Very low dropout voltage/quiescent
current 10 V voltage regulator
Preliminary specification
File under Integrated Circuits, IC01
2000 Apr 26
Page 2
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
FEATURES
• Fixed 10 V, 100 mA regulator
• Supply voltage range up to 33 V (45 V)
• Very low quiescent current of 15 µA (typical value)
• Very low dropout voltage
• High ripple rejection
• Very high stability:
– Electrolytic capacitors:Equivalent Series Resistance
(ESR) < 30 Ω at I
– Other capacitors: 100 nFat 200 µA ≤ I
≤ 25 mA (see Fig.6)
REG
REG
≤ 100 mA.
• Pin compatible family TDA3662 to TDA3666
• Protections:
– Reverse polarity safe (down to −25 V without high
reverse current)
– Negative transient of 50 V (RS=10Ω and
t < 100 ms)
– Able to withstand voltages up to 18 V at the output
– ESD protection on all pins
– DC short-circuit safe to ground and VP of the
– Temperature protection (at Tj> 150 °C).
GENERAL DESCRIPTION
The TDA3666 isa fixed 10 V voltage regulatorwith a very
lowdropoutvoltageandquiescentcurrent,whichoperates
over a wide supply voltage range.
The IC is available as:
• TDA3666: VP≤ 45 V; −40 °C ≤ T
SO4 package (automotive)
• TDA3666AT: VP≤ 45 V; −40 °C ≤ T
SO8 package (automotive).
(supply line may be short-circuited)
regulator output
amb
amb
TDA3666
≤ +125 °C and
≤ +125 °C and
QUICK REFERENCE DATA
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
Supply
V
P
input supply voltageregulator on
TDA3666314.445V
TDA3666AT314.445V
I
q
quiescent supply currentVP= 14.4 V; I
=0mA−1530µA
REG
Voltage regulator
V
REG
V
REG(drop)
output voltage13 V ≤ VP≤ 22 V; I
13 V ≤ V
V
P
0.5 mA ≤ I
dropout voltageVP= 9.3 V; I
T
amb
P
= 14.4 V;
≤ 85 °C
≤ 45 V; I
≤ 100 mA
REG
REG
= 0.5 mA9.51010.5V
REG
= 0.5 mA9.41010.6V
REG
9.41010.6V
= 50 mA;
−0.180.3V
ORDERING INFORMATION
TYPE
NUMBER
NAMEDESCRIPTIONVERSION
PACKAGES
TDA3666SO4plastic small outline package; 4 leads; body width 3.5 mmSOT223-1
TDA3666ATSO8plastic small outline package; 8 leads; body width 3.9 mmSOT96-1
2000 Apr 262
Page 3
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
BLOCK DIAGRAM
handbook, halfpage
1 (8)
V
P
REGULATOR
BAND GAP
TDA3666
PROTECTION
2, 4 (2, 3, 6, 7)
GND
THERMAL
3 (1)
MBL130
TDA3666
REG
Pin numbers in brackets refer to the SO8 version.
Fig.1 Block diagram.
PINNING
PIN
SYMBOL
DESCRIPTION
SO4SO8
V
P
18supply voltage
GND2 and 42, 3, 6 and 7ground; note 1
REG31regulator output
n.c.−4 and 5not connected
Note
1. For the SO8 package all pins GND are connected to the lead frame and can also be used to reduce the total thermal
resistance R
by soldering these pins to a ground plane. The ground plane on the top side of the PCB acts like a
th(j-a)
heat spreader.
2000 Apr 263
Page 4
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
handbook, halfpage
GND
4
TDA3666
132
V
P
GND
REG
MGU151
handbook, halfpage
REG
GND
n.c.
1
2
TDA3666AT
3
4
MBL129
TDA3666
V
8
P
GNDGND
7
GND
6
n.c.
5
Fig.2 Pin configuration of SO4.
FUNCTIONAL DESCRIPTION
The TDA3666 is a fixed 10 V regulator which can deliver
output currents up to 100 mA. The regulator is available in
SO8 and SO4 packages. The regulator is intended for
portable, mains, telephone and automotive applications.
To increase the lifetime of batteries, a specially built-in
clamp circuit keeps the quiescent current of this regulator
very low, also in dropout and full load conditions.
Theregulatorremainsoperationaldown to very low supply
voltages and below this voltage it switches off.
Fig.3 Pin configuration of SO8.
