Datasheet STPS2H100U, STPS2H100A Datasheet (SGS Thomson Microelectronics)

®

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

MAIN PRODUCT CHARACTERISTI CS

STPS2H100A/U

I

F(AV)

V

RRM

2 A

100 V

Tj (max) 175 °C

(max) 0.65 V

V

F

FEATURES AND BENEFITS

NEGLIGIBLE SWITCHING LOSSES
HIGH JUNCTION TEMPERATURE CAPABILITY
LOW LEAKAGE CURRE NT
GOOD TRADE OFF BETWEEN LEAKAGE

CURRENT AND FORWARD VOLTAGE DROP
AVALANCHE R ATE D

DESCRIPTION

Schottky rectifier designed for high frequency
miniature Switched Mode Power Supplies suc h as
adaptators and on board DC/DC converters.

Packaged in SMA or SMB.

ABSOLUTE RATINGS

(limiting values)

SMA

(JEDEC DO-214AC)

STPS2H100A

SMB

(JEDEC DO-214AA )

STPS2H100U

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RRM

I

RSM

T

stg

Repetitive peak reverse voltage 100 V
RMS forward current 10 A
Average forward current TL = 130°C δ = 0.5 2 A
Surge non repetitive forward current tp = 10 ms sinusoidal 75 A
Repetitive peak reverse current tp=2 µs F=1kHz square 1 A
Non repetitive peak reverse current tp = 100 µs square 1 A
Storage temperature range - 65 to + 175

Tj Maximum operating junction temperature 175 °C

dV/dt Critical rate of rise of reverse voltage 10000 V/µs

November 1998 - Ed: 3A

°

C

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STPS2H100A/U

THERMAL RE SISTA NC ES

Symbol Parameter Value Unit

R

th (j -l)

Junction to lead SMA 30

°

SMB 25

STATIC ELECTRICAL CHARACTE RISTICS

Symbol Parameter Tests conditions Min. Typ. Max. Unit

* Reverse leakage current Tj = 25°CV

I

R

= V

R

RRM

1

Tj = 125°C 0.4 1 mA

** Forward voltage drop Tj = 25°CI

V

F

Tj = 125°C I
Tj = 25°CI
Tj = 125°C I

Pulse test : * tp = 5 ms, δ < 2%

** tp = 380 µs, δ < 2%

= 2 A 0.79 V

F

= 2 A 0.6 0.65

F

= 4 A 0.88

F

= 4 A 0.69 0.74

F

To evaluate the maximum conduction losses use the following equation :
P = 0.56 I

F(AV)

+ 0.045 I

F2(RMS )

C/W

µ

A

Fig. 1:

Average forward power dissipation versus

average forward current.

PF(av)(W)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

δ = 0.05

δ = 0.1

IF(av) (A)

δ = 0.2

δ = 0.5

δ

δ = 1

T

=tp/T

Fig. 2:

Average forward current versus ambient

temperature (δ=0.5).

IF(av)(A)

2.2

2.0

1.8

1.6

1.4

SMA
Rth(j-a)=100°C/W
S(Cu)=1.5cm²

1.2

1.0

0.8

0.6

T

0.4

tp

0.2

=tp/T

δ

0.0
0 25 50 75 100 125 150 175

tp

Rth(j-a)=Rth(j-l)

SMB
Rth(j-a)=80°C/W
S(Cu)=1.5cm²

Tamb(°C)

2/6

STPS2H100A/U

Fig. 3:

Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMB).

IM(A)

10

9
8
7
6
5
4
3

I

M

2
1
0

1E-3 1E-2 1E-1 1E+0

Fig. 5:

t

δ

=0.5

t(s)

Relative variation of thermal impedance

Ta=50°C

Ta=100°C

Ta=150°C

junction to ambient versus pulse duration (SMB).

Zth(j-a)/Rth(j-a)

1.0

Printed circuit board: S(Cu)=1.5cm² (e=35µm)

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

0.2

δ = 0.1

0.1

0.0

1E-2 1E-1 1E+0 1E+1 1E+2 1E+3

Single pulse

tp(s)

δ

=tp/T

T

tp

Fig. 4:

Non repetitive surge peak forward current
versus overload duration (maximum values)
(SMA).

IM(A)

8
7
6
5
4

Ta=50°C

Ta=100°C

3
2

I

M

1
0

1E-3 1E-2 1E-1 1E+0

Fig. 6:

t

δ

=0.5

t(s)

Relative variation of thermal impedance

Ta=150°C

junction to ambient versus pulse duration (SMA).

Zth(j-a)/Rth(j-a)

1.0

Printed circuit board: S(Cu)=1.5cm² (e=35µm)

0.9

0.8

0.7

0.6

δ = 0.5

0.5

0.4

δ = 0.2

0.3

0.2

δ = 0.1

0.1

0.0
1E-2 1E-1 1E+0 1E+1 1E+2

Single pulse

tp(s)

δ

=tp/T

T

tp

Fig. 7:

Reverse leakage current versus reverse

voltage applied (typical values).

IR(µA)

1E+0

1E-1

1E-2

1E-3

1E-4

1E-5

0 102030405060708090100

Tj=125°C

Tj=100°C

Tj=75°C

Tj=25°C

VR(V)

Fig. 8:

Junction capacitance versus reverse

voltage applied (typical values).

C(pF)

200

F=1MHz

100

50

20

10

1 2 5 10 20 50 100

VR(V)

Tj=25°C

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STPS2H100A/U

Fig. 9:

Thermal resistance junction to ambient
versus copper surface under eac h lead
(Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMB).

Rth(j-a) (°C/W)

120
100

80
60
40
20

S(Cu) (cm²)

0

012345

Fig. 11:

Forward voltage drop versus forward

current .

IFM(A)

1E+1

1E+0

Tj=125°C

Typ i cal
values

Tj=125°C

Maximum

values

Tj=25°C

Maximum

values

Fig. 10:

Thermal resistance junction to ambient
versus copper surface under each lead
(Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMA).

Rth(j-a) (°C/W)

140
120
100

80
60
40
20

0

012345

S(Cu) (cm²)

1E-1

1E-2

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

VFM(V)

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PACKAGE MECHANICAL DAT A

SMA

STPS2H100A/U

C

FOOT PRINT

E1

E

L

(in millimeters)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.70 0.075 0.106
A2 0.05 0.20 0.002 0.008

b 1.25 1.65 0.049 0.065
c 0.15 0.41 0.006 0.016

A1

A2

b

E 4.80 5.60 0.189 0.220

E1 3.95 4.60 0.156 0.181

D 2.25 2.95 0.089 0.116

L 0.75 1.60 0.030 0.063

1.65

1.45 1.45

2.40

5/6

STPS2H100A/U

PACKAGE MECHANICAL DAT A

SMB

C

FOOT PRINT

E1

E

L

(in millimeters)

DIMENSIONS

REF.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.45 0.075 0.096
A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

c 0.15 0.41 0.006 0.016

E 5.10 5.60 0.201 0.220

A1

A2

b

E1 4.05 4.60 0.159 0.181

D 3.30 3.95 0.130 0.156

L 0.75 1.60 0.030 0.063

2.3

1.52 2.75

1.52

Ordering type Marking Package Weight Base qty Delivery mode

STPS2H100A S21 SMA 0.068g 5000 Tape & reel

STPS2H100U G21 SMB 0.107g 2500 Tape & reel

Band indicates cathode
Epoxy meets UL94,V0

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