Datasheet TCMT1102, TCMT1101, TCMT1100, TCMT4100, TCMT1109 Datasheet (VISHAY)

TCMT11.. Series

Optocoupler with Phototransistor Output

Description

The TCMT11.. Series consist of a phototransistor
optically coupled to a gallium arsenide infrared­emitting diode in an 4- lead up to 16- lead plastic
Miniflat package.
The elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance
between input and output for highest safety
requirements.

Applications

Programmable logic controllers, modems, answering
machines, general applications

Coll. Emitter

Features

Vishay Semiconductors

16467

9

D

Low profile package (half pitch)

D

AC Isolation test voltage V

D

Low coupling capacitance of typical 0.3 pF

D

Current Transfer Ratio (CTR) selected into groups

D

Low temperature coefficient of CTR

D

Wide ambient temperature range

D

Underwriters Laboratory (UL) 1577 recognized,
file number E-76222

D

CSA (C-UL) 1577 recognized
file number E- 76222 - Double Protection

D

Coupling System M

= 3.75 kV

io

RMS

12 8

Anode Cath.

4 PIN

16 PIN

C

Order Instruction

Ordering Code CTR Ranking Remarks
TCMT1 100 50 to 600% 4 Pin = Single channel
TCMT1101 40 to 80% 4 Pin = Single channel
TCMT1102 63 to 125% 4 Pin = Single channel
TCMT1103 100 to 200% 4 Pin = Single channel
TCMT1104 160 to 320% 4 Pin = Single channel
TCMT1105 50 to 150% 4 Pin = Single channel
TCMT1106 100 to 300% 4 Pin = Single channel
TCMT1107 80 to 160% 4 Pin = Single channel
TCMT1108 130 to 260% 4 Pin = Single channel
TCMT1109 200 to 400% 4 Pin = Single channel
TCMT4100 50 to 600% 16 Pin = Quad channel

16281

Rev. A2, 15–Dec–00

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TCMT11.. Series

Vishay Semiconductors

Absolute Maximum Ratings

Input (Emitter)

Parameter Test Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T

Output (Detector)

Parameter Test Conditions Symbol Value Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Peak collector current tp/T = 0.5, tp ≤ 10 ms I
Power dissipation T
Junction temperature T

≤ 25°C P

amb

≤ 25°C P

amb

R

F

FSM

V

CEO
ECO

C

CM

V

6 V

60 mA

1.5 A

100 mW

j

125

°

C

70 V

7 V

50 mA
100 mA
150 mW

j

125

°

C

Coupler

Parameter Test Conditions Symbol V alue Unit
AC isolation test voltage (RMS) VIO
Total power dissipation T
Operating ambient temperature

range
Storage temperature range T
Soldering temperature T

1)

Related to standard climate 23/50 DIN 50014

≤ 25°C P

amb

T

tot

amb

stg

sd

1)

3.75 kV
250 mW

–40 to +100

–40 to +100

235

°

C

°

C

°

C

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TCMT11.. Series

C F

Vishay Semiconductors

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Forward voltage IF = 50 mA V
Junction capacitance VR = 0 V, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter voltage IC = 100 mA V
Emitter collector voltage IE = 100 mA V
Collector dark current VCE = 20 V, IF = 0, E = 0 I

Coupler

Parameter Test Conditions Symbol Min. Typ. Max. Unit
Collector emitter saturation

voltage
Cut-off frequency IF = 10 mA, VCE = 5 V,

Coupling capacitance f = 1 MHz C

IF = 10 mA, IC = 1 mA V

RL = 100

W

F

j

CEO
ECO

CEO

CEsat

f

c

k

1.25 1.6 V
50 pF

70 V

7 V

100 nA

0.3 V

100 kHz

0.3 pF

Current Transfer Ratio (CTR)

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

IC/I

F

VCE = 5 V, IF = 5 mA TCMT1100 CTR 0.5 6.0
VCE = 5 V, IF = 10 mA TCMT1101 CTR 0.4 0.8
VCE = 5 V, IF = 10 mA TCMT1102 CTR 0.63 1.25
VCE = 5 V, IF = 10 mA TCMT1103 CTR 1.0 2.0
VCE = 5 V, IF = 10 mA TCMT1104 CTR 1.6 3.2
VCE = 5 V, IF = 5 mA TCMT1105 CTR 0.5 1.5
VCE = 5 V, IF = 5 mA TCMT1106 CTR 1.0 3.0
VCE = 5 V, IF = 5 mA TCMT1107 CTR 0.8 1.6
VCE = 5 V, IF = 5 mA TCMT1108 CTR 1.3 2.6
VCE = 5 V, IF = 5 mA TCMT1109 CTR 2.0 4.0
VCE = 5 V, IF = 5 mA TCMT4100 CTR 0.5 6.0

Rev. A2, 15–Dec–00

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TCMT11.. Series

S C L

(g)

S F L

(g)

Vishay Semiconductors

Switching Characteristics

Parameter T est Conditions Symbol T yp. Unit
Delay time VS = 5 V, IC = 2 mA, RL = 100 W (see figure 1) t
Rise time
Fall time t
Storage time t
Turn-on time t
Turn-off time t
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 kW (see figure 2) t
Turn-off time

d

t

r
f

s
on
off
on

t

off

3.0

3.0

4.7

0.3

6.0

5.0

9.0

18.0

m

s

m

s

m

s

m

s

m

s

m

s

m

s

m

s

W

+ 5 V

= 2 mA;

