Datasheet TS512IN, TS512ID, TS512AIN, TS512AID, TS512 Datasheet (SGS Thomson Microelectronics)
Page 1
DUALOPERATIONAL AMPLIFIERS
.
LOW OFFSETVOLTAGE: 500µVmax.
.
LOW POWERCONSUMPTION
.
SHORT CIRCUIT PROTECTION
.
LOW DISTORTION, LOW NOISE
.
HIGHGAIN-BANDWIDTH PRODUCT
.
HIGHCHANNEL SEPARATION
.
ESD INTERNALPROTECTION
.
MACROMODEL INCLUDED IN THIS
SPECIFICATION
DESCRIPTION
The TS512 is a high performancedual operational
amplifier with frequencyand phase compensation
builtintothechip.Theinternalphasecompensation
allows stable operationas voltagefollowerin spite
of its high gain-bandwidthproducts.
The circuit presents very stable electrical characteristics over the entire supply voltage range, and
is particularlyintendedforprofessionalandtelecom
applications(activefilter, etc).
TS512,A
HIGH SPEED PRECISION
N
DIP8
(Plastic Package)
ORDER CODES
Part Number Temperature Range
TS512I -40, +125
TS512AI -40, +125
(Plastic Micropackage)
D
SO8
o
C ••
o
C ••
Package
ND
PINCONNECTIONS (top view)
Output 1
Inverting Input 1
Non-inverting Input 1
V
CC
March 1998
1
2
3
-
4
-
+
-
+
8
7
6
5
+
V
CC
Output
Inverting Input 2
Non-inverting Input 2
Page 2
TS512,A
SCHEMATIC DIAGRAM (1/2 TS512)
Q17
R5
D3
D4
Q1
Q7
Q2
Q18
Q21
R8
Q3
Q19
Q22
R1
D6
Inverting
input
D1
Q8
D5
C2
Q10
R9
Non-inverting
R2
Q4
Q11
Q23
R10
input
D7
C1
Q9
Q20
Q5
R3
Q6
Q15
R4
D2
Q12
8
Q13
Q14
R6
Output
R7
Q16
4
ABSOLUTEMAXIMUM RATINGS
Symbol Parameter Value Unit
Supply Voltage ±18 V
Input Voltage ±V
i
CC
Differential Input Voltage ± (VCC-1)
Operating Free Air Temperature Range -40 to +125
Power Dissipation at T
Junction Temperature 150
j
=70oC 500 mW
amb
Storage Temperature Range -65 to +150
2/7
V
CC
V
V
id
T
oper
P
tot
T
T
stg
o
C
o
C
o
C
Page 3
TS512,A
ELECTRICAL CHARACTERISTICS (VCC= ±15V,T
= 25oC, unless otherwise specified)
amb
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
V
DV
I
DI
I
A
Supply Current 0.7 1.2 mA
CC
Input Bias Current 50 150 nA
I
ib
T
min.<Top<Tmax
Input Resistance f = 1kHz 1 MΩ
i
Input Offset Voltage TS512
io
T
.<Top<T
min
Input Offset Voltage Drift T
io
Input Offset Current 5 20 nA
io
Input Offset Current Drift T
io
Output Short Circuit Current 23 mA
os
Large Signal Voltage Gain RL=2kΩ VCC= ±15V
vd
.<Top<T
min
.<Top<T
T
min
.<Top<T
min
. 300 nA
0.5 2.5
TS512A
. TS512
max
TS512A
.2µV/oC
max
.40nA
max
. 0.08 nA
max
90 100
= ±4V
V
CC
95
0.5
3.5
1.5
GBP Gain-bandwidth Product f = 100kHz 1.8 3 MHz
e
THD Total Harmonic Distortion AV= 20dB RL=2kΩ
±V
V
Equivalent Input Noise Voltage f = 1kHz
n
R
R
R
s
s
s
=50Ω
=1kΩ
= 10kΩ
8
10
18
0.03 0.1 %
=2V
V
O
PP
Output Voltage Swing RL=2kΩ VCC= ±15V
opp
Large Signal Voltage Swing RL= 10kΩ f = 10kHz 28 V
opp
f = 1kHz
= ±4V
V
CC
±13
±3
15
√Hz
SR Slew Rate Unity Gain, RL=2kΩ 0.8 1.5 V/µs
CMR Common Mode Rejection Ratio V
SVR Supply Voltage Rejection Ratio V
V
O1/VO2
Channel Separation f= 1kHz 100 120 dB
= 10V 90 dB
ic
= 1V f = 100Hz 90 dB
ic
mV
mV
°C
dB
nV
V
PP
3/7
Page 4
TS512,A
.
LOW OFFSETVOLTAGE : 500µV max.
.
LOW POWERCONSUMPTION
.
