Datasheet STPS2L30A Datasheet (SGS Thomson Microelectronics)

®

LOW DROP POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTICS

STPS2L30A

I

F(AV)

V

RRM

2 A

30 V

Tj (max) 150 °C

(max) 0.375 V

V

F

FEATURES AND BENE FITS

LOW COST DEVICE WITH LOW DROP
FORWARD VOLTAGE FOR LESS POWER
DISSIPATION.

OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH LEADS TO THE HIGHEST
YIELD IN THE APPLICATIONS.

HIGH POWER SURFAC E M OUNT MINIATURE
PACKAGE.

DESCR IPT ION

Single Schottky rectifier suited t o Switched Mode
Power Supplies and high frequency DC to DC
converters, freewheel diode and integrated circuit
latch up protection.

Packaged in SMA, this device is especially
intended for use in parallel with MOSFETs in
synchronous rectification.

SMA

JEDEC DO-214AC

ABSOLUTE RATINGS

(limiting values)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

T

stg

Tj Maximum operating junction temperature * 150

Repetitive peak reverse voltage 30 V
RMS forward current 10 A
Average forward current TL = 120°C

δ

= 0.5 2 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Repetitive peak reverse current tp = 2 µs F = 1kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 150

°
°

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

dPtot

* :

August 1999 - Ed: 2A

dTj

<

1

Rth(j−a

thermal runaway condition for a diode on its own heatsink

)

C
C

1/4

STPS2L30A

THERMAL RESISTANCES

Symbol Parameter Value Unit

R

th (j-l)

Junction to lead 30

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameters Tests Conditions Min. Typ. Max. Unit

* Reverse leakage current Tj = 25°CV

I

R

= V

R

RRM

200

Tj = 100°C615mA

* Forward voltage drop Tj = 25°CI

V

F

= 2 A 0.45 V

F

Tj = 125°C 0.325 0.375
Tj = 25°CI

= 4 A 0.53

F

Tj = 125°C 0.43 0.51

Pulse test : * tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation :
P = 0.24 x I

F(AV)

+ 0.068 I

F2(RMS )

°

C/W

µ

A

Fig. 1:

Average forward power dissipation versus

average forward current.

PF(av)(W)

1.2

1.0

0.8

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

0.6

0.4

T

0.2

=tp/T

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

Fig. 3:

Non repetitive surge peak forward current

IF(av) (A)

δ

tp

versus overload duration (maximum values).

IM(A)

10

8

6

4

I

M

2

0

1E-3 1E-2 1E-1 1E+0

t

δ

=0.5

t(s)

Ta=25°C

Ta=50°C

Ta=100°C

Fig. 2:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

2.2

2.0

1.8

Rth(j-a)=Rth(j-l)

1.6

1.4

Rth(j-a)=120°C/W

1.2

1.0

0.8

0.6

T

0.4

0.2

=tp/T

δ

0.0
0 25 50 75 100 125 150

Fig. 4:

tp

Tamb(°C)

Relative variation of thermal impedance

junction to ambient versus puls e dur ation.

Zth(j-a)/Rth(j-a)

1.0

0.8

0.6

δ = 0.5

0.4

δ = 0.2

0.2

δ = 0.1

0.0

1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Single pulse

tp(s)

δ

=tp/T

T

tp

2/4

STPS2L30A

Fig. 5:

Reverse leakage current versus reverse

voltage applied (typical values).

IR(mA)

1E+2

1E+1

1E+0

Tj=150°C

Tj=125°C

Tj=100°C

1E-1

1E-2

Tj=25°C

VR(V)

1E-3

0 5 10 15 20 25 30

Fig. 7-1:

Forward voltage drop versus forward c ur-

rent (maximum values, high lev el).

IFM(A)

10.00

1.00

Typical values

Tj=150°C

Tj=125°C

Tj=25°C

Fig. 6:

Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

500

F=1MHz
Tj=25°C

100

VR(V)

10

12 5102030

Fig. 7-2:

Forward voltage drop versus forward c ur-

rent (typical values, low level).

IFM(A)

10.00

Tj=150°C

Tj=125°C

1.00

Tj=25°C

0.10

0.01

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

Fig. 7-3:

Forward voltage drop versus forward c ur-

Tj=100°C

VFM(V)

rent (maximum values, low lev el).

IFM(A)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60

Typical values

Tj=150°C

Tj=125°C

Tj=25°C

Tj=100°C

VFM(V)

0.10

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7

Fig. 8:

Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness:

Rth(j-a) (°C/W)

140
120
100

80
60
40

VFM(V)

20

0

012345

S(Cu) (cm²)

3/4

STPS2L30A

PACKAGE MECHANICAL DAT A

SMA

E1

D

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

E

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016

A1

C

L

A2

b

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

FOOT PRINT DIMENSIONS

(in millimeters)

1.65

1.45 1.45

2.40

Ordering type Marking Package Weight Base qty Delivery mode

STPS2L30A G30 SMA 0.068g 5000 Tape & reel

Band indicates cathode
Epoxy meets UL94,V0

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