Datasheet TDA3663AT, TDA3663 Datasheet (Philips)

Page 1
INTEGRATED CIRCUITS
DATA SH EET
TDA3663
Very low dropout voltage/quiescent current 3.3 V voltage regulator
Product specification Supersedes data of 2000 Dec 08 File under Integrated Circuits, IC01
2000 Dec 14
Page 2
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator

FEATURES

Fixed 3.3 V, 100 mA regulator
Supply voltage range up to 45 V
Very low quiescent current of 15 µA (typical value)
Very low dropout voltage
High ripple rejection
Very high stability:
– Electrolytic capacitors:Equivalent Series Resistance
(ESR) < 22 at worst-case condition
– Other capacitors: 100 nFat 200 µA I
REG
100 mA.
Pin compatible family TDA3662 to TDA3666
Protections:
– Reverse polarity safe (down to 25 V without high
reverse current)
– Negative transient of 50 V (RS=10Ω, t < 100 ms)
– Able to withstand voltages up to 18 V at the output
– ESD protection on all pins – DC short-circuit safe to ground and VP of the
– Temperature protection (at Tj> 150 °C).

GENERAL DESCRIPTION

The TDA3663is afixed 3.3 V voltage regulator with a very lowdropoutvoltage and quiescent current, which operates over a wide supply voltage range.
The IC is available as:
TDA3663: VP≤ 45 V, 40 °C T SO4 package (automotive)
TDA3663AT: VP≤ 45 V, 40 °C T SO8 package (automotive).
(supply line may be short-circuited)
regulator output
amb
amb
TDA3663
+125 °C and
+125 °C and

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
input supply voltage regulator on
TDA3663 3 14.4 45 V TDA3663AT 3 14.4 45 V
I
q
quiescent supply current VP= 14.4 V; I
=0mA 15 30 µA
REG
Voltage regulator
V
REG
output voltage 8 V VP≤ 22 V; I
6VV
0.5 mA I
45 V; I
P
REG
100 mA;
= 0.5 mA 3.16 3.3 3.44 V
REG
= 0.5 mA; 3.13 3.3 3.47 V
REG
3.13 3.3 3.47 V
VP= 14.4 V
V
REG(drop)
dropout voltage I
= 50 mA; T
REG
85 °C 0.18 0.3 V
amb

ORDERING INFORMATION

TYPE
NUMBER
NAME DESCRIPTION VERSION
TDA3663 SO4 plastic surface mounted package; collector pad for good heat
PACKAGES
SOT223-1
transfer; 4 leads
TDA3663AT SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
2000 Dec 14 2
Page 3
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator

BLOCK DIAGRAM

handbook, halfpage
1 (8)
V
P
REGULATOR
BAND GAP
TDA3663
PROTECTION
2, 4 (2, 3, 6, 7)
GND
THERMAL
3 (1)
MGS584
TDA3663
REG
Pin numbers in brackets refer to the SO8 version.
Fig.1 Block diagram.

PINNING

PIN
SYMBOL
DESCRIPTION
SO4 SO8
V
P
1 8 supply voltage GND 2 and 4 2, 3, 6 and 7 ground; note 1 REG 3 1 regulator output n.c. 4 and 5 not connected
Note
1. For he SO8 package all GND pins are connected to the lead frame and can also be used to reduce the total thermal resistance R
by soldering these pins to a ground plane. The ground plane on the top side of the PCB acts like a
th(j-a)
heat spreader.
2000 Dec 14 3
Page 4
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
handbook, halfpage
GND
4
132
V
P
GND
REG
MGL810
TDA3663

