Datasheet TC4626COE, TC4627COE, TC4626MJA, TC4626EPA, TC4626EOE Datasheet (Microchip Technology)

TC4626/TC4627

Power CMOS Drivers With Voltage Tripler

Features

• Power Driver WithOn Board Voltage Booster

•LowI

DD

–<4mA

• Small Package – 8-Pin PDIP

• Under-Voltage Circuitry

• Fast Rise-Fall Time – <40nsec @1000pF

• Below-Rail Input Protection

Applications

• Raises 5V to drive higher – Vgs (ON) MOSFETs

• Eliminates one system power supply

Device Selection Table

Part

Number

TC4626COE 16-Pin SOIC (Wide) -55°C to +125°C

TC4626CPA 8-PinPDIP -40°C to +85°C

TC4626EOE 16-Pin SOIC (Wide) -40°C to +85°C

TC4626EPA 8-Pin PDIP 0°C to +70°C
TC4626MJA 8-Pin CERDIP 0°C to +70°C

TC4627COE 16-Pin SOIC (Wide) -55°C to +125°C

TC4627CPA 8-PinPDIP -40°C to +85°C

TC4627EOE 16-Pin SOIC (Wide) -40°C to +85°C

TC4627EPA 8-Pin PDIP 0°C to +70°C
TC4627MJA 8-Pin CERDIP 0°C to +70°C

Package Temp. Range

Package Type

8-Pin PDIP/CERDIP

–

C1

C1

GND

1

+

2

TC4626

C2

3

TC4627

4

V

8

DD

7

IN

6

V

BOOST

5

OUT

16-Pin SOIC (Wide)

C1

NC

C1

NC

C2

NC

NC

GND

–

1

2

+

3

4

TC4626

5

TC4627

6

7

8

V

16

DD

NC

15

14

NC

IN

13

12

NC

V

11

BOOST

NC

10

OUT

9

General Description

The TC4626/TC4627 are single CMOS high speed
drivers with an on-board voltage boost circuit. These
partswork with an input supply voltagefrom4to6volts.
The internal voltage booster will produce a V
potential up to 12 volts above VIN.ThisV
regulated, so i ts voltage is dependent on the input V
voltage and output drive loading requirements. An
internalundervoltage lockoutcircuitkeepsthe outputin
a low state whenV
is enabled when V

dropsbelow 7.8 volts. Output

BOOST

is above 11.3 volts.

BOOST

BOOST

BOOST

is not

DD

Functional Block Diagram

EXT

C

1

+

EXT

C

2

NOTE: Pin numbers correspond to 8-pin package.



2002 Microchip TechnologyInc. DS21426B-page 1

C1-

C2

V

GND

DD

In

1

3

V = 2 x V

8

7

4

Voltage
Booster

DD

Clock

2

C1+

+

V

BOOST

Noninverting

TC4627

Inverting
TC4626

(Unregulated 3 x VDD)

UV LOCK

6

EXT

+

C

3

5

Output

TC4626/TC4627

1.0 ELECTRICAL
CHARACTERISTICS

*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the

Absolute Maximum Ratings*

Supply Voltage......................................................6.2V

operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affectdevice reliability.

Input Voltage, Any Terminal

.....................................V

Package Power Dissipation (T

+0.3VtoGND–0.3V

S

≤ 70°C)

A

PDIP.........................................................730mW

CERDIP....................................................800mW

SOIC . .......................................................760mW

Derating Factor PDIP.......5.6 mW/°C Above 36°C

CERDIP................................................6.0mW/°C

Operating Temperature Range (Ambient)

C Version.........................................0°C to +70°C

E Version......................................-40°C to +85°C

M Version ...................................-55°C to +125°C

StorageTemperature Range..............-65°C to +150°C

TC4626/TC4627 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: TA=+25°C,VDD =5V,C1=C2=C310µF unless otherwise noted.

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

Switching Time

t

R

t

F

t

D1

t

D2

F

MAX

Voltage Booster

R

3

R

2

F

OSC

V

OSC

UV @V

BOOST

V

START@VBOOST

V

BOOST

Logic1, High Input Voltage 2.4 — — V
Logic0, Low Input Voltage — — 0.8 V
Input Current -1 — 1 µA0V ≤ VIN ≤ V

High OutputVoltage V

–0.025 — — V

BOOST

Low Output Voltage — — 0.025 V
Output Resistance, High — 10 15 Ω I
Output Resistance, Low — 8 10 Ω I

=10mA,VDD=5V

OUT

=10mA,VDD=5V

OUT

Peak Output Current — 1.5 — A

RiseTime — 33 40 nsec Figure3-1,Figure3-2
FallTime — 27 35 nsec Figure 3-1, Figure3-2
Delay Time — 35 45 nsec Figure 3-1, Figure 3-2
Delay Time — 45 55 nsec Figure 3-1, Figure 3-2
MaximumSwitching Frequency 1.0 — — MHz VDD=5V,V

