Datasheet UPC2726T-E3 Datasheet (NEC)

DATA SHEET

BIPOLAR NALOG NTEGRATED IRCUIT

PC2726T

µµµµ

1.6 GHz DIFFERENTIAL WIDE BAND AMPLIFIER

SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT

DESCRIPTION

The µPC2726T is a silicon microwave monolithic integrated circuit designed for miniature differenctial amplifier. This IC operates up to 1.6 GHz and therefore is suitable for BS tuner, mobile communication and measurement equipment applications. This IC can also use as differential oscillator application.

The µPC27×× series is manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This process uses silicon nitride passivation film and gold metallization wirings. These materials can protect the chips from external pollution and prevent corrosion and migration. Thus, this process can produce the ICs with excellent performance, uniformity and reliability.

FEATURES

• Wide frequency respone − fU= 1.6 GHz @ −3 dB GP, VCC = 5 V

• Power gain − GP = 15 dB @ 5 V

• Low power consumption: 5 V, 15 mA TYP./2 V, 2.5 mA

• 6 pin mini mold for high-density surface mounting.

ORDERING INFORMATION

PART NUMBER PACKAGE SUPPLYING FORM

µ

PC2726T-E3 6 pin mini mold Embossed tape 8 mm wide. 3 kp/reel.

Pin 1, 2, 3 face to perforation side of the tape.

For evaluation sample order, please contact your local NEC sales office. (Part number:

*

µ

EQUIVALENT CIRCUIT PIN CONNECTIONS

VCC

RF OUT

RF IN

<4> <6>

<5>

<3> <1>

RF OUT RF IN

3

2

1

(Top View)

C 1 P

4

5

6

1. INPUT

2. GND

3. OUTPUT

4. OUTPUT

5. V

CC

6. INPUT

4

5

6

PC2726T)

(Bottom View)

3

2

1

Document No. P10873EJ2V0DS00 (2nd edition) (Previous No. IC-3125) Date Published March 1997 N Printed in Japan

GND<2>

Caution: Electro-static sensitive device

1994©

ABSOLUTE MAXIMUM RATINGS

PPPP

PC2726T

Supply Voltage V Power Dissipation of Package Allowance P

CC

6VT

D

280 mW Mounted on 50 u 50 u 1.6 mm

A

= +25 °C

epoxy glass PWB at TA = +85 °C

opt stg

in

40 to +85 °C

ð

55 to +150 °C

ð

0 dBm TA = +25 °C

Input Power P Operating Temperature T Storage Temperature T

RECOMMENDED OPERATING CONDITIONS

PARAMETERS SYMBOL MIN. TYP. MAX. UNIT Supply Voltage V Operating Temperature T

ELECTRICAL CHARACTERISTICS (TA = +25 °C, VCC = 5. V, ZL = ZS = 50

PARAMETERS SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Circuit Current I Power Gain G Noise Figure NF 4.5 6.0 dB f = 400 MHz Upper Limit Operating Frequency f Isolation ISL 60 dB f = 400 MHz Input Return Loss RL Output Return Loss RL Maximum Output Level P

CC

A

CC

P

U

out

O(sat)

4.5 5.0 5.5 V

ð40 +25 +85 °C

)

::::

8.0 11.5 15.0 mA No input signal

11.0 15 17.0 dB f = 400 MHz

1.0 1.6 GHz 3 dB down below flat gain at 0.4 GHz

in

2.0 dB f = 400 MHz

4.0 dB f = 400 MHz

ð5 ð2 dBm f = 400 MHz, Pin = ð10 dBm

STANDARD CHARACTERISTICS FOR REFERENCE (TA = +25 °C, ZL = ZS = 50

P

u

in

out

3

REFERENCE VALUE

UNIT TEST CONDITIONS

2.5 mA VCC = 2 V, No input signal

4.5 dB VCC = 2 V, f = 400 MHz

2.4 GHz 3 dB down below flat gain at 0.4 GHz

1.0 dB VCC = 2 V, f = 400 MHz

4.0 dB VCC = 2 V, f = 400 MHz

ð14 dBm VCC = 2 V, f = 400 MHz, Pin = ð10 dBm ð29 dBc VCC = 2 V, P

2

= 402 MHz

f

ð45 dBc VCC = 5 V, P

2

= 402 MHz

f

O(each)

= ð25 dBm, f1 = 400 MHz,

O(each)