FUNCTIONAL DESCRIPTION

The TDA3663 is a fixed 3.3 V regulator which can deliver output currents up to 100 mA. The regulator is available in SO8 and SO4 packages. The regulator is intended for portable, mains, telephone and automotive applications. To increase the lifetime of batteries, a specially built-in clamp circuit keeps the quiescent current of this regulator very low, also in dropout and full load conditions.
The device remains operational down to very low supply voltages and below this voltage it switches off.
Atemperatureprotection circuit is included which switches off the regulator output at a junction temperature above 150 °C.
A new output circuit guarantees the stability of the regulator for a capacitor output circuit with an ESR (worst-case) up to 22 , see Figs 5 and 6. This is very attractive as the ESR of an electrolytic capacitor increases strongly at low temperatures (no expensive tantalum capacitor is required).
handbook, halfpage
Fig.2 Pin configuration of SO4.
REG
GND
n.c.
1 2 3 4
TDA3663
MGS585
V
8
P
GNDGND
7
GND
6
n.c.
5
Fig.3 Pin configuration of SO8.
2000 Dec 14 4
Page 5
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
TDA3663
3.3 V voltage regulator

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
V
P(rp)
P
tot
T
stg
T
amb
T
j

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-c)
supply voltage 45 V reverse polarity supply voltage non-operating −−25 V total power dissipation
SO8 temperature of copper area
4.1 W
is 25 °C
SO4 T
=25°C 5W
amb
storage temperature non-operating 55 +150 °C ambient temperature operating 40 +125 °C junction temperature operating 40 +150 °C
thermal resistance from junction to ambient
SO8 in free air; soldered in 125 K/W SO4 in free air; soldered in 100 K/W
thermal resistance from junction to case
SO8 to centre pins; soldered 30 K/W SO4 in free air 25 K/W

QUALITY SPECIFICATION

In accordance with
“SNW-FQ-611E”
.
2000 Dec 14 5
Page 6
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
TDA3663
3.3 V voltage regulator

CHARACTERISTICS

VP= 14.4 V; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply voltage: pin V
V
P
I
q
Regulator output: pin REG
V
REG
V
REG(drop)
V
REG(stab)
V
REG(line)
V
REG(load)
SVRR supply voltage ripple rejection f
I
REG(crl)
I
LO(rp)
=25°C; measured with test circuit of Fig.4; unless otherwise specified.
amb
P
supply voltage regulator operating; note 1 3 14.4 45 V quiescent supply current VP= 4.5 V; I
V
= 14.4 V; I
P
6VV 6VV
22 V; I
P
22 V; I
P
output voltage 8 V VP≤ 22 V; I
0.5 mA I 6VV
45 V; I
P
dropout voltage VP= 3.1 V; T
I
=50mA
REG
=0mA 10 −µA
REG
=0mA 15 30 µA
REG
=10mA 0.2 0.5 mA
REG
=50mA 1.4 2.5 mA
REG
= 0.5 mA 3.16 3.3 3.44 V
REG
100 mA 3.13 3.3 3.47 V
REG
= 0.5 mA 3.13 3.3 3.47 V
REG
amb
85 °C;
0.18 0.3 V
output voltage long-term stability 20 mV/1000 h line input regulation voltage 7 V VP≤ 22 V; I
7VV
load output regulation voltage 0.5 mA I
= 120 Hz;
i
V
i(ripple)
I
REG
output current limit V output leakage current at
REG
VP= 15 V; V
45 V; I
P
REG
= 1 V (RMS);
= 0.5 mA
> 2.8 V 0.17 0.25 A
REG
= 0.5 mA 130mV
REG
= 0.5 mA 150mV
REG
50 mA 10 50 mV
50 60 dB
0.3 V 1 500 µA
reverse polarity
Note
1. The regulator output will follow V
if VP<V
P
REG+VREG(drop)
2000 Dec 14 6
.
Page 7
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator

TEST AND APPLICATION INFORMATION

dbook, halfpage
V
P
(1)
C1 1 µF
(1) C1 is optional (to minimize supply noise only).
13
TDA3663
2, 4
MGS586
Fig.4 Test circuit (SO4).
C2 10 µF
V
REG
= 3.3 V
TDA3663
2
10
handbook, halfpage
ESR
()
10
1
1
10
10
(1) Maximum ESR at 200 µA I (2) Minimum ESR only when I
(2)
1
(1)
stable region
11010
100 mA.
REG
200 µA.
REG
Fig.5 Graph for selecting the value of the output
capacitor.
MDA961
C2 (µF)
2

