Page 1
STGW20NB60K
N-CHANNEL 20A - 600V -TO-247
SHORT CIRCUIT PROOF PowerMESH™ IGBT
TYPE V
CES
V
CE(sat)
I
C
STGW20NB60K 600 V <2.8 V20A
■ HIGH INPUTIMPEDANCE(VOLTAGE DRIVEN)
■ LOW ON-VOLTAGE DROP (V
■ LOW ON-LOSSES
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
■ OFF LOSSES INCLUDE TAIL CURRENT
■ VERY HIGH FREQUENCY OPERATION
■ SHORT CIRCUIT RATED
■ LATCH CURRENT FREE OPERA TION
cesat
)
DESCRIPTION
Using the latest h igh voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs, with outstanding
performances. The suffix “K” identifies a fam ily
optimized for high frequency motor cont rol
applications with short circuit withstand capability.
APPLICATIONS
■ HIGH FREQUENCY MOTOR CONTROLS
■ U.P.S.
■ WELDING EQUIPMENTS
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
Tsc Short Circuit Withstand 10
P
TOT
T
stg
T
j
Collector-Emitter Voltage (VGS=0)
600 V
Emitter-Collector Voltage 20 V
Gate-Emitter Voltage ±20 V
Collector Current (continuos) at TC= 25°C
Collector Current (continuos) at TC= 100°C
()
Collector Current (pulsed) 80 A
Total Dissipation at TC= 25°C
40 A
20 A
150 W
Derating Factor 1 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
µs
1/8May 2003
Page 2
STGW20NB60K
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 0.83 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-h Thermal Resistance Case-heatsink Typ 0.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE S PECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
BR(CES)
I
CES
I
GES
Collectro-Emitter Breakdown
Voltage
Collector cut-off
=0)
(V
GE
Gate-Emitter Leakage
Current (V
CE
=0)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GE(th)
V
CE(sat)
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
= 250 µA, VGE=0
I
C
= Max Rating, TC=25°C
V
CE
= Max Rating, TC= 125 °C
V
CE
V
=±20V,VCE=0
GE
V
CE=VGE,IC
=15V,IC=20A
V
GE
= 15V, IC= 20 A, Tj =125°C
V
GE
= 250µA
600 V
10 µA
100 µA
±100 nA
57V
2.3 2.8 V
1.9 V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Forward Transconductance
Input Capacitance
Output Capacitance 200 pF
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge T.B.D. nC
Gate-Collector Charge T.B.D. nC
tscw Short Circuit Withstand Time
=25V,IC=20 A
CE
=25V,f=1MHz,VGE=0
V
CE
V
= 480V, IC=20A,
CE
VGE=15V
V
= 0.5 BVces , VGE=15V,
ce
Tj = 125°C , R
=10Ω
G
8S
1300 pF
30 pF
90 nC
10 µs
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
(di/dt)
Eon Turn-on Switching Losses 300 µJ
Turn-on Delay Time
Rise Time 70 ns
Turn-on Current Slope
on
V
=480V,IC=20A
CC
=10Ω,VGE=15V
R
G
V
= 480 V,IC=20ARG=10Ω
CC
V
= 15 V,Tj = 125°C
GE
20 ns
350 A/µs
2/8
Page 3
STGW20NB60K
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
c
tr(V
off
t
d(off
t
f
E
(**)
off
E
ts
t
c
tr(V
off
td(
off
t
f
E
(**)
off
E
ts
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
Cross-over Time
)
Off Voltage Rise Time 35 ns
)
Delay Time 130 ns
Fall Time 80 ns
Turn-off Switching Loss 0.45 mJ
Total Switching Loss 0.6 mJ
Cross-over Time
)
Off Voltage Rise Time 55 ns
)
Delay Time 160 ns
Fall Time 150 ns
Turn-off Switching Loss 0.75 mJ
Total Switching Loss 1.05 mJ
= 480 V, IC=20A,
cc
=10Ω,VGE=15V
R
GE
V
= 480 V, IC=20A,
cc
=10Ω,VGE=15V
R
GE
Tj = 125 °C
120 ns
190 ns
3/8
Page 4
STGW20NB60K
Switching Off Safe Operating AreaThermal Impedance
Output Characteristics
Normalized Gate Threshold Voltage vs Temp. Transconductance
Transfer Characteristics
4/8
Page 5
STGW20NB60K
Collector-Emitter On Voltage vs Temperature
Capacitance Variations Normalized Break-dow n Voltage vs Temp.
Gate-Charge vs Gate-Emitter Voltage
Collector-Emitter on Voltage vs Collector
Current
Turn-Off Energy Losses vs Temperature
5/8
Page 6
STGW20NB60K
Fig. 2: Test Circuit Fo r Inductive Load SwitchingFig. 1: Gate Charge test Circuit
6/8
Page 7
TO-247 MECHANICAL DATA
STGW20NB60K
DIM.
A 4.85 5.15 0.19 0.20
D 2.20 2.60 0.08 0.10
E 0.40 0.80 0.015 0.03
F 1 1.40 0.04 0.05
F1 3 0.11
F2 2 0.07
F3 2 2.40 0.07 0.09
F4 3 3.40 0.11 0.13
G 10.90 0.43
H 15.45 15.75 0.60 0.62
L 19.85 20.15 0.78 0.79
L1 3.70 4.30 0.14 0.17
L2 18.50 0.72
L3 14.20 14.80 0.56 0.58
L4 34.60 1.36
L5 5.50 0.21
M 2 3 0.07 0.11
V
V2
Dia 3.55 3.65 0.14 0.143
MIN. TYP MAX. MIN. TYP. MAX.
mm. inch
5º 5º
60º 60º
7/8
Page 8
STGW20NB60K
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of u se of such inf ormat ion nor for any in fring ement of p aten ts or othe r ri ghts of th ird p arties whic h may resul t f rom
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
© The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - Printed in Italy - All Rights Reserved
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
STMicroelectronics GROUP OF COMPANIES
© http://www.st.com
8/8
Loading...