Atemperatureprotectioncircuitisincludedwhichswitches
the regulator output off at a junction temperature
above 150 °C.
A new output circuit guarantees the stability of the
regulator for a capacitor output circuit with an ESR up
to 22 Ω (see Figs 5 and 6). This is very attractive as the
ESR of an electrolytic capacitor increases strongly at low
temperatures (no expensive tantalum capacitor is
required).
2000 Apr 264
Page 5
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
TDA3666
10 V voltage regulator
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT
V
P
V
P(rp)
P
tot
T
stg
T
amb
T
j
supply voltage
TDA3666−45V
TDA3666AT−45V
reverse polarity supply voltagenon-operating−−25V
total power dissipation
=25°C; measured with test circuit (see Fig.4); unless otherwise specified.
amb
P
supply voltageregulator operating; note 1
TDA3666314.445V
TDA3666AT314.445V
quiescent supply currentVP= 4.5 V; I
V
= 14.4 V; I
P
9.5 V ≤ V
9.5 V ≤ V
P
P
output voltage13 V ≤ VP≤ 22 V; I
0.5 mA ≤ I
T
≤ 125 °C
amb
11 V ≤ V
T
amb
P
≤ 125 °C
dropout voltageVP= 9.3 V; I
T
≤ 85 °C
amb
=0mA−10−µA
REG
=0mA−1530µA
REG
≤ 22 V; I
≤ 22 V; I
≤ 100 mA;
REG
≤ 45 V; I
REG
=10mA −0.20.5mA
REG
=50mA −1.42.5mA
REG
= 0.5 mA 9.51010.5V
REG
9.41010.6V
= 0.5 mA
REG
=50mA;
9.41010.6V
−0.180.3V
output voltage long-term stability−20−mV/1000 h
line regulation voltage12 V ≤ VP≤ 22 V; I
12 V ≤ V
load regulation voltage0.5 mA ≤ I
T
amb
= 120 Hz;
i
V
i(ripple)
I
REG
output current limitV
output leakage current at
REG
VP= −15 V; V
≤ 45 V; I
P
≤ 100 mA;
REG
≤ 125 °C
= 1 V (RMS);
= 0.5 mA
> 9.3 V0.170.25−A
REG
= 0.5 mA −130mV
REG
= 0.5 mA −150mV
REG
−1050mV
5060−dB
≤ 0.3 V−1500µA
reverse polarity
Notes
1. The regulator output will follow V
if VP<V
P
REG+VREG(drop)
.
2. Limiting values as applicable for both device types: VP≤ 45 V and −40 °C ≤ T
2000 Apr 266
≤ +125 °C.
amb
Page 7
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
TEST AND APPLICATION INFORMATION
handbook, halfpage
V
P
C1
1 µF
C1 is optional (to minimize supply noise only).
13
TDA3666
2, 4
Fig.4 Test circuit (SO4).
MBL131
C2
10 µF
V
REG
= 10 V
TDA3666
2
10
handbook, halfpage
ESR
(Ω)
10
1
−1
10
10
(1) Maximum ESR at 200 µA ≤ I
(2) Minimum ESR only when I
(2)
−1
(1)
stable region
11010
≤ 100 mA.
REG
≤ 200 µA.
REG
Fig.5Graph for selecting the value of the output
capacitor.
MDA961
C2 (µF)
2
Noise
The output noise is determined by the value of the output
capacitor. The noise figure is measured at a bandwidth of
10 Hz to 100 kHz (see Table 1).
Table 1 Noise figures
OUTPUT
NOISE FIGURE (µV)
CURRENT
I
REG
(mA)
C2 = 10 µFC2=47µF C2 = 100 µF
0.5550320300
50650400400
Stability
The regulator is stabilized with an external capacitor
connectedto the output. The value of thiscapacitor can be
selected using the diagrams shown in Figs 5 and 6.
The following four examples show the effects of the
stabilization circuit using different values for the output
capacitor.
3
10
handbook, halfpage
ESR
(Ω)
2
10
22
10
1
−1
10
11010
stable region
Fig.6ESR as a function of I
value of the output capacitor.
MDA962
2
10
I
(mA)
REG
for selecting the
REG
3
2000 Apr 267
Page 8
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
EXAMPLE 1
The regulator is stabilized with an electrolytic capacitor of
68 µF (ESR = 0.5 Ω). At T
value is decreased to 22 µF and the ESR is increased
to 3.5 Ω. The regulator will remain stable at a temperature
of T
amb
= −40 °C.