Noise

The output noise is determined by the value of the output capacitor. The noise figure is measured at a bandwidth of 10 Hz to 100 kHz (see Table 1).
Table 1 Noise figures
OUTPUT
NOISE FIGURE (µV)
CURRENT
I
REG
(mA)
C2 = 10 µFC2=47µF C2 = 100 µF
0.5 550 320 300 50 650 400 400

Stability

The regulator is stabilized with an external capacitor connectedto the output. The value of this capacitor can be selected using the diagrams shown in Figs 5 and 6. The following four examples show the effects of the stabilization circuit using different values for the output capacitor.
3
10
handbook, halfpage
ESR
()
2
10
22
10
1
1
10
110 10
stable region
Fig.6 ESR as a function of I
value of the output capacitor.
MDA962
2
10
I
(mA)
REG
for selecting the
REG
3
2000 Dec 14 7
Page 8
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
EXAMPLE 1 The regulator is stabilized with an electrolytic capacitor of
68 µF (ESR = 0.5 ). At T value is decreased to 22 µF and the ESR is increased to 3.5 . The regulator will remain stable at a temperature of T
amb
= 40 °C.
EXAMPLE 2 The regulator is stabilized with an electrolytic capacitor of
10 µF (ESR = 3.3 ). At T value is decreased to 3 µF and the ESR is increased to 20 . The regulator will remain stable at a temperature of T
= 40 °C.
amb
EXAMPLE 3 The regulator is stabilized with a 100 nF MKT capacitor
connected to the output. When the output current is over 200 µA full stability is guaranteed. Because the thermal influence on the capacitor value is almost zero, the regulator will remain stable at a temperature of T
= 40 °C.
amb
EXAMPLE 4 The regulator is stabilized with a 100 nF capacitor in
parallelwith an electrolytic capacitor of 10 µFconnectedto the output.
The regulator is now stable under all conditions and independent of:
The ESR of the electrolytic capacitor
The value of the electrolytic capacitor
The output current.
= 40 °C, the capacitor
amb
= 40 °C, the capacitor
amb
TDA3663
The total thermal resistance of the TDA3663 can be decreased from 120 K/W to 50 K/W for the SO8 version. For the SO4 version it can be decreased from 100 to 40 K/WwhenGND pins 2 and 4 of the package are soldered to the printed-circuit board.
APPLICATION CIRCUIT WITH BACKUP FUNCTION Sometimes a backup function is needed to supply, for
example, a microcontroller for a short period of time when the supply voltage spikes to 0 V (or even 1 V).
Thisfunction can easily be built with the TDA3663byusing an output capacitor with a large value. When the supply voltage is 0 V (or 1 V), only a small current will flow into pin REG from this output capacitor (a few µA).
The application circuit is given in Fig.7.
dbook, halfpage
V
P
(1)
C1 1 µF
(1) C1 is optional (to minimize supply noise only). (2) C2 4700 µF.
13
TDA3663
2, 4
MGS587
C2
V
= 3.3 V
REG
(2)

Application circuits

The maximum output current of the regulator equals:
150 T
I
REG max()
= (mA)
-----------------------------------------­100 V
When T
=
------------------------------------------------------­R
th(j-a)VPVREG
150 T
amb
3.3()×
P
=21°C and VP= 14 V the maximum output
amb
amb
()×
current equals 116 mA.
2000 Dec 14 8
Fig.7 Application circuit with backup function
(SO4 version).
Page 9
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
TDA3663
3.3 V voltage regulator

