Datasheet STD17NE03L Datasheet (SGS Thomson Microelectronics)



STD17NE03L

N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAK

STripFET POWER MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST D1 7NE03L 30 V < 0.05 Ω 17 A

■ TYPICALR

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ APPLICATIONORIENTED

DS(on)

= 0.034 Ω

CHARACTERIZATION

■ ADDSUFFIX ”T4” FORORDERING INTAPE

& REEL

DESCRIPTION

This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting tran­sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac­teristicsand less critical alignmentsteps therefore
a remarkablemanufacturingreproducibility.

APPLICATIONS

■ SOLENOIDAND RELAYDRIVERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ DC-DCCONVERTERS

■ AUTOMOTIVE ENVIRONMENT

3

1

2

1

IPAK

TO-251

(Suffix”-1”)

DPAK

TO-252

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

DM

P

dv/ dt Peak Diode Recovery voltage slope 6 V/ns

T

(•) Pulse width limited by safeoperating area (1)I

June 1999

Drain-source Voltage (VGS=0) 30 V

DS

Dra in- gate Voltage (RGS=20kΩ)

DGR

Gate -sourc e Vo ltage

GS

I

Drain Current (co ntinuous) at Tc=25oC17A

D

I

Drain Current (co ntinuous) at Tc=100oC12A

D

30 V

20 V

±

(•) Drain C urrent (pulsed) 68 A

Total Dissipation at Tc=25oC35W

tot

Derating Factor 0.23 W/

St orage Temperature -65 to 175

stg

T

Max. Op erating Junc tion Te mperature 175

j

≤

17 A, di/dt≤300 A/µs, V

SD

DD

≤

V

(BR)DSS,Tj

≤

T

JMAX

o

C

o

C

o

C

1/9

STD17NE03L

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Para meter Max V al ue Uni t

I

AR

E

Ther mal Resist ance Junction-c ase Max
Ther mal Resist ance Junction-am b ient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature Fo r S old er ing Pur p ose

l

Avalanche Current, Re petitive or No t -Repetit ive
(pulse width limited by T

Single Pulse Avalanche En ergy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max)

j

4.28
100

1.5

275

17 A

50 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwisespecified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

=250µAVGS=0

I

D

30 V

Break d own V o lt age

I

DSS

I

GSS

Zero Gate Voltage
Drain Cu rr ent (V

GS

Gat e- b ody Le aka ge
Current ( V

DS

=0)

=0)

V

=MaxRating

DS

= Max Rating Tc=125

V

DS

o

C

= ± 20 V

V

GS

1

10

± 100 nA

ON(∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

DS=VGSID

= 250 µ A

11.72.5V

Voltage

R

DS(on)

I

D(on)

Static Drain-source On
Resistance

VGS=10V ID=8.5A

=10V ID=8.5A

V

GS

On State Dra in Current VDS>I

D(on)xRDS(on )max

0.034

0.049

17 A

0.05

0.06

VGS=10V

DYNAMIC

µA
µ

Ω

A

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗)Forward

fs

VDS>I

D(on)xRDS(on )maxID

=8.5 A 5 11 S

Tr ansconductance

C

C

C

Input Cap ac i t an c e

iss

Out put Capacitance

oss

Reverse Transfer

rss

VDS=25V f=1MHz VGS=0 680

160

60

Capacitance

2/9

pF
pF
pF

STD17NE03L

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

Turn-on delay Time

t

Rise Time

r

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=15V ID=10A

=4.7 Ω VGS=5V

R

G

VDD=24V ID=22A VGS=5V 13

15
70

18 nC
6
6

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

t

Off -voltage Rise T ime
Fall Time

f

Cross-over Ti m e

c

VDD=24V ID=20A

=4.7 Ω VGS=5V

R

G

13
33
55

SOURCEDRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration = 300µs, dutycycle 1.5%
(•) Pulse width limited by safeoperating area

Source-drain Curr ent

(•)

Source-drain Curr ent

17

68

(pulsed)

(∗) F orward On Voltage ISD=17A VGS=0 1.5 V

Reverse R ec o v ery

rr

Time
Reverse R ec o v ery

rr

= 22 A di/dt = 100 A/µs

I

SD

=15V Tj= 150oC

V

DD

40

0.45
Charge
Reverse R ec o v ery

2.2

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

nC

A

SafeOperating Area Thermal Impedance

3/9

STD17NE03L

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/9

CapacitanceVariations

STD17NE03L

Normalized GateThreshold Voltagevs
Temperature

Source-drainDiode Forward Characteristics

Normalized On Resistance vs Temperature

5/9

STD17NE03L

Fig. 1:

UnclampedInductive LoadTest Circuit

Fig. 3: SwitchingTimes Test CircuitsFor
ResistiveLoad

Fig. 2:

UnclampedInductiveWaveform

Fig. 4: Gate Charge test Circuit

Fig. 5:

Test Circuit For InductiveLoad Switching

And Diode Recovery Times

6/9

TO-252 (DPAK) MECHANICALDATA

STD17NE03L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397

L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

C2

L2

B2

==

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

7/9

STD17NE03L

TO-251(IPAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

H

8/9

A

E

==

C2

L2

B2

==

D

B3

2

13

L1

B6

A1

C

A3

L

B

B5

G

==

0068771-E

STD17NE03L

Information furnished is believed tobeaccurateand reliable. However, STMicroelectronics assumesno responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may resultfrom its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publicationare
subjecttochange without notice.Thispublication supersedesand replacesall information previouslysupplied.STMicroelectronics products
are not authorizedfor useas critical components in lifesupport devices or systems without express written approval of STMicroelectronics.

The STlogo is a trademark of STMicroelectronics

 1999 STMicroelectronics – Printed in Italy – All Rights Reserved

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China -France - Germany - Italy- Japan- Korea- Malaysia - Malta - Mexico - Morocco - The Netherlands -

Singapore - Spain - Sweden - Switzerland - Taiwan- Thailand - UnitedKingdom - U.S.A.

http://www.st.com

.

9/9