This pin is high impedance input.

2 UpCon inb – 2.2 Bypass of IF input .

Grounded through external capacitor.

3 MODout – 1.9 Output from modulator.

This is emitter follower output.

4IV

CC

/2 – Input for I signal. This input

impedance is about 200 kΩ. Relations between amplitude

CC

and V

/2 bias of input signal

are following.

CC

/2

(V)

1.5

Signal Level

(mV

≤ ≤

1000

≤

V

1.35

≥

1.75

≥

P-P

400 600

18

1 2

3

Note

)

4 5

5IbV

CC

/2 – Input for I signal. This input

impedance is about 200 kΩ.

CC

V

/2 biased DC signal should

be input.

6QbV

CC

/2 – Input for Q signal. This i nput

impedance is about 200 k

CC

/2 biased DC signal should

V

Ω

be input.

7QV

CC

/2 – Input for Q signal. This i nput

impedance is about 200 kΩ. Relations between amplitude

CC

and V

/2 bias of input signal

are following.

In the case of that I/Q input signals are single ended.

Note

VCC/2

(V)

1.35

≥

1.75

≥

1.5

Signal Level

P-P

(mV

)

400

≤

600

≤

1000

≤

Note

Of course, I/Q signal inputs can be used either single endedly or differentially with proper terminations.

67

8

Data Sheet P12781EJ2V0DS00

PIN EXPLANATION

µµµµ

PC8129GR

Pin Voltage Typ. (V)

CC

@V

Description Equivalent Circuit

= 3 V

Pin No. Symbol

Supply Voltage (V)

8 LO1in – 0 Lo1 input for phase shifter.

This input impedance is 50 matched internally.

9 LO1in b – 2.3 Bypass of Lo1 input.

This pin is grounded through internal capacitor.

10

11

GND for Modulator

0 – Connect to the ground with

minimum inductance. Track length should be kept as short as possible.

12 LO2in b – 1. 9 Bypass of Lo2 input.

Grounded through external capacitor.

13 LO2i n – 1.9 Lo2 input of Up-converter.

This pin is high impedance input.

14

17

GND for Up-con.

0 – Connect to the ground with

minimum inductance. Track length should be kept as short as possible.

15 V

AGC

0 to V

CC

– Input for AGC amplifier.

Total Output Power can be controlled by changing input voltage. And as external series resistance

AGC

(R

) connecting, a slope of

AGC curve can be changed by

AGC

16 Power

Save

0 to V

the resistance (R

CC

– Power save control pin can be

controlled ON/OFF state with bias as follows;

Ω

8

50 Ω

9

13

12

).

16

19 VCC for

Upconverter

20 VCC for

Modulator

: Externally

VPS (V) STATE

2 to VCCON (Active Mode)

0 to 0.5 OFF (Sleep Mode)

2.7 to 5.5 – Supply voltage pin for Upconverter.

2.7 to 5.5 – Supply voltage pin for modulator. Internal regulator can be kept stable condition of suppl y bias against the variable temperature or V

Data Sheet P12781EJ2V0DS00

CC

.

9

µµµµ

STANDARD TYPICAL CHARACTERISTICS <Modulator + Up-Converter Total at 900 MHz>

PC8129GR

Test Circuit 1, TA = +25 °C, VCC = 3 V, VPS = 3 V, RPS = 1 kΩ, V

AGC

= 3 V, R

I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias(Q) = Vbias(Qb) = 1.5 V)

I/Qin

f

= 67.7 kHz, V

Modulation Pattern: All Zero <0000>, f

LO2in

f

= 1150 MHz, P

RFout

f

= 900 MHz – f

40

30

20

- Total Circuit Current - mA

10

CC

I

0

0123456

I/Qin

= 500 mV

LO2in

I/Qin

ICC (TOTAL) vs V

No input signal

VCC - Supply Voltage - V

P-P

(single ended input, Ib = Qb = 0 mV

LO1in

= 500 MHz, P

= –10 dBm, f

UPCONin

= f

MODout

, Unless Otherwise Specified

CC

= f

LO1in

/2 + f

= –10 dBm

I/Qin

AGC

= 10 k

Ω

P-P

)

= 250 MHz + f

I/Qin

ICC (TOTAL) vs V

PS

30

20

10

- Total Circuit Current - mA

CC

I

0

0123

TA = +25 °C

:

T

A

= +85 °C

:

T

A

= –40 °C

:

No input signal

VPS - Power Save Control Voltage - V

ICC (TOTAL) vs T

No input signal

30

20

10

- Total Circuit Current - mA

CC

I

0

–40 –20 0 +20 +40 +60 +80

TA - Operating Ambient Temperature - °C

A

ICC (PS) TOTAL vs T

A

µ

No input signal Vps = 0.5 V

30

20

10

- Total Circuit Current at Power Save Mode - A

CC

0

I

–40 –20 0 +20 +40 +60 +80

TA - Operating Ambient Temperature - °C

10

Data Sheet P12781EJ2V0DS00

µµµµ

PC8129GR

µ

ICC (PS) TOTAL2 vs T

150

A

No input signal Vps = 0.5 V

125

V

AGC

= 0 V

100

75

50

25

- Total Circuit Current at Power Save Mode - A

CC

I

0

–20 0 +20 +40 +60 +80

–40

TA - Operating Ambient Temperature - °C

I

CC

µ

(PS) TOTAL2 vs V

150

CC

No input signal Vps = 0.5 V

125

V

AGC

= 0 V

ICC (PS) TOTAL1 vs V

CC

µ

No input signal Vps = 0.5 V

2

1

- Total Circuit Current at Power Save Mode - A

CC

I

0

0246

VCC - Supply Voltage - V

100

75

50

25

- Total Circuit Current at Power Save Mode - A

CC

I

0

0246

VCC - Supply Voltage - V

P

RFout

, LoL, ImR, IM

0

3I/Q

P

vs V

RFout

CC

–20

ImR

–10

–20

- Total Output Power - dBm

RFout

P

–30

LoL

IM

3I/Q

–30

–40

–50

P

RFout

, LoL, ImR, IM

0

P

–10

–20

- Total Output Power - dBm

RFout

P

LoL

RFout

ImR

IM

3I/Q

vs T

A

–20

–30

–40

0123456

VCC - Supply Voltage - V

Data Sheet P12781EJ2V0DS00

- I/Q 3rd Order Intermodulation Distortion - dBc

3I/Q

LoL - Local Oscillator Carrier Leakage - dBc

ImR - Image Rejection - dBc

IM

–40 –20 0 +20 +40 +60 +80

TA - Operating Ambient Temperature - °C

–50

- I/Q 3rd Order Intermodulation Distortion - dBc

3I/Q

LoL - Local Oscillator Carrier Leakage - dBc

ImR - Image Rejection - dBc

IM

11

P

RFout

, LoL, ImR, IM

3I/Q

vs V

I/Qin

P

RFout

, LoL, ImR, IM

3I/Q

vs P

µµµµ

PC8129GR

LO1in

0

–10

–20

LoL

ImR

P

RFout

–30

- Total Output Power - dBm

RFout

–40

P

IM

3I/Q

100 500 1000 2000 V

I/Qin

- I/Q Input Amplitude - mVp-p

P

RFout

0

–10

vs P

LO2in

–20

–30

–20

–30

–40

–50

–60

LoL - Local Oscillator Carrier Leakage - dBc

ImR - Image Rejection - dBc

–70

–40

- I/Q 3rd Order Intermodulation Distortion - dBc

–50

3I/O

LoL - Local Oscillator Carrier Leakage - dBc

ImR - Image Rejection - dBc

IM

–30 –20 –10 0 +10

7

MOD Pattern: PN9

6

5

4

RFout

P

LO1in

- LO1 Input Level - dBm

vs V

∆Φ

ImR

I/Qin

IM

3I/Q

LoL

0

–10

–20

- Total Output Power - dBm

RFout

P

–30

–20

- Total Output Power - dBm

–30

RFout

P

–40

–40 –20 –10 0–30

P

LO2in

- LO2 Input Level - dBm

P

RFout

+10

0

–10

–20

–30

T

A

–40

- Total Output Power - dBm

–50

RFout

P

–60

= +85 °C

+25 °C

–40 °C

vs V

AGC

3

2

∆Φ

- Phase Error - deg. (rms.)

