Datasheet TS514AIN, TS514AID, TS514 Datasheet (SGS Thomson Microelectronics)

QUAD OPERATIONAL AMPLIFIERS

.

LOW OFFSETVOLTAGE: 500µVmax.

.

LOW POWERCONSUMPTION

.

SHORT CIRCUIT PROTECTION

.

LOW DISTORTION, LOW NOISE

.

HIGHGAIN-BANDWIDTHPRODUCT

.

HIGHCHANNEL SEPARATION

.

ESD INTERNALPROTECTION

.

MACROMODEL INCLUDED IN THIS
SPECIFICATION

DESCRIPTION

The TS514is ahighperformancequadoperational
amplifier with frequencyand phase compensation
builtintothechip.Theinternalphasecompensation
allows stable operationas voltagefollowerin spite
of its high gain-bandwidthproducts.

The circuit presents very stable electrical charac­teristics over the entire supply voltage range, and
it particularlyintendedfor professionalandtelecom
applications(active filters, etc).

TS514,A

HIGH SPEED PRECISION

N

DIP14

(Plastic Package)

ORDER CODES

Part Number Temperature Range

TS514I -40
TS514AI -40

(Plastic Micropackage)

o

C, +125oC ••

o

C, +125oC ••

D

SO14

Package

ND

PINCONNECTIONS (top view)

Output 1

Inverting Input 1

Non-inverting Input 1

Non-inverting Input 2

Inverting Input 2

Output2

December 1997

1

2

-

+

3

+

CC

4

5

+

-

6

7

V

14

Output 4

Inverting Input 4

13

-

+

+

-

Non-inverting Input 4

12

-

V

11

CC

Non-inverting Input 3

10

Inverting Input 3

9

8

Output 3

1/7

TS514,A

SCHEMATIC DIAGRAM (1/2 TS514)

Q17

R5

D3

D4

Q1

Q7

Q2

Q18

Q21

R8

Q3

Q19

Q22

R1

D6

Inverting

input

D1

Q8

D5

C2

Q10

R9

Non-inverting

R2

Q4

Q11

Q23

R10

input

D7

C1

Q9

Q20

Q5

R3

Q6

Q15

R4

D2

Q12

8

Q13

Q14

R6

Output

R7

Q16

4

ABSOLUTEMAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

T

P

T

2/7

Supply Voltage ±18 V

CC

Input Voltage (positive)

V

i

Differential Input Voltage ± (VCC-1)

id

Operating Temperature Range -40 to +125

oper

Power Dissipation at T

tot

Storage Temperature -65to 150

stg

(negative)

=70oC 400 mW

amb

+V

CC

-VCC- 0.5

V

o

C

o

C

TS514,A

ELECTRICALCHARACTERISTICS (VCC= ±15V,T

= 25oC, unless otherwise specified)

amb

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

R

V

DV

I

DI

I

A

Supply Current 1.4 2.4 mA

CC

Input Bias Current 50 150 nA

I

ib

T

min.<Top<Tmax

Input Resistance f = 1kHz 1 MΩ

i

Input Offset Voltage TS514

io

T

min.<Top<Tmax

Input Offset Voltage Drift T

io

Input Offset Current 5 20 nA

io

Input Offset Current Drift T

io

Output Short Circuit Current 23 mA

os

Large SignalVoltage Gain RL=2kΩ VCC= ±15V

vd

.<Top<T

min

.<Top<T

T

min

.<Top<T

min

. 300 nA

0.5 2.5

TS514A

. TS514

TS514A

.5µV/oC

max

.40nA

max

. 0.08 nA

max

90 100

= ±4V

V

CC

95

0.5
4

1.5

GBP Gain-bandwidth Product f = 100kHz 1.8 3 MHz

e

THD Total Harmonic Distortion A

±V

V

Equivalent Input Noise Voltage f = 1kHz

n

Output Voltage Swing RL=2kΩ VCC= ±15V

opp

Large SignalVoltage Swing RL= 10kΩ f = 10kHz 28 V

opp

=50Ω

R

s

=1kΩ

R

s

= 10kΩ

R

s

= 20dB RL=2kΩ

V

=2VPPf = 1kHz

V

O

V

CC

= ±4V

8
10
18

0.03 0.1 %

±13

±3

15

√Hz

SR Slew Rate Unity Gain, RL=2kΩ 0.8 1.5 V/µs

CMR Common Mode Rejection Ratio V

SVR Supply Voltage Rejection Ratio V

V

O1/VO2

Channel Separation f = 1kHz 100 120 dB

= 10V 90 dB

ic

= 1V f = 100Hz 90 dB

ic

mV

mV

°C

dB

nV

V

PP

3/7

TS514,A

.

