Datasheet TDA3663T, TDA3663 Datasheet (Philips)

Page 1
DATA SH EET
Preliminary specification File under Integrated Circuits, IC01
1999 Sep 29
INTEGRATED CIRCUITS
TDA3663
Very low dropout voltage/quiescent current 3.3 V voltage regulator
Page 2
1999 Sep 29 2
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
FEATURES
Fixed 3.3 V, 100 mA regulator
Supply voltage range up to 33 V (45 V)
Very low quiescent current of 15 µA (typical value)
Very low dropout voltage
High ripple rejection
Very high stability:
– Electrolytic capacitors:Equivalent Series Resistance
(ESR) < 30 at I
REG
25 mA
– Other capacitors: 100 nFat 200 µA I
REG
100 mA.
Pin compatible family TDA3662 to TDA3666
Protections:
– Reverse polarity safe (down to 25 V without high
reverse current) – Negative transient of 50 V (RS=10Ω, t < 100 ms) – Able to withstand voltages up to 18 V at the output
(supply line may be short-circuited)
– ESD protection on all pins – DC short-circuit safe to ground and VP of the
regulator output
– Temperature protection (at Tj> 150 °C).
GENERAL DESCRIPTION
The TDA3663is afixed 3.3 V voltage regulator with a very lowdropoutvoltage and quiescent current, which operates over a wide supply voltage range.
The IC is available as:
TDA3663: VP≤ 45 V, 40 °C T
amb
+125 °C and
SOT4 package (automotive)
TDA3663T: VP≤ 33 V, 40 °C T
amb
+85 °C and
SO8 package (non-automotive)
TDA3663AT: VP≤ 45 V, 40 °C T
amb
+125 °C and
SO8 package (automotive).
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply
V
P
input supply voltage regulator on
TDA3663 3 14.4 45 V TDA3663T 3 14.4 33 V TDA3663AT 3 14.4 45 V
I
q
quiescent supply current VP= 14.4 V; I
REG
=0mA 15 30 µA
Voltage regulator
V
REG
output voltage 8 V VP≤ 22 V; I
REG
= 0.5 mA 3.16 3.3 3.44 V
6VV
P
45 V; I
REG
= 0.5 mA; 3.13 3.3 3.47 V
0.5 mA I
REG
100 mA;
VP= 14.4 V
3.13 3.3 3.47 V
V
REG(drop)
dropout voltage I
REG
= 50 mA; T
amb
85 °C 0.18 0.3 V
TYPE
NUMBER
PACKAGE
NAME DESCRIPTION VERSION
TDA3663 SO4 plastic surface mounted package; collector pad for good heat
transfer; 4 leads
SOT223
TDA3663T SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1 TDA3663AT SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Page 3
1999 Sep 29 3
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
BLOCK DIAGRAM
handbook, halfpage
MGS584
REGULATOR
2, 4 (2, 3, 6, 7)
3 (1)
GND
1 (8)
REG
V
P
BAND GAP
TDA3663
THERMAL
PROTECTION
Fig.1 Block diagram.
Pins between brackets are for the SO8 version.
PINNING
Note
1. For the SO8 package all GND pins are connected to the lead frame and can also be used to reduce the total thermal resistance R
th(j-a)
by soldering these pins to a ground plane. The ground plane on the top side of the PCB acts like a
heat spreader.
SYMBOL
PIN
DESCRIPTION
SO4 SO8
V
P
1 8 supply voltage GND 2 and 4 2, 3, 6 and 7 ground; note 1 REG 3 1 regulator output n.c. 4 and 5 not connected
Page 4
1999 Sep 29 4
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
FUNCTIONAL DESCRIPTION
The TDA3663 is a fixed 3.3 V regulator which can deliver output currents up to 100 mA. The regulator is available in SO8 and SO4 packages. The regulator is intended for portable, mains, telephone and automotive applications. To increase the lifetime of batteries, a specially built-in clamp circuit keeps the quiescent current of this regulator very low, also in dropout and full load conditions.
The device remains operational down to very low supply voltages and below this voltage it switches off.
Atemperatureprotection circuit is included which switches off the regulator output at a junction temperature above 150 °C.
