Datasheet STV5712 Datasheet (SGS Thomson Microelectronics)

Page 1
AND RECORD AMPLIFIER FOR VCR
PLAY-BACK MODE
LOW NOISE 68dB AMPLIFIERS FOR 2 HEADS
AUTOMATIC OFFSET CANCELLATION BETWEENTHE 2 SELECTEDHEADS
ONE PLAY-BACKOUTPUT
MODESELECTIONBY LOGIC INPUT
RECORDMODE
ONE INTEGRATED I/I CONVERTER WITH ACCURATE CONTROL OF TRANSCON­DUCTANCE
RECORD AMPLIFIER WITH AUTOMATIC PROTECTION AGAINST SHORTCIRCUIT
5V SUPPLYVOLTAGE
STV5712
ADVANCEDFM AUDIO PLAY-BACK
SO16 NARROW
(Plastic Micropackage)
ORDER CODE :STV5712
DESCRIPTION
The STV5712 is an advancedtwo head FM audio recordand play-backamplifier for VCR.
PIN CONNECTIONS
1 2 3 4 5 6 7 8
April 1996
V
CC
V2 C2 H2
GND1
H1 C1
FM OUT
16 15 14 13 12 11 10
V1 I
OUT
GND2 PROT V
MES
V
IN
SW REC
9
SW H
5712-01.EPS
1/8
Page 2
STV5712
BLOCK DIAGRAM
OUT
V1
I
GND2
16
1
CC
V
14
15
234
V2
13
C2
FUNCTIONAL DESCRIPTION
STV5712 is intended for 2 heads FM audio VCR applications.
Highperformancetechnologyallowsverylownoise levels (current and voltage). In play-backmode a special feature suppresses the DC offset when switching two channels.Optimized play-backout­put stagegives to the STV5712largecapability to directly drive a coaxial cable in order to reduce number of externalcomponents.
Only onepower supplyis necessaryfor play-back and record modes. The mode can be chosen throughalogic input.Aspecialcarehasbeentaken to avoid current peaks through the rotary trans­formers.
MESVIN
PROT
12
V
11
SW REC
SW H
910
S T V 5 7 1 2
5
6
78
H2
GND1
H1
C1
FM OUT
Duringplay-back mode,recordoutput is grounded via an internaltransistor and during record mode preamplifiersare turnedoff.
There is one output currentfor the two heads,the DC current and the AC characteristicscanbe very precisely controled with accurate external resis­tors.If recommendedresistancesare used,a±5% transconductanceaccuracy is guaranted.
The recording amplifier includes a protectionsys­temwhichprotectstheICand theapplicationboard against overheatingin case of short circuit on the recording transconductancecomponents.
STV5712is fullyprotected against ESD.
5712-02.EPS
ABSOLUTEMAXIMUMRATINGS
Symbol Parameter Value Unit
V
CC
T
J
Power Supply Voltage 6 V Junction Temperature + 150
THERMALDATA
Symbol Parameter Value Unit
Junction-ambient ThermalResistance Typ. 100
2/8
R
th (j-a)
o
C/W
o
C
5712-01.TBL
5712-02.TBL
Page 3
STV5712
ELECTRICAL OPERATINGCHARACTERISTICS (TA=25oC unlessotherwisespecified)
Power Consumption
Parameter
= 5V 25mA 35mA 60mA 80mA
V
CC
Note : 1. R1 = 5.6
Play-back Mode
=5V, no load on Pin V
V
CC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I V
CC1
Supply Current 25 35 mA Supply Voltage 4.75 5 5.25 V
CC
FM OUT
G
G
Pre-amplification Gain Sinus wave 1.6MHz
PB
Gain Difference of Output Signalon
PB
Pin FM OUT between Channel 1 and Channel 2
e
Equivalent Input VoltageNoise
N
Level
i
Equivalent Input Current Noise Pins H1, H2 3.6 5.0 pA ⁄√Hz
N
CRT Crosstalk Sinus wave 1.6MHz
Bandwidth Cut-off Frequency -3dB attenuation 50in parallel on
F
LCPB
F
HCPB
Input Capacitance Pins H1, H2 45 pF
IN
Pre-amplifier Input Resistance Pins
IN
H1, H2 Output Impedance DC 30 50
PB
DC Level at Pin FMOUT 1.8 2.4 3 V Head SwitchOffset 150 mV
DC
Second Harmonic Sinus wave 1.6MHz
PB1
V
V
SH
C R
Z
DCPB
OUT
400mV Input on Pin H1 or H2
on output,
PP
Sinus wave 1.6MHz
0.1mV
on inputs H1 or H2
PP
Input grounded via switching transistor on Pins H1, H2
100µV
, All switches combinated
PP
the input
At 1.6MHz 600
100µV
on input 500Ω//100pF
PP
Play-Back Record (1)
Typ. Max. Typ. Max.