= ð25 dBm, f1 = 400 MHz,

PARAMETERS SYMBOL

Circuit Current I

CC

Power Gain G Noise Figure NF 5.1 dB VCC = 2 V, f = 400 MHz Upper Limit Operating Frequency f Isolation ISL 58 dB VCC = 2 V, f = 400 MHz Input Return Loss RL Output Return Loss RL Maximum Output Power P

O(sat)

3rd Order Intermodulation Distortion IM

2

)

::::

TEST CIRCUITS

DC Parameters

AC Parameters

V

CC

IN OUT

V

CC

5.0 V

PPPP

PC2726T

1 000 pF

CIN1 (1 000 pF)

IN OUT

IN

2 (1 000 pF)

C

IN

C

OUT

1 (1 000 pF)

OUT

2 (1 000 pF)

C

OUT

3

PPPP

PC2726T

TYPICAL CHARACTERISTICS

CIRCUIT CURRENT vs. SUPPLY VOLTAGE

20

No input signals

18 16 14 12 10

8 6

– Circuit Current – mA

CC

I

4 2

– Power Gain – dB

P

G

9

02346

20

10

0

1

V

CC

– Supply Voltage – V

NOISE FIGURE, POWER GAIN vs. FREQUENCY

P

G

(Unless otherwise specified T

5

VCC = 5.5 V

5.0 V

4.5 V

3.0 V

2.0 V

A

= +25 °C)

CIRCUIT CURRENT vs. OPERATING TEMPERATURE

16 14 12 10

8 6

– Circuit Current – mA

4

CC

I

2 0

–20 20 60 100

opt

T

POWER GAIN vs. FREQUENCY

20

10

CC

V

0–40

40 80

– Operating Temperature – °C

VCC = +85 °C

= 5.0 V

–40 °C

+25 °C

7

NF

5 3

NF – Noise Figure – dB

1

0.1

0

VCC = 5.0 V

–20

–40

ISL – Isolation – dB

–60

–80

0.1

VCC = 2.0 V

VCC = 4.5 V - 5.5 V

0.3 1.0 3.0

f – Frequency – GHz

ISOLATION vs. FREQUENCY

0.3 1.0 3.0

f – Frequency – GHz

2.0

0

– Power Gain – dB

P

G

VCC = 5.0 V

–5

f – Frequency – GHz

RETURN LOSS vs. FREQUENCY

0

RL

out

–10

–20

– Output Return Loss – dB

–30

– Input Return Loss – dB

in

out

RL

–40

0.1 f – Frequency – GHz

RL

2.00.1

out

in

0.3 1.0 3.0

RL

in

0.3 1.0 2.0

4

PPPP

PC2726T

10

f = 400 MHz

0

VCC = 5.5 V

VCC = 5.0 V

–10

–20

OUTPUT POWER vs. INPUT POWER

– Output Power – dBm

O

P

–30

–40

–50

–40 –30 –20

P

in

– Input Power – dBm

OUTPUT POWER vs. INPUT POWER

10

f = 1 GHz

0

VCC = 5.5 V

VCC = 5.0 V

VCC = 4.5 V

VCC = 2.0 V

–10

10

OUTPUT POWER vs. INPUT POWER

CC

= 5.0 V

0

–10

V

f = 400 MHz

T

A = +85 °C

T

A = +25 °C

TA = –40 °C

–20

– Output Power – dBm

O

P

–30

–40

0

–50

–40 –30 –20

P

in

– Input Power – dBm

–10

0

OUTPUT POWER vs. INPUT POWER

10

CC

= 5.0 V

V

0

–10

–20

– Output Power – dBm

O

P

–30

–40

–50

–40 –30 –20

P

in

– Input Power – dBm

SATURATED OUTPUT POWER vs. FREQUENCY

0 –2 –4

VCC = 5.5 V VCC = 5.0 V

–6

VCC = 4.5 V

–8

–10 –12

VCC = 2.0 V

–14 –16

– Saturated Output Power – dBm

O(sat)

–18

P

–20

0.1

0.2 3

0.5 1

f – Frequency – GHz

VCC = 4.5 V

VCC = 2.0 V

–10

f = 400 MHz

–20

– Output Power – dBm

O

P

–30

f = 1 GHz

–40

0

–50

–40 –30 –20

P

in

– Input Power – dBm

–10

0

3rd ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE

60

f1 = 400 MHz f

2

= 402 MHz

50

VCC = 5.5 V VCC = 5.0 V

40

VCC = 4.5 V

30

VCC = 2.0 V

20

– 3rd Order Intermodulation Distortion – dBc

3

10

IM

2

–40 –20 –10

–30 0

P

O(each)

