The STA533WF is a monolithic quad half-bridge
stage in multipower BCD technology. The device
can be used as a dual bridge or reconfigured, by
connecting pin CONFIG to pins VDD, as a single
bridge with double-current capability.
The device is designed for the output stage of a
stereo Full Flexible Amplifier (FFX™). It is
capable of delivering 10 W x 4 channels into 4-Ω
Table 1.Device summary
complementary DMOS output
dsON
STA533WF
PowerSSO36 package
with exposed pad down
loads with 10% THD at V
single-ended configuration.
It can also deliver 20 W + 20 W into 8-Ω loads
with 10% THD at V
= 18 V in BTL configuration
CC
or, in single parallel BTL configuration, 40 W into
a 4-Ω load with 10% THD at V
The input pins have a threshold proportional to
the voltage on pin VL.
The STA533WF comes in a 36-pin PowerSSO
package with exposed pad down (EPD).
35, 36VCCSIGPWR Filtering for regulator, this is an internally generated supply for V
SS
Doc ID 17658 Rev 23/15
Page 4
Electrical characteristicsSTA533WF
2 Electrical characteristics
Table 3.Absolute maximum ratings
SymbolParameterValueUnit
V
CC
V
Lmax
V
inputs
V
config
T
stg
Table 4.Recommended operating conditions
DC supply voltage (Pins 4, 7, 12, 15)23V
Voltage on pin 234.0V
Voltage on pins 25, 26, 29 to 32-0.3 to VL + 0.3V
Voltage on pins 24-0.3 to VDD + 0.3V
, TjStorage and junction temperature-40 to 150°C
SymbolParameterMinTypMaxUnit
V
CC
V
L
T
amb
Table 5.Thermal data
DC supply voltage (Pins 4, 7, 12, 15)5.0-18V
Input logic reference2.73.33.6V
Ambient temperature0-70°C
SymbolParameterMinTypMaxUnit
T
j-case
T
jSD
T
warn
t
hSD
Thermal resistance junction to case (thermal pad)--1.5°C/W
Thermal shut-down junction temperature-150-°C
Thermal warning temperature-130-°C
Thermal shut-down hysteresis-25-°C
Unless otherwise stated, the test conditions for Ta bl e 6 below are VL = 3.3 V, VCC = 18 V,
R
=8Ω, fSW = 384 kHz and T
L
Table 6.Electrical characteristics
SymbolParameterTest conditionsMinTypMaxUnit
P
R
I
dss
g
N
g
P
OUT
dsON
Output power in BTL modeTHD+N > 10%-20-W
Power P-channel/N-channel
MOSFET on resistance
Power P-channel/N-channel
leakage
Power P-channel R
matching
Power N-channel R
matching
Dt_sLow current dead time (static)see Figure 2-510ns
4/15Doc ID 17658 Rev 2
amb
dsON
dsON
= 25 °C.
= 1 A-180230mΩ
I
dd
---10μA
I
= 1 A95--%
dd
= 1 A95--%
I
dd
Page 5
STA533WFElectrical characteristics
Table 6.Electrical characteristics (continued)
SymbolParameterTest conditionsMinTypMaxUnit
Dt_d
t
d_ON
t
d OFF
t
r
t
f
V
IN-Low
V
IN-High
I
IN-H
I
IN-L
I
PWRDN-H
V
Low
V
High
High current dead time
(dynamic)
L = 22 μH, C = 470 nF
= 8 Ω, Idd = 2.0 A
R
L
see Figure 3
- 1020ns
Turn-on delay timeResistive load-4060ns
Turn-off delay timeResistive load-4060ns
Rise time
Fall time
Half-bridge input, low-level
voltage
Half-bridge input, high-level
voltage
High-level input currentVIN = V
Resistive load
see Figure 2
Resistive load
see Figure 2
-
-
L
-810ns
-810ns
/ 2 -
V
-
VL / 2 +
300 mV
-
-
L
300 mV
-
V
V
-1-μA
Low-level input currentVIN = 0.3 V-1 -μA
High level PWRDN pin input
current
Low logical state voltage
(pins PWRDN, TRISTATE)
High logical state voltage
(pins PWRDN, TRISTATE)
= 3.3 V-35-μA
V
L
= 3.3V--0.8V
V
L
V
= 3.3 V1.7--V
L
I
VCC-
PWRDN
I
FAULT
I
VCC-HiZ
I
VCC
I
OCP
V
UVP
t
pw_min
Supply current from VCC in
power down mode
V
= 0 V --10µA
PWRDN
Output current on pins
FAULT, THWARN with fault
= 3.3V -1-mA
V
pin
condition
Supply current from VCC in
3-state
V
TRISTATE
= 0 V-22-mA
Input pulse width
Supply current from VCC in
operation (both channels
switching)
= 50% duty,
switching frequency
= 384 kHz,
-50-mA
no LC filters
Overcurrent protection
threshold (short-circuit current
-3.04.0-A
limit)
Undervoltage protection
threshold
--3.54.3V
Output minimum pulse widthNo load70-150ns
Doc ID 17658 Rev 25/15
Page 6
Electrical characteristicsSTA533WF
Table 7.Logic truth table
Pin
PWRDN
Pin
TRISTATE
Inputs as per Figure 3Transistors as per Figure 3
Output mode
INxAINxBQ1Q2Q3Q4
00xxOffOffOffOffHi Z
1100OffOffOnOnDump
1101OffOnOnOffNegative
1110OnOffOffOnPositive
1111OnOnOffOffNot used
Test circuits
Figure 2.Test circuit
Low current dead time = MAX(DTr,DTf)
Duty cycle = 50%
INxY
gnd
+Vcc
OUTxY
OUTxY
R 8Ω
DTfDTr
+
-
Vcc
(3/4)Vcc