Additional application information

This section gives typical curves for various parameters measured on the TDA3663AT. Standard test conditions are: VP= 14.4 V; T
25
handbook, halfpage
I
q
(µA)
20
15
10
5
amb
=25°C.
MDA947
I
q
(mA)
4
3
2
1
handbook, halfpage
MDA949
0
010
I
= 0 mA.
REG
20 30
V
P
Fig.8 Quiescent current as a function of the
supply voltage.
handbook, halfpage
2
I
q
(mA)
1.5
1
0.5
0
40 0
(1) Iqat 50 mA load. (2) Iqat 10 mA load.
(1)
(2)
40 80
120
(V)
MDA951
Tj (°C)
160
0
010 50
20 30
40
VP (V)
Fig.9 Quiescent current increase as a function of
high supply voltage.
0.48
handbook, halfpage
I
q
(mA)
0.44
0.40
0.36 5
I
= 10 mA.
REG
10 15
MDA948
VP (V)
2520
Fig.10 Quiescent current as a function of the
junction temperature.
2000 Dec 14 9
Fig.11 Quiescent current as a function of the
supply voltage.
Page 10
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
MDA950
VP (V)
2520
I
q
(mA)
1.8
1.6
1.4
2
5
handbook, halfpage
10 15
handbook, halfpage
4
I
q
(mA)
3
2
1
0
0 20 100
40 60
TDA3663
MDA952
80
I
(mA)
REG
I
= 50 mA.
REG
Fig.12 Quiescent current as a function of the
supply voltage.
3.40
handbook, halfpage
V
REG (V)
3.35
3.30
3.25
50 200
050
100 150
MGS694
T
(
°C)
j
Fig.13 Quiescent current as a function of the
output current.
handbook, halfpage
4
V
REG
(V)
3
2
1
0
50 200
050
100 150
MGS695
T
(
°C)
j
I
= 0 mA.
REG
Fig.14 Output voltage as a function of the junction
temperature.
2000 Dec 14 10
I
= 0 mA.
REG
Fig.15 Output voltage thermal protection as a
function of the junction temperature.
Page 11
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
500
handbook, halfpage
V
REG(drop)
(mV)
400
300
200
100
040
80 120
MDA957
I
(mA)
REG
handbook, halfpage
V
REG
(V)
TDA3663
I
REG
MGS696
(mA)
4
3
2
1
0
0
100
200 300
Fig.16 Dropout voltage as a function of the output
current.
30
handbook, halfpage
SVRR
(dB)
40
50
(1)
60
(2)
(3)
70 10
I
= 10 mA; C2 = 10 µF.
REG
(1) SVRR at RL= 100 . (2) SVRR at RL= 500 . (3) SVRR at RL=10kΩ.
2
10
3
10
MDA956
(1)
(2)
(3)
4
10
f (Hz)
VP= 8 V and pulsed load.
Fig.17 Fold back protection mode.
5
10
Fig.18 SVRR as a function of the ripple frequency.
2000 Dec 14 11
Page 12
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
TDA3663
3.3 V voltage regulator

PACKAGE OUTLINES

SO4: plastic small outline package; 4 leads; body width 3.5 mm SOT223-1

D
c
y
b
1
4
E
H
E
A
X
v M
A
132
Z
DIMENSIONS (mm are the original dimensions)
A
UNIT A
mm
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
max.
1.8
A
0.10
0.02
1
1.7
1.5
e
b
A
0.25
p
3
0.85
0.65
2
b
p
e
1
cD
b
1
3.15
0.35
2.95
0.25
w M
0 2 4 mm
scale
(1)
(1)
e
E
6.7
3.7
3.3
2.3
6.3
A
e1H
4.6
7.3
6.7
Q
A
2
A
1
L
L
detail X
LpQywv
L
E
1.02
1.75
0.62
1.0
0.8
0.1 0.10.2
(A3)
p
Z
1.2
0.7
θ
θ
10°
0°
OUTLINE VERSION
SOT223-1 TO-261
IEC JEDEC EIAJ
REFERENCES
2000 Dec 14 12
EUROPEAN
PROJECTION
ISSUE DATE
99-08-04 99-12-15
Page 13
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
SO8: plastic small outline package; 8 leads; body width 3.9 mm
D
c
y
Z
8
5
TDA3663

