Page 1
®
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj 175°C
V
(max) 0.75 V
F
2x15A
150 V
STPS30150CT/CW/CFP
A1
K
A2
A2
K
A1
FEATURES AND BENEFITS
HIGH JUNCTION TEMPERATURE CAPABILITY
■
GOOD TRADE OFF BETWEEN LEAKAGE
■
TO-220FPAB
STPS30150CFP
CURRENT AND FORWARD VOLTAGE DROP
LOW LEAKAGE CURRENT
■
INSULATED PACKAGE: TO-220FPAB
■
Insulating voltage: 2000V DC
Capacitance: 45pF
AVALANCHE CAPABILITY SPECIFIED
■
DESCRIPTION
Dual center tap schottky rectifier designed for
TO-247
STPS30150CW
A1
A2
K
A1
TO-220AB
STPS30150CT
high frequency Switched Mode Power
Supplies.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive peak reverse voltage 150 V
RMS forward current 30 A
Average forward current
δ = 0.5
TO-220FPAB Tc = 110°C per diode
TO-220AB Tc = 155°C
per device
15 A
TO-247 30
P
I
FSM
ARM
T
Surge non repetitive forward current tp = 10 ms sinusoidal 220 A
Repetitive peak avalanche power tp = 1µs Tj = 25°C 10500 W
Storage temperature range - 65 to + 175 °C
stg
Tj Maximum operating junction temperature * 175 °C
dV/dt Criticalrate of rise of reverse voltage 10000 V/µs
A2
K
dPtot
*:
<
dTj Rth j a
July 2003 - Ed: 6C
thermal runaway condition for a diode on its own heatsink
−1()
1/6
Page 2
STPS30150CT/CW/CFP
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th (j-c)
R
th (c)
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
V
F
Pulse test : * tp=5ms,δ <2%
To evaluate the conduction losses use the following equation:
P=0.64xI
Junction to case TO-220FPAB Per diode
TO-220AB Per diode
TO-247 Per diode
TO-220FPAB Coupling 2.6
TO-220AB Coupling 0.1
TO-247 Coupling 0.1
(Per diode) + P(diode 2) x R
th(j-c)
* Reverse leakage current Tj = 25°C VR=V
th(c)
RRM
Tj = 125°C 8 mA
** Forward voltage drop Tj = 25° CI
Tj = 125°C I
Tj=25°CI
Tj = 125°C I
** tp = 380 µs, δ <2%
+ 0.0073 I
F(AV)
F2(RMS)
= 15 A 0.92 V
F
= 15 A 0.69 0.75
F
=30A 1
F
= 30 A 0.8 0.86
F
Total
Total
Total
4
3.3
1.6
0.85
1.5
0.8
6.5 µA
°C/W
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
14
12
10
8
6
4
2
0
0 1 2 3 4 5 6 7 8 9 101112131415161718
δ = 0.05
2/6
δ = 0.2
δ = 0.1
IF(av) (A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 2: Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
TO-220AB/TO-247/I²PAK/D²PAK
TO-220FPAB
Page 3
STPS30150CT/CW/CFP
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P( t)
ARM p
P (1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.1 0.01 1
p
10 100 1000
Fig. 5-1: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode).
IM(A)
250
200
150
100
IM
50
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=50°C
Tc=75°C
Tc=125°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P( t )
ARM p
P (25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
T (°C)
j
Fig.5-2:Non repetitive surgepeakforwardcurrent
versus overload duration (maximum values, per
diode) (TO-220FPAB only).
IM(A)
140
120
100
80
60
40
IM
20
0
1E-3 1E-2 1E-1 1E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration.
(TO-220FPAB)
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-3 1E-2 1E-1 1E+0 1E+1
tp(s)
δ
=tp/T
T
tp
3/6
Page 4
STPS30150CT/CW/CFP
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(µA)
1E+5
1E+4
1E+3
Tj=175°C
Tj=150°C
Tj=125°C
1E+2
1E+1
Tj=100°C
1E+0
Tj=25°C
VR(V)
1E-1
0 25 50 75 100 125 150
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=125°C
Typical values
Fig. 8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
C(pF)
1000
100
VR(V)
10
1 2 5 10 20 50 100 200
F=1MHz
Tj=25°C
10.0
Tj=125°C
Tj=25°C
1.0
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
4/6
Page 5
PACKAGE MECHANICAL DATA
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
STPS30150CT/CW/CFP
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
L7
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
PACKAGE MECHANICAL DATA
TO-220FPAB
H
Dia
L6
L2
L3
L5
D
L4
G1
G
F1
F2
F
DIMENSIONS
A
B
REF.
A 4.4 4.6 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
L7
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
E
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
5/6
Page 6
STPS30150CT/CW/CFP
PACKAGE MECHANICAL DATA
TO-247
V
V
H
L5
L
F1
V2
F(x3)
= =
F4
G
Dia.
F2
L1
F3
L3
L4 L2
D
ME
A
DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5 ° 5 °
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
■ Coolingmethod : C
■ Recommendedtorque value : 0.8m.N
■
Maximum torque value : 1.0m.N
Ordering Type Marking Package Weight Base qty Delivery mode
STPS30150CT STPS30150CT TO-220AB 2 g 50 Tube
STPS30150CFP STPS30150CFP TO-220FPAB 1.9 g 50 Tube
STPS30150CW STPS30150CW TO-247 4.4g 30 Tube
■
Epoxy meets UL94, V0
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
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