(1/2)Vcc
(1/4)Vcc
t
vdc = Vcc/2
D03AU1458
Figure 3.Current dead time test circuit
High Current Dead time for Bridge application = ABS(DTout(A)-DTin(A))+ABS(DTOUT(B)-DTin(B))
+V
CC
Duty cycle=ADuty cycle=B
DTin(A)
INxA
Duty cycle A and B: Fixed to have DC output current of Iout in the direction shown in figure
6/15Doc ID 17658 Rev 2
Q1
OUTxA
Q3
DTout(A)
Rload=8Ω
Iout
470nF
DTout(B)DTin(B)
22μ22μ
470nF470nF
Q2
OUTxB
Iout
Q4
INxB
D00AU1162_00
Page 7
STA533WFApplications information
3 Applications information
The STA533WF is a dual-channel H-bridge audio power amplifier that can deliver 20 W per
channel into 8 Ω with 10% THD at V
The STA533WF converts both FFX and binary-logic-controlled PWM signals into audio
power at the load. It includes a logic interface, integrated bridge drivers, high-efficiency
MOSFET outputs and thermal and short-circuit protection circuitry.
In FFX mode, two logic-level signals per channel are used to control the high-speed
MOSFET switches which drive the speaker load in a bridge configuration, according to the
damped ternary modulation operation.
In binary mode, both full-bridge and half-bridge modes are supported.
The STA533WF includes overcurrent and thermal protection as well as an undervoltage
lockout with automatic recovery. A thermal warning status is also provided.
Figure 4.Block diagram for FFX or binary modes
= 18 V with high efficiency.
CC
INL[1,2]
INR[1,2]
VL
PWRDN
TRISTATE
FAU LT
THWARN
Logic
interface
and
decode
Protection
circuit
Regulators
Left
H-bridge
Right
H-bridge
Figure 5.Block diagram for binary half-bridge mode
INL[1,2]
INR[1,2]
VL
PWRDN
TRISTATE
FAU LT
THWARN
Logic
interface
and
decode
Protection
circuit
Regulators
Left A
bridge
Left B
bridge
Right A
bridge
Right B
bridge
OUTPL
OUTNL
OUTPR
OUTNR
OUTPL
OUTNL
OUTPR
OUTNR
Logic interface and decode
The STA533WF power outputs are controlled using one or two logic-level timing signals. In
order to provide a proper logic interface, pin VL must have the same voltage as the PWM
input signal.
Doc ID 17658 Rev 27/15
Page 8
Applications informationSTA533WF
Protection circuits
The STA533WF includes protection circuitry for overcurrent and thermal overload
conditions. A thermal warning pin (THWARN) is activated low (open-drain MOSFET) when
the IC temperature exceeds 130 °C, which is in advance of the thermal shutdown protection.
When a fault condition is detected an internal fault signal acts to immediately disable the
output power MOSFETs, placing both H-bridges in the high-impedance state. At the same
time an open-drain MOSFET connected to pin FAULT is switched on.
There are two possible modes subsequent to activating a fault:
●Shutdown mode:
with pins FAULT (with pull-up resistor) and TRISTATE independent, an activated fault
disables the device, signalling low at pin FAULT.
The device may subsequently be reset to normal operation by toggling pin TRISTATE
from high to low and back to high using an external logic signal.
●Automatic recovery mode:
This is shown in the applications circuit in Figure 6 and Figure 7 on page 10.
Pins FAULT and TRISTATE are shorted together and connected to a time constant
circuit comprising R59 and C58.
An activated fault forces a reset on pin TRISTATE causing normal operation to resume
following a delay determined by the time constant of the circuit.
If the fault condition is still present this operation continues to repeat until the fault
condition is removed.
An increase in the time constant of the circuit produces a longer recovery interval.
Care must be taken in the overall system design so as not to exceed the protection
thresholds under normal operation.
Power outputs
The STA533WF power and output pins are duplicated to provide a low-impedance path for
the device bridged outputs. All duplicated power, ground and output pins must be connected
for reliable operation.
Pins PWRDN or TRISTATE should be used to set all MOSFETS to the high-impedance
state during power-up and until the logic power supply on pin VL has settled.
Parallel-output and high-current operation
When using FFX mode, the STA533WF outputs can be connected in parallel to increase the
output current capability. In this configuration the device can provide 40 W into 4 Ω.