63 68 73 dB
1.2 dB
0.34 0.5 nV⁄√Hz
-45 -40 dB
Low
0.1 MHz
High 8
-45 -40 dB
5712-03.TBL
MHz
5712-04.TBL
3/8
Page 4
STV5712
ELECTRICAL OPERATINGCHARACTERISTICS (TA=25oC unlessotherwisespecified)(continued)
Record Mode
=5V, Load resistor 50on PinI
V
CC
Transconductancenetwork definedby : R1 =5.6 1% Pins PROT/V
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CC2
I
OUT
I
max
I
BIAS
TR Transconductance V
Z
OUT
SH
F
LCREC
F
HCREC
Current Supply VCC=5V 60 80 mA
Max. Record Current 70 mA Biasing Current of the record
amplifier
Output Resistance 7 100 k Second Harmonic Output Current 40mAPPat1.6MHz -43 -38 dB
REC
Bandwidth Cut-off Frequency -3dB attenuation
Maximum Input Current on Pin PROT
Maximum SaturationVoltage on Pin PROT
Input Resistance Equivalent value of R3 resistor 500 700 900
OUT
MES
R2 =1k 1% PinsV R3 =7501% Pins V
MES/VIN IN
33 40 47 mA
= 200mV
IN
PP
Output current 60mA
PP
Low
220 mA/V
High 5
5V on Pin PROT 150 250 400 mA
Input current 50mA 100 150 mV
0.1 MHz MHz
PP
5712-05.TBL
SwitchingLevels
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SWH1
V
SWL1
I
SWH1
I
SWL1
V
SWH2
V
SWL2
I
SWH2
I
SWL2
t
ON1
t
OFF1
t
ON2
t
OFF2
Head SelectionPin SW
Mode SelectionPin SW REC
Selection Pin SW Transient Response
Selection Pin SW REC Transient Response
Head number 1 (high level) 2.4 V
CC
Head number 2 (low level) 0 1.5 V Input current (high level) 20 50 µA Output current (low level) 20 50 µA Record mode (high level) 2.4 V
CC
Play-back mode(low level) 0 1.5 V Input current (high level) 20 50 µA Output current (low level) 20 50 µA Delay time selection ON (output
250 500 ns
signalappears on Pin FM OUT) Delay time selection OFF (output
250 500 ns
signaldisappears on Pin FM OUT) Delay time selection ON (output
signalappears on Pin I
OUT
)
Delay time selection OFF (output
440 µs
1.3 10 ms
signalappears on Pin FM OUT)
V
V
5712-06.TBL
4/8
Page 5
STV5712
ELECTRICAL OPERATINGCHARACTERISTICS (TA=25oC unlessotherwisespecified)(continued)
Power Supply
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
SVR Supply Voltage Rejection 0.5mV
Positive Supply VoltagePin V
CC
CC
75µVPPon Pin H1, H2
on Pin V
PP
Measurement on Pin FM OUT
INPUT/OUTPUTS EQUIVALENT INTERNAL DIAGRAM
CC
4.75 5 5.25 V 15 20 dB
5712-07.TBL
Pins : C1, C2
Pin : FM OUT
4k
1.5pF
7.5k
400
Pin : SW
V
CC
15k
V
CC
10k
47k
1k
5712-03.EPS
Pin : V
MES
V
CC
5pF
500
800
0.5pF
10k
5712-04.EPS
V
REC
6pF
75
18
5712-05.EPS
5712-06.EPS
5/8
Page 6
STV5712
INPUT/OUTPUTS EQUIVALENT INTERNAL DIAGRAM (continued)
Pin : V
IN
750
Pin : PROT
750
Pin s : V1,V
V
CC
6pF
2
V
CC
V1
5712-07.EPS
Pin : V
CC
5712-08.EPS
0V/5V
800
Pin : I
VCC5V
6/8
OUT
800
5712-09.EPS
5712-10.EPS
Pins : H1, H2
V
CC
120k
ES D
protection
2.8mA
in play-back
V
MES
5712-11.EPS
2.1V
H1 H2
5712-12.EPS
Page 7
APPLICATIONDIAGRAM
R3 750
STV5712
V
IN
C7 22nF
R1
5.6
I
11
R2 1k
111213141516
910
R4 10k
C8 1nF
S
SW-REC
SW-H
T V
5 7
I
12
1
234
C2
22nF
578
6
C3
C4 22nF
22nF
C1 22nF
C6 22nF
1 2
GND
FM OUT
C5 22
µ
L1 22µH
F
V
CC
5712-13.EPS
7/8
Page 8
STV5712
PACKAGE MECHANICAL DATA
16 PINS- PLASTICMICROPACKAGE (SO NARROW)
Dimensions
Min. Typ. Max. Min. Typ. Max.
A 1.75 0.069 a1 0.1 0.25 0.004 0.009 a2 1.6 0.063
b 0.35 0.46 0.014 0.018
b1 0.19 0.25 0.007 0.010
C 0.5 0.020 c1 45
D 9.8 10 0.386 0.394
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 8.89 0.350
F 3.8 4.0 0.150 0.157
L 0.4 1.27 0.016 0.050
M 0.62 0.024
S8
Millimeters Inches
o
(typ.)
o
(Max.)
PM-SO16N.EPS
SO16N.TBL
Informationfurnished is believed to be accurate and reliable. However,SGS-THOMSON Microelectronicsassumes no responsibility for the consequences of use of such information nor for anyinfringement of patents or other rights of third partieswhich mayresult from its use. No licenceis granted by implication orotherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products arenot authorizedfor use as critical components in life support devicesor systems withoutexpress written approvalof SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics -All Rights Reserved
Purchase of I
2
I
C Patent. Rights to usethese components in a I2C system,is granted provided that thesystem conforms to
Australia - Brazil - Canada- China- France - Germany -Hong Kong- Italy- Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain -Sweden -Switzerland -Taiwan - Thailand - United Kingdom - U.S.A.
2
C Componentsof SGS-THOMSON Microelectronics,conveys a license under the Philips
2
the I
C Standard Specificationsas defined by Philips.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
8/8
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