Page 1
DATA SHEET
BIPOLAR ANALOG INTEGRATED CI RCUITS
µµµµ
PC8106TB,
µµµµ
PC8109TB
SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONES
DESCRIPTION
The µPC8106TB and µPC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for
cellular/cordless telephone transmitter stage. The µPC8106TB features improved intermodulation and µPC8109TB
features low current consumption. From these two version, you can chose either IC corresponding to your system
design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your
system size.
The µPC8106TB and µPC8109TB are manufactured using NEC’s 20 GHz fT NESATTMIII silicon bipolar process.
This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface
from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and
reliability.
FEATURES
• Recommended operating frequency : f
• Supply voltage : VCC = 2.7 to 5.5 V
• High-density surface mounting : 6-pin super minimold package
• Low current consumption : ICC = 9 mA TYP. @ µPC8106TB
• Minimized carrier leakage : Due to double balanced mixer
• Built-in power save function
RFout
= 0.4 GHz to 2.0 GHz, f
ICC = 5 mA TYP. @ µPC8109TB
IFin
= 100 MHz to 400 MHz
APPLICATION
• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)
ORDERING INFORMATION
Part Number Markings Product Type Package Supplying Form
µ
PC8106TB-E3 C2D High IP
µ
PC8109TB-E3 C2G Low current consumption
Remark
Document No. P12770EJ2V0DS00 (2nd edition)
Date Published April 1999 N CP(K)
Printed in Japan
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
3
PC8106TB, µPC8109TB)
µ
Caution Electro-static sensitive devices
6-pin super
minimold
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perf oration side.
QTY 3 kp/Reel.
1997, 1999©
Page 2
PIN CONNECTIONS
3
2
1
4
5
6
(Top view)
Marking is an example of PC8106TB.
4
5
6
3
2
1
(Bottom view)
C 2 D
µ
µµµµ
PC8106TB,
Pin No. Pin Name
1 IFinput
2GND
3 LOinput
4PS
5V
6 RFoutput
CC
µµµµ
PC8109TB
SERIES PRODUCTS (TA = +25
TYPE PRODUCT NAME VCC (V)
3
High IP
Low power consumption
Higher IP
3
PC8106TB 2.7 to 5.5 9 9 7
µ
PC8109TB 2.7 to 5.5 5 6 4
µ
PC8163TB 2.7 to 3. 3 16.5 9 5.5 0.5 –2 +9.5 +6
µ
C, VCC = VPS = V
°°°°
RFout
= 3.0 V, ZL = ZS = 50
CC
I
(mA)
CG1
(dB)
CG2
(dB)
)
ΩΩΩΩ
O(sat)
P
(dBm)
2
−
5.5
−
O(sat)
1
P
2
(dBm)
4 +5.5 +2.0
−
7.5 +1.5
−
OIP31
(dBm)
Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTER-
ISTICS for the test conditions.
BLOCK DIAGRAM (FOR THE
PC8106TB AND
µµµµ
LO input
GND
IF input
µµµµ
(Top view)
PC8109TB)
PS
CC
V
RF output
OIP32
(dBm)
1.0
−
2
Data Sheet P12770EJ2V0DS00
Page 3
µµµµ
PC8106TB,
µµµµ
PC8109TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS)
PHS, DECT
RX
SW
TX
PA
Analog cellular telephone
RX
SW
VCO
PC8106TB
µ
VCO
÷N PLL
÷N PLL
0°
Phase
shifter
90°
DEMO.
PLL
FM
DEMO.
I
Q
I
Q
TX
PA
PC8109TB
µ
PLL
MOD.
Data Sheet P12770EJ2V0DS00
3
Page 4
µµµµ
PC8106TB,
µµµµ
PC8109TB
PIN FUNCTIONS (FOR THE
Pin
No.
Pin
Name
1 IFinput
2GND 0
3 LOinput
5VCC2.7 to 5.5
6 RFoutput Same bias
4PSVCC/GND
Applied
Voltage
(V)
−
−
CC
as V
through
external
inductor
Pin
Voltage
(V)
1.3 This pin is IF input to double bal anc ed
−
2.4 Local input pin. Recommendable input
−
−
−
PC8106TB AND
µµµµ
Note
Function and Explanation Equivalent Circuit
mixer (DBM). The input is des i gned as
high impedance. The circuit contributes to suppress spurious signal.
