Datasheet UNR911L, UNR911H, UNR911E, UNR911D, UNR911CJ Datasheet (Panasonic)

...
Page 1
Transistors with built-in Resistor
B
C
R1
R2
E
1.6±0.15
1.6±0.1
1.0±0.1
0.75±0.15
0.45±0.1
0.5
0.3
0 to 0.1
0.5
0.8±0.1 0.40.4
0.2
+0.1
-0.05
0.15
+0.1
-0.05
1
2
3
0.2±0.1
1.60
+0.05
–0.03
0.70
+0.05
–0.03
0.12
+0.03
–0.01
0 to 0.1
0.80 0.80
0.500.50
1.60±0.05
0.80±0.050.80
0.425 0.425
1.00±0.05
0.27±0.02
0.85
+0.05 –0.03
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/ 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape packing and magazine packing.
Resistance by Part Number
Marking Symbol (R1)(R
UN9111 6A 10k 10k
UN9112 6B 22k 22k
UN9113 6C 47k 47k
UN9114 6D 10k 47k
UN9115 6E 10k
UN9116 6F 4.7k
UN9117 6H 22k
UN9118 6I 0.51k 5.1k
UN9119 6K 1k 10k
UN9110 6L 47k
UN911D 6M 47k 10k
UN911E 6N 47k 22k
UN911F 6O 4.7k 10k
UN911H 6P 2.2k 10k
UN911L 6Q 4.7k 4.7k
UNR911AJ 6X 100k 100k
UNR911BJ 6Y 100k
UNR911CJ 6Z 47k
)
2
Unit: mm
1 : Base 2 : Emitter 3 : Collector SS–Mini Type Pakage
Unit: mm
1 : Base
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage V Collector to emitter voltage Collector current I Total power dissipation P
Storage temperature T
Junction temperature T
CBO
V
CEO
C
T
j
stg
–50 V –50 V
–100 mA
125 mW 125 ˚C
–55 to +125 ˚C
Internal Connection
2 : Emitter 3 : Collector SS–Mini Flat Type Pakage (J type)
1
Page 2
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Electrical Characteristics (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
I
Collector cutoff current
UN9111 – 0.5 UN9112/9114/911E/911D – 0.2
Emitter cutoff current
UN9113/UNR911AJ – 0.1 UN9115/9116/9117/9110/UNR911BJ UN911F/911H –1.0 UN9119 –1.5
UN9118/911L/911CJ –2.0 Collector to base voltage V Collector to emitter voltage V
UN9111 35
Forward current transfer ratio
UN9112/911E 60
UN9113/9114/UNR911AJ/911CJ
UN9115*/9116*/9117*/9110*UNR911BJ
UN911F/911D/9119/911H 30
UN9118/911L 20 Collector to emitter saturation voltage V Output voltage high level V Output voltage low level VCC = –5V, VB = –2.5V, RL = 1k – 0.2
UN9113/UNR911BJ VCC = –5V, VB = –3.5V, RL = 1k – 0.2
UN911D V
UN911E VCC = –5V, VB = –6V, RL = 1k – 0.2
UNR911AJ VCC = –5V, VB = –5.0V, RL = 1k – 0.2 Transition frequency 150
UNR911AJ
UN9111/9114/9115 10
UN9112/9117 22
UN9113/9110/911D/911E 47
Input resis­tance
UN9116/911F/911L
UN9118 0.51
UN9119 1
UN911H 2.2
UNR911AJ/911BJ 100
I
I
h
f
R
CBO
CEO
EBO
FE
T
CBO
CEO
CE(sat)
OH
OL
1
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
VCB = –50V, IE = 0 – 0.1 µA VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 – 0.01 mA
IC = –10µA, IE = 0 –50 V IC = –2mA, IB = 0 –50 V
VCE = –10V, IC = –5mA
IC = –10mA, IB = – 0.3mA – 0.25 V VCC = –5V, VB = – 0.5V, RL = 1k –4.9 V
VCC = –5V, VB = –10V, RL = 1k – 0.2 V
VCB = –10V, IE = 2mA, f = 200MHz
80
160 460
80
4.7
(–30%)
(+30%) k
MHz
* hFE rank classification (UN9115/9116/9117/9110)
Rank Q R S
h
FE
160 to 260 210 to 340 290 to 460
2
Page 3
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Electrical Characteristics (continued) (Ta=25˚C)
Parameter Symbol Conditions min typ max Unit
UN9111/9112/9113/911L 0.8 1.0 1.2
UN9114 0.17 0.21 0.25
UN9118/9119 0.08 0.1 0.12
Resis­tance ratio
Resistance between Emitter to Base
UN911D
UN911E 2.14
UN911F 0.47
UN911H 0.17 0.22 0.27
UNR911AJ 1.0
UNR911CJ
R1/R
R
2
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
2
4.7
–30% 47 30%
3
Page 4
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Common characteristics chart
— Ta
P
T
150
)
125
mW
(
T
100
75
50
25
Total power dissipation P
0
0 16020 60 100 14040 12080
Ambient temperature Ta (˚C
)
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9111
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
IB=–1.0mA
–0.9mA
CB
f=1MHz I Ta=25˚C
Ta=25˚C
–0.8mA
–0.7mA –0.6mA –0.5mA
–0.4mA –0.3mA
–0.2mA
–0.1mA
=0
E
