The PPC8128TA,
amplifiers for cellular / cordless telephones. These amplifiers can realize low current consumption with external chip
inductor (example: 1005 size) which can not be realized on internal 50 : wideband matched IC. These low current
amplifiers operate on 3.0 V.
These ICs are manufactured using NEC’s 20 GHz fT NESAT™ III silicon bipolar process. This process uses
silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution
and prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
PC8151TA and PPC8152TA are silicon monolithic integrated circuits designed as buffer
P
PPPP
PC8151TA,
PPPP
PC8152TA
FEATURES
• Low current consumption: PPC8128TA; ICC = 2.8 mA TYP. @ VCC = 3.0 V
PPC8151TA; ICC = 4.2 mA TYP. @ VCC = 3.0 V
PPC8152TA; ICC = 5.6 mA TYP. @ VCC = 3.0 V
• Supply voltage: VCC = 2.4 to 3.3 V
• High efficiency: PPC8128TA; P
PPC8151TA; P
PPC8152TA; P
• Power gain variation: PPC8128TA, 8151TA ; GP = 12.5 dB TYP. @ f = 1 GHz
PPC8152TA; GP = 23.0 dB TYP. @ f = 1 GHz
• Operating frequency: 100 to 1 900 MHz (Output port LC matching)
• Excellent isolation: PPC8128TA; ISL = 39 dB TYP. @ f = 1 GHz
: PPC8151TA; ISL = 38 dB TYP. @ f = 1 GHz
: PPC8152TA; ISL = 40 dB TYP. @ f = 1 GHz
APPLICATION
• Buffer Amplifiers on 800 to 1 900 MHz cellular / cordless telephones
O (1 dB)
= ð4.0 dBm TYP. @ f = 1 GHz
O (1 dB)
= +2.5 dBm TYP. @ f = 1 GHz
O (1 dB)
= ð4.5 dBm TYP. @ f = 1 GHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14637EJ1V0DS00 (1st edition)
Date Published April 2000 N CP(K)
Printed in Japan
Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
out
= 3.0 V, ZS = ZL = 50
1.66 GHz output port
matching frequency
G
(dB)
P
ISL
(dB)
O (1 dB)
P
(dB)
4.01337
ð
8.517.535
ð
)
::::
1.90 GHz output port
matching frequency
G
(dB)
P
ISL
(dB)
O (1 dB)
P
(dB)
4.06-pin minimoldC2P
ð
8.56-pin minimoldC2V
ð
Package
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
Low Noise Tr.
RX
DEMOD.
I
Q
Marking
SW
TX
PA
÷NPLL
PLL
I
0°
φ
90°
Q
These ICs can be added to your system around ▲ parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
Preliminary Data Sheet P14637EJ1V0DS00
3
Page 4
PIN EXPLANATION
PPPP
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA
Pin
No.
Pin
Name
1INPUT
2
GND0
3
5
4OUTPUTvoltage
Applied
Voltage
(V)
as same
as V
through
external
inductor
Pin
Voltage
Note
(V)
ð
CC
0.9
1.06
0.80
ð
ð
Function and ApplicationsInternal Equivalent Circ ui t
PC8128TA, PC8151TA
Signal input pin. A internal
matching circuit, configured with
resistors, enables 50 : connection over a wide band. This pin
must be coupled to signal source
with capacitor for DC c ut.
Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be c onnected together with wide ground
pattern to decrease impedance
defference.
Signal output pin. This pin i s designed as collector output. Due
to the high impedance output,
this pin should be externall y
equipped with LC matching
circuit to next s tage. For L, a
size 1005 chip in-ductor c an be
chosen.
µµ
64
1
2
53
PC8152TA
µ
1
↓
↓
6
4
6VCC2.4 to 3.3
Pin voltage is measured at V
Note
ð
Power supply pin. This pin
should be externally equipped
with bypass capacit or to
minimize its inpedanc e.
CC
= 3.0 V. Above: PPC8128TA, Center: PPC8151TA, Below: PPC8152TA
23
5
4
Preliminary Data Sheet P14637EJ1V0DS00
Page 5
ABSOLUTE MAXIMUM RATINGS
ParameterSymbolConditionsRatingsUnit
PPPP
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA
Supply VoltageV
Total Circuit CurrentI
Total Power Dissipat i onP
1.00 GHz output port matchi ng1.66 GHz output port matching1.90 GHz output port matching
C1, C3 to C71 000 pF1 000 pF1 000 pF
C21.5 pF1.0 pF1.5 pF
L18.2 nH2.7 nH1.8 nH
NOTES (
1. 42 u 35 u 0.4 mm double sided copper clad polyimide board.
2. Back side: GND pattern
3. Solder plated on pattern
4.: Through holes
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA in common)
PPPP
Preliminary Data Sheet P14637EJ1V0DS00
9
Page 10
PPPP
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA
EXAMPLE OF APPLICATION CIRCUIT (
PC8128TA,
PPPP
PC8151TA)
PPPP
In improving RLin of PPC8128TA and PPC8151TA at 1.0 GHz, L2 should be attached.
V
CC
C
3
6
1
50 ΩC
INOUT
L2C
1
2,3,5
L1
4
Output port maching circuit
50 Ω
2
In improving RLin of PPC8128TA and PPC8151TA at 1.66 to 1.9 GHz, C’ should be attached.
V
CC
C
3
6
50 ΩC
INOUT
1
1
L1
4
Output port matching circuit
50 Ω
2
C
C'
2,3,5
10
Preliminary Data Sheet P14637EJ1V0DS00
Page 11
PACKAGE DIMENSIONS
6 PIN MINIMOLD (UNIT: mm)
+0.2
–0.3
2.8
+0.2
123
–0.1
1.5
PPPP
PC8128TA,
+0.1
0.3
–0.05
PPPP
PC8151TA,
0.13±0.1
0 to 0.1
PPPP
PC8152TA
65
0.950.95
1.9
2.9±0.2
4
1.1
0.8
+0.2
–0.1
Preliminary Data Sheet P14637EJ1V0DS00
11
Page 12
PPPP
PC8128TA,
PPPP
PC8151TA,
PPPP
PC8152TA
NOTES ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C2) values
should be adjusted for applied frequency to match impedance to next stage.
(5) The DC capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering MethodSoldering ConditionsRecommended Condition Sy m bol
Infrared ReflowPackage peak t emperature: 235 °C or below
Time: 30 seconds or less (at 210 °C)
Count: 3, Exposure limi t: None
VPSPackage peak temperature: 215 ° C or bel ow
Time: 40 seconds or less (at 200 °C)
Count: 3, Exposure limi t: None
Wave SolderingSoldering bath temperature: 260 °C or below
Time: 10 seconds or less
Count: 1, Exposure limi t: None
Partial HeatingPin temperature: 300 °C
Time: 3 seconds or less (per side of device)
Exposure limit: None
After opening the dry pack, keep it in a place below 25 °C and 65 % RH for the allowable storage period.
Note
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
PC8151TA,
PC8152TA
M7 98. 8
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