Also this symmetrical circuit c an keep
specified performance insensitive to
process-condition distribution. For
above reason, double balanced mixer
is adopted.
GND pin. Ground pattern on the board
should be formed as wide as poss i bl e.
Track Length should be kept as short
as possible to minimi ze ground
impedance.
level is −10 to 0 dBm.
Supply voltage pin.
This pin is RF output from DB M . This
pin is designed as open collec tor. Due
to the high impedance output, this pin
should be externally equipped wit h LC
matching circuit t o next stage.
Power save control pin. B i as controls
operation as follows.
PC8109TB)
µµµµ
5
6
3
1
2
VCC
5
Each pin voltage is measured with V
Note
Pin bias Cont rol
CC
V
GND Power Save
CC
= V
PS
= V
Operation
RFout
= 3.0 V.
GND
4
2
4
Data Sheet P12770EJ2V0DS00
Page 5
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Rating Unit
µµµµ
PC8106TB,
µµµµ
PC8109TB
Supply Votage V
PS pin Input Voltage V
Power Dissipation of
Package
Operating Ambient Temperature T
Storage Temperature T
Maximum Input Power P
CC
PS
P
TA = +25 °C, Pin 5 and 6 6.0 V
TA = +25 °C 6.0 V
D
Mounted on double-sided copper-clad 50 × 50
1.6 mm epoxy glass P WB
A
T
= +85 °C
A
stg
in
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol MIN. TYP. MAX. Unit Note
Supply Voltage V
Operating Ambient Temperature T
Local Input Level P
RF Output Frequency f
IF Input Frequency f
CC
LOin
RFout
IFin
2.7 3.0 5.5 V The same voltage should be supplied t o
A
40 +25 +85 °C
−
10
−
0.4
100
×
pin 5 and 6
S
50dBmZ
−
−
−
2.0 GHz With external m atching circuit
400 MHz
= 50 Ω (without matching)
200 mW
40 to +85 °C
−
55 to +150 °C
−
+10 dBm
ELECTRICAL CHARACTERISTICS
A
= +25 °C, VCC = V
(T
RFout
= 3.0 V, f
specified)
Parameter Symbol Conditions
Circuit Current I
Circuit Current in Power-
save Mode
Conversion Gain 1 CG1 f
Conversion Gain 2 CG2 f
Maximum RF Output Power 1 P
Maximum RF Output Power 2 P
CC
ICC(PS) VPS = 0 V
O(sat)
1f
O(sat)
2f
IFin
= 240 MHz, P
LOin
=
5 dBm, and VPS
−−−−
PC8106TB
µ
2.7 V unless otherwise
≥≥≥≥
PC8109TB
µ
Unit
MIN. TYP. MAX. MIN. TYP. MAX.
No signal 4.5 9 13.5 2.5 5 8.0 mA
RFout
= 0.9 GHz, P
RFout
= 1.9 GHz, P
RFout
= 0.9 GHz, P
RFout
= 1.9 GHz, P
−−
IFin
= −30 dBm 6 9 12 3 6 9 dB
IFin
= −30 dBm 4 7 10 1 4 7 dB
IFin
= 0 dBm
IFin
= 0 dBm
4
−
6.5
−
10
2
−
4
−
−−
7.5−5.5
−−
−−10−
7.5
10
µ
dBm
−
dBm
−
A
Data Sheet P12770EJ2V0DS00
5
Page 6
OTHER CHARACTERISTICS, FOR REFERENCE PURPOSES ONLY
A
= +25 °C, VCC = V
(T
RFout
= 3.0 V, P
LOin
=
5 dBm, and VPS
−−−−
2.7 V unless otherwise mentioned)
≥≥≥≥
µµµµ
PC8106TB,
µµµµ
PC8109TB
Parameter Symbol Conditions
OIP31f
Intercept Point
Third-Order Intermodulation
Distortion 1
Third-Order Intermodulation
Distortion 2
SSB Noise Figure SSBNF f
Rise time T
Response Time
Fall time T
3
2f
OIP
IM31f
IM32
PS(rise)
PS(fall)
Reference Value
PC8106TBµPC8109TB
µ
IFin1
= 240.0 MHz f
IFin2
= 240.4 MHz f
IFint
= 240.0 MHz
f
IFin2
= 240.4 MHz
f
IFin
= −20 dBm
P
RFout
= 0.9 GHz, f
VPS: GND → V
VPS: VCC → GND 2.0 2.0
RFout
= 0.9 GHz +5.5 +1.5 dBmOutput Third-Order Distortion
RFout
= 1.9 GHz +2.0
RFout
= 0.9 GHz
RFout
f
= 1.9 GHz
IFin
= 240 MHz 8.5 8.5 dB
CC
31
−
30
−
2.0 2.0
1.0
−
−
−
29 dBc
28 dBc
Unit
µ
µ
APPLICATION CIRCUIT EXAMPLE CHARACTERSISTICS FOR REFERENCE PURPOSE ONLY
A
= +25 °C, VCC = VPS = V
(T
Parameter Symbol Conditions
Conversion Gain CG f
Maximum RF Output Power P
RFout
= 3.0 V, f
O(sat)
IFin
= 130 MHz, f
RFout
= 1.5 GHz, with applicati on circuit
example
RFout
f
= 1.5 GHz, with applicati on circuit
example
LOin
= 1630 MHz, P
LOin
=
5 dBm)
−−−−
Reference Value
PC8106TB
µ
7dB
3.5 dBm
−
Unit
sPower Save
s
6
Data Sheet P12770EJ2V0DS00
Page 7
µµµµ
PC8106TB,
µµµµ
PC8109TB
TEST CIRCUIT 1 (RF = 900 MHz, for the
RF = 900 MHz, matched
Spectrum Analyzer
50 Ω
10 000
pF
V
CC
C
4
1000 pF 1 pF
C
5
C
6
C
3
1 000 pF
PC8106TB and
µµµµ
6
L
6.8 nH
*
RFoutputPSIFinput
5
CC
V
4
PC8109TB)
µµµµ
GND
LOinput
Signal Generator
100 pF
1
C
2
3
1
100 pF
C
2
50 Ω
Signal Generator
50 Ω
P
Loin
= –5 dBm
* In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching
circuit.
EXAMPLE OF TEST CIRCUIT 1 ASSEMBLED ON EVALUATION BOARD
RF Connector →
RFOUT
1 000 pF
C
6
C
3
1 000 pF
6.8 nH
1 pF
L
5
C
1
IFIN
100 pF
C
1
P/S
1 000 pF
PC8106TB
µ
C
4
10 000 pF
LO
100 pF
C
2
IN
Data Sheet P12770EJ2V0DS00
7
Page 8
COMPONENT LIST
Form Symbol Value
Chip capacitor
Through capacitor C
Chip inductor L
6.8 nH: Murata Mfg. Co., Ltd. LQP31A6N8J04
Note
Notes on the board
35 × 42 × 0.4 mm polyimide board, 35
1.
Ground pattern on rear of the board
2.
Solder plated patterns
3.
4.
5.
: Through holes
C6 is for RF short on the board pattern
C1, C
C3, C
C
µµµµ
PC8106TB,
2
6
5
4
100 pF
1 000 pF
1 pF
10 000 pF
Note
6.8 nH
m double-sided copper clad
µ
µµµµ
PC8109TB
8
Data Sheet P12770EJ2V0DS00
Page 9
µµµµ
PC8106TB,
µµµµ
PC8109TB
TEST CIRCUIT 2 (RF = 1.9 GHz, for the
RF = 1.9 GHz, matched
Spectrum Analyzer
50 Ω
10000
pF
V
CC
C
4
1000 pF
C
6
C
3
1 000 pF
Strip line
2.5 pF
5
C
PC8106TB and
µµµµ
6
L
100 nH
*
RFoutputPSIFinput
5
CC
V
4
PC8109TB)
µµµµ
1
2
GND
LOinput
3
100 pF
C
1
100 pF
C
2
Signal Generator
50 Ω
Signal Generator
50 Ω
P
Loin
= –5 dBm
* In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching
circuit.
EXAMPLE OF TEST CIRCUIT 2 ASSEMBLED ON EVALUATION BOARD
RF
RF Connector →
1 000 pF
C
6
C
2 pF
3
OUT
1 000 pF
C
5
0.5 pF
100 nH
1
IF
IN
100 pF
C
1
P/S
1 000 pF
PC8106TB
µ
C
4
10 000 pF
LO
100 pF
C
2
IN
Data Sheet P12770EJ2V0DS00
9
Page 10
COMPONENT LIST
Form Symbol Value
Chip capacitor
Through capacitor C
Chip inductor L
100 nH: Murata Mfg. Co., Ltd. LQN1AR10J(K)04
Note
Notes on the board
35 × 42 × 0.4 mm polyimide board, 35
1.
