VERY SMALL CONDUCTION LOSS ES
NEGLIGIBLE SWIT CHING LOS SE S
EXTRE MELY F AST SWI TCHI NG
A
A
LOW THERMAL RESISTANCE
HIGH DISSIPATION M INIATURE PACKAGE
D
2
PAK
DESCRIPTION
Single Schottky rectifier suited for switchmode
power supply and high frequency DC to DC converters.
2
Packaged in D
PAK surface mount package , this
device is intended for use in low voltage, high frequency inverters, free wheeling and polarity pr otection applications.
ABSOLUTE RATINGS
(limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
Repetitive peak reverse voltage45V
RMS forward current 50A
Average forward currentTc = 150°C
δ
= 0.5
Surge non repetitive forward currenttp = 10 ms
30A
200A
Sinusoidal
I
RRM
Repetitive peak reverse currenttp = 2 µs
1A
F = 1kHz square
I
RSM
Non Repetitive peak reverse currenttp = 100µs square3A
TstgStorage temperature range- 65 to + 175
TjMaximum operating junction temperature*175°C
dV/dtCritical rate of rise of reverse voltage10000V/µs
dPtot
dTj
* :
October 1999 - Ed: 4A
1
<
Rth
thermal runaway condition for a diode on its own heatsink
(
)
j−a
°
C
1/5
Page 2
STPS3045G
THERMAL RE SISTA NC ES
SymbolParameterValueUnit
R
th (j-c)
Junction to case 1
°
STATIC ELECTRICAL CHARACTER ISTICS
SymbolParameterTests ConditionsMin.Typ.Max.Unit
*Reverse leakage currentTj = 25°CV
I
R
= V
R
RRM
500
Tj = 125°C2080mA
**Forward voltage dropTj = 125°CI
V
F
Tj = 25°CI
Tj = 125°CI
Pulse test :* tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2%
= 30 A0.530.63V
F
= 60 A0.84
F
= 60 A0.680.78
F
To evaluate the conduction losses use the following equation :
P = 0.48 x I
F(AV)
+ 0.005 I
F2(RMS)
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
25
20
15
10
5
0
0510152025303540
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
35
30
25
20
15
Rth(j-a)=30°C/W
10
tp
5
0
0255075100125150175
Rth(j-a)=Rth(j-c)
Tamb(°C)
δ
=tp/T
T
tp
2/5
Page 3
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values).
STPS3045G
Fig. 4:
junction to case versus pulse duration.
Relative variation of thermal impedance
IM(A)
400
350
300
250
200
150
100
I
M
50
0
1E-31E-21E-11E+0
Fig. 5:
t
δ
=0.5
t(s)
Reverse leakage current versus reverse
Tc=75°C
Tc=100°C
Tc=125°C
voltage applied (typical values)
IR(µA)
1E+5
1E+4
1E+3
Tj=150°C
Tj=125°C
Tj=100°C
Tj=75°C
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-41E-31E-21E-11E+0
Fig. 6:
Junction capacitance versus reverse
tp(s)
δ
=tp/T
T
tp
voltage applied (typical values).
C(nF)
5.0
1.0
F=1MHz
Tj=25°C
1E+2
1E+1
Tj=50°C
Tj=25°C
VR(V)
1E+0
051015202530354045
Fig. 7:
Forward voltage drop versus forward current
(maximum values).
IFM(A)
200
100
10
1
0.00.20.40.60.81.01.21.4
Typical values
Tj=125°C
Tj=25°C
Tj=125°C
VFM(V)
0.1
1251020 50
Fig. 8:
Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed c ircuit
board, copper thickness: 35µm)
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