A new output circuit guarantees the stability of the regulator for a capacitor output circuit with an ESR up to 38 . This is very attractive as the ESR of an electrolytic capacitor increases strongly at low temperatures (no expensive tantalum capacitor is required).
handbook, halfpage
132
4
GND
MGL810
GND
V
P
REG
Fig.2 Pin configuration of SO4.
handbook, halfpage
1 2 3 4
8 7 6 5
MGS585
TDA3663
V
P
GNDGND GND n.c.
n.c.
GND
REG
Fig.3 Pin configuration of SO8.
Page 5
1999 Sep 29 5
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
In accordance with
“SNW-FQ-611E”
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
P
supply voltage
TDA3663 45 V TDA3663T 33 V TDA3663AT 45 V
V
P(rp)
reverse polarity supply voltage non-operating −−25 V
P
tot
total power dissipation
SO8 temperature of copper area
is 25 °C
4.1 W
SO4 T
amb
=25°C 5W
T
stg
storage temperature non-operating 55 +150 °C
T
amb
ambient temperature operating
TDA3663 40 +125 °C TDA3663T 40 +85 °C TDA3663AT 40 +125 °C
T
j
junction temperature operating 40 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient
SO8 in free air; soldered in 125 K/W SO4 in free air; soldered in 100 K/W
R
th(j-c)
thermal resistance from junction to case
SO8 to centre pins; soldered 30 K/W SO4 in free air 25 K/W
Page 6
1999 Sep 29 6
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
CHARACTERISTICS
VP= 14.4 V; T
amb
=25°C; measured with test circuit of Fig.4; unless otherwise specified.
Notes
1. The regulator output will follow V
P
if VP<V
REG+VREG(drop)
.
2. Limiting values as applicable for device type: a) TDA3663: VP≤ 45 V and −40 °C ≤ T
amb
+125 °C.
b) TDA3663T: VP≤ 33 V and −40 °C ≤ T
amb
+85 °C.
c) TDA3663AT: VP≤ 45 V and −40 °C ≤ T
amb
+125 °C.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Supply voltage: pin V
P
V
P
supply voltage regulator operating; note 1
TDA3663 3 14.4 45 V TDA3663T 3 14.4 33 V TDA3663AT 3 14.4 45 V
I
q
quiescent supply current VP= 4.5 V; I
REG
=0mA 10 −µA
V
P
= 14.4 V; I
REG
=0mA 15 30 µA
6VV
P
22 V; I
REG
=10mA 0.2 0.5 mA
6VV
P
22 V; I
REG
=50mA 1.4 2.5 mA Regulator output: pin REG; note 2 V
REG
output voltage 8 V VP≤ 22 V; I
REG
= 0.5 mA 3.16 3.3 3.44 V
0.5 mA I
REG
100 mA 3.13 3.3 3.47 V
6VV
P
45 V; I
REG
= 0.5 mA 3.13 3.3 3.47 V V
REG(drop)
dropout voltage VP= 3.1 V; T
amb
85 °C;
I
REG
=50mA
0.18 0.3 V
V
REG(stab)
output voltage long-term stability 20 mV/1000 h
V
REG(line)
line input regulation voltage 7 V VP≤ 22 V; I
REG
= 0.5 mA 130mV
7VV
P
45 V; I
REG
= 0.5 mA 150mV V
REG(load)
load output regulation voltage 0.5 mA I
REG
50 mA 10 50 mV
SVRR supply voltage ripple rejection f
i
= 120 Hz;
V
i(ripple)
= 1 V (RMS);
I
REG
= 0.5 mA
50 60 dB
I
REG(crl)
output current limit V
REG
> 2.8 V 0.17 0.25 A
I
LO(rp)
output leakage current at reverse polarity
VP= 15 V; V
REG
0.3 V 1 500 µA
Page 7
1999 Sep 29 7
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
TEST AND APPLICATION INFORMATION
dbook, halfpage
MGS586
V
P
13
2, 4
C2
TDA3663
10 µF
C1
(1)
1 µF
V
REG
= 3.3 V
Fig.4 Test circuit (SO4).
(1) C1 is optional (to minimize supply noise only).
handbook, halfpage
MDA961
ESR
()
C2 (µF)
10
2
10
1
10
1
10
1
11010
2
stable region
(2)
(1)
Fig.5 Graph for selecting the value of the output
capacitor.
