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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Repetitive-avalanche rated
Fast-switching R
Simple drive requirement I
BV
DS(ON)
D
DSS
G
D
S
TO-220
Description
The TO-220 package is widely preferred for commercial and industrial
applications. The SSM02N60P is well suited for DC/DC and AC/DC
converters in telecom, industrial and consumer applications.
G
Absolute Maximum Ratings
Symbol Units
V
DS
V
GS
=25℃ Continuous Drain Current, VGS @ 10V A
I
D@TC
=100℃ Continuous Drain Current, VGS @ 10V A
I
D@TC
I
DM
P
=25℃ Total Power Dissipation W
D@TC
Drain-Source Voltage V
Gate-Source Voltage V
Pulsed Drain Current
Linear Derating Factor 0.31
E
AS
I
AR
E
AR
T
STG
T
J
Single Pulse Avalanche Energy
Avalanche Current A
Repetitive Avalanche Energy mJ
Storage Temperature Range -55 to 150
Operating Junction Temperature Range ℃
Parameter Rating
600
± 20
2
1.26
1
6
39
2
130
2
2
-55 to 150
600V
8Ω
2A
D
S
A
W/℃
mJ
℃
Thermal Data
Symbol Value Unit
Rthj-c Thermal Resistance Junction-case Max. 3.2 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W
Rev.2.01 6/06/2003
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Parameter
Page 2
SSM02N60P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BV
ΔBV
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
DSS
DSS
/ΔT
Drain-Source Breakdown Voltage VGS=0V, ID=250uA 600 - - V
Breakdown Voltage Temperature Coefficient Reference to 25℃, I
j
=1mA - 0.6 - V/℃
D
Static Drain-Source On-Resistance VGS=10V, ID=1A - - 8 Ω
Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
Forward Transconductance VDS=20V, ID=1A - 0.2 - S
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Leakage VGS=-Total Gate Charge
3
VDS=600V, VGS=0V - - 10
VDS=480V, VGS=0V - - 100
± 20V ±100
ID=2A - 14 Gate-Source Charge VDS=480V - 2 Gate-Drain ("Miller") Charge VGS=10V - 8.5 Turn-on Delay Time
3
VDD=300V - 9.5 Rise Time ID=2A - 12 Turn-off Delay Time RG=10Ω,VGS=10V - 21 Fall Time RD=150Ω -9Input Capacitance VGS=0V - 155 -
Output Capacitance VDS=25V - 27 Reverse Transfer Capacitance f=1.0MHz - 14 -
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
I
S
I
SM
V
SD
Continuous Source Current ( Body Diode ) V
Pulsed Source Current ( Body Diode )
Forward On Voltage
3
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
3.Pulse width <
=25oC , VDD=50V , L=60mH , RG=25Ω , IAS=2A.
j
300us , duty cycle <2%.
1
=0V , VS=1.5V - - 2
D=VG
--6
Tj=25℃, IS=2A, VGS=0V - - 1.5 V
A
A
Rev.2.01 6/06/2003
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Page 3
SSM02N60P
I
1.5
V
=10V
TC=25oC
1
, Drain Current (A)
0.5
D
I
V
V
V
V
G
=6.0V
G
=5.5V
G
=5.0V
G
=4.5V
G
0.8
0.6
0.4
, Drain Current (A)
D
I
0.2
TC=150oC
V
V
V
V
V
=10V
G
=6.0V
G
=5.5V
G
=5.0V
G
=4.5V
G
0
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
0
0 5 10 15 20
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Normalized R
DS(ON)
2.8
=1A
D
2.4
VG=10V
2
1.6
1.2
0.8
0.4
1.2
1.1
(V)
DSS
1
Normalized BV
0.9
0.8
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Fig 3. Normalized BV
vs. Junction
DSS
0
-50 0 50 100 150
Tj , Junction Temperature (oC )
Fig 4. Normalized On-Resistance
Temperature vs. Junction Temperature
Rev.2.01 6/06/2003
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Page 4
SSM02N60P
2.4
2
1.6
1.2
0.8
, Drain Current (A)
D
I
0.4
0
25 50 75 100 125 150
Tc , Case Temperature ( oC )
50
40
30
(W)
D
P
20
10
0
0 50 100 150
Tc, Case Temperature ( oC )
Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation
Case Temperature
10
10us
1
100us
1ms
(A)
D
I
0.1
10ms
100ms
Tc=25oC
1
DUTY=0.5
)
thjc
0.2
0.1
0.1
0.05
P
0.02
SINGLE PULSE
0.01
Normalized Thermal Response (R
DM
t
Duty factor = t/T
Peak Tj = PDM x R
T
+ T
thjc
C
Single Pulse
0.01
1 10 100 1000 10000
VDS (V)
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance
Rev.2.01 6/06/2003
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Page 5
SSM02N60P
f
16
ID=2A
14
12
10
8
=320V
V
DS
=400V
V
DS
=480V
V
DS
1000
100
=1.0MHz
Ciss
C (pF)
6
, Gate to Source Voltage (V)
4
GS
V
2
Coss
Crss
0
02468101214161820
10
1 5 9 1317212529
VDS (V)
QG , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics
100
10
Tj = 150oC
(A)
S
I
1
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
T
= 25oC
j
VSD (V)
5
4
3
(V)
GS(th)
V
2
1
0
-50 0 50 100 150
Tj , Junction Temperature ( oC )
Fig 11. Forward Characteristic of Fig 12. Gate Threshold Voltage vs.
Reverse Diode Junction Temperature
Rev.2.01 6/06/2003
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Page 6
SSM02N60P
A
V
DS
R
D
R
G
+
10 V
-
D
G
S
V
DS
V
GS
TO THE
OSCILLOSCOPE
0.5x RATED V
DS
Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform
G
+
-
1~ 3 m
I
G
V
DS
TO THE
D
S
V
GS
I
D
OSCILLOSCOPE
0.8 x RATED V
DS
Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
90%
10%
V
GS
V
G
10V
t
Q
GS
d(on)tr
Q
G
Q
GD
Charge
t
d(off)
t
f
Q
Rev.2.01 6/06/2003
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