STU36NB20
N-CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
DSS
R
DS(on)
I
D
ST U3 6NB20 200 V < 0 .065 Ω 36 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSICCAPACITANCES
■ GATECHARGEMINIMIZED
■ ± 30V GATE TO SOURCE VOLTAGERATING
DS(on)
=0.052 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
1
Max220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤36A, di/dt ≤ 200 A/µs,VDD≤ V
January 1998
This ispreliminary information on a new productnow in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS=0) 200 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- source Vo lt age ± 30 V
GS
I
Drain Cur rent (c on t inuous) a t Tc=25oC36A
D
I
Drain Cur rent (c on t inuous) a t Tc=100oC23A
D
200 V
(•) Drain Current (pul sed) 144 A
Tot al Dissip at ion at Tc=25oC160W
tot
Derating F actor 1.28 W/
1) Peak Diode Rec overy voltage slope 5.5 V/ns
Sto rage Tempe rature -65 to 150
stg
T
Max. Operating Ju nc tion T emperat ure 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
STU36NB20
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-case Max
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T y p
Maximum Lead Tem per a t u re F o r Soldering Purpos e
l
Avalanche Cur rent, Repet it i v e or Not-Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
0.78
62.5
0.5
300
36 A
450 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-sourc e
Breakdown V oltage
Zer o Gat e V o lt age
Drain Current (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=250µAVGS=0
I
D
o
@100
V
V
V
C
=MaxRating
DS
=MaxRating Tc=125oC
DS
= ± 30 V
GS
200 V
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID=18 A 0.052 0. 065 Ω
Resistance
I
D(on)
On State Drain Curre nt VDS>I
D(on)xRDS(on)max
36 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capac i t an c e
iss
Out put C apa c itance
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=18 A 10 19 S
VDS=25V f=1MHz VGS= 0 2800
750
100
3800
1000
140
µA
µA
pF
pF
pF
2/6
STU36NB20
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
r
Rise Tim e
t
VDD=100V ID=18A
=4.7 Ω VGS=10V
R
G
35
40
47
55
ns
ns
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Cha rge
gs
Gate-Drain Charge
gd
VDD=160V ID=36 A VGS=10V 70
22
35
95 nC
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-ov er Time
c
VDD=160V ID=36A
=4.7 Ω VGS=10V
R
G
18
22
42
24
30
57
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curre nt
(•)
Source-drain Curre nt
36
144
(pulsed)
(∗) For ward On Volt age ISD=36A VGS=0 1.5 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
= 3 6 A di/ dt = 100 A/µs
I
SD
=50V Tj=150oC
V
DD
350
2.3
Charge
Reverse Recov er y
13
Current
nC
nC
ns
ns
ns
A
A
ns
µC
A
3/6
STU36NB20
Fig. 1: Unclamped InductiveLoad TestCircuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: SwitchingTimesTest CircuitsFor
ResistiveLoad
Fig. 5: Test Circuit For Inductive Load Switching
And Diode RecoveryTimes
Fig. 4: Gate Charge test Circuit
4/6
Max220MECHANICAL DATA
STU36NB20
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.3 4.6 0.169 0.181
A1 2.2 2.4 0.087 0.094
A2 2.9 3.1 0.114 0.122
b 0.7 0.93 0.027 0.036
b1 1.25 1.4 0.049 0.055
b2 1.2 1.38 0.047 0.054
c 0.45 0.6 0.18 0.023
D 15.9 16.3 0.626 0.641
D1 9 9.35 0.354 0.368
D2 0.8 1.2 0.031 0.047
D3 2.8 3.2 0.110 0.126
e 2.44 2.64 0.096 0.104
E 10.05 10.35 0.396 0.407
L 13.2 13.6 0.520 0.535
L1 3 3.4 0.118 0.133
mm inch
D3 D1
D2
C
A
E
A2
A1
D
b1
b2
L1
L
b
e
P011R
5/6
STU36NB20
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent orpatent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in thispublication are subjectto change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare not authorizedfor use as critical componentsin life support devicesor systems without express
written approval ofSGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
6/6
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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