1

0

100 500 1000

V

I/Qin

- I/Q Input Amplitude - mV

P

RFout

0

–10

–20

–30

–40

- Total Output Power - dBm

RFout

P

–50

= 2.7 V

CC

V

= 3 V

CC

V

GCR = 40.5 dB (V

CC

= 2.7 V)

vs V

GCR = 40.8 dB

CC

= 3 V)

(V

AGC

P-P

= 5.5 V

CC

V

GCR = 41.7 dB (V

CC

= 5.5 V)

–70

12

0231

V

AGC

- AGC Control Voltage - V

–60

0231456

Data Sheet P12781EJ2V0DS00

V

AGC

- AGC Control Voltage - V

+10

–10

µµµµ

PC8129GR

P

RFout

vs V

AGC

µ

PC8129GR REF 0.0 dBm 10 dB/

POWER SAVE RESPONSE

ATT 10dB

0

–20

–30

–40

- Total Output Power - dBm

RFout

P

–50

–60

0

= 80 kΩ, SLOPE = 53 dB/V

AGC

R

123

V

AGC

- AGC Control Voltage - V

GCR =

39.8 dB

= 10 kΩ, SLOPE = 143 dB/V

AGC

R

RBW 3 MHz

VBW 3 MHz

SWP

µ

50 s

CENTER 900.0677 MHz SPAN 0 Hz

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM TYPICAL GMSK MODULATION OUTPUT SPECTRUM

µ

PC8129GR REF 0.0 dBm 10 dB/

ATT 10 dB

1

µ

PC8129GR REF –10.0 dBm 10 dB/

ATT 0 dB

A write B view

MARKER

899.200 MHz –77.25 dB

3

4

ADJ BS

135 kHz

2

DL –10.0 dBm

1

3 4

2

5 6

RBW 3 kHz

VBW 10 kHz

SWP 1.0 s

CENTER 900.0000 MHz SPAN 500 KHz

Multi Marker List

No.1: No.2: No.3: No.4:

***

899.9323 MHz

900.0000 MHz

900.0677 MHz

900.2031 MHz

*** –4.80 dBm –48.02 dBc –29.88 dBc –42.41 dBc

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

3

f

LO1in

2

(= 3fIF)

ATT 10 dB

f

LO2in

2 f

LO1in

(= 4fIF)

5

f

LO1in

2

(=

IF

)

5f

MARKER

900 MHz

–4.67 dBm

µ

PC8129GR REF 0.0 dBm 10 dB/

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

1

f

LO1in

2

(= fIF)

f

LO1in

(= 2fIF)

START 0 Hz STOP 2.460 GHz

RBW 3 kHz

VBW 10 kHz

SWP 5.0 s

CENTER 900. 000 MHz SPAN 2.000 MHz

No.1: No.2: No.3: No.4: No.5: No.6:

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

∆:

Multi Marker List

***

899.200 MHz

899.400 MHz

899.600 MHz

900.400 MHz

900.600 MHz

900.800 MHz

***

–77.25 dB –76.50 dB –68.00 dB –68.25 dB –77.50 dB –77.50 dB

(IN BAND)

µ

PC8129GR REF 0.0 dBm 10 dB/

MKR 900 MHz

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

750 MHz –43.6 dBm

800 MHz –49.5 dBm

CENTER 900.0 MHz SPAN 400.0 MHz

ATT 10 dB

850 MHz –56.6 dBm

950 MHz –68.2 dBm

1000 MHz –53.0 dBm

MARKER

900 MHz

–4.68 dBm

1050 MHz –59.4 dBm

Data Sheet P12781EJ2V0DS00

13

µµµµ

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

(IN BAND)

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

(IN BAND)

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

(IN BAND)

ATT 10 dB

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

CENTER 920.0 MHz SPAN 200.0 MHz

PC8129GR REF 0.0 dBm 10 dB/

µ

MARKER

880.0 MHz –4.64 dBm

870 MHz –55.7 dBm

890 MHz –63.0 dBm

1000 MHz –54.8 dBm

1010 MHz –57.6 dBm

f

LO1in

= 500 MHz

(f

MODout

= 250 MHz

+ f

I/Q

)

f

LO2

= 1130 MHz

f

RFout

= 880 MHz

ATT 10 dB

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

CENTER 920.0 MHz SPAN 200.0 MHz

PC8129GR REF 0.0 dBm 10 dB/

µ

MARKER

900 MHz

–4.66 dBm

850 MHz –56.2 dBm

950 MHz –65.5 dBm

1000 MHz –53.0 dBm

MKR 900 MHz

ATT 10 dB

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

CENTER 920.0 MHz SPAN 200.0 MHz

PC8129GR REF 0.0 dBm 10 dB/

µ

MARKER

900 MHz

–7.41 dBm

f

LO1in

= 500 MHz

(f

MODout

= 250 MHz

+ f

I/Qin

)

