Datasheet TYN612RG Specification

Page 1
Sensitive and Standard
TN12, TS12 and TYNx12 Series
12 A SCRS
Main features
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
12 A
600 to 1000 V
0.2 to 15 mA
Description
Available either in sensitive (TS12) or standard (TN12 / TYN) gate triggering levels, the 12 A SCR series is suitable to fit all modes of control, found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits.
Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.
A
G
K
A
K
A
G
DPAK
(TN12-B / TS12-B)
A
K
A
G
K
IPAK
(TN12-H / TS12-H)
Order codes
Part Numbers Marking
TN1215-x00B TN1215x00
TN1215-x00B-TR TN1215x00
TN1215-x00G TN1215x00G
A
K
A
G
2
D
PAK
(TN12-G)
A
G
TO-220AB
(TYNx12RG)
A
TN1215-x00G-TR TN1215x00G
TN1215-x00H TN1215x00
TS1220-x00B TS1220x00
TS1220-x00B-TR TS1220x00
TS1220-x00H TS1220x00
TYNx12RG TYNx12
TYNx12TRG TYNx12T
March 2007 Rev 6 1/12
www.st.com
12
Page 2
Characteristics TN12, TS12 and TYNx12 Series

1 Characteristics

Table 1. Absolute ratings (limiting values)

Value
Symbol Parameter
TN12-G
TYN12
TN12-B/H TS12-B/H
Unit
I
T(RMS)
I
T(AV)
I
TSM
dI/dt
I
GM
P
G(AV)
T
V
RGM
Table 2. Sentitive electrical characteristics (Tj = 25° C, unless otherwise specified)
RMS on-state current (180° conduction angle) Tc = 105° C 12 A
Average on-state current (180° conduction angle) Tc = 105° C 8 A
= 8.3 ms
t
Non repetitive surge peak on-state current
²
tI²t Value for fusing tp = 10 ms Tj = 25° C 98 60 A
I
Critical rate of rise of on-state current I
= 2 x IGT , tr 100 ns
G
p
= 10 ms 140 110
t
p
F = 60 Hz T
= 25° C
T
j
= 125° C 50 A/µs
j
145 115
Peak gate current tp = 20 µs Tj = 125° C 4 A
Average gate power dissipation Tj = 125° C 1 W
Storage junction temperature range
stg
T
Operating junction temperature range
j
- 40 to + 150
- 40 to + 125
Maximum peak reverse gate voltage (for TN12 and TYN12 only) 5 V
Symbol Test Conditions TS1220 Unit
I
GT
V
GT
V
GD
V
RGIRG
I
H
I
L
dV/dt V
V
TM
V
t0
R
d
I
DRM
I
RRM
VD = 12 V RL = 140 Ω
VD = V
RL = 3.3 kΩ RGK = 220 Ω Tj = 125° C MIN. 0.1 V
DRM
= 10 µA MIN. 8 V
IT = 50 mA RGK = 1 kΩ MAX. 5 mA
IG = 1 mA RGK = 1 kΩ MAX. 6 mA
= 65 % V
D
RGK = 220 Ω Tj = 125° C MIN. 5 V/µs
DRM
ITM = 24 A tp = 380 µs Tj = 25° C MAX. 1.6 V
Threshold voltage Tj = 125° C MAX. 0.85 V
Dynamic resistance Tj = 125° C MAX. 30 mΩ
Tj = 25° C
V
DRM
= V
RRM
RGK = 220 Ω
= 125° C 2 mA
T
j
MAX. 200 µA
MAX. 0.8 V
A
MAX.
A
° C
2
S
2/12
Page 3
TN12, TS12 and TYNx12 Series Characteristics
Table 3. Standard electrical characteristics (Tj = 25° C, unless otherwise specified)
TN1215 TYN
Symbol Test Conditions
B / H G x12T x12
Unit
I
GT
VD = 12 V RL = 33 Ω
V
GT
V
dV/dt V
V
V
R
I
DRM
I
RRM

