Datasheet STW15NK50Z, STP15NK50ZFP, STP15NK50Z, STB15NK50Z-1, STB15NK50Z Datasheet (SGS Thomson Microelectronics)

Page 1
STP15NK50Z/FP, STB15NK50Z
STB15NK50Z-1, STW15NK50Z
N-CHANNEL500V-0.30-14ATO-220/FP/D2PAK/I2PAK/TO-247
TYPE V
STP15NK50Z STP15NK50ZFP STB15NK50Z STB15NK50Z-1 STW15NK50Z
TYPICAL R
EXTREMELY HIGHdv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSICCAPACITANCES
VERY GOOD MANUFACTURING
500 V 500 V 500 V 500 V 500 V
(on) = 0.30
DS
DSS
R
DS(on)
< 0.34 < 0.34 < 0.34 < 0.34 < 0.34
I
D
14 A 14 A 14 A 14 A 14 A
Pw
160 W
40 W 160 W 160 W 160 W
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip­based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special careis tak­en to ensure a very good dv/dt capability for the most demanding applicat ions. Such series comple­ments S T full range of high voltage MOSFETs in­cluding revolutionary MDm es h™ products.
TO-220
1
3
2
TO-220FP
TO-247
3
2
1
I2PAK
D2PAK
INTERNAL SCHEMATIC DIAGRAM
3
2
1
3
1
APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP15NK50Z P15NK50Z TO-220 TUBE
STP15NK50ZFP P15NK50ZFP TO-220FP TUBE STB15NK50ZT4 B15NK50Z
STB15NK50Z B15NK60Z
STB15NK50Z-1
B15NK50Z
STW15NK50Z W15NK50Z TO-247 TUBE
2
PAK
D
2
D
I
2
PAK
PAK
(ONLY UNDER REQUEST)
TAPE & REEL
TUBE
TUBE
1/14August 2002
Page 2
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP15NK50Z STB15NK50Z
STB15NK50Z-1
I
V
DM
P
V
DGR
V
I I
TOT
DS
GS D D
Drain-source Voltage (VGS=0) Drain-gate Voltage (RGS=20kΩ) Gate- source Voltage ± 30 V Drain Current (continuous) at TC= 25°C Drain Current (continuous) at TC= 100°C
()
Drain Current (pulsed) 56 56 (*) 56 A Total Dissipation at TC= 25°C
14 14 (*) 14 A
8.8 8.8 (*) 8.8 A
160 40 160 W
Derating Factor 1.28 0.32 1.28 W/°C
I
GS
V
ESD(G-S)
Gate-source Current (DC) ± 20 mA Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
T
j
T
stg
() Pulse width limited by safe operating area
14A, di/dt 200A/µs,VDD≤ V
(1) I
SD
(*) Limited only by maximum temperature allowed
Insulation Withstand Voltage (DC) - 2500 - V Operating Junction Temperature
Storage Temperature
(BR)DSS,Tj≤TJMAX.
STP15NK50ZFP STW15NK50Z
500 V 500 V
-55 to 150
-55 to 150
°C °C
THERMAL DATA
TO-220
2
I
PAK
Rthj-case Thermal Resistance Junction-case Max 0.78 3.1 0.78 °C/W
Rthj-pcb Thermal Resistance Junction-pcb Max (#) 60 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 50 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
2
D
TO-220FP TO-247
PAK
300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
max)
j
Single Pulse Avalanche Energy (starting T
= 25 °C, ID=IAR,VDD=50V)
j
14 A
300 mJ
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 30 V
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD c apability, but also to make them sa fely absorb pos sible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achie ve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid t he usage of external components.
2/14
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STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OT HERWISE SPECIFIED)
ON/OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source Breakdown Voltage
I
I
GSS
V
GS(th)
R
DS(on)
DSS
Zero Gate Voltage Drain Current (V
GS
=0)
Gate-body Leakage Current (V
DS
=0) Gate Threshold Voltage Static Drain-source On
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS=15V,ID=7A 12 S
g
fs
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(3) Equivalent Output
C
oss eq.
C
iss
C
oss
C
rss
Capacitance
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q Q Q
t
r
g gs gd
Turn-on Delay Time Rise Time
Total Gate Charge Gate-Source Charge Gate-Drain Charge
ID=1mA,VGS= 0 500 V
V
= Max Rating
DS
VDS= Max Rating, TC= 125 °C V
= ± 20V ±10 µA
GS
V
DS=VGS,ID
= 100µA
3 3.75 4.5 V
1
50
VGS=10V,ID= 7 A 0.30 0.34
=25V,f=1MHz,VGS= 0 2260
V
DS
264
64
VGS=0V,VDS= 0V to 400V 150 pF
VDD=250V,ID=7A RG= 4.7VGS=10V
20 23
(Resistive Load see, Figure 3) VDD=400V,ID=14A,
V
=10V
GS
76 15 40
106 nC
µA µA
pF pF pF
ns ns
nC nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD= 250 V, ID=7A R
=4.7ΩVGS=10V
G
62 15
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time Cross-over Time
Off-voltage Rise Time
= 400V, ID=14A,
V
DD
RG=4.7Ω, VGS= 10V (Inductive Load see, Figure 5)
13 11 28
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
Source-drain Current
(2)
Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
is defined as a constant equivalent capacitance giving the same charging time as C
oss eq.