f

LO2in

= 1210 MHz

f

RFout

= 960 MHz

– f

I/Qin

MKR 900 MHz

880 MHz –59.9 dBm

920 MHz –51.5 dBm

1000 MHz –49.9 dBm

PC8129GR

14

Data Sheet P12781EJ2V0DS00

µµµµ

PC8129GR

STANDARD TYPICAL CHARACTERISTICS <Modulator + Up-Converter Total at 1900 MHz>

Test Circuit 2, TA = +25 °C, VCC = 3 V, VPS = 3 V, RPS = 1 kΩ, V

AGC

= 3 V, R

I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias(Q) = Vbias(Qb) = 1.5 V)

I/Qin

f

= 67.7 kHz, V

Modulation Pattern: All Zero <0000>, f

LO2in

f

= 500 MHz, P

RFout

f

= 1900 MHz + f

0

–10

–20

–30

–40

–50

- Total Output Power - dBm

RFout

P

–60

–70

0

I/Qin

= 500 mV

LO2in

= –10 dBm, f

I/Qin

, Unless Otherwise Specified

P

RFout

P-P

(single ended input, Ib = Qb = 0 mV

LO1in

= 500 MHz, P

vs V

UPCONin

AGC

= f

MODout

GCR =

= 80 kΩ, SLOPE = 59 dB/V

AGC

R

AGC

R

= 10 kΩ, SLOPE = 154 dB/V

45.4 dB

123

V

AGC

- AGC Control Voltage - V

= f

LO1in

= –10 dBm

I/Qin

/2 + f

AGC

= 10 k

Ω

P-P

)

= 250 MHz + f

I/Qin

P

RFout

0

–10

–20

–30

- Total Output Power - dBm

–40

RFout

P

100 500 1000 2000

V

I/Qin

- I/Q Input Amplitude - mV

vs V

I/Qin

P-P

P

RFout

vs P

LO1in

0

–10

–20

- Total Output Power - dBm

RFout

P

–30

–30 –20 –10 0 +10

P

LO1in

- LO1 Input Level - dBm

P

RFout

0

–10

–20

- Total Output Power - dBm

RFout

P

–30

–40 –30 –10 0 +10–20

P

LO2in

- LO2 Input Level - dBm

vs P

LO2in

Data Sheet P12781EJ2V0DS00

15

µµµµ

PC8129GR

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

µ

PC8129GR REF 0.0 dBm 10 dB/

ATT 10 dB

1

7

MOD Pattern: PN9

6

Φ vs V

∆

I/Qin

5

3

4

2

3

2

Φ - Phase Error - deg. (rms)∆

1

0

100

V

I/Qin

- I/Q Input Amplitude - mVp-p

500 1000 2000

RBW 3 kHz

VBW 10 kHz

SWP 1.0 s

CENTER 1.9000000 GHz SPAN 500 kHz

Multi Marker List

No.1: No.2: No.3: No.4:

***

1.9000677 GHz

1.9000000 GHz

1.8999323 GHz

1.8997969 GHz

***

–12.13 dBm –39.30 dBc –28.98 dBc –41.30 dBc

TYPICAL GMSK MODULATION OUTPUT SPECTRUM TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

3

f

2

(= 3fIF)

LO1in

ATT 10 dB

2 f

LO1in

(= 4fIF)

5

f

2

(= 5fIF)

LO2in

f

LO1in

7

3 f

LO1in

f

LO1in

2

(= 6fIF)

(= 7fIF)

µ

PC8129GR REF –10.0 dBm 10 dB/

MKR

1.899200 GHz

DL –10.0 dBm

ATT 0 dB

A write B view

MARKER

1. 899200 GHz –74. 75 dB

µ

PC8129GR REF 0.0 dBm 10 dB/

MKR 1.900 GHz

1

fLO1in

2

(= fIF)

fLO1in (= 2fIF)

3

2

1

546

MARKER

1.900 GHz

–11. 67 dBm

4 f

LO1in

(= 8fIF)

RBW 3 kHz

VBW 10 kHz

SWP 5.0 s

CENTER 1.900000 GHz SPAN 2. 000 MHz

No.1: No.2: No.3: No.4: No.5: No.6:

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

∆:

Multi Marker List

***

1.899200 GHz

1.899400 GHz

1.899600 GHz

1.900400 GHz

1.900600 GHz

1.900800 GHz

***

–74.75 dB –74.50 dB –64.75 dB –66.50 dB –74.25 dB –74.75 dB

(IN BAND)

µ

PC8129GR REF 0.0 dBm 10 dB/

ATT 10 dB

1

2

7

6

5

***

–11.71 dBm –24.07 dBm –64.52 dBm –63.37 dBm –61.09 dBm –59.39 dBm –31.62 dBm

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

4

3

CENTER 1.9000 GHz SPAN 600 MHz

Multi Marker List

***

No.1:

1.900 GHz

No.2:

1.650 GHz

No.3:

1.750 GHz

No.4:

1.800 GHz

No.5:

2.000 GHz

No.6:

2.050 GHz

No.7:

2.150 GHz

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

START 0 Hz STOP 2.500 GHz

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

(IN BAND)

µ

PC8129GR REF 0.0 dBm 10 dB/

f

RFout

= 1.71 GHz + f f

LO2in

= 1.46 GHz

I/Qin

ATT 10 dB

1

6

4

2

5

7

3

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

CENTER 1.7950 GHz SPAN 600 MHz

Multi Marker List

No.1: No.2: No.3: No.4: No.5: No.6: No.7:

***

1.710 GHz

1.670 GHz

1.750 GHz

1.920 GHz

1.940 GHz

1.960 GHz

2.000 GHz

***

–15.16 dBm –61.50 dBm –67.84 dBm –46.33 dBm –58.68 dBm –27.94 dBm –62.11 dBm

16

Data Sheet P12781EJ2V0DS00

µµµµ

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

(IN BAND)

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

(IN BAND)

2

5

6

ATT 10 dB

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

CENTER 1.7950 GHz SPAN 600 MHz

PC8129GR REF 0.0 dBm 10 dB/

µ

No.1: No.2: No.3: No.4: No.5: No.6: No.7:

1.795 GHz

1.545 GHz

1.590 GHz

1.750 GHz

1.840 GHz

2.000 GHz

2.045 GHz

–14.21 dBm –24.47 dBm –65.96 dBm –66.40 dBm –60.91 dBm –61.79 dBm –28.73 dBm

***

Multi Marker List

***

f

RFout

= 1.795 GHz

+ f

I/Qin

f

LO2in

= 1.545 GHz

1

2

3

4

5

6

ATT 10 dB

RBW 300 kHz

VBW 300 kHz

SWP 5.0 s

CENTER 1.7950 GHz SPAN 600 MHz

PC8129GR REF 0.0 dBm 10 dB/

µ

No.1: No.2: No.3: No.4: No.5: No.6:

1.880 GHz

1.630 GHz

1.750 GHz

1.760 GHz

2.000 GHz

2.010 GHz

–12.32 dBm –23.47 dBm –64.08 dBm –63.19 dBm –61.05 dBm –60.25 dBm

***

Multi Marker List

***

f

RFout

= 1.88 GHz

+ f

I/Qin

f

LO2in

= 1.63 GHz

1

3 4

7

PC8129GR

Data Sheet P12781EJ2V0DS00

17

STANDARD TYPICAL CHARACTERISTICS <Up-Converter Block>

µµµµ

PC8129GR

TA = +25 °C, VCC = 3.0 V, VPS = 3.0 V, f Test Circuit 1 (f Test Circuit 2 (f

RFout RFout

f

UpConin LO2in

f

0

RFout

f

= 900 MHz, f = 1900 MHz, f

P

RFout

= 250.0/250.2 MHz

= 1.15 GHz

= 899.8/900.0 MHz

–10 –20

P

RFout

–30 –40 –50

- Output Power - dBm

RFout

–60

P

–70

- 3rd Order Intermoduration Distortion - dBm

3

IM

–50

–40 –30 –20 –10 0

P

UPCONin

- Up-Converter Input Level - dBm

LO2in

, IM3, vs P

IM

CG vs P

= 1150 MHz) or

LO2in

UpConin

3

LO2in

UPCONin

= 250 MHz, P

UPCONin

= –20 dBm

= 1650 MHz), Unless Otherwise Specified

f

OIP

3

= +5.8 dBm

- Output Power - dBm

RFout

P

UpConin LO2in

= 1.65 GHz

f

0

RFout

= 1.9000/1.9002 GHz

f

–10 –20 –30 –40 –50 –60 –70

- 3rd Order Intermoduration Distortion - dBm

3

–80

IM

–50

P

UPCONin

P

RFout

, IM3, vs P

= 250.0/250.2 MHz

RFout

P

IM

UpConin

3

OIP = –1.3 dBm

–40 –30 –20 –10 0

- Up-Converter Input Level - dBm

3

15

10

5

f

RFout LO2in

f

CG - Conversion Gain - dB

0

–40 –30 –20 –10 0

P

LO2in

- LO2 Input Level - dBm

f

RFout

= 900 MHz

LO2in

= 1.15 GHz

f

= 1.9 GHz = 1.65 GHz

18

Data Sheet P12781EJ2V0DS00

STANDARD TYPICAL CHARACTERISTICS <Modulator Block>

Test Circuit 1 or 2, TA = +25 °C, VCC = 3 V, VPS = 3 V I/Q DC = 1.5 V (Vbias(I) = Vbias(Ib) = Vbias(Q) = Vbias(Qb) = 1.5 V)

I/Qin

f

= 67.7 kHz, V

Modulation Pattern: All Zero <0000>, f

MODout

f

+10

= f

LO1in

/2 + f

I/Qin

= 500 mV

I/Qin

= 250 MHz + f

P

MODout

P-P

(single ended input, Ib = Qb = 0 mV

vs V

LO1in

= 500 MHz, P

I/Qin

, Unless Otherwise Specified

I/Qin

LO1in

P-P

= –10 dBm

+10

)

P

MODout

vs P

µµµµ

PC8129GR

LO1in

0

–10

–20

–30

- Moduration Output Power - dBm

–40

MODout

P

–50

100 200 500 20001000

V

I/Qin

- I/Q Input Amplitude - mV

P

MODout

, LoL, ImR, IM

0

–10

–20

P

RFout

LoL

3I/Q

vs f

LO1in

P-P

–20

–30

0

–10

–20

–30

- Moduration Output Power - dBm

–40

MODout

P

–50

–40

–30 –20 –10 0

P

LO1in

- LO1 Input Level - dBm

vs V

∆Φ

I/Qin

3

MOD Pattern: PN9

2

–30

ImR

–40

- Moduration Output Power - dBm

–50

MODout

P

IM

3I/Q

100 200 500 2000

f

LO1in

- LO1 Input Frequency - MHz

–40

–50

–60

1000 200

–70

Data Sheet P12781EJ2V0DS00

- I/Q 3rd Order Intermodulation Distortion - dBc

3I/Q

LoL - Local Oscillator Carrier Leakage - dBc

ImR - Image Rejection - dBc

IM

- Phase Error - deg. (rms.)∆Φ

1

100 500 1000 2000

V

I/Qin

- I/Q Input Amplitude - mV

P-P

19

7

MOD Pattern: PN9

6

5

∆

Φ vs f

LO1in

µµµµ

PC8129GR

TYPICAL SINE WAVE MODULATION OUTPUT SPECTRUM

PC8129GR

µ

REF 0.0 dBm 10 dB/

ATT 10 dB

1

4

3

2

∆

Φ - Phase Error - deg. (rms.)

1

0

100

200 500

f

LO1in

- LO1 Input Frequency - MHz

1000 2000

RBW 3 kHz

VBW 10 kHz

SWP 1.0 s

3

2

4

CENTER 250.0000 MHz SPAN 500 kMHz

No.1: No.2: No.3: No.4:

Multi Marker List

***

250.0677 MHz

250.0000 MHz

249.9323 MHz

249.7969 MHz

***

–16.37 dBm –39.49 dBc –31.07 dBc –58.80 dBc

20

Data Sheet P12781EJ2V0DS00

µµµµ

PC8129GR

LO1 INPUT (Pin8) IMPEDANCE

V

CC

= VPS = 3 V

CH1 S11 1 U FS 2: 47.998 Ω 0.8066 Ω 256.76 pH

MARKER 2 500 MHz

2

3

1

START 100.000 000 MHz STOP 1 000.000 000 MHz

500.000 000 MHz

MARKER

1:

200 MHz

2:

500 MHz

3:

800 MHz

Up-Con. INPUT (Pin1) IMPEDANCE

V

CC

= VPS = 3 V

11 1 U FS 2: 101.78 Ω –387.03 Ω 1.6449 pF

CH1 S

MARKER 2 250 MHz

250. 000 000 MHz

MOD OUTPUT (Pin3) IMPEDANCE

VCC = VPS = 3 V

22 1 U FS 2: 31.195 Ω 14.908 Ω 9.4909 nH

CH1 S

MARKER 2 250 MHz

2

3

1

START 50.000 000 MHz STOP 500.000 000 MHz

250.000 000 MHz

MARKER

1: 2: 3:

100 MHz 250 MHz 400 MHz

LO2 INPUT (Pin13) IMPEDANCE

VCC = VPS = 3 V

CH1 S

11 1 U FS 1: 22.379 Ω –93.543 Ω 1.8905 pF

MARKER 1 900 MHz

900.000 000 MHz

2

1

3

MARKER

1:

100 MHz

2:

250 MHz

3:

400 MHz

START 50.000 000 MHz STOP 500.000 000 MHz

RF OUTPUT (Pin18) IMPEDANCE

V

CC

= VPS = 3 V

CH1 S

22 1 U FS 1: 18.953 Ω –158.83 Ω 1.1134 pF

MARKER 1 900 MHz

START 800.000 000 MHz STOP 2 000.000 000 MHz

900.000 000 MHz Connect to inductor

(L between pin18 and pin19

1

2

3

2

= 100 nH)

MARKER

1: 2: 3:

900 MHz 1150 MHz 1900 MHz

3

START 800.000 000 MHz STOP 2 000.000 000 MHz

1

2

MARKER

1:

900 MHz

2:

1150 MHz

3:

1900 MHz

Data Sheet P12781EJ2V0DS00

21

µµµµ

PC8129GR

TEST CIRCUIT 1 (In the case of f

100 pF

1000 pF

(Open)

I(DC), V

Ib(DC)

Qb(DC)

Q(DC), V

LO1in

Notes 1.

100 pF

Iin

10 nF

Qin

100 pF

50 Ω matching circuit at f

In the case of using NEC’s evaluation board. 50 Ω matching circuit at f

2.

In the case of using NEC’s evaluation board.

RFout

= 900 MHz Band)

1

Up-Con. in

2

Up-Con. inb

3

MODout

4

I

5

Ib

6

Qb

7

Q

8

LO1in

9

LO1inb

10

GND

LO2in

= 1150 MHz.

RFout

= 900 MHz.

VCC(MOD.)

V

CC

(UP-CON.)

RFout

GND

V

AGC

GND

LO2in

LO2inb

GND

V

CC

84 nH

10 nF

V

f

RFout

CC

20

19

1000 pF

ZL = 50 Ω

18

15 nH

6 pF

17

RPS = 1 kΩ

PS

16

R

AGC

= 10 kΩ

15

14

Note 1

ZL = 50 Ω

Note 2

10 nF

100 pF

10 nF

Vps

V

AGC

LO2in

13

6.8 nH

4 pF

100 pF

12

100 pF

11

22

Data Sheet P12781EJ2V0DS00

µµµµ

PC8129GR

TEST CIRCUIT 2 (In the case of f

100 pF

1000 pF

(Open)

10

I(DC), V

Ib(DC)

Qb(DC)

Q(DC), V

LO1in

Notes 1.

100 pF

Iin

10 nF

Qin

100 pF

50 Ω matching circuit at f In the case of using NEC’s evaluation board. 50 Ω matching circuit at f

2.

In the case of using NEC’s evaluation board.

RFout

= 1900 MHz Band)

1

Up-Con. in

2

Up-Con. inb

3

MODout

4

I

5

Ib

6

Qb

7

Q

8

LO1in

9

LO1inb

GND

LO2in

= 1650 MHz.

RFout

= 1900 MHz.

VCC(MOD.)

CC

(UP-CON.)

