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SSeemmiiccoonndduuccttoorr
STB1132
PNP Silicon Transistor
Description
• Medium power amplifier
Features
• PC(Collector dissipation)=2W(Ceramic substate of 40×40×0.8mm used)
• Low collector saturation voltage : V
=-0.2V(Typ.)
CE(sat)
• Complementary pair with STD1664
Ordering Information
Type NO. Marking Package Code
STB1132 A1
: h
rank, monthly code
FE
SOT-89
Outline Dimensions unit : mm
-0.3
4.0
+0.5
0.50±0.1
2.5
-0.3
+0.2
1.00±0.3
3
-0.1
+0.2
1.82±0.05
4.5
-0.1
+0.2
1.5
2
1
0.42±0.05
-0.02
0~0.1
+0.04
0.42
0.52±0.05
0.15 Typ.
PIN Connections
1. Base
2. Collector
3. Emitter
KST-8001-002
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STB1132
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage V
Collector-Emitter voltage V
Emitter-Base voltage V
Collector current IC -1 A
Collector dissipation
Junction temperature Tj 150
Storage temperature T
* : When mounted on 40×40×0.8mm ceramic substate
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
=-50µA, IE=0
Collector-Base breakdown voltage BV
Collector-Emitter breakdown voltage BV
Emitter-Base breakdown voltage BV
Collector cut-off current I
Collector cut-off current I
Emitter cut-off current I
DC current gain
Collector-Emitter saturation voltage V
Transition frequency fT
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 20 30 pF
CBO
CEO
EBO
CBO
CES
EBO
h
FE
CE(sat)
I
C
IC=-1mA, IB=0 -32 - - V
=-50µA, IC=0
I
E
VCB=-20V, IE=0 - - -0.1
VCE=-30V, IC=0 - - -0.1
VEB=-4V, IC=0 - - -0.1
*
V
CE
IC=-500mA, IB=-50mA - -0.2 -0.8 V
VCE=-5V, IC=-50mA,
f=30MHz
-40 V
CBO
-32 V
CEO
-5 V
EBO
PC 0.5
*
P
C
2
W
°C
-55~150
stg
-40 - - V
-5 - - V
=-3V, IC=-0.1A 100 - 320 -
- 150 - MHz
°C
µA
µA
µA
* : hFE rank / O : 100 ~ 200, Y : 160 ~ 320
KST-8001-002
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Electrical Characteristic Curves
Fig. 1 P
C
- Ta
Fig. 2 I
C - VBE
STB1132
Fig. 3 I
Fig. 5 h
C - VCE
- IC
FE
Fig. 4 V
CE(sat) - IC
KST-8001-002
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