Datasheet STB10NA40 Datasheet (SGS Thomson Microelectronics)

STB10NA40

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on )

I

D

STB 10NA40 400 V < 0. 55 Ω 10 A

 TYPICALR
 ± 30V GATE TOSOURCE VOLTAGE RATING
 100% AVALANCHETESTED
 REPETITIVEAVALANCHEDATAAT100
 LOW INTRINSIC CAPACITANCES
 GATECHARGE MINIMIZED
 REDUCEDTHRESHOLD VOLTAGESPREAD
 THROUGH-HOLE I2PAK (TO-262)POWER

DS(on)

= 0.46 Ω

o

C

PACKAGEIN TUBE(SUFFIX ”-1”)

 SURFACE-MOUNTING D2PACK(TO-263)

POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

 HIGH CURRENT, HIGHSPEED SWITCHING
 SWITCHMODE POWER SUPPLIES(SMPS)
 DC-AC CONVERTERSFOR WELDING

EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE

3

2

1

I2PAK

TO-262

1

D2PAK
TO-263

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Val ue Uni t

V

V

V

I

DM

P

T

(•) Pulsewidth limitedby safe operating area

October 1995

Drain-source Voltage (VGS= 0) 400 V

DS

Drain- gate Voltage ( RGS=20kΩ) 400 V

DGR

Gate-s ource Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc=25oC10A

D

I

Drain Current (continuous) at Tc=100oC6.3A

D

(•) Drain Current (pulsed) 40 A

Tot al Dissipat ion at Tc=25oC 125 W

tot

Derat ing Fa ct or 1 W/
Sto rage Tem perature -65 t o 15 0

stg

T

Max. Operat ing Juncti on Temper at u r e 150

j

o
o

o

C
C
C

1/10

STB10NA40

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symb ol Param et er Max V al ue Uni t

I

AR

E

E

I

AR

Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
Therm al Resistanc e Case-sink Ty p
Maxim um Lead Tem p era t ure For So ldering Purpose

l

Avalanc h e Current , Repet it ive or Not -Repetiti ve
(pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T
Repetit ive Avalanche Energy

AR

=25oC, ID=IAR,VDD=50V)

j

(pulse width limited by T

max, δ <1%)

j

max, δ <1%)

j

Avalanc h e Current , Repet it ive or Not -Repetiti ve

=100oC, pulse wi dt h limited by Tjmax, δ <1%)

(T

c

1

62.5

0.5

300

10 A

500 mJ

20 mJ

6.3 A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

(BR)DSS

Drain-s ource

ID= 250 µ AVGS=0 400 V

Break down Vol t age

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gat e- body Leakage
Current (V

DS

=0)

=0)

V

= Max Rating

DS

= Max Rating x 0.8 Tc=125oC

V

DS

V

= ± 30 V ± 100 nA

GS

250

1000µAµA

ON (∗)

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

V

GS(t h)

R

DS(on)

I

D(on)

Gat e T hreshold Voltage VDS=VGSID= 250 µA 2.25 3 3.75 V
Sta t ic Drain-sour ce O n

Resistance

VGS= 10V ID=5A

=10V ID=5A Tc=100oC

V

GS

On S t ate Drain Current VDS>I

D(on)xRDS(on)max

10 A

0.46 0.55

1.1

VGS=10V

DYNAMIC

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

g

(∗)Forward

fs

Tra nsconductanc e

C

C

C

Input Capacitance

iss

Out put Capacitanc e

oss

Reverse Transfer

rss

Capacit an c e

VDS>I

D(on)xRDS(on)maxID

=5A 5 7.2 S

VDS=25V f=1MHz VGS= 0 1180

200

55

1600

260

75

Ω
Ω

pF
pF
pF

2/10

STB10NA40

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

d(on)

t

r

Turn-on Time
Rise Time

VDD= 200 V ID=5A

=47 Ω VGS=10V

R

G

(see tes t circuit, figure 3)

(di/dt)

Turn-on Current Slope VDD= 320 V ID=10A

on

=47 Ω VGS=10V

R

G

(see tes t circuit, f igure 5)

Q
Q
Q

Total Ga te Charge

g

Gat e- Source C har ge

gs

Gate-Drain Charge

gd

VDD=320V ID=10A VGS=10V 54

SWITCHING OFF

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

t

r(Voff)

t

Off-volt ag e Rise Time

t

Fall Time

f

Cross-over Time

c

VDD= 320 V ID=10A

=47 Ω VGS=10V

R

G

(see tes t circuit, figure 5)

SOURCEDRAIN DIODE

35

11550155

250 A/µs

75 nC

8

27

75
30

120

105

45

160

ns
ns

nC
nC

ns
ns
ns

Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t

I

SDM

I

SD

Source-drain C urr ent

(•)

Source-drain C urr ent

10
40

(pulsed)

(∗) For ward On Voltage ISD=10A VGS=0 1.6 V

V

SD

t

Q

Revers e Recovery

rr

Time
Revers e Recovery

rr

ISD=10A di/dt=100A/µs

=100V Tj=150oC

V

DD

(see tes t circuit, figure 5)

470

6.5

Charge

I

RRM

Revers e Recovery

27.5

Current

(∗) Pulsed: Pulse duration =300 µs,duty cycle 1.5 %
(•) Pulse widthlimitedby safeoperating area

Safe Operating Area ThermalImpedance

A
A

ns

µC

A

3/10

STB10NA40

Derating Curve

TransferCharacteristics

Output Characteristics

Transconductance

Static Drain-sourceOn Resistance

4/10

Gate Charge vs Gate-source Voltage

STB10NA40

CapacitanceVariations

NormalizedOn Resistance vs Temperature

NormalizedGate Threshold Voltage vs
Temperature

Turn-onCurrent Slope

Turn-offDrain-source VoltageSlope

Cross-overTime

5/10

STB10NA40

SwitchingSafe OperatingArea

Source-drainDiode Forward Characteristics

AccidentalOverload Area

Fig. 1: UnclampedInductive Load Test Circuit

6/10

Fig. 2: Unclamped Inductive Waveform

STB10NA40

Fig. 3: SwitchingTimes Test Circuits For

ResistiveLoad

Fig. 5: TestCircuit For InductiveLoad Switching
And DIodeRecoveryTimes

Fig. 4: GateCharge test Circuit

7/10

STB10NA40

TO-262 (I2PAK) MECHANICAL DATA

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B1 1.2 1.38 0.047 0.054
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 9 9.35 0.354 0.368

e 2.44 2.64 0.096 0.104

E 10 10.28 0.393 0.404

L 13.2 13.5 0.519 0.531

L1 3.48 3.78 0.137 0.149
L2 1.27 1.37 0.050 0.054

mm inch

8/10

C

A

A1

C2

B2

B

e

E

L1

L2

D

L

TO-263 (D2PAK) MECHANICAL DATA

STB10NA40

DIM.

MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181
A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036
B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023
C2 1.21 1.36 0.047 0.053

D 9 9.35 0.354 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.37 0.050 0.054
L3 1.4 1.75 0.055 0.068

mm inch

E

A

C2

L2

D

L

L3

B2

B

A1

C

G

9/10

STB10NA40

Information furnished is believed to be accurateand reliable. However,SGS-THOMSON Microelectronics assumesno responsability for the
consequences of use of such information nor forany infringement of patents or other rightsof third parties which may results fromits use. No
licenseis granted by implication orotherwise under any patent orpatent rightsof SGS-THOMSONMicroelectronics. Specifications mentioned
in this publicationare subjectto change without notice.This publication supersedes andreplaces all informationpreviously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorized foruseas criticalcomponents in life supportdevices or systems withoutexpress
writtenapproval of SGS-THOMSONMicroelectonics.

 1995 SGS-THOMSONMicroelectronics - All Rights Reserved

Australia- Brazil- France - Germany - Hong Kong -Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands-

Singapore- Spain- Sweden - Switzerland- Taiwan - Thailand - United Kingdom - U.S.A

SGS-THOMSONMicroelectronics GROUPOF COMPANIES

...

10/10