Datasheet STW150NF55, STP150NF55, STB150NF55 Datasheet (SGS Thomson Microelectronics)

N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247

TYPE

STB150NF55
STP150NF55
STP150NF55

■ TYPICAL R

■ SURFACE-MOUNTING D

V

DSS

55 V
55 V
55 V

(on) = 0.005 Ω

DS

POWER PACKAGE

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on­resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS

■ AUTOMOTIVE

R

DS(on)

<0.006

Ω

<0.006

Ω

<0.006

Ω

2

PAK (TO-263)

I

D

120 A(**)
120 A(**)
120 A(**)

STB150NF55 STP150NF55

STW150NF55

STripFET™ II POWER MOSFET

AUTOMOTIVE SPECIFIC

3

1

D2PAK

TO-263

(Suffix “T4”)

2

1

TO-220

INTERNAL SCHEMATIC DIAGRAM

TO-247

3

Ordering Information

STB150NF55T4 B150NF55

SALES TYPE MARKING PACKAGE PACKAGING

STP150NF55 P150NF55 TO-220 TUBE
STW150NF55 W150NF55 TO-247 TUBE

2

D

PAK

T APE & REEL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

(**) Drain Current (continuous) at T

I

D

I

D

(

I

DM

P

tot

Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

55 V
55 V

Gate- source Voltage ± 20 V

= 25°C

C

Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 480 A
Total Dissipation at TC = 25°C

120 A
106 A

300 W

Derating Factor 2.0 W/°C

(1)

dv/dt

E

AS

T

stg

T

j

Pulse widt h l i m i ted by safe op erating area.

(

•)

(**) Curre nt Limited by Pac kage

Peak Diode Recovery voltage slope 8 V/ns

(2)

Single Pulse Avalanche Energy 850 mJ
Storage Temperature
Operating Junction Temperature

(1) ISD ≤120A, di/dt ≤200A/µs, VDD ≤ V

(2) Starting Tj = 25 oC, ID = 60 A, VDD = 30V

-55 to 175 °C

(BR)DSS

, Tj ≤ T

October 2002

JMAX

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STB150NF55 STP150NF55 STW150NF55

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

Typ

0.5

62.5
300

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA VGS = 0

D

55 V

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

V

= ± 20 V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

= VGS I

DS

V

= 10 V ID = 60 A

GS

= 250 µA

D

24V

0.005 0.006

V

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

15 V ID= 60 A

DS =

= 25V, f = 1 MHz, VGS = 0

V

DS

160 S

4400
1050

350

µA
µA

Ω

pF
pF
pF

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STB150NF55 STP150NF55 STW 150NF55

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 27.5 V ID = 60 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

g

Q

gs

Q

gd

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD=27.5 V ID=120A VGS= 10V

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 27.5 V ID = 60 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s af e operatin g area.

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 120 A VGS = 0

SD

= 120 A di/dt = 100A/µs

I

SD

V

= 25 V Tj = 150°C

DD

(see test circuit, Figure 5)

35

180

140

35
70

140

80

130
350

7.5

170 nC

120
480

1.5 V

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Thermal ImpedanceSafe Operating Area

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STB150NF55 STP150NF55 STW150NF55

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

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STB150NF55 STP150NF55 STW 150NF55

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature.

. .

Power Derating vs Tc Max Id Current vs Tc.

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STB150NF55 STP150NF55 STW150NF55

Thermal Resistance Rthj-a vs PCB Copper Area Max Power Dissipation vs PCB Copper Area

Allowable Iav vs. Time in Avalanche

The previous curve gives the safe operating area for unclamped inductive loads, single pulse or repetitive,
under the following conditions:

P
E

= 0.5 * (1.3 * BV

D(AVE)

= P

AS(AR)

D(AVE)

* t

AV

DSS

* IAV)

Where:
I

is the Allowable Current in Avalanche

AV

P
t

AV

To derate above 25

is the Average Power Dissipation in Avalanche (Single Pulse)

D(AVE)

is the Time in Avalanche

o

C, at fixed IAV, the following equation must be applied:

= 2 * (T

I

AV

jmax

- T

CASE

)/ (1.3 * BV

DSS

* Zth)
Where:
Z

= K * Rth is the value coming from Normalized Thermal Response at fixed pulse width equal to TAV .

th

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STB150NF55 STP150NF55 STW 150NF55

SPICE THERMAL MODEL

Parameter

CTHERM1 5 - 4 0.011
CTHERM2 4 - 3 0.0012
CTHERM3 3 - 2 0.05
CTHERM4 2 - 1 0.1

RTHERM1 5 - 4 0.09
RTHERM2 4 - 3 0.02
RTHERM3 3 - 2 0.11
RTHERM4 2 - 1 0.17

Node Value

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STB150NF55 STP150NF55 STW150NF55

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 4: Gate Charge Test Circuit

Fig. 3.1: Inductive Load Switching and Diode Re-

covery Ti m e s Wav e form

Fig. 4.1: Gate Charge Test Waveform

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STB150NF55 STP150NF55 STW 150NF55

Fig. 5: Unclamped Inductive Load Test Circuit Fig. 5.1: Diode Recovery Times Waveform

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STB150NF55 STP150NF55 STW150NF55

D2PAK MECHANICAL DA TA

DIM.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.028 0.037
B2 1.14 1.7 0.045 0.067

C 0.45 0.6 0.018 0.024
C2 1.21 1.36 0.048 0.054

D 8.95 9.35 0.352 0.368
D1 8 0.315

E 10 10.4 0.394 0.409
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.591 0.624

L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.069

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0° 8° 0° 8°

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

0.106

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STB150NF55 STP150NF55 STW 150NF55

TO-247 MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209

D 2.2 2.6 0.087 0.102

E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429
H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

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STB150NF55 STP150NF55 STW150NF55

TO-220 MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027

F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067

G 4.95 5.15 0.194 0.203

G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409

L2 16.40 0.645
L3 28.90 1.137
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154

DIA 3.75 3.85 0.147 0.151

MIN. TYP. MAX. MIN. TYP. TYP.

mm. inch.

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STB150NF55 STP150NF55 STW 150NF55

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0. 520
D 20.2 0.795

G 24.4 26.4 0.960 1.039

N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1.85 0.065 0.073

F 11.4 11.6 0.449 0.456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0075 0.082

R50 1.574

T0.25 0.35 .0.0098 0.0137

W 23.7 24.3 0.933 0.956

mm inch

MIN. MAX. MIN. MAX.

* on sales type

BASE QTY BULK QTY

1000 1000

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STB150NF55 STP150NF55 STW150NF55

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