SINGLEOR SPLIT SUPPLYOPERATION

.

LOW POWERCONSUMPTION

.

SHORT CIRCUIT PROTECTION

Applies to : TS514i,AI

** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVEPOWER SUPPLY

.SUBCKT TS514 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.647807E-16 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 52 5 1
EIN 16 5 1 5 1
RIP 10 11 1.300000E+01
RIN 15 16 1.300000E+01
RIS 11 15 6.437882E+01
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0
VOFN 13 14 DC 0
IPOL 13 52.000000E-05
CPS 11 15 9.75E-10
DINN 17 13 MDTH 400E-12
VIN 17 5 0.000000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 1.500000E+00
FCP 4 5 VOFP 1.525000E+01
FCN 5 4 VOFN 1.525000E+01
FIBP 2 5 VOFN 5.000000E-03
FIBN 5 1 VOFP 5.000000E-03

.

LOW DISTORTION,LOW NOISE

.

HIGHGAIN-BANDWIDTHPRODUCT

.

HIGHCHANNELSEPARATION

* AMPLIFYING STAGE
FIP 5 19 VOFP 1.125000E+03
FIN 5 19 VOFN 1.125000E+03
RG1 19 5 6.512062E+05
RG2 19 4 6.512062E+05
CC 19 29 1.500000E-08
HZTP 30 29 VOFP 8.944787E+02
HZTN 5 30 VOFN 8.944787E+02
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 6.521739E+03
VIPM 28 4 1.500000E+02
HONM 21 27 VOUT 6.521739E+03
VINM 5 27 1.500000E+02
GCOMP 5 4 4 5 7.485029E-04
RPM1 5 80 1E+09
RPM2 4 80 1E+09
GAVPH 5 82 19 80 2.99E-03
RAVPHGH 82 4 668
RAVPHGB 82 5 668
RAVPHDH 82 83 1000
RAVPHDB 82 84 1000
CAVPHH 4 83 0.352E-09
CAVPHB 5 84 0.352E-09
EOUT 26 23 82 5 1
VOUT 23 5 0
ROUT 26 3 150
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.785252E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.785252E+00
.ENDS

4/7

ELECTRICALCHARACTERISTICS

= ±15V, T

V

CC

Symbol Conditions Value Unit

V

io

A

vd

I

CC

V

icm

V

OH

V

OL

I

sink

I

source

GBP R

SR R

_∅mR

=25oC (unless otherwise specified)

amb

0mV
RL=2kΩ 94 V/mV
No load, per operator 325 µA

-15 to 13.5 V
RL=2kΩ +13 V
RL=2kΩ -13 V
VO=0V 24 mA
VO=0V 24 mA

=2k

Ω,

L
L
L

CL= 100pF 3 MHz

=2k

Ω,

CL= 100pF 1.4 V/µs

=2k

Ω,

CL= 100pF 55 Degrees

TS514,A

5/7

TS514,A

PACKAGE MECHANICALDATA

14 PINS - PLASTICDIP

Dim.

a1 0.51 0.020

B 1.39 1.65 0.055 0.065
b 0.5 0.020

b1 0.25 0.010

D 20 0.787
E 8.5 0.335
e 2.54 0.100

e3 15.24 0.600

F 7.1 0.280

i 5.1 0.201
L 3.3 0.130
Z 1.27 2.54 0.050 0.100

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

6/7

PACKAGE MECHANICALDATA

14 PINS - PLASTICMICROPACKAGE(SO)

TS514,A

Dim.

Min. Typ. Max. Min. Typ. Max.

Millimeters Inches

A 1.75 0.069

a1 0.1 0.2 0.004 0.008
a2 1.6 0.063

b 0.35 0.46 0.014 0.018

b1 0.19 0.25 0.007 0.010

C 0.5 0.020

c1 45

o

(typ.)
D 8.55 8.75 0.336 0.334
E 5.8 6.2 0.228 0.244
e 1.27 0.050

e3 7.62 0.300

F 3.8 4.0 0.150 0.157

G 4.6 5.3 0.181 0.208

L 0.5 1.27 0.020 0.050

M 0.68 0.027

S8

Information furnishedis believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement ofpatents orother rights of third parties which may result
from its use. No license isgranted byimplication or otherwise underany patent or patentrights ofSGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previouslysupplied. SGS-THOMSONMicroelectronics productsare not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.

o

(max.)

 1997 SGS-THOMSON Microelectronics – Printed in Italy– All Rights Reserved

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