Page 1
®
STPS3030CT/CG/CR
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
I
F(AV)
V
RRM
2x15A
30 V
Tj (max) 150°C
(max) 0.42 V
V
F
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES
■
NEGLIGIBLE SWITCHING LOSSES
■
EXTREMELY FAST SWITCHING
■
LOW FORWARD VOLTAGE DROP FOR
■
HIGHER EFFICIENCY
LOW THERMAL RESISTANCE
■
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual Schottky rectifier suited for switch Mode
Power Supply and high frequency DC to DC
converters.
2
Packaged in TO-220AB, D
PAK and I2PAK, this
device is intended for use in low voltage high
frequency inverters, free wheeling and polarity
protection applications.
A1
A2
K
A2
A1
D2PAK
STPS3030CG
K
A2
K
A1
TO-220AB
STPS3030CT
A2
K
A1
I2PAK
STPS3030CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
current
I
FSM
I
RRM
I
RSM
P
ARM
T
Tj
dV/dt
dPtot
*:
Surge non repetitive forward current tp = 10 ms Sinusoidal
Peak repetitive reverse current tp=2 µs square F=1kHz
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
stg
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated V
<
dTj Rth j a
July 2003 - Ed: 3A
Tc = 135°C
δ = 0.5
, Tj = 25°C)
R
Per diode
Per device
thermal runawaycondition for a diode on its own heatsink
−1()
30 V
30 A
15
30
250 A
1A
3A
4100 W
- 65 to + 150 °C
150 °C
10000 V/µs
A
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Page 2
STPS3030CT/CG/CR
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
Junction to case TO-220AB - D2PAK-I2PAK
Per diode
Total
R
th(c)
Coupling 0.4 °C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests Conditions Min. Typ. Max. Unit
*
I
R
V
F
Reverse leakage
current
*
Forward voltage drop Tj = 25°CI
Tj = 25°C VR=V
Tj = 125°C
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
=15A
F
=15A
F
=30A
F
=30A
F
RRM
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P=0.26xI
F(AV)
+ 0.0107 I
F2(RMS)
1.2
°C/W
0.8
0.23 1.0 mA
125 180
0.44 0.49 V
0.36 0.40
0.53 0.58
0.49 0.53
Fig.1:Conductionlossesversus average current.
P(W)
10
9
8
7
6
5
4
3
2
1
0
02468101214161820
δ = 0.05
δ = 0.1
δ = 0.2
I (A)F(av)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.01 1
p
10 100 1000
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5).
IF(av)(A)
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
Rth
(j-a)
=50°C/W
Rth
=Rth
(j-a)
Tamb(°C)
(j-c)
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
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Page 3
STPS3030CT/CG/CR
Fig. 5: Non repetitive surge peak forward
current versus overload duration (maximum
values).
IM(A)
250
225
200
175
150
125
100
75
50
25
0
1.E-03 1.E-02 1.E-01 1.E+00
t(s)
TC=25°C
TC=75°C
TC=125°C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
1.E+03
Tj=150°C
1.E+02
Tj=125°C
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
δ = 0.5
0.6
0.5
0.4
δ = 0.2
δ = 0.1
0.3
0.2
Single pulse
0.1
0.0
1.E-03 1.E-02 1.E-01 1.E+00
tp(s)
δ
=tp/T
T
tp
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
10.0
F=1MHz
V
osc
T
=30mV
=25°C
j
1.E+01
1.E+00
1.E-01
Tj=100°C
Tj=75°C
Tj=50°C
Tj=25°C
VR(V)
1.E-02
0 5 10 15 20 25 30
Fig. 9: Forward voltage drop versus forward
current.
IFM(A)
100
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
10
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Tj=25°C
(Maximum values)
V (V)FM
1.0
VR(V)
0.1
1 10 100
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (epoxy printed
board FR4, Cu = 35µm).
Rth(j-a)(°C/W)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
S(cm²)
D²PAK
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STPS3030CT/CG/CR
PACKAGE MECHANICAL DATA
I²PAK
E
L2
L1
b2
L
b1
b
e
c2
D
A1
REF. DIMENSIONS
Millimeters Inches
A
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
c
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
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Page 5
PACKAGE MECHANICAL DATA
D²PAK
L2
E
L
L3
B2
B
G
* FLAT ZONE NO LESS THAN 2mm
C2
A1
STPS3030CT/CG/CR
REF. DIMENSIONS
Millimeters Inches
A
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
A2
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
M
*
V2
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
Min. Max. Min. Max.
FOOTPRINT
10.30
8.90
16.90
5.08
1.30
3.70
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Page 6
STPS3030CT/CG/CR
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A
C
L7
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
■ COOLING METHOD : C
■
RECOMMENDED TORQUE VALUE : 0.55 M.N
■
MAXIMUM TORQUE VALUE : 0.70 M.N
Ordering type Marking Package Weight Base qty Delivery mode
STPS3030CT STPS3030CT TO-220AB 2.2 g 50 Tube
STPS3030CG STPS3030CG D²PAK 1.48 g 50 Tube
STPS3030CG-TR STPS3030CG D²PAK 1.48 g 1000 Tape & reel
STPS3030CR STPS3030CR I²PAK 1.49 g 50 Tube
■
EPOXY MEETS UL94,V0
Informationfurnishedis believed to be accurate and reliable. However, STMicroelectronics assumes no responsibilityforthe consequences of
useof such information nor for any infringement of patentsor other rights of third parties which mayresultfrom its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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