.
V
DSS
ISD=14A,VGS=0 I
SD
VDD=29V,Tj= 150°C (see test circuit, Figure 5)
= 14 A, di/dt = 100A/µs
428
4.2 20
when VDSincreases from 0 to 80%
oss
14 56
1.6 V
ns ns
ns ns ns
A A
ns
µC
A
3/14
Page 4
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
Safe Operating Area For TO-220 /D2PAK/ I2 PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D2PAK/ I2PAK
Thermal Impedance For TO-220FP
Safe Operating Area For TO-247
4/14
Thermal Impedance For TO-247
Page 5
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
Output Characteristics
Transconductance
Transfer Characteristics
Static Drain-source O n Resistance
Gate Charge vs Gate-so urce Voltage
Capacitance Variations
5/14
Page 6
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
Normalized On Resistance vs Temp eratureNormalized Gate Threshold Voltage vs Temp.
Source-drain Diode Forward Ch aracteristics
Maximum Avalanche Energy vs Temperature
Normalized BVDSS vs Temperature
6/14
Page 7
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
Fig. 2: Unclamped Inductive WaveformFig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching And Di ode Recovery Times
Fig. 4: Gate Charge tes t Circuit
7/14
Page 8
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
E
P011C
TO-220 MECHANICAL DATA
DIM.
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
A
C
D
8/14
L5
Dia.
L7
D1
L6
L2
L9
F1
G1
F
H2
G
F2
L4
Page 9
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
TO-220FP MECHANICAL DATA
DIM.
A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039 F1 1.15 1.5 0.045 0.067 F2 1.15 1.5 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
E
A
D
B
L3
L6
L7
¯
F1
F
G1
H
G
F2
123
L2
L5
L4
9/14
Page 10
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
D2PAK MECHANICAL DATA
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
D1 8 0.315
E 10 10.4 0.393 E1 8.5 0.334
G 4.88 5.28 0.192 0.208
L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068
mm. inch
M 2.4 3.2 0.094 0.126
R 0.4 0.015 V2
3
10/14
1
Page 11
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
P011P5/E
TO-262 (I2PAK) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067
C 0.45 0.6 0.017 0.023
C2 1.23 1.36 0.048 0.053
D 8.95 9.35 0.352 0.368
e 2.4 2.7 0.094 0.106
E 10 10.4 0.393 0.409
L 13.1 13.6 0.515 0.531 L1 3.48 3.78 0.137 0.149 L2 1.27 1.4 0.050 0.055
mm inch
C
A
A1
C2
B2
B
e
E
L1
L2
D
L
11/14
Page 12
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
TO-247 MECHANICAL DATA
DIM.
A 4.85 5.15 0.19 0.20 D 2.20 2.60 0.08 0.10 E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05 F1 3 0.11 F2 2 0.07 F3 2 2.40 0.07 0.09 F4 3 3.40 0.11 0.13
G 10.90 0.43 H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79 L1 3.70 4.30 0.14 0.17 L2 18.50 0.72 L3 14.20 14.80 0.56 0.58 L4 34.60 1.36 L5 5.50 0.21
M 2 3 0.07 0.11
V
V2
Dia 3.55 3.65 0.14 0.143
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
60º 60º
12/14
Page 13
STP15NK50Z, STP15N K 50ZFP, STB15NK50 Z, STB15NK50Z-1, STW15NK50Z
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT (suffix ”T4”)*
TUBE SHIPMENT (no suffix)*
REEL MECHANICAL DATA
DIM.
A 330 12.992 B 1.5 0.059 C 12.8 13.2 0.504 0.520 D 20.2 0795 G 24.4 26.4 0.960 1.039 N 100 3.937 T 30.4 1.197
mm inch
MIN. MAX. MIN. MAX.
TAPE MECHANICAL DATA
DIM.
A0 10.5 10.7 0.413 0.421 B0 15.7 15 .9 0.618 0.626
D 1.5 1.6 0.059 0.063
D1 1.59 1.61 0.062 0.063
E 1.65 1.85 0. 065 0.073
F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082
R 50 1.574
T 0.25 0.35 0.0098 0.0137
W 23.7 24.3 0.933 0.956
* on sales type
mm inch
MIN. MAX. MIN. MAX.
BASE QTY BULK QTY
1000 1000
13/14
Page 14
STP15NK50Z, STP15N K 50ZFP, STB15NK 50Z, STB15NK50Z-1, STW15NK50Z
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of su ch in formation nor for any in fringement of patents or other rights of third parties w hich may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously suppli ed. STMi croelect ronics pr oducts are not author ized for use as cr itical component s in li fe suppo rt devi ces or systems without express written approval of STMicroelectronics.
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