Datasheet STD17N06L, STD17N05L Datasheet (SGS Thomson Microelectronics)

STD17N05L
STD17N06L

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STD 17N05L 50 V < 0. 085 Ω 17 A
STD 17N06L 60 V < 0. 085 Ω 17 A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ LOGIC LEVEL COMPATIBLE INPUT

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.065 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

IPAK

TO-251

(Suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

1

DPAK

TO-252

(Suffix ”T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STD 17N05L STD17N06L

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

January 1995

Drain - s ource Voltage (VGS=0) 50 60 V

DS

Drain- gate Voltage (RGS=20kΩ)5060V

DGR

Gate-source Voltage ± 15 V

GS

Drain Current (continuous) at Tc=25oC17A

I

D

Drain Current (continuous) at Tc=100oC12A

I

D

(•) Drain Current (pulsed) 68 A

Total D i ssipation at Tc=25oC55W

tot

Derating F actor 0.37 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o
o

o

C
C
C

1/10

STD17N05L/STD17N06L

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

2.73
100

1.5

275

17 A

60 mJ

15 mJ

12 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain - s ource
Break d own Volta ge

Zer o Gate Voltage
Drain Current (VGS=0)

Gat e- body Leakage

ID=250µAVGS=0

for STD17 N05L
for STD17 N06L

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

50
60

250

1000µAµA

VGS= ± 15 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

I

D(on)

Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n

Resistance
On St ate Dra in Current VDS>I

VGS=5V ID=8.5A
V

=5V ID=8.5A Tc= 100oC

GS

D(on)xRDS(on)max

0.065 0.085

0.17

17 A

VGS=10V

DYNAMIC

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=8.5A 5 12 S

VDS=25V f=1MHz VGS=0 700

250

70

1000

350
100

V
V

Ω
Ω

pF
pF
pF

2/10

STD17N05L/STD17N06L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING RESISTIVE LOAD

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=17A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING INDUCTIVE LOAD

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=30V ID=8.5A
RGS=50 Ω VGS=5V

60

35090500

(see test circuit, figure 3)

130 A/µs
RGS=50 Ω VGS=5V
(see test circuit, figure 5)

VDD=40V ID=17A VGS=5V 18

6
9

VDD=40V ID=17A
RGS=50 Ω VGS=5V
(see test circuit, figure 5)

70
100
180

26 nC

100
150
260

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Co ndition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

17
68

(pulsed)

V

(∗) For w ar d On Volt age ISD=17A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 17 A di/dt = 100 A /µs
VDD=30V Tj=150oC
(see test circuit, figure 5)

65

0.13

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Area Thermal Impedance

A
A

ns

µC

A

3/10

STD17N05L/STD17N06L

Derating Curve

Transfer Characteristics

Output Characteristics

Transconductance

Static Drain-source On Resistance

4/10

Gate Charge vs Gate-source Voltage

STD17N05L/STD17N06L

Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Cross-over TimeTurn-off Drain-source Voltage Slope

5/10

STD17N05L/STD17N06L

Switching SafeOperating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

6/10

STD17N05L/STD17N06L

Fig. 3: Switching Times Test Circuits For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge Test Circuit

7/10

STD17N05L/STD17N06L

TO-251 (IPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

8/10

A

E

==

C2

L2

B2

==

H

C

A3

A1

B6

L

B

B5

G

==

D

B3

2

13

L1

0068771-E

TO-252 (DPAK)MECHANICAL DATA

STD17N05L/STD17N06L

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

H

A

E

==

C2

L2

B2

==

DETAIL”A”

D

2

13

L4

A1

C

A2

DETAIL”A”

B

G

==

0068772-B

9/10

STD17N05L/STD17N06L

Information furnished isbelieved to be accurateand reliable. However, SGS-THOMSONMicroelectronics assumes noresponsability for the
consequences of use of suchinformation nor for any infringementof patents orother rights of third parties whichmay results from its use. No
license isgrantedby implicationor otherwiseunder anypatentor patentrights ofSGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice.This publication supersedes and replacesall information previouslysupplied.
SGS-THOMSON Microelectronicsproducts arenotauthorizedfor useascriticalcomponents inlifesupportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.

 1994 SGS-THOMSONMicroelectronics - All Rights Reserved

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