Table 4. Thermal resistance

VD = V
GD
IT = 500 mA Gate open MAX. 40 30 15 30 mA
I
H
IG = 1.2 I
I
L
= 67 % V
D
ITM = 24 A tp = 380 µs Tj = 25° C MAX. 1.6 V
TM
Threshold voltage Tj = 125° C MAX. 0.85 V
t0
Dynamic resistance Tj = 125° C MAX. 30 mΩ
d
V
DRM
RL = 3.3 kΩ Tj = 125° C MIN. 0.2 V
DRM
GT
Gate open Tj =125° C MIN. 200 40 200 V/µs
DRM
= V
RRM
Tj = 25° C
T
= 125° C 2 mA
j
MAX. 15 5 15
MAX. 1.3 V
MAX. 80 60 30 60 mA
A
MAX.
Symbol Parameter Value Unit
MIN. 2 0.5 2
R
R
th(j-c)
th(j-a)
Junction to case (DC) 1.3 ° C/W
(1)
= 0.5 cm²DPAK 70
S
(1)
S
= 1 cm²D2PA K 4 5
Junction to ambient (DC)
IPAK 100
mA
° C/W
1. S = Copper surface under tab
Figure 1. Maximum average power
dissipation versus average on-state current
P(W)
12
11
α = 180°
10
9
8
7
6
5
4
3
2
1
0
0123456789
I (A)
T(AV)
α
360°
TO-220AB 60
Figure 2. Average and D.C. on-state current
versus case temperature
I (A)
T(AV)
14
12
10
8
6
4
2
0
0 25 50 75 100 125
3/12
D.C.
α = 180°
T (°C)
case
Page 4
Characteristics TN12, TS12 and TYNx12 Series
Figure 3. Average and D.C. on-state current
versus ambient temperature (device mounted on FR4 with recommended pad layout) (DPAK)
I (A)
T(AV)
3.0
2.5
2.0
1.5
α = 180°
1.0
0.5
0.0
0 25 50 75 100 125
D.C.
2
DPAK
DPAK
T (°C)
amb
Figure 5. Relative variation of thermal
impedance junction to ambient versus pulse duration (recommended pad layout, FR4 PC board for DPAK)
K=[Z /R
1.00
0.10
0.01
th(j-a) th(j-a)
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
]
2
DPAK
DPAK
t (s)
p
TO-220AB / IPAK
Figure 4. Relative variation of thermal
impedance junction to case versus pulse duration
K=[Z /R
th(j-c) th(j-c)
1.0
0.5
0.2
0.1 1E-3 1E-2 1E-1 1E+0
]
t (s)
p
Figure 6. Relative variation of gate trigger
current and holding current versus junction temperature for TS12 series
I,I,I[T] /
GTHL j
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20 40 60 80 100 120 140
I ,I ,I [T =25°C]
GT H L j
I
GT
T (°C)
j
IH& I
R = 1k
GK
L
Ω
Figure 7. Relative variation of gate trigger
current and holding current versus junction temperature for TN12 and TYNx12 series
I,I,I[T] /
GT H L j
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20 40 60 80 100 120 140
4/12
I ,I ,I [T =25°C]
GT H L j
I
GT
T (°C)
j
IH& I
L
Figure 8. Relative variation of holding
current versus gate-cathode resistance (typical values) for TS12 series
I [R ] / I [ =1k ]
HGK HΩRGK
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 1E-2 1E-1 1E+0 1E+1
R(k)GKΩ
Tj= 25°C
Page 5
TN12, TS12 and TYNx12 Series Characteristics
Figure 9. Relative variation of dV/dt immunity
versus gate-cathode resistance (typical values) for TS12 series
dV/dt[R ] / dV/dt[ =220 ]
10.0
1.0
0.1
GK
0 200 400 600 800 1000 1200
GK
ΩR
R(k)GKΩ
Tj= 125°C
V = 0.67 x V
D DRM
Figure 11. Surge peak on-state current versus
number of cycles
I (A)
TSM
150 140 130 120 110 100
90 80 70 60 50 40 30 20 10
0
1 10 100 1000
TS12
Repetitive T =105°C
C
TN12 / TYN12
Non repetitive T initial=25°C
j
Number of cycles
t =10ms
p
One cycle
Figure 10. Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical values) for TS12 series
dV/dt[C ] / dV/dt[ =220 ]GKΩR
4.0
V = 0.67 x V
D DRM
T
= 125°C
j
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125 150
R = 220
GK
Ω
GK
C (nF)
GK
Figure 12. Non-repetitive surge peak on-state
current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t
TSM
22
dI/dt limitation
I
TSM
t (ms)
p
TS12
2
I t
TN12 / TYN12
TN12 / TYN12
T initial = 25°C
j
TS12
I (A), I t (A s)
2000
1000
100
10
0.01 0.10 1.00 10.00
Figure 13. On-state characteristics (maximum
values)
I (A)
TM
200
T max.:
j
V =0.85V
100
t0
R =30m
Ω
d
Tj=max
10
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T =25°C
j
V (V)
TM
Figure 14. Thermal resistance junction to
ambient versus copper surface under tab (epoxy printed circuit board FR4, copper thickness: 35 µm) (DPAK and D
R (°C/W)
th(j-a)
100
80
60
40
20
0
0 2 4 6 8 101214161820
5/12
2
DPAK
DPAK
S(cm²)
2
PAK )
Page 6
Ordering information scheme TN12, TS12 and TYNx12 Series

2 Ordering information scheme

Figure 15. TN12 series

TN 12 15 - 600 B (-TR)
Standard SCR series
Current
12 = 12 A
Sensitivity
15 = 15 mA
Voltage
600 = 600 V 800 = 800 V
1000 = 1000 V
Packag e
B = DPAK
2
G = D PAK H = IPAK
Packing mode
Blanck = Tube
-TR = Tape and Reel (DPAK and

Figure 16. TS12 series

2
D PAK)
Sensitive SCR series
Current
12 = 12 A
Sensitivity
20 = 200 µA
Voltage
600 = 600 V 700 = 700 V
Packag e
B = DPAK H = IPAK
Packing mode
Blanck = Tube
-TR = Tape and Reel

