Dual center tap Schottky rectifiers suited for
SwitchedModePowerSuppliesandhigh
frequency DC to DC converters.
2
Packaged in TO-220AB, I
PAK and D2PAK, this
device is intended foruse in high frequency
inverters.
A1
A2
A1
TO-220AB
STPS20L60CT
K
K
A2
K
STPS20L60CG
A1
I2PAK
STPS20L60CR
A2
A1
D2PAK
A2
K
ABSOLUTE RATINGS (limiting values, per diode)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
P
ARM
T
stg
Tj
dV/dt
dPtot
*:
Repetitive peak reverse voltage
RMS forward current
Average forward currentTc = 140°C
Surge non repetitive forward currenttp = 10 ms Sinusoidal
Repetitive peak reverse currenttp=2µssquare F = 1kHz
Repetitive peak avalanche powertp = 1µsTj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
<
dTjRth ja
July 2003 - Ed: 3C
Per diode
δ = 0.5
Per device
thermal runaway condition for a diode on its own heatsink
−1()
60V
30A
10
20
220A
1A
5800W
-65 to+175°C
150°C
10000V/µs
A
1/6
Page 2
STPS20L60CT/CG/CR
THERMAL RESISTANCE
SymbolParameterValueUnit
R
th (j-c)
R
th (c)
Junction to caseTO-220AB / I2PAK/D2PAK
TO-220AB / I2PAK/D2PAK
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
SymbolParameterTests conditionsMin.Typ.Max.Unit
Per diode
Total
1.6
0.85
Coupling0.1°C/W
th(c)
°C/W
*
I
R
Reverse leakage currentTj = 25°CV
R=VRRM
Tj = 125°C
V
*
F
Forward voltage dropTj = 25°CI
Tj = 125°CI
Tj=25°CI
Tj = 125°CI
=10A
F
=10A
F
=20A
F
=20A
F
Pulse test : * tp = 380 µs, δ <2%
To evaluate the conduction losses use the following equation :
P = 0.42x I
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
8
7
6
5
4
3
2
1
0
0123456789101112
F(AV)
δ = 0.05
+ 0.014 I
δ = 0.1
F2(RMS)
δ = 0.2
IF(av) (A)
δ = 0.5
δ
=tp/T
Fig.2:Averagecurrentversusambient
temperature (δ=0.5) (per diode).
IF(av)(A)
δ = 1
T
tp
12
10
8
6
4
2
δ
0
0255075100125150
=tp/T
350µA
6595mA
0.6V
0.480.56
0.74
0.620.7
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
T
tp
Tamb(°C)
2/6
Page 3
STPS20L60CT/CG/CR
Fig. 3: Normalized avalanche power derating
versus pulse duration.
P(t)
ARM p
P(1µs)
ARM
1
0.1
0.01
t (µs)
0.001
0.10.011
p
101001000
Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
200
180
160
140
120
100
80
60
IM
40
20
0
1E-31E-21E-11E+0
δ=0.5
t
t(s)
Tc=25°C
Tc=75°C
Tc=100°C
Fig. 4: Normalized avalanche power derating
versus junction temperature.
P(t)
ARM p
P(25°C)
ARM
1.2
1
0.8
0.6
0.4
0.2
0
0255075100125150
T (°C)
j
Fig. 6: Relative variation of thermal transient
impedancejunction to case versus pulseduration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0
1E-41E-31E-21E-11E+0
tp(s)
δ
=tp/T
T
tp
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Informationfurnishedisbelievedtobeaccurateandreliable.However,STMicroelectronicsassumes no responsibility for the consequences of
useofsuch information nor for any infringement of patents or other rights of third parties which may result from itsuse.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics