Datasheet STPS20L25CG, STPS20L25CT Datasheet (SGS Thomson Microelectronics)

Page 1
®
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTIC S
STPS20L25CT/CG
I
F(AV)
V
2 x 10 A
25 V
Tj (max) 150 °C
(max) 0.35 V
V
F
FEATURES AND BENEFITS
VERY LOW F O RW ARD VOLTAG E DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK
OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH MEANS THE HIGHEST EFFICIENCY IN THE APPLICATIONS
DESCR IPTION
Dual center tap Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters.
Packaged in TO-220AB and D
2
PAK, this device is especially intended for use as a rectifier at the secondary of 3.3V SMP S units.
A1
A2
A1
TO-220AB
STPS20L25CT
K
K
A2
K
A2
A1
D2PAK
STPS20L25CG
ABSOLUTE RATINGS
(limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
I
RRM
I
RSM
T
stg
Repetitive peak reverse voltage 25 V RMS forward current 30 A Average forward current Tc = 145°C
δ
= 0.5
Per diode Per device
10
20 Surge non repetitive forward current tp = 10 ms S inusoidal 220 A Repetitive peak reverse current tp=2 µs square F=1kHz 1 A Non repetitive peak reverse current tp = 100 µs square 3 A Storage temperature range - 65 to + 150
Tj Maximum operating junction temperature * 150 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
dPtot
* :
June 1999 - Ed : 3A
dTj
<
1
Rth(j−a
thermal runaway condition for a diode on its own heatsink
)
A
°
C
1/5
Page 2
STPS20L25CT/CG
THERMAL RE SISTA NC ES
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode 1.5
Total 0.8
R
th (c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x R
(Per diode) + P(diode 2) x R
th(j-c)
th(c)
STATIC ELECTRICAL CHARACTE RISTICS (per diode)
Symbol Tests conditions Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage current Tj = 25°CV
R
= V
R
RRM
800
Tj = 125°C 125 250 m A
V
* Forward voltage drop Tj = 25°CI
F
Tj = 125°CI Tj = 25°CI Tj = 125°CI
= 10 A 0.46 V
F
= 10 A 0.30 0.35
F
= 20 A 0.56
F
= 20 A 0.41 0.48
F
°
C/W
µ
A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation : P = 0.22 x I
Fig.1 :
Average forward power dissipation versus
average forward current.
PF(av)(W)
5
4
3
2
1
0
01234567891011
F(AV)
δ = 0.05
+ 0.013 I
δ = 0.1
IF(av) (A)
F2(RMS )
δ = 0.2
δ = 0.5
δ
=tp/T
T
δ = 1
Fig.2 :
Average forward current versus ambient
temperature ( δ = 0.5).
IF(av)(A)
12 10
8 6 4 2
tp
0
0 25 50 75 100 125 150
δ
=tp/T
T
tp
Rth(j-a)=Rth(j-c)
Rth(j-a)=50°C/W
Tamb(°C)
2/5
Page 3
STPS20L25CT/CG
Fig.3 :
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
200 180 160 140 120 100
80 60
I
M
40 20
0
1E-3 1E-2 1E-1 1E+0
Fig.5 :
t
δ
=0.5
t(s)
Reverse leakage current versus reverse
Tc=25°C
Tc=75°C
Tc=100°C
voltage applied (typical values).
IR(mA)
5E+2 1E+2
1E+1
1E+0
Tj=150°C
Tj=125°C
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
0.0
1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0
Fig.6 :
Single pulse
Junction capacitance versus reverse
tp(s)
δ
=tp/T
T
tp
voltage applied (typical values).
C(nF)
5.0
1.0
F=1MHz Tj=25°C
1E-1
1E-2
0 5 10 15 20 25
Fig.7 :
Forward voltage drop versus forward
Tj=25°C
VR(V)
current (maximum values).
IFM(A)
100.0
Typical values
10.0
1.0
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Tj=150°C
Tj=25°C
Tj=125°C
VFM(V)
0.1 12 51020 50
Fig.8 :
Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness : 35 µm). (STPS20L25G only)
Rth(j-a) (°C/W)
80 70 60 50 40 30 20
VR(V)
10
0
0 4 8 12 16 20 24 28 32 36 40
S(Cu) (cm²)
3/5
Page 4
STPS20L25CT/CG
PACKAGE MECHANICAL DAT A
2
PAK
D
E
L2
L
L3
A1
B2
B
G
* FLAT ZONE NO LESSTHAN 2mm
C2
DIMENSIONS
REF.
A
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009
D
B 0.70 0.93 0.027 0.037 B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024 C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
A2
L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
M
*
V2
M 2.40 3.20 0.094 0. 126 R 0.40 typ. 0.016 typ.
V2
FOOTPRINT DIMENSIONS
16.90
10.30
8.90
4/5
(in millimeters)
1.30
3.70
Cooling method: by conduction ( method C)
5.08
Page 5
PACKAGE ME CHANICAL D AT A
TO-220AB
H2
Dia
L5
L6
L2
F2 F1
F
G1
G
L9
L4
STPS20L25CT/CG
DIMENSIONS
REF.
A
C
A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107
L7
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066
D
G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
M
E
L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
Millimeters Inches
Min. Max. Min. Max.
Cooling method : C Recommended torque value : 0.55 m.N Maximum torque value : 0.70 m.N
Ordering type Marking Package Weight Base qty
Delivery
mode
STPS20L25CT STPS20L25CT TO-220AB 2.23g 50 Tube
2
STPS20L25CG STPS20L25CG D
STPS20L25CG-TR STPS20L25CG D
PAK 1.48g 50 Tube
2
PAK 1.48g 1000 Tape & reel
Epoxy meets UL94,V0
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© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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