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
160
VCE=–10V
FE
120
80
40
C
Forward current transfer ratio h
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V Ta=25˚C
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
4
–100
–30
–10
Output current I
3
–1
–0.4
)
Input voltage VIN (V
–1.4–1.2–1.0–0.8–0.6
)
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–1 –3 –10 –30 –100
)
Page 5
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Characteristics charts of UN9112
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
— V
I
C
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
IB=–1.0mA
–0.9mA
–0.8mA
CB
Ta=25˚C
–0.7mA
–0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
400
FE
300
200
100
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V Ta=25˚C
3
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9113
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
IB=–1.0mA
–0.9mA
Ta=25˚C
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
Ta=75˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Forward current transfer ratio h
)
Ta=75˚C
25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
5
Page 6
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
) (
pF
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9114
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
Collector to emitter voltage VCE (V
Ta=25˚C
–0.9mA
–0.8mA
–0.7mA
–0.6mA –0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–3
–1
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
25˚C
IN
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–1.4–1.2–1.0–0.8–0.6
–0.01
400
FE
300
200
100
–0.1 –0.3
Forward current transfer ratio h
0
–1 –3
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
Output current IO (mA
hFE — I
–10 –30 –100 –300 –1000
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
)
Cob — V
6
CB
)
pF
(
5
ob
4
3
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
6
f=1MHz
=0
I
E
Ta=25˚C
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
IN
VO=–5V Ta=25˚C
–1.4–1.2–1.0–0.8–0.6
–1000
–300
)
–100
V
(
IN
–30
–10
–3
Input voltage V
–1
–0.3
–0.1
–0.1 –0.3
)
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
Output current IO (mA
)
Page 7
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Characteristics charts of UN9115
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
IB=–1.0mA
0 –12–2 –10–4 –8–6
Ta=25˚C
–0.9mA
–0.8mA
Collector to emitter voltage VCE (V
) (
pF
ob
Cob — V
6
5
4
CB
f=1MHz I
E
Ta=25˚C
–0.7mA –0.6mA
–0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
=0
V
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
–25˚C
–0.1 –0.3
Collector current IC (mA
— I
CE(sat)
25˚C
–1 –3 –10 –30 –100
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
C
Ta=75˚C
IC/IB=10
400
FE
300
200
100
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
)
IN
VO=–5V Ta=25˚C
–100
)
V
(
IN
–30
–10
–3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
3
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9116
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
IB=–1.0mA
–0.9mA
–0.8mA
Ta=25˚C
–0.7mA
–0.6mA –0.5mA –0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–3
–1
25˚C
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
— I
C
Ta=75˚C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
)
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
7
Page 8
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
) (
pF
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9117
— V
I
C
CE
–120
–100
) mA
(
C
–80
–60
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
Ta=25˚C
–0.4mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
Input voltage VIN (V
V
–3
–1
CE(sat)
IN
— I
C
VO=–5V Ta=25˚C
)
IC/IB=10
Ta=75˚C
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–1.4–1.2–1.0–0.8–0.6
–0.01
400
FE
300
200
–0.1 –0.3