– Output Power of Each Tone – dBm

5

S PARAMETER

S11-FREQUENCY

PPPP

PC2726T

0.13

0.12

0.11

0.39

100

0.9

0.8

0.7

0.5

0.6

0.7

0.8

REACTANCE COMPONENT

R

––––

(

)

Z

O

0.8

0.9

–110

–100

0.10

0.11

0.40

0.39

0.38

0.10

0.40

0.09

0.41

0.08

0.07

0.43

130

0.06

0.44

–150

0.05

O

140

P

0.4

M

CO

E

C

N

A

T

)

0.3

C

A

O

E

+JX

R

––––

(

E

V

Z

I

T

I

OS

P

0.1

0.2

T

N

E

N

O

P

)

OM

O

C

E

0.3

C

(

– JX

N

––––

A

T

C

A

E

R

0.4

–140

0.06

0.44

–130

000.07

0.43

0.05

0.45

R

O

T

A

R

0.04

E

0.46

150

N

E

G

D

R

0.03

A

S

0.47

E

W

0.2

E

O

R

T

G

S

E

H

D

T

0.02

G

0.48

N

I

N

T

E

N

L

0.1

E

I

V

C

A

F

0.01

0.49

W

F

E

O C

0

N

0

O

I

T

C

E

L

F

E

R

0.01

0.1

0.49

F

O

E

L

G

N

0.02

A

0.48

0.2

–160

0.03

0.47

0.04

0.46

0.45

110

0.42

120

0.6

0.5

T

N

E

N

0.3

0.4

Z

IVE

T

A

G

NE

0.5

0.6

0.7

–120

0.08

0.42

0.09

0.41

0.14

0.37

90

1.0

0.2

0.4

0.2

0.9

1.0

0.2

0.4

0.2

1.0

–90

0.12

0.38

0.15

0.36

80

0.2

0.6

0.8

1.0

0.8

0.6

0.4

1.2

1.4

0.6

0.8

1.0

0.8

0.6

0.4

1.2

0.13

0.37

0.16

0.35

0.34

0.15

–70

0.35

0.17

0.33

0.18

0060

1.6

0.32

1.8

3.0

1.8

–60

1.6

0.16

0.34

0.19

50

0.31

2.0

4.0

2.0

0.17

0.33

0.20

40

0.30

0.21

3.0

0.29

30

0.22

4.0

0.28

20

6.0

0.23

0.27

10

0.24

0.26

20

50

0.25

0

20

10

5.0

–50

400 M

3.0

0.18

0.32

–40

0.19

50

100 M

6.0

4.0

–30

0.20

0.30

0.31

10

–20

50

20

–10

0.22

000.21

0.29

0.23

0.24

0.28

0.26

0.27

70

1.4

1.0

1.6

1.8

2.0

1 G

1.0

1.4

–80

0.04

0.36

S22-FREQUENCY

0.13

0.12

0.11

0.10

0.40

0.09

0.41

0.42

N

O

(

Z

IVE

T

0.5

–130

110

120

0.6

0.5

T

N

E

0.3

0.4

A

G

NE

0.6

0.7

–120

0.08

0.42

0.09

0.41

0.08

0.07

0.43

130

0.06

0.44

0.05

140

P

0.4

M

0.45

R

O

T

A

R

0.04

E

0.46

N

E

G

D

R

0.03

A

S

0.47

E

W

E

O

R

T

G

S

E

H

D

T

0.02

G

0.48

N

I

N

T

E

N

L

0.1

E

I

V

C

A

F

0.01

0.49

W

F

E

O C

0

N

0

O

I

T

C

E

L

F

E

R

0.01

0.1

0.49

F

O

E

L

G

N

0.02

A

0.48

–160

0.03

0.47

0.04

0.46

CO

E

C

N

A

T

)

0.3

C

150

A

O

E

+JX

R

––––

(

E

V

Z

I

T

I

OS

P

0.2

0.1

0.2

T

0.2

N

E

N

O

P

)

OM

O

C

E

0.3

C

– JX

N

––––

–150

A

T

C

A

E

R

0.4

0.05

–140

0.45

0.06

0.44

000.07

0.43

0.38

0.39

100

0.9

0.8

0.7

0.5

0.6

0.7

0.8

REACTANCE COMPONENT

R

––––

(

)