Figure 3-1

Voltage Tripler Output

—300400Ω IL=10mA,VDD=5V

Source Resistance
Voltage DoublerOutput

—120200Ω

Source Resistance
Oscillator Frequency 12 — 28 kHz
Oscillator Amplitude Measured

at C1-

4.5 — 10 V R

LOAD

=10kΩ

Undervoltage Threshold 7.0 7.8 8.5 V
Start Up Voltage 10.5 11.3 12 V
@VDD= 5V 14.6 — — V No Load

DRIVE

BOOST

>8.5V,

DS21426B-page 2



2002 Microchip TechnologyInc.

TC4626/TC4627

TC4626/TC4627 ELECTRICAL SPECIFICATIONS (CONTINUED)

Symbol Parameter Min Typ Max Units Test Conditions

PowerSupply

I

DD

V

DD

Electrical Characteristics: Over operating temperature range, V

Symbol Parameter Min Typ Max Units Test Conditions

Input

V

IH

V

IL

I

IN

Output

V

OH

V

OL

R

O

R

O

I

PK

Switching Time

t

R

t

F

t

D1

t

D2

F

MAX

Voltage Booster

R

3

R

2

F

OSC

V

OSC

UV @V

BOOST

V

START@VBOOST

V

BOOST

PowerSupply

I

DD

V

DD

Power Supply Current — — 2.5 mA VIN= LOW or HIGH
Supply Voltage 4.0 — 6.0 V

=5V,C1=C2=C310µF unless otherwise noted.

DD

Logic 1, High Input Voltage 2.4 — — V
Logic 0, Low Input Voltage — — 0.8 V
InputCurrent -10 — 1 µA0V ≤ VIN ≤ V

High Output Voltage V

–0.025 — — V

DRIVE

BOOST

Low Output Voltage — — 0.025 V
Output Resistance, High —

151520

25

Output Resistance, Low —

101013

15

Ω I

OUT

C&EVersion(T
M Version (T

Ω I

OUT

C&EVersion(T
M Version (T

=10mA,VDD=5V

=10mA,VDD=5V

Peak OutputCurrent — 1.5 — A

Rise Time — — 55 nsec Figure 3-1, Figure 3-2
Fall Time — — 50 nsec Figure 3-1, Figure 3-2
DelayTime — — 60 nsec Figure 3-1, Figure 3-2
DelayTime — — 70 nsec Figure 3-1, Figure 3-2
Maximum Switching Frequency 750 — — kHz VDD=5V,V

Figure3-1

Voltage Boost Output

— 400 500 Ω IL=10mA,VDD=5V

BOOST

SourceResistance
Voltage Doubler Output

— 170 300 Ω

SourceResistance
Oscillator Frequency 5 — 50 kHz
Oscillator Amplitude

Measured at C1-

4.5 — 10 V R

LOAD

=10kΩ

UndervoltageThreshold 7.0 7.8 8.5 V
Start Up Voltage 10.5 11.3 12 V
@VDD= 5V 14.6 — — V N o Load

Power Supply Current — — 4 mA VIN= LOW or HIGH
Supply Voltage 4.0 — 6.0 V

=70°Cor85°C)

A

=125°C)

A

=70°Cor85°C)

A

=125°C)

A

>8.5V,



2002 Microchip TechnologyInc. DS21426B-page 3

TC4626/TC4627

2.0 PIN DESCRIPTIONS

ThedescriptionsofthepinsarelistedinTable2-1.

TABLE 2-1: PIN FUNCTION TABLE

Pin No.

(8-Pin PDIP,

CERDIP)

1C1­2C1+
3C2
4 GND Ground.
5OUT
6V
7IN
8V

Pin No.

(16-Pin SOIC

Wide)

1C1­2 NC No connect.
3C1+
4 NC No connect.
5C2
6 NC No connect.
7 NC No connect.
8 GND Ground.

9OUT
10 NC No connect.
11 V
12 NC No connect.
13 IN
14 NC No connect.
15 NC No connect.
16 V

