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01/99 B-65
U290, U291
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA= 25¡C
Reverse Gate Source & Reverse Gate Drain Voltage – 30 V
Continuous Forward Gate Current 100 mA
Continuous Device Power Dissipation 500 mW
Power Derating 4 mW/°C
TOÐ52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature: U290 U291 Process NJ1800D
Static Electrical Characteristics Min Max Min Max Unit Test Conditions
Gate Source Breakdown Voltage V
(BR)GSS
– 30 – 30 V IG= – 1 µA, VDS= ØV
Gate Reverse Current I
GSS
– 1 – 1 nA VGS= – 15V, VDS= ØA
– 1 – 1 µA VGS= – 15V, VDS= ØA TA= 150°C
Gate Source Cutoff Voltage V
GS(OFF)
– 4 – 10 – 1.5 – 4.5 V VDS= 15V, ID= 3 nA
Drain Saturation Current (Pulsed) I
DSS
500 200 mA VDS= 10V, VGS= ØV
Drain Cutoff Current I
D(OFF)
11nAV
DS
= 5V, VGS= – 10V
11µAV
DS
= 5V, VGS= – 10V TA= 150°C
Drain Source ON Voltage V
DS(ON)
30 70 mV VGS= ØV, ID= 10 mA
Static Drain Source ON Resistance r
DS(ON)
1327Ω VGS= ØV, ID= 10 mA
Dynamic Electrical Characteristics
Drain Source ON Resistance r
ds(on)
1327Ω VGS= ØV, ID= Ø f = 1 kHz
Drain Gate OFF Capacitance C
dgo
30 30 pF VDG= 15V, IS= ØV f = 1 MHz
Source Gate OFF Capacitance C
sgo
30 30 pF VDG= 15V, IS= ØV f = 1 MHz
Source Gate Plus Drain Gate C
iss
160 160 pF VDG= ØV, VGS= ØV f = 1 MHz
Switching Characteristics
VDD= 1.5 V, I
D(ON)
= 30 mA
Turn ON Delay Time td
(on)
15 15 ns
RL= 50 Ω
Rise Time t
r
20 20 ns
V
GS(ON)
= Ø V
Turn OFF Delay Time td
(off)
15 15 ns
(U290) V
GS(OFF)
= – 12V
Fall Time t
f
20 20 ns (U291) V
GS(OFF)
= – 7 V
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Databook.fxp 1/13/99 2:09 PM Page B-65
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