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
)
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
) pF
(
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz I Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–0.3mA –0.2mA
–0.1mA
=0
E
–0.3
–0.1
–0.03
25˚C
–25˚C
25˚C
100
–25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V Ta=25˚C
Input voltage VIN (V
)
–1.4–1.2–1.0–0.8–0.6
)
0
–1 –3
Collector current IC (mA
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–10 –30 –100 –300 –1000
)
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
)
8
Page 9
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Characteristics charts of UN9118
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
— V
I
C
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
–0.9mA
–0.8mA
CB
Ta=25˚C
–0.7mA
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA
–0.1mA
f=1MHz I
=0
E
Ta=25˚C
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
V
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V Ta=25˚C
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–100
–30
)
–10
V
(
IN
–3
O
)
VO=–0.2V Ta=25˚C
3
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9119
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
IB=–1.0mA
–0.9mA
Collector to emitter voltage VCE (V
–0.8mA
–0.7mA
Ta=25˚C
–0.6mA –0.5mA
–0.4mA –0.3mA –0.2mA –0.1mA
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
–1.4–1.2–1.0–0.8–0.6
)
IC/IB=10
Ta=75˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
)
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
9
Page 10
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
) pF
(
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN9110
— V
I
C
CE
)
mA
(
C
–120
–100
–80
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Ta=25˚C
–0.3mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–100
)
V
(
–30
CE(sat)
–10
Input voltage VIN (V
V
–3
CE(sat)
IN
— I
C
VO=–5V Ta=25˚C
)
IC/IB=10
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–1.4–1.2–1.0–0.8–0.6
–0.01
400
FE
300
–0.1 –0.3
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
Output current IO (mA
hFE — I
C
VCE=–10V
Ta=75˚C
)
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
CB
)
pF
(
5
ob
4
3
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
–0.2mA
–0.1mA
f=1MHz
=0
I
E
Ta=25˚C
–0.3
–0.1
–0.03
–1
Ta=75˚C
25˚C
–25˚C
200
100
25˚C
–25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
Input voltage VIN (V
IN
VO=–5V Ta=25˚C
)
)
–1.4–1.2–1.0–0.8–0.6
0
–1 –3
Collector current IC (mA
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
Output current IO (mA
–10 –30 –100 –300 –1000
)
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
)
10
Page 11
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Characteristics charts of UN911D
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
— V
I
C
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
IB=–1.0mA
–0.9mA
–0.4mA
0
0 –12–2 –10–4 –8–6
–0.8mA
–0.5mA
Collector to emitter voltage VCE (V
Cob — V
6
)
pF
(
5
ob
4
CE
–0.7mA
–0.6mA
CB
Ta=25˚C
–0.3mA –0.2mA
–0.1mA
f=1MHz I
=0
E
Ta=25˚C
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
V
–25˚C
CE(sat)
25˚C
— I
C
Ta=75˚C
IC/IB=10
hFE — I
160
FE
120
80
40
C
VCE=–10V
Ta=75˚C
25˚C –25˚C
Forward current transfer ratio h
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–10000
–3000
)
–1000
µA
(
O
–300
–1 –3 –10 –30 –100
Collector current IC (mA
IO — V
IN
VO=–5V Ta=25˚C
)
–100
) V
(
IN
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
–30
–10
–3
O
VO=–0.2V Ta=25˚C
)
3
2
1
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN911E
— V
I
C
CE
–60
IB=–1.0mA
–0.9mA
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –12–2 –10–4 –8–6
–0.8mA –0.7mA
–0.4mA
Collector to emitter voltage VCE (V
–0.5mA
–0.6mA
Ta=25˚C
–0.3mA –0.2mA
–0.1mA
–100
–30
–10