SOT96-1

E
H
E
A
X
v M
A
A
pin 1 index
1
e
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
mm
A
max.
1.75
0.069
A1A2A
0.25
1.45
0.10
1.25
0.010
0.057
0.004
0.049
0.25
0.01
b
3
p
0.49
0.25
0.36
0.19
0.019
0.0100
0.014
0.0075
UNIT
inches
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
4
w M
b
p
0 2.5 5 mm
scale
(1)E(2)
cD
5.0
4.8
0.20
0.19
eHELLpQZywv θ
4.0
1.27
3.8
0.16
0.050
0.15
2
A
6.2
5.8
0.244
0.228
Q
3
A
θ
0.25 0.10.25
0.010.010.041 0.004
(1)
0.7
0.3
0.028
0.012
o
8
o
0
L
p
L
0.7
0.6
0.028
0.024
(A )
1
detail X
1.0
1.05
0.4
0.039
0.016
OUTLINE
VERSION
SOT96-1
IEC JEDEC EIAJ
076E03 MS-012
REFERENCES
2000 Dec 14 13
EUROPEAN
PROJECTION
ISSUE DATE
97-05-22 99-12-27
Page 14
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
SOLDERING Introduction to soldering surface mount packages
Thistext gives a very brief insight to acomplextechnology. A more in-depth account of soldering ICs can be found in our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011). There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for certainsurface mount ICs, but it isnotsuitable for fine pitch SMDs. In these situations reflow soldering is recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied totheprinted-circuitboardby screen printing, stencilling or pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 220 °C for thick/large packages, and below 235 °C for small/thin packages.
Wave soldering
Conventional single wave soldering is not recommended forsurface mount devices (SMDs) or printed-circuitboards with a high component density, as solder bridging and non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically developed.
TDA3663
If wave soldering is used the following conditions must be observed for optimal results:
Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
Forpackages with leads on four sides,thefootprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
2000 Dec 14 14
Page 15
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
TDA3663
3.3 V voltage regulator
Suitability of surface mount IC packages for wave and reflow soldering methods
PACKAGE
BGA, LFBGA, SQFP, TFBGA not suitable suitable HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS not suitable
(3)
PLCC LQFP, QFP, TQFP not recommended SSOP, TSSOP, VSO not recommended
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
, SO, SOJ suitable suitable
temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
The package footprint must incorporate solder thieves downstream and at the side corners.
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
SOLDERING METHOD
WAVE REFLOW
(2)
(3)(4) (5)
suitable
suitable suitable
(1)
.
2000 Dec 14 15
Page 16
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
TDA3663
3.3 V voltage regulator

DATA SHEET STATUS

DATA SHEET STATUS
Objective specification Development This data sheet contains the design target or goal specifications for
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
Product specification Production This data sheet contains final specifications. Philips Semiconductors
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device atthese or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentation or warranty thatsuchapplications will be suitable for the specified use without further testing or modification.
PRODUCT
STATUS

DEFINITIONS

product development. Specification may change in any manner without notice.
published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductorscustomers using or sellingtheseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuse of any of these products,conveysno licence or title under any patent, copyright, or mask work right to these products,andmakes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
(1)
2000 Dec 14 16
Page 17
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
NOTES
TDA3663
2000 Dec 14 17
Page 18
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
NOTES
TDA3663
2000 Dec 14 18
Page 19
Philips Semiconductors Product specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
NOTES
TDA3663
2000 Dec 14 19
Page 20
Philips Semiconductors – a w orldwide compan y
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
2000
Internet: http://www.semiconductors.philips.com
70
Printed in The Netherlands 753503/04/pp20 Date of release: 2000 Dec 14 Document order number: 9397 750 07865
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