SHORT CIRCUIT PROTECTION
Applies to : TS512I,AI
** Standard Linear Ics Macromodels, 1993.
** CONNECTIONS :
* 1 INVERTING INPUT
* 2 NON-INVERTING INPUT
* 3 OUTPUT
* 4 POSITIVEPOWER SUPPLY
* 5 NEGATIVE POWER SUPPLY
.SUBCKT TS512 1 3 2 4 5 (analog)
**********************************************************
.MODEL MDTH D IS=1E-8 KF=6.565195E-17 CJO=10F
* INPUT STAGE
CIP 2 5 1.000000E-12
CIN 1 5 1.000000E-12
EIP 10 5 2 5 1
EIN 16 5 1 5 1
RIP 10 11 2.600000E+01
RIN 15 16 2.600000E+01
RIS 11 15 1.061852E+02
DIP 11 12 MDTH 400E-12
DIN 15 14 MDTH 400E-12
VOFP 12 13 DC 0
VOFN 13 14 DC 0
IPOL 13 5 1.000000E-05
CPS 11 15 12.47E-10
DINN 17 13 MDTH 400E-12
VIN 17 5 1.500000e+00
DINR 15 18 MDTH 400E-12
VIP 4 18 1.500000E+00
FCP 4 5 VOFP 3.400000E+01
FCN 5 4 VOFN 3.400000E+01
FIBP 2 5 VOFN 1.000000E-02
.
LOW DISTORTION,LOW NOISE
.
HIGHGAIN-BANDWIDTH PRODUCT
.
HIGHCHANNEL SEPARATION
FIBN 5 1 VOFP 1.000000E-02
* AMPLIFYING STAGE
FIP 5 19 VOFP 9.000000E+02
FIN 5 19 VOFN 9.000000E+02
RG1 19 5 1.727221E+06
RG2 19 4 1.727221E+06
CC 19 5 6.000000E-09
DOPM 19 22 MDTH 400E-12
DONM 21 19 MDTH 400E-12
HOPM 22 28 VOUT 6.521739E+03
VIPM 28 4 1.500000E+02
HONM 21 27 VOUT 6.521739E+03
VINM 5 27 1.500000E+02
GCOMP 5 4 4 5 6.485084E-04
RPM1 5 80 1E+06
RPM2 4 80 1E+06
GAVPH 5 82 19 80 2.59E-03
RAVPHGH 82 4 771
RAVPHGB 82 5 771
RAVPHDH 82 83 1000
RAVPHDB 82 84 1000
CAVPHH 4 83 0.331E-09
CAVPHB 5 84 0.331E-09
EOUT 26 23 82 5 1
VOUT 23 5 0
ROUT 26 3 6.498455E+01
COUT 3 5 1.000000E-12
DOP 19 25 MDTH 400E-12
VOP 4 25 1.742230E+00
DON 24 19 MDTH 400E-12
VON 24 5 1.742230E+00
.ENDS
4/7
Page 5
ELECTRICALCHARACTERISTICS
=±15V, T
V
CC
Symbol Conditions Value Unit
V
io
A
vd
I
CC
V
icm
V
OH
V
OL
I
sink
I
source
GBP R
SR R
∅mR
=25oC (unlessotherwisespecified)
amb
0mV
RL=2kΩ 100 V/mV
No load, per operator 350 µA
-13.5 to 13.5 V
RL=2kΩ +13 V
RL=2kΩ -13 V
VO=0V 23 mA
VO=0V 23 mA
=2k
Ω,
L
L
L
CL= 100pF 3 MHz
=2kΩ 1.4 V/ms
=2k
Ω,
CL= 100pF 55 Degrees
TS512,A
5/7
Page 6
TS512,A
PACKAGE MECHANICAL DATA
8 PINS - PLASTICDIP
Dim.
A 3.32 0.131
a1 0.51 0.020
B 1.15 1.65 0.045 0.065
b 0.356 0.55 0.014 0.022
b1 0.204 0.304 0.008 0.012
D 10.92 0.430
E 7.95 9.75 0.313 0.384
e 2.54 0.100
e3 7.62 0.300
e4 7.62 0.300
F 6.6 0260
i 5.08 0.200
L 3.18 3.81 0.125 0.150
Z 1.52 0.060
Min. Typ. Max. Min. Typ. Max.
Millimeters Inches
6/7
Page 7
PACKAGE MECHANICAL DATA
8 PINS - PLASTICMICROPACKAGE (SO)
TS512,A
Dim.
Min. Typ. Max. Min. Typ. Max.
Millimeters Inches
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45
o
(typ.)
D 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024
S8
Information furnished is believed tobe accurate and reliable. However,SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of useofsuch information norfor any infringement ofpatents or other rights ofthird partieswhichmay result
from itsuse.Nolicense isgranted by implicationorotherwise under any patent or patentrights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.SGS-THOMSON Microelectronics products are notauthorizedfor use as criticalcomponents inlife
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
o
(max.)
1998 SGS-THOMSON Microelectronics– Printed in Italy – All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands- Singapore - Spain -Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
7/7
Loading...