Symbol Description

BOOST

DD

Symbol Description

BOOST

DD

DS21426B-page 4



2002 Microchip TechnologyInc.

3.0 APPLICATIONS INFORMATION

t

TC4626/TC4627

FIGURE 3-1: INVERTING DRIVE R

SWITCHING TIME

V

BOOST

3

5

0.1µF Ceramic

Output

CL = 1000pF

V

DD

90%

t

D2

t

R

10%

= 5V

+5V

Input

0V

V

BOOST

Output

0V

Input: 100kHz,

square wave,

= t

RISE

C
10µF

C
10µF

FALL

Input

1

2

C
10µF

6

7

2

C1+

C1-

1

TC4626

38

C

2

4

10%

t

D1

t

F

90%

10%

≤ 10nsec

90%

FIGURE 3-2: NONINVERTING DRIVER

SWITCHING TIME

V

BOOST

5

0.1µF Ceramic

Output

CL = 1000pF

= 5V

V

DD

90%

90%

t

D2

10%

+5V

Input

0V

V

BOOST

Output

0V

Input: 100kHz,

square wave,

= t

t

RISE

C
10µF

C
10µF

FALL

1

2

C

3

10µF

6

7

Input

2

C1+

C1-

1

TC4627

38

C

2

4

10%

90%

t

D1

≤ 10nsec

10%

t

R

t

F



2002 Microchip TechnologyInc. DS21426B-page 5

TC4626/TC4627

3.1 BOOSTER FUNCTION

The voltage booster is an unregulated voltage tripler
circuit. The tripler consists of three sets of internal
switches and three external capacitors. S1a and S1b
chargecapacitorC1 to V

FIGURE 3-3: VOLTAGE BOOSTER

potential.S2aand S2b add

DD

3 x VDD, V

S1a

S1b

C3

C2

C1

+

+

(4 to 6V)

V

DD

+

6

3

8

2

1

2 x V

BOOST

DD

C1 potential to V

input to charge C2 to 2 x VDD.S3a

DD

and S3b add C1 potential to C2 to charge C3 to 3 x
V

. The position of the switches is controlled by the

DD

internal 4 phase clock.

6

S3a

S2a

S2b

S3b

GND

4

FIGURE 3-4: POSITION OF SWITCHES

Pin 1 & 2 Waveforms

DD

DD

V

DD

DD

V

DD

0

On

Off

Pin 2

Voltage

Pin 1

Voltage

3 x V

2 x V

2 x V

S1

DS21426B-page 6

On

S2

Off

On

S3

Off



2002 Microchip TechnologyInc.

TC4626/TC4627

4.0 TYPICAL CHARACTERISTICS

Note: The graphs and tables provided following this note are a statisticalsummary based on a limited number of

samplesandareprovidedforinformationalpurposesonly. The performancecharacteristicslistedherein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range ( e.g., outside specified power supply range) and therefore outside the warranted range.

16

14

12

10

8

HI (Volts)

6

OUT

V

4

2

0

5

14

12

10

8

HI (Volts)

6

OUT

V

4

2

0

5

TC4626 VOH vs. Frequency

470pF

2200pF

500 1,000 1,500 2,000 2,500 3,000 3,500

1000pF

FREQUENCY (kHz)

VS = 5V

= -55

T

A

°C

TC4626 VOH vs. Frequency

VS = 5V

= 125

T

A

470pF

2200pF

1000pF

500 1,000 1,500 2,000 2,500 3,000 3,500

FREQUENCY (kHz)

TC4626 VOH vs. Frequency

14

12

10

8

HI (Volts)

6

OUT

V

4

2

0

10

470pF

2200pF

500 1,000 1,500 2,000 2,500 3,000 3,500

1000pF

FREQUENCY (kHz)

VS = 5V

= 25

T

A

°C

Delay Time vs. Temperature

100

Input = 0-5V;

& TF <10nsec;

T

°C

Time (nsec)

R

@ <20kHz

80

t

D2

60

t

D1

40

t

RISE

20

0

-40 -20 0 20

t

FALL

TEMPERATURE (°C)

VS = 4V
C

LOAD

40 60 80

= 1000pF

100 120

Delay Time vs. Temperature

60

VS = 5V

= 1000pF

C

50

LOAD

40

t

D2

t

30

Time (nsec)

20

10

0



2002 Microchip TechnologyInc. DS21426B-page 7

D1

t

FALL

-40 -20 0 20

t

TEMPERATURE (°C)

RISE

Input = 0-5V;
T

& TF <10nsec;

R

@ <20kHz

40 60 80

100

120

50

40

30

20

Time (nsec)

10

Delay Time vs. Temperature

VS = 6V

= 1000pF

C

LOAD

t

D2

t

D1

t

t

FALL

0

-40 -20 0 20

RISE

TEMPERATURE (°C)

Input = 0-5V;
TR & TF <10nsec;
@ <20kHz

40 60 80

100

120

TC4626/TC4627

TYPICAL CHARACTERISTICS (CONTINUED)

16

15

14

13

12

HI (Volts)

11

OUT

V

10

9

8

16

15

14

13

12

HI (Volts)

11

OUT

V

10

9

8

TC4626 VOH vs. Frequency

VS = 5V

= 25

T

°C

A

1234567

FREQUENCY x 100 kHz

TC4626 VOH vs. Frequency

VS = 5V

= 125

T

°C

A

2,200pF

1

34

2

FREQUENCY x 100 kHz

567

1,000pF

2,200pF

8

470pF

1,000pF

8

470pF

9 100

9

TC4626 VOH vs. Frequency

16

VS = 5V

15

14

13

12

HI (Volts)

11

OUT

V

10

100

= -55

T

°C

A

9

8

1234567

FREQUENCY x 100 kHz

470pF

1,000pF

2,200pF

8

100

9

DS21426B-page 8



2002 Microchip TechnologyInc.

5.0 PACKAGING INFORMATION

3

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3

)

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)

Package marking data not available at this time.

