Page 1
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
STPS2L25U
I
F(AV)
V
RRM
2 A
25 V
Tj (max) 150 °C
(max) 0.375 V
V
F
FEATURES AND BENEFITS
VERY LOW F O RW ARD VOLTAG E DROP FOR
LESS POWER DISSIPATION
OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCY IN THE APPLICATIONS
DESCR IPT ION
Single Schottky rectifier suited t o Switched Mode
Power Supplies and high frequency DC to DC converters.
Packaged in SMB (JEDEC DO214-AA), this device
is especially intended for use in parallel with MOSFETs in synchronous rectification.
ABSOLUTE RATINGS
(limiting values)
SMB
JEDEC DO-214AA
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Tj Maximum operating junction temperature * 150
Repetitive peak reverse voltage 25 V
RMS forward current 10 A
Average forward current TL = 125°C
δ
= 0.5 2 A
Surge non repetitive forward current tp = 10 ms Sinusoidal 75 A
Repetitive peak reverse current tp=2 µs square F=1kHz 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 150
°
°
dV/dt Critical rate of rise of reverse voltage 10000 V /µs
dPtot
* :
June 1999 - Ed: 3A
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
C
C
1/4
Page 2
STPS2L25U
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-l)
Junction to lead 25
STATIC ELECTRICAL CHARACTERISTICS
Symbol Tests Conditions Tests Conditions Min. Typ. Max. Unit
* Reverse leakage current Tj = 25°CV
I
R
= V
R
RRM
90
Tj = 125°C1530mA
* Forward voltage drop Tj = 25°CI
V
F
= 2 A 0.45 V
F
Tj = 125°C 0.325 0.375
Tj = 25°CI
= 4 A 0.53
F
Tj = 125°C 0.43 0.51
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.24 x I
F(AV)
+ 0.068 I
F2(RMS )
°
C/W
µ
A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
δ = 0.05
δ = 0.1
δ = 0.2
IF(av) (A)
δ = 0.5
δ
δ = 1
T
=tp/T
Fig. 2:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
tp
0.2
0.0
0 25 50 75 100 125 150
δ
T
=tp/T
Rth(j-a)=100°C/W
tp
Rth(j-a)=Rth(j-l)
Tamb(°C)
2/4
Page 3
STPS2L25U
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
10
9
8
7
Ta=25°C
6
5
Ta=50°C
4
3
I
M
2
1
0
1E-3 1E-2 1E-1 1E+0
Fig. 5:
t
δ
=0.5
t(s)
Reverse leakage current versus reverse
Ta=100°C
voltage applied (typical values).
IR(mA)
1E+2
1E+1
1E+0
Tj=150°C
Tj=125°C
Tj=100°C
Fig. 4:
Relative variation of thermal impedance
junction to ambient versus puls e dur ation.
Zth(j-a)/Rth(j-a)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Fig. 6:
Junction capacitance versus reverse
Single pulse
tp(s)
δ
=tp/T
T
tp
voltag e applie d ( typical values) .
C(pF)
500
F=1MHz
Tj=25°C
100
1E-1
1E-2
1E-3
0 5 10 15 20 25
Fig. 7:
Forward voltage drop versus forward cur-
Tj=25°C
VR(V)
rent (maximum values).
IFM(A)
10.00
1.00
0.10
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Typical values
Tj=150°C
Tj=125°C
Tj=25°C
Tj=100°C
VFM(V)
10
12 5102030
Fig. 8:
Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
120
100
80
60
40
VR(V)
20
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
S(Cu) (cm²)
3/4
Page 4
STPS2L25U
PACKAGE MECHANICAL DAT A
SMB
DIMENSIONS
E1
E
C
L
FOOT PRINT DIMENSIONS
D
A1
A2
(in millimeters)
2.3
REF.
Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008
b 1.95 2.20 0.077 0.087
c 0.15 0.41 0.006 0.016
E 5.10 5. 60 0.201 0.220
E1 4.05 4.60 0.159 0.181
D 3.30 3.95 0.130 0.156
b
L 0.75 1.60 0.030 0.063
1.52 2.75
1.52
Ordering type Marking Package Weight Base qty Delivery mode
STPS2L25U G23 SMB 0.107g 2500 Tape & reel
Band indicates cathode
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or oth erwise under any patent or patent rights of STMi croelectronics . Specifications mentioned i n this publication are subjec t to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectr oni cs products are n ot au thorized for use as critical components in life support devi ces or systems wi t hout express written approval of STMicroelectronics.
The ST logo is a registered trademark o f STMicroelectron ics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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