Datasheet STB10NB20 Datasheet (SGS Thomson Microelectronics)



STB10NB20

N - CHANNEL200V - 0.30Ω - 10A - D2PAK

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

ST B10NB20 200 V < 0.40 Ω 10 A

■ TYPICALR

■ EXTREMELYHIGH dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ VERYLOW INTRINSIC CAPACITANCES

■ GATECHARGE MINIMIZED

■ FORTHROUGH-HOLE VERSIONCONTACT

DS(on)

= 0.30 Ω

SALESOFFICE

DESCRIPTION

Using the latest high voltage MESH OVERLAY



process, STMicroelectronis has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.

APPLICATIONS

■ HIGHCURRENT, HIGH SPEEDSWITCHING

■ SWITCHMODE POWER SUPPLIES (SMPS)

■ DC-AC CONVERTERS FOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE

3

1

D2PAK
TO-263

(suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Parameter Val u e Uni t

V

V

V

I

DM

P

dv/dt(

T

(•) Pulse width limited by safe operatingarea (1)ISD≤ 10A, di/dt ≤ 300A/µs,VDD≤ V

November 1998

Drain-source V o lt age (VGS=0) 200 V

DS

Drain- gate Vol ta ge (RGS=20kΩ)200V

DGR

Gate-s ource Voltage ± 30 V

GS

I

Drain Curr ent (c ont i nuous) at Tc=25oC10A

D

I

Drain Curr ent (c ont i nuous) at Tc= 100oC6A

D

(•) Drain Current ( pulsed) 40 A

Total Dissipation at Tc=25oC85W

tot

Derating Fact or 0.68 W/

1) Peak D iode Recove r y vo lt age s lope 5.5 V/ ns

St orage Temperature -65 to 150

stg

T

Max. O per ating Jun ct ion Temp erat ure 150

j

,Tj≤T

(BR)DSS

JMAX

o

C

o

C

o

C

1/8

STB10NB20

THERMAL DATA

R

thj-case

Rthj-a mb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m pe ra t ure For Soldering Purpos e

l

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

Single P ul se Avalanche E ner gy

AS

(starting T

=25oC, ID=IAR,VDD=50V)

j

max)

j

1.47

62.5

0.5

300

10 A

150 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS= 0 200 V

Break dow n Voltage

I

DSS

I

GSS

Zero Gate Voltage
Drain Cur re nt ( V

GS

Gat e- bod y L eakage
Current (V

DS

=0)

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 30 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA 345V
Sta t ic Drain -s ource On

VGS=10V ID= 5 A 0.30 0.40

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

10 A

VGS=10V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

C

C

Input Capac i t ance

iss

Out put Capacitance

oss

Reverse Tr ansfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=5 A 3 4 S

VDS=25V f=1MHz VGS= 0 470

135

22

650
190

30

µ
µA

Ω

pF
pF
pF

A

2/8

STB10NB20

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

d(on)

t

r

Turn-on Time
Rise Ti me

VDD=100V ID=5A
R

=4.7

G

Ω

VGS=10V

10
15

14
20

(see test circuit, figure 3)

Q
Q
Q

Tot al Gat e Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD= 160 V ID=10A VGS=10V 17

7.5

5.5

24 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

t

r(Voff)

t

t

Off-voltage Rise T ime
Fall T ime

f

Cross-over Time

c

VDD=160V ID=10A

=4.7 Ω VGS=10V

R

G

(see test circuit, figure 5)

10
20

8

11
14
28

SOURCEDRAINDIODE

Symbol Parameter Test Conditions Min. Typ. M ax. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed:Pulse duration= 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

10
40

(pulsed)

(∗)ForwardOnVoltage ISD=10 A VGS=0 1.5 V

Reverse Recovery

rr

Time
Reverse Recovery

rr

ISD=10 A di/dt = 10 0 A/µs

=50V Tj= 150oC

V

DD

(see test circuit, figure 5)

170

980
Charge
Reverse Recovery

11.5

Current

ns
ns

nC
nC

ns
ns
ns

A
A

ns

nC

A

SafeOperating Area ThermalImpedance

3/8

STB10NB20

OutputCharacteristics

Transconductance

TransferCharacteristics

Static Drain-sourceOn Resistance

Gate Charge vs Gate-sourceVoltage

4/8

CapacitanceVariations

STB10NB20

NormalizedGate ThresholdVoltage vs
Temperature

Source-drainDiode Forward Characteristics

NormalizedOn Resistancevs Temperature

5/8

STB10NB20

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuits For
ResistiveLoad

Fig. 2: Unclamped InductiveWaveform

Fig. 4: Gate Chargetest Circuit

Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times

6/8

TO-263 (D2PAK) MECHANICAL DATA

STB10NB20

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368
E 10 10.28 0.393 0.404
G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

P011P6/C

7/8

STB10NB20

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility forthe consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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1998 STMicroelectronics – Printed in Italy – All Rights Reserved

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