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®
STPS30L30CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
2x15A
30 V
Tj (max) 150 °C
V
(max) 0.37 V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
n
NEGLIGIBLE SWITCHING LOSSES
n
EXTREMELY FAST SWITCHING
n
LOW FORWARD VOLTAGE DROP
n
n
LOW THERMAL RESISTANCE
AVALANCHE CAPABILITY SPECIFIED
n
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switch Mode Power Supply and high frequency
DC to DC converters.
2
Packaged in TO-220AB, D
PAK and I²PAK, these
devices are intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
A1
A2
A1
TO-220AB
STPS30L30CT
STPS30L30CR
A2
K
I2PAK
K
K
A2
A1
2
PAK
D
STPS30L30CG
A2
K
A1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
Tj
dV/dt
July 2003 - Ed: 5C
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Peak repetitive reverse current tp=2µsF=1kHz square
Non repetitive peak reverse current tp = 100µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise reverse voltage
δ = 0.5
Per diode
Per device
30 V
30 A
15
30
220 A
1A
3A
5300 W
- 65 to + 150 °C
150 °C
10000 V/µs
A
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STPS30L30CT/CG/CR
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-c)
Junction to case
Per diode
Total
R
th (c)
Coupling 0.1 °C/W
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage current
*
Forward voltage drop Tj = 25°C I
Tj = 25°C V
Tj = 125°C
Tj = 125°C I
Tj = 25°C I
Tj = 125°C I
R=VRRM
=15A
F
=15A
F
=30A
F
=30A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P = 0.24x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
F(AV)
+ 0.009 I
F2(RMS)
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
1.5
°C/W
0.8
1.5 mA
170 350 mA
0.46 V
0.33 0.37
0.57
0.43 0.5
PF(av)(W)
10
9
8
7
6
5
4
3
2
1
0
0 2 4 6 8 101214161820
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
IF(av)(A)
16
14
12
10
8
6
4
2
δ
0
0 25 50 75 100 125 150
=tp/T
Rth(j-a)=15°C/W
T
tp
Rth(j-a)=50°C/W
Tamb(°C)
Rth(j-a)=Rth(j-c)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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Page 3
STPS30L30CT/CG/CR
Fig. 4: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
IM(A)
250
225
200
175
150
125
100
75
IM
50
25
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=110°C
Fig. 6: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
IR(mA)
1E+3
1E+2
1E+1
Tj=150°C
Tj=125°C
Fig. 5: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
C(nF)
5.0
1.0
F=1MHz
Tj=25°C
1E+0
1E-1
Tj=25°C
1E-2
0 5 10 15 20 25 30
VR(V)
Fig. 8: Forward voltage drop versus forward
current (maximum values - per diode).
IFM(A)
200
100
Tj=150°C
(typical values)
Tj=125°C
10
Tj=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM(V)
0.1
12 51020 50
VR(V)
Fig. 9: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
circuit board FR4, e(Cu) = 35 µm)
(STPS30L30CG).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 4 8 12 16 20 24 28 32 36 40
S(Cu) (cm²)
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STPS30L30CT/CG/CR
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Cooling method: C
n
n
Recommended torque value: 0.55 m.N
n
Maximum torque value: 0.70 m.N
PACKAGE MECHANICAL DATA
2
PAK
I
E
L2
c2
D
L1
b2
L
b1
b
e
A1
DIMENSIONS
REF.
Millimeters Inches
Min. Max. Min. Max.
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
c
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
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Page 5
PACKAGE MECHANICAL DATA
2
PAK
D
L2
L
L3
E
A1
B2
B
G
* FLAT ZONE NO LESS THAN 2mm
C2
STPS30L30CT/CG/CR
DIMENSIONS
A
REF.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
A2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
M
*
V2
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
Millimeters Inches
Min. Max. Min. Max.
FOOT PRINT (in millimeters)
16.90
10.30
8.90
3.70
5.08
1.30
Ordering type Marking Package Weight Base qty Delivery mode
STPS30L30CT STPS30L30CT TO-220AB 2g 50 Tube
STPS30L30CG STPS30L30CG D
STPS30L30CG-TR STPS30L30CG D
STPS30L30CR STPS30L30CR I
n
Epoxy meets UL94,V0
Informationfurnished is believedto be accurateand reliable. However,STMicroelectronics assumes noresponsibility for theconsequences of
useof suchinformation nor forany infringement ofpatents or otherrights of thirdparties whichmayresult fromits use. Nolicense is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval ofSTMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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2
PAK 1.8g 50 Tube
2
PAK 1.8g 1000 Tape& reel
2
PAK 1.49g 50 Tube
http://www.st.com
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