Ground pattern on rear of the board
2.
Solder plated patterns
3.
4.
: Through holes
C1, C
C3, C
C
µµµµ
PC8106TB,
2
6
5
4
2.5 pF (2.0 pF, 0.5 pF parallel)
100 pF
1 000 pF
10 000 pF
Note
100 nH
m double-sided copper clad
µ
µµµµ
PC8109TB
10
Data Sheet P12770EJ2V0DS00
Page 11
µµµµ
PC8106TB,
µµµµ
PC8109TB
APPLICATION CIRCUIT EXAMPLE (RF = 1.5 GHz, for the
RF = 1.5 GHz, matched
Spectrum Analyzer
50 Ω
10000
pF
V
CC
6 pF
C
4
C
6
C
1 000 pF
2.7 nH
3.5 pF
3
L
2
6
L
150 nH
5
C
*
RFoutputPSIFinput
1
5
V
4
CC
PC8106TB and
µµµµ
1
2
GND
LOinput
3
100 pF
C
1
100 pF
C
2
PC8109TB)
µµµµ
Signal Generator
50 Ω
Signal Generator
50 Ω
P
Loin
= –5 dBm
* In case of unstable operation, please connect capacitor 100 pF between 4 pin and 5 pin and adjust the matching
circuit.
EXAMPLE OF APPLICATION CIRCUIT ASSEMBLED ON EVALUATION BOARD
RF
RF Connector →
OUT
C
5
L
150 nH
2
2.7 nH
L
1
1
3 pF
6 pF
C
6
C
3
0.5 pF
1 000 pF
IF
IN
100 pF
C
1
P/S
1 000 pF
PC8106TB
µ
C
4
10 000 pF
LO
100 pF
C
2
IN
Data Sheet P12770EJ2V0DS00
11
Page 12
COMPONENT LIST
Form Symbol Value
Chip capacitor
Through capacitor C
Chip inductor
C1, C
C
C
C
L
L
µµµµ
PC8106TB,
2
3
5
6
4
1
2
3.5 pF (3.0 pF, 0.5 pF parallel)
100 pF
1 000 pF
6 pF
10 000 pF
Note 1
150 nH
Note 2
2.7 nH
µµµµ
PC8109TB
Notes 1.
150 nH: TOKO Co., Ltd. LL2012-FR15
2.7 nH : TOKO Co., Ltd. LL2012-F2N7S
2.
Notes on the board
35 × 42 × 0.4 mm polyimide board, 35
1.
Ground pattern on rear of the board
2.
Solder plated patterns
3.
4.
: Through holes
m double-sided copper clad
µ
NOTICE
The test circuits and board pattern on data sheet are for performance evaluation use only. (They are not
recommended circuits.) In the case of actual design-in, matching circuit should be determined using S parameter of
desired frequency in accordance to actual mounting pattern.
For external circuits of the ICs, following Application Note is also available.
• µPC8106, µPC8109 Application Note (Document No. P13683E)
12
Data Sheet P12770EJ2V0DS00
Page 13
µµµµ
PC8106TB,
µµµµ
PC8109TB
TYPICAL CHARACTERISTICS (TA = +25°C, VCC = V
the operating frequency, unless otherwise specified
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
( PC8106TB)
µ
14
12
10
8
6
4
Circuit Current ICC (mA)
2
12
10
0
0
8
6
4
24316587
Supply Voltage V
CIRCUIT CURRENT vs. PS PIN INPUT
VOLTAGE ( PC8106TB)
µ
VCC = 5.5 V
CC = 3.0 V
V
CC (V)
No signal
CC = VPS
V
RFout
) with TEST CIRCUIT 1 or 2, according to
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
( PC8109TB)
µ
10
8
6
4
Circuit Current ICC (mA)
2
0
0
10
8
6
4
24316587
Supply Voltage VCC (V)
CIRCUIT CURRENT vs. PS PIN INPUT
VOLTAGE ( PC8109TB)
µ
VCC = 5.5 V
CC = 3.0 V
V
No signal
V
CC = VPS
Circuit Current ICC (mA)
2
0
0
PS Pin Input Voltage V
CIRCUIT CURRENT vs. OPERATING AMBIENT
TEMPERATURE ( PC8106TB)
16
14
12
10
8
6
4
Circuit Current ICC (mA)
2
0
–60
Operating Ambient Temperature T
321546
PS (V)
µ
VCC = VPS = 3.0 V
No signal
0–20–40
40
20 1008060
A (˚C)
2
Circuit Current ICC (mA)
0
0
PS Pin Input Voltage VPS (V)
CIRCUIT CURRENT vs. OPERATING AMBIENT
TEMPERATURE ( PC8109TB)
10
8
6
4
2
Circuit Current ICC (mA)
0
–60
Operating Ambient Temperature T
321546
µ
VCC = VPS = 3.0 V
No signal
0–20–40
40
20 1008060
A (˚C)
Data Sheet P12770EJ2V0DS00
13
Page 14
µµµµ
PC8106TB,
µµµµ
PC8109TB
S-PARAMETERS FOR EACH PORT (VCC = VPS = V
common – (THE parameters are monitored at DUT pins.)
LO port
MARKER 1
1.15 GHz
MARKER 2
1.65 GHz
START 0.4 GHz START 0.4 GHzSTOP 1.9 GHz STOP 1.9 GHz
S11 Z
REF 1.0 Units
2 200.0 mUnits/
21.201 Ω –53.748 Ω
hp
2
RF port
MARKER 1
900 MHz
MARKER 2
1.9 GHz
1
RFout
= 3.0 V) –
PC8106TB,
µµµµ
S22 Z
REF 1.0 Units
2 200.0 mUnits/
26.961 Ω –87.312 Ω
hp
2
PC8109TB in
µµµµ
1
IF port
MARKER 1
240 MHz
START 0.1 GHz STOP 0.4 GHz
S11 Z
REF 1.0 Units
1 200.0 mUnits/
194.16 Ω –579.53 Ω
hp
1
14
Data Sheet P12770EJ2V0DS00
Page 15
µµµµ
PC8106TB,
µµµµ
PC8109TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = V
and 2 (
PC8106TB,
µµµµ
900 MHz (LC-matched) in test circuit 1
22
S
REF 0.0 dB
1 10.0 dB/
–19.567 dB
hp
MARKER 1
900 MHz
1
START 100 MHz STOP 3 000 MHz START 100 MHz STOP 3 000 MHz
S
22
REF 1.0 Units
1 200.0 mUnits/
36.59 Ω 2.9355 Ω
hp
PC8109TB in common) – (S22 data are monitored at RF connector on board.)
µµµµ
log MAG
1.9 GHz (matched) in test circuit 2
S
REF 0.0 dB
1 10.0 dB/
–15.213 dB
hp
1
S
REF 1.0 Units
1 200.0 mUnits/
58.191 Ω –4.1191 Ω
= 3.0 V) – with TEST CIRCUITS 1
RFout
22
MARKER 1
1.9 GHz
22
hp
log MAG
1
MARKER 1
900 MHz
1
START 100 MHz START 100 MHzSTOP 3 000 MHz STOP 3 000 MHz
1
MARKER 1
1.9 GHz
Data Sheet P12770EJ2V0DS00
15
Page 16
µµµµ
PC8106TB,
µµµµ
PC8109TB
S-PARAMETERS FOR MATCHED RF OUTPUT (VCC = VPS = V
22
circuit example – (S
data are monitored at RF connector on board.)
