Datasheet STGW30NB60H Datasheet (SGS Thomson Microelectronics)



STGW30NB60H

N-CHANNEL 30A - 600V TO-247

PowerMESH IGBT

TYPE V

CES

V

CE(sat)

I

C

ST G W30NB60H 600 V < 2 . 8 V 30 A

■ HIGHINPUT IMPEDANCE

(VOLTAGEDRIVEN)

■ LOW ON-VOLTAGEDROP (V

■ LOW GATECHARGE

■ HIGHCURRENTCAPABILITY

■ VERYHIGH FREQUENCYOPERATION

■ OFFLOSSES INCLUDETAIL CURRENT

CESAT

)

DESCRIPTION

Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH IGBTs, with outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).

APPLICATIONS

■ HIGHFREQUENCY MOTOR CONTROLS

■ WELDINGEQUIPMENTS

■ SMPSAND PFC IN BOTH HARDSWITCH

AND RESONANTTOPOLOGIES

3

2

1

TO-247

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V
V

V

I

CM

P

T

(•) Pulse width limited by safe operating area

June 1999

Collect o r -Em i t t er Voltage (VGS= 0) 600 V

CES

Emit t er-Collect or Voltage 20 V

ECR

Gate-Emitter V oltage

GE

I

Collect o r Curr ent (continuous) at Tc=25oC60A

C

I

Collect o r Curr ent (continuous) at Tc= 100oC30A

C

20 V

±

(•) Collect o r Curr ent (pulsed) 240 A

Tot al Dissipat ion at Tc=25oC 190 W

tot

Derat ing Factor 1.52 W/
Sto rage Tem perature - 65 to 150

stg

T

Max. Operat ing Junc tion Tem per ature 150

j

o

C

o

C

o

C

1/8

STGW30NB60H

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-h

Ther mal Resistanc e Junction-case Max
Ther mal Resistanc e Junction-ambient Max
Ther mal Resistanc e C as e - heatsink Typ

0.66
30

0.1

o

C/W

oC/W

o

C/W

ELECTRICAL CHARACTERISTICS

=25oC unless otherwise specified)

(T

j

OFF

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

V

BR(CES)

Collector-Emitter

IC=250µAVGE= 0 600 V

Break dow n Volt age

I

I

ON (∗

CES

GES

Collect o r cut - off

=0)

(V

GE

Gat e- Em i t t er Leakage
Current (V

)

CE

=0)

V

=MaxRating Tj=25oC

CE

=MaxRating Tj=125oC

V

CE

V

= ± 20 V VCE=0 ±100 nA

GE

10

100

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

V

GE(th)

Gate Th reshold

VCE=VGEIC= 250 µ A35V

Voltage

V

CE(SAT)

Collector-Emitter
Sat urat ion Volt age

VGE=15V IC=30A
V

=15V IC=30A Tj= 125oC

GE

2.2

1.8

2.8 V

DYNAMIC

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

C

C

C

Q
Q

g

Q

I

CL

Forward

fs

Tr ansc on duc tance
Input Capacitanc e

ies

Out put Capacitance

oes

Reverse Transfer

res

Capacit a nc e
Tot al Gate Charge

G

Gate-Emitt er C harge

GE

Gat e- Col lect or C har ge

GC

Latc hing Curr ent V

VCE=25 V IC=30A 20 S

VCE=25V f=1MHz VGE= 0 2300

250

60

VCE= 480 V IC=30A VGE= 15 V 150

15
72

=480V RG=10 Ω

clamp

T

= 150oC

j

120 A

µA
µ

V

pF
pF
pF

nC
nC
nC

A

SWITCHINGON

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

(di/dt)

2/8

t

d(on)

E

Delay Time

t

Rise Time

r

Tur n-on Current Slope

on

Turn-on

on

Switching Losses

VCC= 480 V IC=30A

=15V RG=10Ω

V

GE

VCC=480V IC=30A

=10Ω VGE=15V

R

G

T

=125oC

j

15
75

760
850

ns
ns

A/µs

J

µ

STGW30NB60H

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHINGOFF

Sym bol Param e t er Test Conditions Min . Typ. Max. Unit

t

tr(v

t

d(off

E

off

E

t

tr(v

t

d(off

E

off

E

(•) Pulse width limited by max. junction temperature
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
(**)Losses Include Also The Tail (Jedec Standardization)

Cross-Over Time

c

Off Voltage Rise Time

)

off

)

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss
Tot al Switching Loss

ts

Cross-Over Time

c

)

Off Voltage Rise Time

off

)

Delay Time

t

Fall T ime

f

(**)

Turn-off Switching Loss
Tot al Switching Loss

ts

VCC=480V IC=30A
R

GE

=10

Ω

VGE=15V

VCC = 480 V IC=30A
R

GE

= 125oC

T

j

=10

Ω

VGE=15V

150

40

210

90

1.10

1.8

250

70
250
160

1.6

2.45

ns
ns
ns

ns
mJ
mJ

ns

ns

ns

ns
mJ
mJ

ThermalImpedance

3/8

STGW30NB60H

OutputCharacteristics

Transconductance

TransferCharacteristics

Collector-EmitterOnVoltagevs Temperature

Collector-EmitterOnVoltagevs Collector Current

4/8

Gate Thresholdvs Temperature

STGW30NB60H

NormalizedBreakdown Voltage vs Temperature

Gate Chargevs Gate-EmitterVoltage

CapacitanceVariations

TotalSwitchingLossesvs Gate Resistance

TotalSwitchingLossesvs Temperature

TotalSwitchingLossesvs Collector Current

5/8

STGW30NB60H

SwitchingOff SafeOperatingArea

Fig. 1: GateCharge test Circuit Fig. 2: Test Circuit For Inductive Load Switching

Fig. 3 SwitchingWaveforms

6/8

TO-247 MECHANICAL DATA

STGW30NB60H

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.209
D 2.2 2.6 0.087 0.102
E 0.4 0.8 0.016 0.031

F 1 1.4 0.039 0.055
F3 2 2.4 0.079 0.094
F4 3 3.4 0.118 0.134

G 10.9 0.429
H 15.3 15.9 0.602 0.626

L 19.7 20.3 0.776 0.779
L3 14.2 14.8 0.559 0.582
L4 34.6 1.362
L5 5.5 0.217

M 2 3 0.079 0.118

mm inch

P025P

7/8

STGW30NB60H

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of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication orotherwise under any patent or patentrights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublicationsupersedes andreplacesall information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devicesor systems without expresswritten approval of STMicroelectronics.

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