Z

O

0.8

0.9

–110

–100

0.10

0.11

0.40

0.39

0.14

0.37

90

1.0

0.2

0.4

0.2

0.9

1.0

0.2

0.4

0.2

1.0

–90

0.12

0.38

0.15

0.36

80

0.2

0.6

0.8

1.0

0.8

0.6

0.4

1.2

1.4

0.6

0.8

1.0

0.8

0.6

0.4

1.2

0.13

0.37

0.16

0.35

0.34

0.15

–70

0.35

0.17

0.33

0.18

0060

1.6

0.32

2.0

4.0

100 M

400 M

1 G

2.0

0.17

50

0.33

0.19

0.31

0.20

40

0.30

0.21

3.0

0.29

30

0.22

4.0

0.28

20

6.0

0.23

0.27

10

0.24

0.26

20

50

0.25

0

20

10

5.0

50

0.24

0.26

20

–10

10

0.23

0.27

–20

0.22

6.0

0.28

4.0

000.21

–30

0.29

3.0

0.20

–40

0.30

0.19

0.31

–50

0.18

0.32

1.8

3.0

1.8

–60

1.6

0.16

0.34

70

1.4

1.0

1.6

1.8

2.0

1.0

1.4

–80

0.04

0.36

6

ILLUSTRATION OF THE EVALUATION BOARD FOR TEST CIRCUIT

3.5 7 14 14 4 5.5 16.5 11

710411

16- 2.3

23 7.2 3

10.2

(8.8)

1.21.2 1

φφ

9- 0.8

PPPP

PC2726T

0.74

23 (6)

6

2.03

142.23°

0.29

51 3.8 11.2 5

4

0.74

9

12

7.23°

18.9

3.51

±0.02

2.06

±0.02

0.74

8

2

3.5

2.03

22

2.03

1.8

7.23

1

11

20.24

4

12.5 11.5 9 14 7 14

11.8

1.2

135°

22

2.03

8.24

1.52

42

1

1.8

2.03

±0.02

2.06

±0.02

2.06

±0.02

0.74

2.4

5.44

±0.02

18.16

9

35

14

Note

135°

1.51222

2.03(4.83)

2

22

2

7.28°

(1) 50 × 50 × 0.5 mm double copper clad polyimide board. (2) Back side: GND pattern (3) Solder plated on pattern (4) : Through holes

45°

DETAIL LAYOUT t = 0.4

2.03

7

EXAMPLE FOR SYSTEM APPLICATION

DBS tuner

< From ODU. >

PPPP

PC2726T

DETDC AMP

IF amp.

MIX.ATT RF amp.RF amp.1st IF input

Sound Visual

µ

PC2723TµPC2726T FM DEMO

VCO

PLL

OP

LPF

8

6 PINS MINI MOLD PACKAGE DIMENSIONS (Unit: mm)

+0.1

0.3

–0.05

123

–0.3

–0.1

+0.2

1.5

2.8

65

4

0.13±0.1

0 to 0.1

PPPP

PC2726T

0.950.95

1.9

2.9±0.2

1.1

0.8

+0.2 –0.1

9

PPPP

PC2726T

NOTE ON CORRECT USE

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to prevent an increase in ground impedance (which can cause

undesired oscillation). (3) Keep the wiring length of the ground pins as short as possible. (4) Connect a bypass capacitor (having, for example, a capacitance of 1 000 pF) to the VCC pin.

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered in the following recommended conditions. Other soldering methods and

conditions than the recommended conditions are to be consulted with our sales representatives.

PC2726T

P

Soldering process Soldering conditions

Infrared ray reflow Package peak temperature: 235 °C,

Hour: within 30 s. (more than 210 °C), Time: 3 times, Limited days; no.*

VPS Package peak temperature: 215 °C,

Hour: within 40 s. (more than 200 °C), Time: 3 times, Limited days: no.*

Wave soldering Soldering tub temperature: less than 260 °C,

Hour: within 10 s. Time: 1 time, Limited days: no.

Pin part heating Pin area temperature: less than 300 °C,

Hour: within 3 s. Limited days: no.*

: It is the storage days after opening a dry pack, the storage conditions are 25 °C, less than 65 % RH.

* Note 1.

The combined use of soldering method is to be avoided (However, except the pin area heating method).

Recommended condition symbols

IR35-00-3

VP15-00-3

WS60-00-1

For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

10

[MEMO]

PPPP

PC2726T

11

PPPP

PC2726T

The applicatoin circuit and circuit constants shown in this document are for reference only and may not be employed for mass production of the application system.

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.

NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

M4 96. 5