Page 1
STH15NA50/FI
STW15NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
STH 15NA50
STH 15NA50FI
STW15NA50
■ TYPICAL R
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
DS(on)
DSS
500 V
500 V
500 V
= 0.33 Ω
R
DS(on)
<0.4Ω
<0.4Ω
<0.4Ω
I
D
14.6 A
9.3 A
14.6 A
o
C
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The optimized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
and gate charge, unequalled ruggedness
DS(on)
and superior switching performance.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
TO-247
3
2
1
3
2
TO-218 ISOWATT218
1
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST H/STW15NA50 STH 15NA50FI
V
V
V
I
DM
P
V
T
(•) Pulsewidth limited bysafe operating area
November 1996
Drain - s ource Voltage (VGS=0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ)500V
DGR
Gate-source Voltage ± 30 V
GS
Drain Current (continuous) at Tc=25oC14.69.3A
I
D
Drain Current (continuous) at Tc=100oC9.2 5.5A
I
D
(•) Drain Current (pulsed) 58.4 58.4 A
Total Di ssipation at Tc=25oC 190 80 W
tot
Derat ing Factor 1.52 0.64 W/
Ins ulation Withs t and Voltage (DC) 4000 V
ISO
St or a ge Tem perature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
o
o
C
C
C
1/11
Page 2
STH15NA50/FI - STW15NA50
THERMAL DATA
TO - 218/ TO-247 IS OWATT218
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max 0.66 1.56
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng T
Repetitive Avalanc he Energ y
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R ep et itive
(Tc= 100oC, pulse width limited by Tjmax, δ <1%)
30
0.1
300
14.6 A
850 mJ
30 mJ
9.2 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
ID=250µAVGS= 0 500 V
Break d own Volta ge
I
DSS
I
GSS
Zer o Gate Volt age
Drain Current (VGS=0)
Gat e- body Leak age
Current (V
DS
=0)
VDS=MaxRating
VDS= Max Rating x 0 .8 Tc=125oC
= ± 30 V ± 100 nA
V
GS
25
250
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA 2.25 3 3.75 V
St at ic Drain-s our ce O n
VGS=10V ID= 7.5 A 0.33 0.4 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
14.6 A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=7.5A 9 13 S
VDS=25V f=1MHz VGS= 0 2500
345
105
3250
450
140
µA
µA
pF
pF
pF
2/11
Page 3
STH15NA50/FI - STW15NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T im e
t
Rise Time
r
Turn-on C urrent S lope VDD=400V ID=15A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Co ndition s Mi n. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=225V ID=7.5A
RG=4.7 Ω VGS=10V
24
37
(see test circuit, figure 3)
225 A/µs
RG=47 Ω VGS=10V
(see test circuit, figure 5)
VDD= 400 V ID=15A VGS=10V 110
15
55
VDD=400V ID=15A
RG=4.7 Ω VGS=10V
(see test circuit, figure 5)
25
17
45
34
50
140 nC
35
24
60
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndition s Mi n. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
14.6
58.4
(pulsed)
V
(∗) Forward On Volt age ISD=15A VGS=0 1.6 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 15 A di/dt = 100 A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
640
12.8
Charge
I
RRM
Reverse Recovery
40
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Areas For TO-218 and TO-247 Safe Operating Areas For ISOWATT218
A
A
ns
µC
A
3/11
Page 4
STH15NA50/FI - STW15NA50
Thermal ImpedeanceFor TO-218 and TO-247
Derating Curve For TO-218 and TO-247
Thermal Impedance For ISOWATT218
Derating Curve For ISOWATT218
Output Characteristics
4/11
Transfer Characteristics
Page 5
STH15NA50/FI - STW15NA50
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-sourceVoltage Capacitance Variations
Temperature
Normalized On Resistance vs TemperatureNormalized Gate Threshold Voltage vs
5/11
Page 6
STH15NA50/FI - STW15NA50
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode ForwardCharacteristics
6/11
Page 7
STH15NA50/FI - STW15NA50
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 2: Unclamped Inductive Waveforms
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/11
Page 8
STH15NA50/FI - STW15NA50
TO-247 MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 5.3 0.185 0.208
A1 2.87 0.113
A2 1.5 2.5 0.059 0.098
b 1 1.4 0.039 0.055
b1 2.25 0.088
b2 3.05 3.43 0.120 0.135
C 0.4 0.8 0.015 0.031
D 20.4 21.18 0.803 0.833
e 5.43 5.47 0.213 0.215
E 15.3 15.95 0.602 0.628
L 15.57 0.613
L1 3.7 4.3 0.145 0.169
Q 5.3 5.84 0.208 0.230
ØP 3.5 3.71 0.137 0.146
mm inch
8/11
C
A
b1
A1
b
e
b2
A2
Q
D
L1
L
ø
E
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STH15NA50/FI - STW15NA50
TO-218 (SOT-93) MECHANICAL DATA
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.7 4.9 0.185 0.193
C 1.17 1.37 0.046 0.054
D 2.5 0.098
E 0.5 0.78 0.019 0.030
F 1.1 1.3 0.043 0.051
G 10.8 11.1 0.425 0.437
H 14.7 15.2 0.578 0.598
L2 – 16.2 – 0.637
L3 18 0.708
L5 3.95 4.15 0.155 0.163
L6 31 1.220
R – 12.2 – 0.480
Ø 4 4.1 0.157 0.161
mm inch
E
A
C
L5
D
L6
L3
L2
H
G
Ø
F
R
123
P025A
9/11
Page 10
STH15NA50/FI - STW15NA50
ISOWATT218 MECHANICAL DATA
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 5.35 5.65 0.210 0.222
C 3.3 3.8 0.130 0.149
D 2.9 3.1 0.114 0.122
D1 1.88 2.08 0.074 0.081
E 0.45 1 0.017 0.039
F 1.05 1.25 0.041 0.049
G 10.8 11.2 0.425 0.441
H 15.8 16.2 0.622 0.637
L1 20.8 21.2 0.818 0.834
L2 19.1 19.9 0.752 0.783
L3 22.8 23.6 0.897 0.929
L4 40.5 42.5 1.594 1.673
L5 4.85 5.25 0.190 0.206
L6 20.25 20.75 0.797 0.817
M 3.5 3.7 0.137 0.145
N 2.1 2.3 0.082 0.090
U 4.6 0.181
L3
N
E
A
D
C
L5
M
H
L2
L6
L1
D1
L4
F
U
G
123
P025C
10/11
Page 11
STH15NA50/FI - STW15NA50
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such informationnor for any infringement of patents or other rightsof third parties which mayresults fromits use. No
licenseis granted by implication orotherwise under any patentor patent rights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublication are subject to change withoutnotice. Thispublication supersedes andreplacesall informationpreviously supplied.
SGS-THOMSONMicroelectronics products are not authorizedfor use ascriticalcomponents in lifesupportdevicesor systems withoutexpress
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics -Printed in Italy- AllRightsReserved
Australia- Brazil -Canada -China - France- Germany - HongKong- Italy - Japan- Korea- Malaysia - Malta- Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland-Taiwan - Thailand- UnitedKingdom - U.S.A
SGS-THOMSONMicroelectronics GROUPOF COMPANIES
.
11/11
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