
®
STPS20L60CT
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTI CS
I
F(AV)
V
RRM
2 x 10 A
60 V
Tj (max) 150 °C
(max) 0.56 V
V
F
FEATURES AND BENEFITS
LOW FORWARD VOLTA GE DROP
NEGLIGIBLE SW ITCHING LOS S ES
LOW THERMAL RESISTANCE
DESCRIPTION
Dual center tap Schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DC to DC converters.
Packaged in TO-220AB, this device is intended for
use in high frequency inverters.
A1
A2
TO-220AB
A1
K
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
T
stg
Tj
dV/dt
dPtot
* :
dTj
July 1999 - Ed: 1A
Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 140°C
Surge non repetitive forward current tp = 10 ms Sinusoidal
Repetitive peak reverse current tp = 2 µs square F = 1kHz
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
Rth(j−a
Per diode
δ = 0.5
1
thermal runaway condition for a diode on its own heatsink
)
Per device
60 V
30 A
10
20
220 A
1A
- 65 to + 175 °C
150 °C
10000 V/µs
A
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STPS20L60CT
THERMA L RE SISTA NC E
Symbol Parameter Value Unit
R
R
th (j-c)
th (c)
Junction to case
Per diode
Total
Coupling 0.1 °C/W
1.6
0.85
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
°C/W
*
I
R
Reverse leakage current Tj = 25°CV
= V
R
Tj = 125°C
V
*
F
Forward voltage drop Tj = 25°CI
Tj = 125°CI
Tj = 25°CI
Tj = 125°CI
= 10 A
F
= 10 A
F
= 20 A
F
= 20 A
F
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.42x I
Fig. 1: Average forward power dis sipation versus
average forward current (per diode).
PF(av)(W)
8
7
6
5
4
3
2
1
0
0123456789101112
F(AV)
δ = 0.05
+ 0.014 I
δ = 0.1
F2(RMS)
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
Fig. 2: Average current versus ambient
temperature (δ=0.5) (per diode).
IF(av)(A)
δ = 1
T
tp
12
10
8
6
4
2
0
0 25 50 75 100 125 150
δ
=tp/T
RRM
T
tp
350 µA
65 95 mA
0.6 V
0.48 0.56
0.74
0.62 0.7
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Tamb(°C)
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STPS20L60CT
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
200
180
160
140
120
100
Tc=25°C
80
60
I
M
40
20
0
1E-3 1E-2 1E-1 1E+0
t
δ
=0.5
t(s)
Tc=75°C
Tc=100°C
Fig. 5: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
IR(mA)
5E+2
1E+2
1E+1
1E+0
1E-1
1E-2
1E-3
0 5 10 15 20 25 30 35 40 45 50 55 60
Tc=150°C
Tc=125°C
Tc=100°C
Tc=75°C
Tc=50°C
Tc=25°C
VR(V)
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-4 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values,per diode).
C(nF)
2.0
1.0
0.5
0.2
VR(V)
0.1
1 10 100
F=1MHz
Tj=25°C
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
100.0
Tj=150°C
(typical values)
10.0
Tj=125°C
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Tj=25°C
VFM(V)
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STPS20L60CT
PACKAGE MECHANICAL DAT A
TO-220AB
H2
Dia
L5
L6
L2
F2
F1
F
G1
G
L9
L4
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181
Millimeters Inches
Min. Max. Min. Max.
C 1.23 1.32 0.048 0.051
L7
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0. 024 0.034
F1 1.14 1.70 0. 044 0.066
F2 1.14 1.70 0. 044 0.066
G 4.95 5.15 0.194 0.202
D
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
M
E
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Cooling method: C
Recommended torque value: 0.55 m.N
Maximum torque value: 0.70 m.N
Ordering type Marking Package Weight Base qty Delivery mode
STPS20L60CT STPS20L60CT TO-220AB 2.2g 50 Tube
STPS20L60CT STPS20L60CT TO-220AB 2.2g 1000 Bulk
Epoxy meets UL94,V0
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