EXAMPLE 2
The regulator is stabilized with an electrolytic capacitor of
10 µF (ESR = 3.3 Ω). At T
value is decreased to 3 µF and the ESR is increased
to 20 Ω. The regulator will remain stable at a temperature
of T
amb
= −40 °C.
EXAMPLE 3
The regulator is stabilized with a 100 nF MKT capacitor
connected to the output. When the output current is over
200 µA full stability is guaranteed.
Because the thermal influence on the capacitor value is
almost zero, the regulator will remain stable at a
temperature of T
amb
= −40 °C.
= −40 °C, the capacitor
amb
= −40 °C, the capacitor
amb
TDA3666
Application circuit with backup function
Sometimes a backup function is needed to supply, for
example, a microcontroller for a short period of time when
the supply voltage spikes to 0 V (or even −1 V).
Thisfunction can easily be built with the TDA3666 by using
an output capacitor with a large value. When the supply
voltage is 0 V (or −1 V), only a small current will flow into
pin REG from this output capacitor (a few µA).
The application circuit is given in Fig.7.
handbook, halfpage
V
P
C1
1 µF
13
TDA3666
C2
V
REG
= 10 V
EXAMPLE 4
The regulator is stabilized with a 100 nF capacitor in
parallelwith an electrolytic capacitor of 10 µF connected to
the output.
The regulator is now stable under all conditions and
independent of:
• The ESR of the electrolytic capacitor
• The value of the electrolytic capacitor
• The output current.
Application circuits
The maximum output current of the regulator equals:
current equals 140 mA.
The total thermal resistance of the TDA3666 can be
decreased from 125 to 50 K/W for the SO8 version. For
the SO4 version it can be decreased from 100 to 40 K/W
when GND pins 2 and 4 of the package are soldered to
the printed-circuit board.
This section gives typical curves for various parameters measured on the TDA3666AT. Standard test conditions are:
VP= 14.4 V; T
25
handbook, halfpage
I
q
(µA)
20
15
10
5
0
010
amb
=25°C.
MDA947
2030
V
(V)
P
handbook, halfpage
4
I
q
(mA)
3
2
1
0
01050
2030
40
MDA949
VP (V)
I
= 0 mA.
REG
Fig.8Quiescent current as a function of the
supply voltage.
handbook, halfpage
2
I
q
(mA)
1.5
1
0.5
0
−400
(1) Iqat 50 mA load.
(2) Iqat 10 mA load.
(1)
(2)
4080
120
MDA951
Tj (°C)
160
Fig.9Quiescent current increase as a function of
high supply voltage.
0.48
handbook, halfpage
I
q
(mA)
0.44
0.40
0.36
5
I
= 10 mA.
REG
1015
MDA948
VP (V)
2520
Fig.10 Quiescent current as a function of the
junction temperature.
2000 Apr 269
Fig.11 Quiescent current as a function of the
supply voltage.
Page 10
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
MDA950
VP (V)
2520
I
q
(mA)
1.8
1.6
1.4
2
5
handbook, halfpage
1015
handbook, halfpage
4
I
q
(mA)
3
2
1
0
020100
4060
TDA3666
MDA952
80
I
(mA)
REG
I
= 50 mA.
REG
Fig.12 Quiescent current as a function of the
supply voltage.
10.10
handbook, halfpage
V
REG
(V)
10.05
10.00
9.95
−50200
050
100150
MGU152
T
(
°C)
j
Fig.13 Quiescent current as a function of the
output current.
12
handbook, halfpage
V
REG
(V)
9
6
3
0
−50200
050
100150
MGU153
T
(
°C)
j
I
= 0 mA.
REG
Fig.14 Output voltage as a function of the junction
temperature.
2000 Apr 2610
I
= 0 mA.
REG
Fig.15 Output voltage thermal protection as a
function of the junction temperature.
Page 11
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
500
handbook, halfpage
V
REG(drop)
(mV)
400
300
200
100
040
80120
MDA957
I
(mA)
REG
handbook, halfpage
V
REG
(V)
TDA3666
I
REG
MGU154
(mA)
12
9
6
3
0
0
100
200300
Fig.16 Dropout voltage as a function of the output
current.
−30
handbook, halfpage
SVRR
(dB)
−40
−50
(1)
−60
(2)
(3)
−70
10
C2 = 10 µF.