1.5 GHz (matched) in application circuit example
22
S
REF 0.0 dB
1 10.0 dB/
–20.901 dB
hp
C
MARKER 1
1.5 GHz
D
START 1.0 GHz STOP 2.0 GHz
S22 Z
REF 1.0 Units
1 200.0 mUnits/
59.086 Ω –3.873 Ω
hp
C
log MAG
1
RFout
= 3.0 V) – with application
D
START 1.0 GHz STOP 2.0 GHz
MARKER 1
1.5 GHz
1
16
Data Sheet P12770EJ2V0DS00
Page 17
µµµµ
PC8106TB,
µµµµ
PC8109TB
CONVERSION GAIN vs. SUPPLY VOLTAGE
( PC8106TB)
µ
12
11
10
f
RFout
= 900 MHz
9
8
7
RFout
f
= 1.9 GHz
6
Conversion Gain CG (dB)
5
V
4
2
345 6
CC
Supply Voltage V
(V)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
µ
( PC8106TB)
15
f
RFout
= 900 MHz
LOin
= 1140 MHz
f
CC
= VPS = 3.0 V
V
12
CC
= V
CONVERSION GAIN vs. SUPPLY VOLTAGE
( PC8109TB)
µ
10
8
f
RFout
= 900 MHz
6
4
RFout
= 1.9 GHz
f
2
Conversion Gain CG (dB)
V
CC
= V
PS
0
2
345 6
CC
Supply Voltage V
(V)
PS
CONVERSION GAIN vs. LOCAL INPUT LEVEL
µ
( PC8109TB)
15
f
RFout
= 900 MHz
LOin
= 1140 MHz
f
CC
= VPS = 3.0 V
V
12
9
6
3
Conversion Gain CG (dB)
0
–25
–15
Local Input Level P
–10
–5 0 5 10 15–20
LOin
(dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
µ
( PC8106TB)
15
f
RFout
= 1.9 GHz
f
LOin
= 1.66 GHz
CC
= VPS = 3.0 V
V
10
5
0
–5
Conversion Gain CG (dB)
9
6
3
Conversion Gain CG (dB)
0
–25
–15
Local Input Level P
–10
–5 0 5 10 15–20
LOin
(dBm)
CONVERSION GAIN vs. LOCAL INPUT LEVEL
µ
( PC8109TB)
15
f
RFout
= 1.9 GHz
f
LOin
= 1.66 GHz
CC
= VPS = 3.0 V
V
10
5
0
–5
Conversion Gain CG (dB)
–10
–25
–5 0 5 10 15–20 –15 –10
Local Input Level P
LOin
(dBm)
–10
Data Sheet P12770EJ2V0DS00
–25
–5 0 5 10 15–20 –15 –10
Local Input Level P
LOin
(dBm)
17
Page 18
µµµµ
PC8106TB,
µµµµ
PC8109TB
RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL
( PC8106TB)
µ
10
3 (dBm)
0
–10
Pout
–20
–30
–40
–50
–60
–70
–80
–40
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM
IM3
–30
–20
–10 100
IF Input Level PIFin (dBm)
fRFout = 900 MHz
lFin1 = 240 MHz
f
lFin2 =
240.4 MHz
f
fLOin = 1440 MHz
LOin = –5 dBm
P
CC = VPS = 3.0 V
V
RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL
( PC8106TB)
µ
10
3 (dBm)
0
–10
Pout
–20
–30
–40
–50
–60
–70
–80
–40
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM
IM3
–30
–20
–10 100
IF Input Level PIFin (dBm)
fRFout = 1.9 GHz
lFin1 = 240 MHz
f
lFin2 =
240.4 MHz
f
fLOin = 1660 MHz
LOin = –5 dBm
P
CC = VPS = 3.0 V
V
RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL
( PC8109TB)
µ
10
3 (dBm)
0
–10
–20
Pout
–30
–40
–50
IM3
–60
–70
–80
–40
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM
–30
–20
IF Input Level P
fRFout = 900 MHz
lFin1 = 240 MHz
f
lFin2 =
240.4 MHz
f
fLOin = 1440 MHz
LOin = –5 dBm
P
CC = VPS = 3.0 V
V
–10 100
IFin (dBm)
RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL
( PC8109TB)
µ
10
3 (dBm)
0
–10
–20
Pout
–30
–40
–50
IM3
–60
–70
–80
–40
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM
–30
–20
IF Input Level P
fRFout = 1.9 GHz
lFin1 = 240 MHz
f
lFin2 =
240.4 MHz
f
fLOin = 1660 MHz
LOin = –5 dBm
P
CC = VPS = 3.0 V
V
–10 100
IFin (dBm)
RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL
( PC8106TB)
µ
10
3 (dBm)
0
–10
Pout
–20
–30
–40
–50
–60
–70
–80
–40
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM
–30
–20
IF Input Level PIFin (dBm)
IM3
–10
fRFout = 1.5 GHz
lFin1 = 130 MHz
f
lFin2 =
f
fLOin = 1630 MHz