Output current I
–3
–1
–1.5
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Input voltage VIN (V
V
–3
–1
–25˚C
CE(sat)
25˚C
— I
C
–4.0–3.5–3.0–2.5–2.0
)
IC/IB=10
Ta=75˚C
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
–1 –3 –10 –30 –100
Output current IO (mA
hFE — I
400
FE
300
200
100
C
Ta=75˚C
VCE=–10V
25˚C –25˚C
Forward current transfer ratio h
)
Collector to emitter saturation voltage V
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
11
Page 12
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
) (
pF
ob
Cob — V
6
5
4
3
2
1
CB
f=1MHz I
=0
E
Ta=25˚C
Collector output capacitance C
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
Characteristics charts of UN911F
— V
I
C
CE
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
IB=–1.0mA
–0.9mA
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
–0.8mA
–0.7mA
–0.6mA
Ta=25˚C
–0.5mA –0.4mA
–0.3mA –0.2mA
–0.1mA
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–1.5
)
–100
)
V
(
–30
CE(sat)
–10
–0.3
–0.1
–0.03
Collector to emitter saturation voltage V
–0.01
)
Input voltage VIN (V
V
CE(sat)
–3
–1
–25˚C
–0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
25˚C
IN
— I
VO=–5V Ta=25˚C
C
Ta=75˚C
)
IC/IB=10
)
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–4.0–3.5–3.0–2.5–2.0
–0.01
–0.1 –0.3
160
FE
120
80
40
Forward current transfer ratio h
0
–1 –3
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
Output current IO (mA
hFE — I
–10 –30 –100 –300 –1000
C
VCE=–10V
Ta=75˚C
25˚C –25˚C
Collector current IC (mA
)
)
Cob — V
6
CB
) pF
(
5
ob
4
3
2
1
Collector output capacitance C
0
–0.1 –0.3
–1 –3 –10 –30 –100
Collector to base voltage VCB (V
12
f=1MHz
=0
I
E
Ta=25˚C
IO — V
–10000
–3000
)
–1000
µA
(
O
–300
–100
–30
–10
Output current I
–3
–1
–0.4
)
Input voltage VIN (V
IN
VO=–5V Ta=25˚C
–1.4–1.2–1.0–0.8–0.6
–100
–30
)
–10
V
(
IN
–3
–1
–0.3
Input voltage V
–0.1
–0.03
–0.01
–0.1 –0.3
)
VIN — I
–1 –3 –10 –30 –100
O
VO=–0.2V Ta=25˚C
Output current IO (mA
)
Page 13
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
Characteristics charts of UN911H
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
— V
I
C
–120
–100
)
mA
(
–80
C
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Cob — V
6
) pF
(
5
ob
4
CE
CB
Ta=25˚C
IB=–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
f=1MHz I
=0
E
Ta=25˚C
–100
)
V
(
CE(sat)
–10
–0.1
V
–1
CE(sat)
25˚C
–25˚C
— I
Ta=75˚C
C
IC/IB=10
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
C
VCE=–10V
Ta=75˚C 25˚C
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–100
)
–10
V
(
IN
–10 –30 –100 –300 –1000
Collector current IC (mA
VIN — I
O
VO=–0.2V Ta=25˚C
)
0 –0.1 –0.3
–1 –3 –10 –30 –100
Collector current IC (mA
)
3
2
1
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
Characteristics charts of UN911L
— V
I
C
CE
–240
–200
) mA
(
–160
C
–120
–80
Collector current I
–40
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
Ta=25˚C
IB=–1.0mA
–0.8mA
–0.6mA
–0.4mA
–0.2mA
–1
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
–100
)
V
(
–30
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
–1 –3 –10 –30 –100
Output current IO (mA
V
CE(sat)
Ta=75˚C
25˚C
— I
–25˚C
C
IC/IB=10
)
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
Ta=75˚C
25˚C
C
VCE=–10V
–25˚C
Collector to emitter saturation voltage V
–0.01
–1 –3
)
–10 –30 –100 –300 –1000
Collector current IC (mA
)
0
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
)
13
Page 14
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Cob — V
6
CB
)
pF
(
5
ob
4
3
2
1
Collector output capacitance C
0
–3 –10 –30 –100
–1
Collector to base voltage VCB (V
f=1MHz I
=0
E
Ta=25˚C
VIN — I
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
–0.01
–0.1 –0.3
)
–1 –3 –10 –30 –100
Output current IO (mA
O
VO=–0.2V Ta=25˚C
)
14
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