(1) Maximum ESR at 200 µA I
REG
100 mA.
(2) Minimum ESR only when I
REG
200 µA.
Noise
The output noise is determined by the value of the output capacitor The noise figure is measured at a bandwidth of 10 Hz to 100 kHz (see Table 1).
Table 1 Noise figures
Stability
The regulator is stabilized with an external capacitor connectedto the output. The value of this capacitor can be selected using the diagrams shown in Figs 5 and 6. The following four examples show the effects of the stabilization circuit using different values for the output capacitor.
OUTPUT
CURRENT
I
REG
(mA)
NOISE FIGURE (µV)
C2 = 10 µFC2=47µF C2 = 100 µF
0.5 550 320 300 50 650 400 400
handbook, halfpage
MDA962
ESR
()
I
REG
(mA)
10
3
10
2
10
22
1
10
1
110 10
3
10
2
stable region
Fig.6 ESR as a function of I
REG
for selecting the
value of the output capacitor.
Page 8
1999 Sep 29 8
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
EXAMPLE 1 The regulator is stabilized with an electrolytic capacitor of
68 µF (ESR = 0.5 ). At T
amb
= 40 °C, the capacitor value is decreased to 22 µF and the ESR is increased to 3.5 . The regulator will remain stable at a temperature of T
amb
= 40 °C.
EXAMPLE 2 The regulator is stabilized with an electrolytic capacitor of
10 µF (ESR = 3.3 ). At T
amb
= 40 °C, the capacitor value is decreased to 3 µF and the ESR is increased to 20 . The regulator will remain stable at a temperature of T
amb
= 40 °C.
EXAMPLE 3 The regulator is stabilized with a 100 nF MKT capacitor
connected to the output. When the output current is over 200 µA full stability is guaranteed. Because the thermal influence on the capacitor value is almost zero, the regulator will remain stable at a temperature of T
amb
= 40 °C.
EXAMPLE 4 The regulator is stabilized with a 100 nF capacitor in
parallelwith an electrolytic capacitor of 10 µFconnectedto the output.
The regulator is now stable under all conditions and independent of:
The ESR of the electrolytic capacitor
The value of the electrolytic capacitor
The output current.
Application circuits
The maximum output current of the regulator equals:
When T
amb
=21°C and VP= 14 V the maximum output
current equals 116 mA. The total thermal resistance of the TDA3663 can be
decreased from 120 K/W to 50 K/W for the SO8 version. For the SO4 version it can be decreased from 100 to 40 K/Wwhen GND pins 2 and 4 of the package are soldered to the printed-circuit board.
APPLICATION CIRCUIT WITH BACKUP FUNCTION Sometimes a backup function is needed to supply, for
example, a microcontroller for a short period of time when the supply voltage spikes to 0 V (or even 1 V).
Thisfunction can easily be built with the TDA3663byusing an output capacitor with a large value. When the supply voltage is 0 V (or 1 V), only a small current will flow into pin REG from this output capacitor (a few µA).
The application circuit is given in Fig.7.
I
REG max()
150 T
amb
R
th(j-a)VPVREG
()×
-------------------------------------------------------
=
150 T
amb
100 V
P
3.3()×
------------------------------------------
= (mA)
dbook, halfpage
MGS587
V
P
13
2, 4
C2
(2)
TDA3663
C1
(1)
1 µF
V
REG
= 3.3 V
Fig.7 Application circuit with backup function
(SO4 version).
(1) C1 is optional (to minimize supply noise only). (2) C2 4700 µF.
Page 9
1999 Sep 29 9
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
Additional application information
This section gives typical curves for various parameters measured on the TDA3663AT. Standard test conditions are: VP= 14.4 V; T
amb
=25°C.
handbook, halfpage
010
V
P
(V)
I
q
(µA)
20 30
25
0
20
15
10
5
MDA947
Fig.8 Quiescent current as a function of the
supply voltage.
I
REG
= 0 mA.
handbook, halfpage
010 50
4
3
1
0
2
20 30
VP (V)
I
q
(mA)
40
MDA949
Fig.9 Quiescent current increase as a function of
high supply voltage.
handbook, halfpage
40 0
(1)
(2)
160
2
1.5
0.5
0
1
40 80
Tj (°C)
I
q
(mA)
120
MDA951
Fig.10 Quiescent current as a function of the
junction temperature.