(1) SVRR at RL=10kΩ.
(2) SVRR at RL= 500 Ω.
(3) SVRR at RL= 100 Ω.
2
10
3
10
MDA956
(1)
(2)
(3)
4
10
f (Hz)
VP= 11.5 V and pulsed load.
Fig.17 Foldback protection mode.
5
10
Fig.18 SVRR as a function of the ripple frequency.
2000 Apr 2611
Page 12
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
TDA3666
10 V voltage regulator
PACKAGE OUTLINES
SO4: plastic small outline package; 4 leads; body width 3.5 mmSOT223-1
D
c
y
b
1
4
E
H
E
A
X
v M
A
132
Z
DIMENSIONS (mm are the original dimensions)
A
UNITA
mm
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
max.
1.8
A
0.10
0.02
1
1.7
1.5
e
b
A
0.25
p
3
0.85
0.65
2
b
p
e
1
cD
b
1
3.15
0.35
2.95
0.25
w M
024 mm
scale
(1)
(1)
e
E
6.7
3.7
3.3
2.3
6.3
A
e1H
4.6
7.3
6.7
Q
A
2
A
1
L
L
detail X
LpQywv
L
E
1.02
1.75
0.62
1.0
0.8
0.10.10.2
(A3)
p
Z
1.2
0.7
θ
θ
10°
0°
OUTLINE
VERSION
SOT223-1TO-261
IEC JEDEC EIAJ
REFERENCES
2000 Apr 2612
EUROPEAN
PROJECTION
ISSUE DATE
99-08-04
99-12-15
Page 13
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
SO8: plastic small outline package; 8 leads; body width 3.9 mm
D
c
y
Z
8
5
TDA3666
SOT96-1
E
H
E
A
X
v M
A
A
pin 1 index
1
e
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
1.75
0.069
A1A2A
0.25
1.45
0.10
1.25
0.010
0.057
0.004
0.049
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
UNIT
inches
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
4
w M
b
p
02.55 mm
scale
(1)E(2)
cD
5.0
4.8
0.20
0.19
eHELLpQZywv θ
4.0
1.27
3.8
0.16
0.050
0.15
2
A
6.2
5.8
0.244
0.228
Q
3
A
θ
0.250.10.25
0.010.010.0410.004
0.7
0.3
0.028
0.012
(1)
o
8
o
0
L
p
L
0.7
0.6
0.028
0.024
(A )
1
detail X
1.0
1.05
0.4
0.039
0.016
OUTLINE
VERSION
SOT96-1
IEC JEDEC EIAJ
076E03 MS-012
REFERENCES
2000 Apr 2613
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22
99-12-27
Page 14
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
SOLDERING
Introduction to soldering surface mount packages
Thistext gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
totheprinted-circuitboardby screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Wave soldering
Conventional single wave soldering is not recommended
forsurface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
TDA3666
If wave soldering is used the following conditions must be
observed for optimal results:
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
• Forpackages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Apr 2614
Page 15
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
TDA3666
10 V voltage regulator
Suitability of surface mount IC packages for wave and reflow soldering methods
PACKAGE
BGA, SQFPnot suitablesuitable
HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
, SO, SOJsuitablesuitable
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
The package footprint must incorporate solder thieves downstream and at the side corners.
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
Objective specificationDevelopmentThis data sheet contains the design target or goal specifications for
Preliminary specificationQualificationThisdata sheet contains preliminarydata, and supplementarydata will be
Product specificationProductionThis data sheet contains final specifications. Philips Semiconductors
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation or warranty that such applicationswillbe
suitable for the specified use without further testing or
modification.
PRODUCT
STATUS
DEFINITIONS
product development. Specification may change in any manner without
notice.
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomers using or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of any of these products, conveys no licenceortitle
under any patent, copyright, or mask work right to these
products,andmakesnorepresentationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
(1)
2000 Apr 2616
Page 17
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
NOTES
TDA3666
2000 Apr 2617
Page 18
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
NOTES
TDA3666
2000 Apr 2618
Page 19
Philips SemiconductorsPreliminary specification
Very low dropout voltage/quiescent current
10 V voltage regulator
NOTES
TDA3666
2000 Apr 2619
Page 20
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International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
2000
Internet: http://www.semiconductors.philips.com
69
Printed in The Netherlands753503/25/01/pp20 Date of release: 2000 Apr 26Document order number: 9397 750 06703
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