This mode of operation is enabled with pin CONFIG connected to V
combined to give INLA = INLB and INRA = INRB, then the corresponding outputs can be
shorted together to give OUTLA = OUTLB and OUTRA = OUTRB.
The snubber RC network shown in the applications figures must be placed as close as
possible to the output pins. This reduces ringing, over- and undervoltage effects, and
improves the audio quality and EMI performance.
. The inputs must be
DD
8/15Doc ID 17658 Rev 2
Page 9
STA533WFApplications information
Supply decoupling capacitors
To meet the performance figures given in this datasheet the STA533WF power supply must
be adequately filtered.
For this purpose capacitors connected from pins VCC1 to GND1 and from VCC2 to GND2
must be placed as close as possible to the related IC pins.
For reliability and optimum performance the following capacitors are suggested:
●100-nF ceramic capacitor with lead length less than 2 mm, connected to the ground
plane and as close as possible to the GND pin
●1-uF X7R (low ESR) capacitors.
Pin GNDREG is used to filter the internal reference voltage V
; This pin must not be
DD
connected to other ground pins, it is an internally generated supply.
Pin VCCSIG is used to filter the internal reference voltage V
; This pin must not be
SS
connected to other supply pins, it is an internally generated supply.
Output filter
A passive 2nd-order filter is used on the STA533WF power outputs to reconstruct an analog
audio signal. The system performance can be significantly affected by the output filter
design and choice of passive components.
Filter designs for 4-Ω and 8-Ω loads are shown in the applications circuits below.
Applications circuits
Figure 6 shows a typical full-bridge circuit for supplying 20 W + 20 W into 8-Ω speakers with
10% THD when V
Figure 7 shows a single-BTL configuration capable of supplying 40 W into a 4-Ω load at
10% THD when V
STA309A + STA533WF demo board.
For both applications circuits a PWM modulator is required as driver.
= 18 V.
CC
= 19 V. This result was obtained with peak power for <1 s using the
CC
Doc ID 17658 Rev 29/15
Page 10
10/15Doc ID 17658 Rev 2
Figure 6.Applications circuit for stereo full-bridge configuration
Using the STA533WF mounted on a double-layer PCB having 2 copper ground areas of
3x3cm
2
and with 16 via holes the junction to ambient thermal resistance is approximately
24 °C/W in natural air convection.
Figure 8.Double-layer PCB with copper ground areas and 16 via holes
With the dissipated power within the device depending primarily on the supply voltage, the
load impedance and the output modulation level, the maximum estimated dissipated power,
Pdmax, for the STA533WF is:
4 W for 2 x 20 W into 8 Ω at 18 V
< 5 W for 2 x 10 W into 8 Ω + 1 x 20 W into 4 Ω at 18 V.
The figure below shows the power derating curve for the PowerSSO36 EPD package on
PCBs with copper areas of 2 x 2 cm
2
and 3 x 3 cm2.
Figure 9.Power derating curves for PCB used as heatsink
Pd (W)
8
7
6
5
4
Copper Area 3x3 cm
and via holes
TDA7491P
STA533WF
PSSO36
PowerSSO36
3
2
Copper Area 2x2 cm
and via holes
1
0
020406080100120140160
Tamb ( °C)
Doc ID 17658 Rev 211/15
Page 12
Package mechanical dataSTA533WF
5 Package mechanical data
The STA533WF comes in a 36-pin PowerSSO package with exposed pad down (EPD).
Figure 10 below shows the package outline and Ta bl e 8 gives the dimensions.
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
Table 8.PowerSSO36 EPD dimensions
Symbol
A2.15-2.470.085-0.097
A22.15-2.400.085-0.094
a10.00-0.100.000-0.004
b0.18-0.360.007-0.014
c0.23-0.320.009-0.013
D10.10-10.500.398-0.413
E7.40-7.600.291-0.299
e-0.5--0.020-
e3-8.5--0.335-
F-2.3--0.091-
G--0.10 --0.004
H10.10-10.500.398-0.413
h--0.40 --0.016
®
packages, depending on their level of environmental compliance. ECOPACK®
®
is an ST trademark.
Dimensions in mmDimensions in inches
MinTypMaxMinTypMax
k0-8 degrees0-8 degrees
L0.60-1.000.024-0.039
M-4.30--0.169-
N--10 degrees--10 degrees
O-1.20--0.047-
Q-0.80--0.031-
S-2.90--0.114-
T-3.65--0.144-
U-1.00--0.039-
X4.10-4.700.161-0.185
Y6.50 -7.10 0.256-0.280
12/15Doc ID 17658 Rev 2
Page 13
Doc ID 17658 Rev 213/15
Figure 10. PowerSSO36 EPD outline drawing
STA533WFPackage mechanical data
h x 45°
Page 14
Revision historySTA533WF
6 Revision history
Table 9.Document revision history
DateRevisionChanges
02-Jul-20101Initial release.
22-Jun-20112Updated Applications circuits on page 9
14/15Doc ID 17658 Rev 2
Page 15
STA533WF
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