I

C

Channel I

Channel II

0

R

G

t

p

T

t

p

95 10804

I

F

= 50 W

= 0.01

= 50 ms

50

I

F

W

100

Figure 1. Test circuit, non-saturated operation

W

+ 5 V

I

C

Channel I

Channel II

0

R

= 50 W

G

t

p

= 0.01

T

t

= 50 ms

p

95 10843

I

F

IF = 10 mA

50

W

1 k

adjusted through
input amplitude

Oscilloscope

R

= 1 M

W

L

C

= 20 pF

L

Oscilloscope

> 1 M

R
CL < 20 pF

W

L

I

F

0

I

C

100%

90%

10%

0

t

r

t

d

t

on

t

p

t

d

t

r

t

(= td + tr) turn-on time

on

pulse duration
delay time
rise time

Figure 3. Switching times

96 11698

t

p

t

t

s

f

t

off

t

s

t

f

t

(= ts + tf) turn-off time

off

t

t

storage time
fall time

Figure 2. Test circuit, saturated operation

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Document Number 83510

TCMT11.. Series

Vishay Semiconductors

Typical Characteristics (T

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P – Total Power Dissipation ( mW )

0

0 40 80 120

T

– Ambient Temperature ( °C )96 11700

amb

Figure 4. Total Power Dissipation vs.

Ambient Temperature

1000.0

100.0

= 25_C, unless otherwise specified)

amb

10000

VCE=20V
I

=0

1000

100

with open Base ( nA )

CEO

I – Collector Dark Current,

95 11026

F

10

1

0255075

T

– Ambient Temperature ( °C )

amb

Figure 7. Collector Dark Current vs. Ambient Temperature

100

VCE=5V

10

100

10.0

1.0

F

I – Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

Figure 5. Forward Current vs. Forward Voltage

2.0

V

=5V

CE

I

=5mA

1.5

1.0

0.5

rel

CTR – Relative Current Transfer Ratio

0

–25 0 25 50

T

– Ambient Temperature ( °C )95 11025

amb

F

75

1

0.1

C

I – Collector Current ( mA )

0.01

0.1 1 10

95 11027

IF – Forward Current ( mA )

Figure 8. Collector Current vs. Forward Current

100

20mA

IF=50mA

10mA

5mA

2mA

1mA

C

I – Collector Current ( mA )

95 10985

10

1

0.1

0.1 1 10
V

– Collector Emitter Voltage ( V )

CE

100

100

Figure 6. Relative Current Transfer Ratio vs.

Ambient Temperature

Rev. A2, 15–Dec–00

Figure 9. Collector Current vs. Collector Emitter Voltage

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TCMT11.. Series

)

Vishay Semiconductors

1.0
20%

0.8

CTR=50%

0.6

0.4

CEsat

V – Collector Emitter Saturation Voltage ( V

95 11028

0.2

0

110

IC – Collector Current ( mA )

10%

100

Figure 10. Collector Emitter Saturation Voltage vs.

Collector Current

1000

VCE=5V

100

10

50

m

off

on

t / t – Turn on / Turn off Time ( s )

95 11031

Saturated Operation
V

=5V

40

30

20

10

0

S

R

=1k

W

L

0 5 10 15

I

– Forward Current ( mA )

F

t

off

t

on

20

Figure 12. Turn on / off Time vs. Forward Current

10

m

8

t

on

6

t

off

4

Non Saturated
Operation
V

=5V

S

R

=100

W

L

2

CTR – Current Transfer Ratio ( % )

95 11029

1

0.1 1 10
IF – Forward Current ( mA )

100

Figure 11. Current Transfer Ratio vs. Forward Current

Pin 1 Indication T ype

off

on

t / t – Turn on / Turn off Time ( s )

95 11030

0

02 4 6

I

– Collector Current ( mA )

C

10

Figure 13. Turn on / off Time vs. Collector Current

System Letter

T1100M

901TK27

15230

Date

Code

(YM)

Company

Logo

Production

Location

Figure 14. Marking example

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Document Number 83510

Dimensions of TCMT1... in mm

TCMT11.. Series

Vishay Semiconductors

Rev. A2, 15–Dec–00

16283

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TCMT11.. Series

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Dimensions of TCMT4... in mm

15226

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Document Number 83510

Dimensions of Reel in mm

TCMT11.. Series

Vishay Semiconductors

W

1

N

A

Reel Hub

W

2

Version Tape Width A N W

G 16 330 ± 1 100 ± 1.5 16.4 + 2 22.4

Dimensions of Leader and Trailer in mm

Trailer Leader

no devices no devices

min. 200 min. 400

devices

16515

1

W

2 max

StartEnd

96 11818

Rev. A2, 15–Dec–00

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TCMT11.. Series

Vishay Semiconductors

Dimensions of Tape in mm

16511

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Document Number 83510

Dimensions of Tape in mm

TCMT11.. Series

Vishay Semiconductors

Rev. A2, 15–Dec–00

16510

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11 (12)

TCMT11.. Series

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 83510