Figure 17. TYNx12 series

Standard SCR series
Voltage
10 = 1000 V
Current
12 = 12 A
Sensitivity
Blanck = 15 mA T = 5 mA
Packing mode
RG = Tube
6 = 600 V 8 = 800 V
TS 12 20 - 600 B (-TR)
TYN 6 12 T RG
6/12
Page 7
TN12, TS12 and TYNx12 Series Package information

Table 5. Product selector

Voltage (xxx)
Part Numbers
Sensitivity Package
600 V 700 V 800 V 1000 V
TN1215-xxxB X X 15 mA DPAK
2
TN1215-xxxG X X 15 mA D
PA K
TN1215-xxxH X X 15 mA IPAK
TS1220-xxxB X X 0.2 mA DPAK
TS1220-xxxH X 0.2 mA IPAK
TYNx12 X X X 15 mA TO-220AB
TYNx12T X X X 5 mA TO-220AB

3 Package information

Epoxy meets UL94, V0

Table 6. TO-220AB dimensions

Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
B
Ø I
L
A
I4
l3
a1
l2
a2
C
b2
c2
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
F
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
M
c1
b1
e
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M2.60 0.102
7/12
Page 8
Package information TN12, TS12 and TYNx12 Series

Table 7. IPAK dimensions

Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 2.20 2.40 0.086 0.094
A1 0.90 1.10 0.035 0.043
A3 0.70 1.30 0.027 0.051
A
E
B2
L2
C2
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
B3 0.95 0.037
B5 0.30 0.035
D
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.019 0.023
H
L1
L
B3
B
V1
A1
D 6 6.20 0.236 0.244
E 6.40 6.60 0.252 0.260
e2.28 0.090
B5
e
G
C
A3
G 4.40 4.60 0.173 0.181
H 16.10 0.634
L 9 9.40 0.354 0.370
L1 0.8 1.20 0.031 0.047
L2 0.80 1 0.031 0.039
8/12
V1 10° 10°
Page 9
TN12, TS12 and TYNx12 Series Package information

Table 8. DPAK dimensions

Dimensions
Ref.
Min. Max. Min. Max.
A 2.20 2.40 0.086 0.094
E
B2
L2
H
L4
B
G
A1
A
C2
R
D
R
C
A1 0.90 1.10 0.035 0.043
A2 0.03 0.23 0.001 0.009
B 0.64 0.90 0.025 0.035
B2 5.20 5.40 0.204 0.212
C 0.45 0.60 0.017 0.023
C2 0.48 0.60 0.018 0.023
D 6.00 6.20 0.236 0.244
E 6.40 6.60 0.251 0.259
0.60 MIN.
A2
G 4.40 4.60 0.173 0.181
H 9.35 10.10 0.368 0.397
V2
L2 0.80 typ. 0.031 typ.
L4 0.60 1.00 0.023 0.039
V2

Figure 18. DPAK footprint dimensions (in millimeters)

Millimeters Inches
6.7
6.7 3 3
1.6
2.3
2.3
1.6
9/12
Page 10
Package information TN12, TS12 and TYNx12 Series
D
Table 9. D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
2mm min. FLAT ZONE
Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181
A
C2
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
A2
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
V2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2

Figure 19. D2PAK footprint dimensions (in millimeters)

16.90
10.30
8.90
3.70
5.08
1.30
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
10/12
Page 11
TN12, TS12 and TYNx12 Series Ordering information

4 Ordering information

Ordering type
(1)
Marking
TN1215-x00B TN1215x00 DPAK 0.3 g 75 Tube
TN1215-x00B-TR TN1215x00 DPAK 0.3 g 2500 Tape and reel
TN1215-x00G TN1215x00G D
TN1215-x00G-TR TN1215x00G D
TN1215-x00H TN1215x00 IPAK 0.3 g 75 Tube
TS1220-x00B TS1220x00 DPAK 0.3 g 75 Tube
TS1220-x00B-TR TS1220x00 DPAK 0.3 g 2500 Tape and reel
TS1220-x00H TS1220x00 IPAK 0.3 g 75 Tube
TYNx12RG TYNx12 TO-220AB 2.3 g 50 Tube
TYNx12TRG TYNx12T TO-220AB 2.3 g 50 Tube
1. x (6, 7, 8, 10) depends upon voltage
(1)
Package Weight Base qty Delivery mode
2
PAK 1.5 g 50 Tube
2
PAK 1.5 g 1000 Tape and reel

5 Revision history

Date Revision Description of Changes
Sep-2000 3 Last update.
25-Mar-2005 4 TO-220AB delivery mode changed from bulk to tube.
14-Oct-2005 5
08-Mar-2007 6
Changed sensitivity values in Ta bl e 5 for TYNx12 (30 to 15 mA) and TYNx12T ( 15 to 5 mA). Added ECOPACK statement.
Reformatted to current standard.
Figure 15: TN12 series product name corrected. Figure 16: TS12 series product name corrected.
11/12
Page 12
TN12, TS12 and TYNx12 Series
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