V

RFout

GND

V

AGC

GND

LO2in

LO2inb

GND

V

CC

68 nH

Note 2

10 nF

100 pF

10 nF

100 pF

V

CC

f

RFout

Vps

V

AGC

LO2in

20

19

18

17

16

PS

15

14

13

12

11

1000 pF

ZL = 50 Ω

3 pF

RPS = 1 kΩ

R

ZL = 50 Ω

2 pF

100 pF

AGC

= 10 kΩ

Note 1

Data Sheet P12781EJ2V0DS00

23

EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD

)

I/Qin

= 250 MHz + f

MODout

(f

= 900 MHz

= 1150 MHz

LO2in

RFout

f

= 500 MHz

LO1in

f

C = 10 nF

µµµµ

PC8129GR

AGC

V

PS

V

CC

V

C = 10 nF C = 10 nF C = 10 nF

C = 100 pF

C = 4 pF

AGC

R

= 10 kΩ

= 1 kΩ

PS

R

C = 100 pF

C = 6 pF

L =

84 nH

L = 6.8 nH

L = 15 nH

C = 1000 pF

C = 100 pF

C = 1000 pF

C = 100 pF

C = 10 nF C = 10 nF

C = 10 nF

Ib Qb

Notes 1.

Double-sided patterning with 35

GND pattern on backside.

2.

Solder coating over patterns.

3.

4. ,

indicate through-holes.

m thick copper on 50 × 50 × 0.4 mm polyimide board.

µ

NOTICE The test circuits and board pattern on data sheet are for performance evaluation use only. In the

case of actual design-in, matching circuit should be determined using S-parameter of desired frequency in accordance to actual mounting pattern.

24

Data Sheet P12781EJ2V0DS00

EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD

)

I/Qin

= 250 MHz + f

MODout

(f

= 1.9 GHz + f

= 1.65 GHz

LO2in

RFout

f

= 500 MHz

LO1in

f

µµµµ

PC8129GR

C = 10 nF

AGC

V

PS

V

CC

V

C = 10 nF C = 10 nF C = 10 nF

C = 100 pF

AGC

R

= 1 kΩ

PS

R

C = 3 pF

C = 100 pF

C = 2 pF

= 10 kΩ

L = 68 nH

C =

1000 pF

C = 100 pF

C = 1000 pF

C = 100 pF

C = 1000 pF C = 1000 pF

C = 10 nF

Ib Qb

Notes 1.

Double-sided patterning with 35 GND pattern on backside.

2.

Solder coating over patterns.

3.

4. ,

indicate through-holes.

m thick copper on polyimide board.

µ

NOTICE The test circuits and board pattern on data sheet are for performance evaluation use only. In the

case of actual design-in, matching circuit should be determined using S-parameter of desired frequency in accordance to actual mounting pattern.

Data Sheet P12781EJ2V0DS00

25

PACKAGE DIMENSIONS

20 PIN PLASTIC SSOP (225 mil) (UNIT: mm)

µµµµ

PC8129GR

20

110

6.7 ± 0.3

1.8 MAX.

1.5 ± 0.1

11

detail of lead end

3˚

6.4 ± 0.2

4.4 ± 0.1

+7˚ –3˚

1.0 ± 0.2

NOTE

0.5 ± 0.2

0.15

+0.10 –0.05

0.1 ± 0.1

0.65

0.22

+0.10 –0.05

0.10

0.15

M

0.575 MAX.

Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition.

26

Data Sheet P12781EJ2V0DS00

µµµµ

PC8129GR

NOTE ON CORRECT USE

(1) Observe precautions for handling because of electrostatic sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (e.x. 1000 pF) to the VCC pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered in the following recommended conditions. Other soldering method and

conditions than the recommended conditions are to be consulted with sales representatives.

PC8129GR

µµµµ

Soldering process Soldering conditions Symbol

Infrared ray reflow Peak package’s surface temperat ure: 235 °C or below,

Reflow time: 30 seconds or bel ow (210 °C or higher) Number of reflow process: 2, Exposure limit

VPS Peak package’s surface temperature: 215 °C or below,

Reflow time: 40 seconds or bel ow (200 °C or higher) Number of reflow process: 2, Exposure limit

Wave soldering Solder temperature: 260 °C or below,

Flow time: 10 seconds or below, Number of flow process: 1, Exposure limit

Partial heating method Terminal temperature: 300 °C or bel ow,

Flow time: 3 seconds/pi n or bel ow, Exposure limit

Exposure limit before soldering after dry-pack package is opened.

Note

: None

Note

: None

Storage conditions: 25 °C and relative humidity at 65 % or less.

Caution Apply only a single process at once, except for “Partial heating method”.

For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

IR35-00-2

VP15-00-2

WS60-00-1

Data Sheet P12781EJ2V0DS00

27

µµµµ

PC8129GR

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• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.

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• NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.

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