LOin = –5 dBm
P
CC = VPS = 3.0 V
V
18
130.4 MHz
0
10
Data Sheet P12770EJ2V0DS00
RF OUTPUT LEVEL AND IM3 vs. IF INPUT LEVEL
( PC8109TB)
µ
10
3 (dBm)
0
–10
Pout
–20
–30
–40
–50
IM3
–60
–70
–80
–40
RF Output Level of Each Tone PRFout (dBm)
Third Order Intermodulation Distortion IM
–30
–20
IF Input Level P
fRFout = 1.5 GHz
lFin1 = 130 MHz
f
lFin2 =
130.4 MHz
f
fLOin = 1630 MHz
LOin = –5 dBm
P
CC = VPS = 3.0 V
V
–10
IFin (dBm)
0
10
Page 19
µµµµ
PC8106TB,
µµµµ
PC8109TB
LOCAL LEAKAGE AT IF PIN vs. LOCAL INPUT
FREQUENCY ( PC8106TB)
µ
0
f
RFout
= 1.9 GHz
LOin
= –5 dBm
P
V
CC
–10
(dBm)
if
= VPS = 3.0 V
–20
–30
–40
Local Leakage at IF Pin LO
–50
0
Local Input Frequency f
1.5 2 2.5 3 3.50.5 1
LOin
(GHZ)
IF LEAKAGE AT RF PIN vs. IF INPUT
FREQUENCY ( PC8106TB)
µ
0
f
RFout
= 1.9 GHz
LOin
= 1.66 GHz
f
LOin
= –5 dBm
P
–10
(dBm)
rf
IFin
= –30 dBm
f
V
CC
= VPS = 3.0 V
–20
LOCAL LEAKAGE AT RF PIN vs. LOCAL INPUT
FREQUENCY ( PC8106TB)
µ
0
f
RFout
= 1.9 GHz
LOin
= –5 dBm
P
V
CC
–10
(dBm)
rf
= VPS = 3.0 V
–20
–30
–40
Local Leakage at RF Pin LO
–50
0
Local Input Frequency f
1.5 2 2.5 3 3.50.5 1
LOin
(GHZ)
–30
–40
IF Leakage at RF Pin IF
–50
0
IF Input Frequency f
300 400 500 600100 200
IFin
(MHZ)
Data Sheet P12770EJ2V0DS00
19
Page 20
PACKAGE DIMENSIONS
6 pin super minimold (Unit: mm)
µµµµ
PC8106TB,
µµµµ
PC8109TB
2.1 ±0.1
1.25 ±0.1
0.2
+0.1
–0
0.65 0.65
1.3
2.0 ±0.2
0.1 MIN.
0.7
0.9 ±0.1
0.15
+0.1
–0
0 to 0.1
20
Data Sheet P12770EJ2V0DS00
Page 21
µµµµ
PC8106TB,
µµµµ
PC8109TB
NOTES ON CORRECT USE
(1) Observe precutions for handling because of electrostatic sensitive devices.
(2) Form a ground pattern wide as possible to minimize ground impedance (to prevent undesired oscillation).
(3) Keep the wiring length of the ground pins as short as possible.
(4) Connect a bypass capacitor to the VCC pin.
(5) Connect a matching circuit to the RF output pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your NEC sales representative.
Soldering Method Soldering Conditions
Infrared Reflow Package peak temperature: 235°C or below
Time: 30 seconds or less (at 210°C)
Count: 3, Exposure limi t: None
VPS Package peak temperature: 215°C or below
Time: 40 seconds or less (at 200°C)
Count: 3, Exposure limi t: None
Wave Soldering Soldering bath temperature: 260°C or below
Time: 10 seconds or less
Count: 1, Exposure limi t: None
Partial Heating Pin temperature: 300°C
Time: 3 seconds or less (per side of device)
Exposure limit: None
After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period.
Note
Note
Note
Note
Note
Recommended Condition
Symbol
IR35-00-3
VP15-00-3
WS60-00-1
–
Caution Do not use different soldering methods together (except for partial heating).
For details of recommended soldering conditions for surface mounting, refer to information document
SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).
Data Sheet P12770EJ2V0DS00
21
Page 22
[MEMO]
µµµµ
PC8106TB,
µµµµ
PC8109TB
22
Data Sheet P12770EJ2V0DS00
Page 23
[MEMO]
µµµµ
PC8106TB,
µµµµ
PC8109TB
Data Sheet P12770EJ2V0DS00
23
Page 24
µµµµ
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
DEVICES
PC8106TB,
NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
µµµµ
PC8109TB
M7 98. 8
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