5.1 Package Dimensions

8-Pin Plastic DIP

TC4626/TC4627

.260 (6.60
.240 (6.10

.045 (1.14
.030 (0.76

.200 (5.08
.140 (3.56

.150 (3.81
.115 (2.92

8-Pin CDIP (Narrow

.400 (10.16

.348 (8.84

.110 (2.79
.090 (2.29

.022 (0.56
.015 (0.38

.110 (2.79
.090 (2.29

.070 (1.78
.040 (1.02

.040 (1.02
.020 (0.51

.300 (7.62
.230 (5.84

.310 (7.87
.290 (7.37

.015 (0.38
.008 (0.20

.400 (10.16

310 (7.87

Dimensions: inches (mm)

.055 (1.40) MAX

.200 (5.08
.160 (4.06

.200 (5.08
.125 (3.18

.400 (10.16

.370 (9.40

.065 (1.65
.045 (1.14

.020 (0.51
.016 (0.41

.020 (0.51) MIN

.040 (1.02
.020 (0.51

.150 (3.81

.015 (0.38
.008 (0.20

.320 (8.13
.290 (7.37

.400 (10.16

.320 (8.13

Dimensions: inches (mm)



2002 Microchip TechnologyInc. DS21426B-page 9

TC4626/TC4627

Package Dimensions (Continued)

16-Pin SOIC (Wide)

PIN 1

.413 (10.49)
.398 (10.10)

.050 (1.27) TYP.

.019 (0.48)
.014 (0.36)

.299 (7.59)
.291 (7.40)

.012 (0.30)
.004 (0.10)

.419 (10.65)
.398 (10.10)

.104 (2.64)
.097 (2.46)

8

°

MAX.

.013 (0.33)
.009 (0.23)

.050 (1.27)
.016 (0.40)

Dimensions: inches (mm)

DS21426B-page 10



2002 Microchip TechnologyInc.

TC4626/TC4627

Sales and Support

Data Sheets

Products supportedby a preliminary DataSheetmayhave an erratasheetdescribing minor operational differences and recom­mendedworkarounds.To determineif an errata sheet existsfora particular device, pleasecontact one of the following:

1. Your local Microchip sales office

2. The Microchip CorporateLiteratureCenter U.S. FAX: [phone]

3. The Microchip Worldwide Site (www.microchip.com)
Pleasespecify which device, revision of silicon and Data Sheet (includeLiterature #) you are using.

New Customer Notification System

Register on our web site (www.microchip.com/cn)to receive the most currentinformationon our products.

 2002 Microchip Technology Inc. DS21426B-page11

TC4626/TC4627

NOTES:

DS21426B-page12  2002 Microchip Technology Inc.

TC4626/TC4627

Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com­ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con­veyed, implicitly or otherwise, under any intellectual property
rights.

Trademarks

The Microchip name and logo, the Microchip logo, FilterLab,
K

EELOQ,microID,MPLAB,PIC,PICmicro,PICMASTER,

PICSTART, PRO MA TE, SEEVAL and The Embedded Control
SolutionsCompany areregiste red trademarksof MicrochipTech­nologyIncorp or ated in the U.S.A. and other countries .

dsPIC, ECONOMONI TOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPA SM, MPLIB, MPLINK, MPSIM,
MXDEV,MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
TechnologyIncorporated in the U.S.A.

Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip TechnologyIncorporated in t he U.S.A.

All other trademarks mentioned herein are property of their
respective companies.

© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.

Printed on recycled paper.

Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its

®

PICmicro
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systemsisISO 9001certified.



2002 Microchip TechnologyInc. DS21426B-page 13

8-bit MCUs, KEELOQ®code hopping

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Korea

Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: [phone] Fax: [phone]

Singapore

Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: [phone] Fax: [phone]

Taiwan

Microchip Technology Taiwan
11F-3, No. 207
Tung HuaNorth Road
Taipei, 105, Taiwan
Tel: [phone] Fax: [phone]

EUROPE

Denmark

Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: [phone] Fax: [phone]

France

Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: [phone] Fax: [phone]

Germany

Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: [phone] Fax: [phone]

Italy

Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: [phone] Fax: [phone]

United Kingdom

Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, EnglandRG41 5TU
Tel: [phone] Fax: [phone]

05/01/02

DS21426B-page 14

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2002 Microchip Technology Inc.