(1) Iqat 50 mA load. (2) Iqat 10 mA load.
handbook, halfpage
5
0.36
0.40
0.44
0.48
10 15
VP (V)
I
q
(mA)
2520
MDA948
Fig.11 Quiescent current as a function of the
supply voltage.
I
REG
= 10 mA.
Page 10
1999 Sep 29 10
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
handbook, halfpage
5
1.4
1.6
1.8
2
10 15
VP (V)
I
q
(mA)
2520
MDA950
Fig.12 Quiescent current as a function of the
supply voltage.
I
REG
= 50 mA.
handbook, halfpage
0 20 100
4
3
1
0
2
40 60
I
REG
(mA)
I
q
(mA)
80
MDA952
Fig.13 Quiescent current as a function of the
output current.
handbook, halfpage
50 200
3.40
3.25
3.30
3.35
050
T
j
(
°C)
V
REG (V)
100 150
MGS694
Fig.14 Output voltage as a function of the junction
temperature.
I
REG
= 0 mA.
handbook, halfpage
50 200
4
0
1
3
2
050
T
j
(
°C)
V
REG
(V)
100 150
MGS695
Fig.15 Output voltage thermal protection as a
function of the junction temperature.
I
REG
= 0 mA.
Page 11
1999 Sep 29 11
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
handbook, halfpage
040
I
REG
(mA)
V
REG(drop)
(V)
80 120
500
400
200
100
300
MDA957
Fig.16 Dropout voltage as a function of the output
current.
handbook, halfpage
0
4
3
2
1
0
100
V
REG
(V)
I
REG
(mA)
200 300
MGS696
Fig.17 Fold back protection mode.
VP= 8 V and pulsed load.
handbook, halfpage
70
60
50
40
30
MDA956
10
SVRR
(dB)
f (Hz)
10
2
10
3
10
4
10
5
(1)
(1)
(2)
(2)
(3)
(3)
I
REG
= 10 mA; C2 = 10 µF. (1) SVRR at RL= 100 . (2) SVRR at RL= 500 . (3) SVRR at RL=10kΩ.
Fig.18 SVRR as a function of the ripple frequency.
Page 12
1999 Sep 29 12
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
PACKAGE OUTLINES
UNIT A1b
p
cD
E
e1HELpQywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73
97-02-28 99-09-13
w M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
Page 13
1999 Sep 29 13
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
UNIT
A
max.
A1A2A
3
b
p
cD
(1)E(2)
(1)
eHELLpQZywv θ
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8 0
o o
0.25 0.10.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w M
θ
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S MS-012AA
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.010.010.041 0.004
0.039
0.016
0 2.5 5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
95-02-04 97-05-22
Page 14
1999 Sep 29 14
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
SOLDERING Introduction to soldering surface mount packages
Thistext gives a very brief insight to acomplextechnology. A more in-depth account of soldering ICs can be found in our
“Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011). There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used.
Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied totheprinted-circuitboardby screen printing, stencilling or pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C.
Wave soldering
Conventional single wave soldering is not recommended forsurface mount devices (SMDs) or printed-circuitboards with a high component density, as solder bridging and non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically developed.
If wave soldering is used the following conditions must be observed for optimal results:
Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave.
For packages with leads on two sides and a pitch (e): – larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board;
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
Forpackages with leads on four sides,thefootprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C.
When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Page 15
1999 Sep 29 15
Philips Semiconductors Preliminary specification
Very low dropout voltage/quiescent current
3.3 V voltage regulator
TDA3663
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the
“Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”
.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
PACKAGE
SOLDERING METHOD
WAVE REFLOW
(1)
BGA, SQFP not suitable suitable HLQFP, HSQFP, HSOP, HTSSOP, SMS not suitable
(2)
suitable
PLCC
(3)
, SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended
(3)(4)
suitable
SSOP, TSSOP, VSO not recommended
(5)
suitable
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Page 16
© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
Philips Semiconductors – a w orldwide compan y
For all other countries apply to: Philips Semiconductors,
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Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips DevelopmentCorporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 62 5344, Fax.+381 11 63 5777
Printed in The Netherlands 545002/01/pp16 Date of release: 1999 Sep 29 Document order number: 9397 750 06068
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