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B-66 01/99
U308, U309
N-Channel Silicon Junction Field-Effect Transistor
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At 25°C free air temperature:
Static Electrical Characteristics
Gate Source Breakdown Voltage V
Gate Reverse Current I
Gate Source Cutoff Voltage V
Gate Source Forward Voltage V
Drain Saturation Current (Pulsed) I
Dynamic Electrical Characteristics
Common Gate Forward
Transconductance
Common Gate Output Conductance G
Drain Gate Capacitance C
Gate Source Capacitance C
Equivalent Short Circuit
Input Noise Voltage
Common Gate Power Gain G
Noise Figure NF
(BR)GSS
GSS
GS(OFF)
GS(F)
DSS
G
fs
og
dg
gs
¯e
N
pg
Absolute maximum ratings at TA= 25¡C.
Reverse Gate Source & Reverse Gate Drain Voltage – 25 V
Continuous Forward Gate Current 20 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mw/°C
U308 U309 Process NJ72
Min Typ Max Min Typ Max Unit Test Conditions
– 25 – 25 V VGS= – 1µA, VDS= ØV
– 150 – 150 pA VGS= – 15V, VDS= ØV
– 150 – 150 nA VGS= – 15V, VDS= ØV TA= +125°C
– 1– 6– 1– 4VV
11VV
12 60 12 30 mA VDS= 10V, VGS= ØV
10 17 10 17 mS VDS= 10V, ID= 10 mA f = 1 kHz
15 15 mS VDS= 10V, ID= 10 mA f = 105 MHz
14 14 mS VDS= 10V, ID= 10 mA f = 450 MHz
250 250 µS VDS= 10V, ID= 10 mA f = 1 kHz
0.18 0.18 µS VDS= 10V, ID= 10 mA f = 105 MHz
0.32 0.32 µS VDS= 10V, ID= 10 mA f = 450 MHz
2.5 2.5 pF VDS= 10V, VGS= – 10V f = 1 MHz
55pFV
10 10
14 16 14 16 dB VDS= 10V, ID= 10 mA f = 105 MHz
10 11 10 11 dB VDS= 10V, ID= 10 mA f = 450 MHz
1.5 2 1.5 2 dB V
2.7 3.5 2.7 3.5 dB VDS= 10V, ID= 10 mA f = 450 MHz
nV/√Hz
= 10V, ID= 1 nA
DS
= ØV, IG= 10 mA
DS
= 10V, VGS= – 10V f = 1 MHz
DS
VDS= 10V, ID= 10 mA f = 100 kHz
= 10V, ID= 10 mA f = 105 MHz
DS
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
Surface Mount
SMPJ308/J309
www.interfet.com
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