Datasheet ST1900C52R0L, ST1900C52R0, ST1900C50R3L, ST1900C50R3, ST1900C50R2L Datasheet (International Rectifier)

D-406

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

1940A

PHASE CONTROL THYRISTORS Hockey Puk Version

ST1900C..R SERIES

D-407

Bulletin I25197/A

Features

Double side cooling
High surge capability
High mean current
Fatigue free

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

I

T(AV)

1625 A

@ T

C

80 °C

I

T(AV)

1940 A

@ T

hs

55 °C

I

T(RMS)

3500 A

@ T

hs

25 °C

I

TSM

@ 50Hz 27500 A
@

60Hz 29000 A

I

2

t @ 50Hz 3780 KA2s

@

60Hz 3490 KA2s

V

DRM/VRRM

4500 to 5200 V

t

q

typical 500 µs

T

J

max. 125 °C

Parameters ST1900C..R Units

Major Ratings and Characteristics

(R-PUK)

ST1900C..R Series

2222222222222

12

D-408

Voltage V

DRM/VRRM

, max. repetitive V

RSM

, maximum non- I

DRM/IRRM

max.

Type number Code peak and off-state voltage repetitive peak voltage

@ TC = 125°C

V V mA

45 4500 4600
46 4600 4700
48 4800 4900
50 5000 5100
52 5200 5300

ELECTRICAL SPECIFICATIONS

Voltage Ratings

ST1900C..R 250

I

T(AV)

Max. average on-state current 1625 (1030) A
@ Case temperature 80 °C

I

T(AV)

Max. average on-state current 1940 (800) A
@ Heatsink temperature 55 (85) °C

I

T(RMS)

Max. RMS on-state current 3500 A DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one-cycle No voltage
non-repetitive surge current reapplied

50% V

RRM

reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing No voltage Initial TC = 125°C

reapplied
50% V

RRM

reapplied

V

T(TO)

Max. value of threshold voltage 1.4 V TJ = TJ max.

r

t

Max. value of on-state slope
resistance

V

TM

Max. on-state voltage 2.1 V Ipk= 2900A, TC = 25°C

I

L

Typical latching current 300 mA TJ = 25°C, VD = 5V

Parameter ST1900C..R Units Conditions

On-state Conduction

A

KA2s

0.31 TJ = TJ max.

mΩ

180° conduction, half sine wave
double side (single side [anode side]) cooled

Parameter ST1900C..R Units Conditions

Switching

di/dt Max. repetitive 50Hz (no repetitive) From 67% V

DRM

to 1000A gate drive 20V, 10Ω, tr = 0.5µs

rate of rise of turned-on current to 1A, T

J

= TJ max.

Gate drive 30V, 15Ω,

Vd = 67% V

DRM, TJ

= 25°C

Rise time 0.5µs
I

T

= 1000A, tp = 1ms, TJ = TJ max, V

RM

= 50V,

dI

RR

/dt = 20A/µs, V

DR =

67% V

DRM, dVDR

/dt = 8V/µs linear

150 (300) A/µs

µs

t

q

Typical turn-off time 500

t

d

Maximum delay time 2.5

t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms

27500
29000
22000
23500

3780
3490
2420
2290

ST1900C..R Series

D-411

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 3 - On-state Power Loss Characteristics

Fig. 4 - On-state Voltage Drop Characteristics

ST1900C..R Series

D-412

Fig. 7 - Stored Charged

Fig. 8 - Thermal Impedance Z

thJ-C

Characteristics

Fig. 9 - Gate Characteristics

ST1900C..R Series

23

D-4093333

dv/dt Maximum linear rate of rise of

off-state voltage

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Blocking

500 V/µs TJ = TJ max. to 67% rated V

DRM

Parameter ST1900C..R Units Conditions

250 mA TJ = 125°C rated V

DRM/VRRM

applied

Triggering

PGMMaximum peak gate power 150 tp = 100µs
P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 30 A Anode positive with respect to cathode

V

GM

Max. peak positive gate voltage 30 V Anode positive with respect to cathode

-V

GM

Max. peak negative gate voltage 0.25 V Anode negative with respect to cathode

I

GT

Maximum DC gate current
required to trigger

V

GT

Maximum gate voltage required
to trigger

Parameter ST1900C..R Units Conditions

W

400 mA TC = 25°C, V

DRM

= 5V

4 V T

C

= 25°C, V

DRM

= 5V

VGDDC gate voltage not to trigger 0.25 V TC = 125°C

Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V

DRM

anode-to-cathode applied

180° 0.0010 0.0010 T

J

= TJ max.

120° 0.0017 0.0017 K/W

60° 0.0044 0.0044

∆R

thJ-C

Conduction

(The following table shows the increment of thermal resistence R

thJ-C

when devices operate at different conduction angles than DC)

Conduction angle Single side Double side Units Conditions

TJ max. Max. operating temperature 125 On-state (conducting)
T

stg

Max. storage temperature range -55 to 125

R

thJ-C

Thermal resistance, junction 0.019 DC operation single side cooled
to case 0.0095 DC operation double side cooled

R

th(C-h)

Thermal resistance, case 0.004 Single side cooled
to heatsink 0.002 Double side cooled

F Mounting force ± 10%

wt Approximate weight 1600 g

Case style (R-PUK) See Outline Table

Parameter ST1900C..R Units Conditions

Thermal and Mechanical Specification

°C

Clamping force 43KN with
mounting compound

43000

(4400)

N

(Kg)

K/W

K/W

ST1900C..R Series

2222222222222

12

D-410

Ordering Information Table

Device Code

51

2 3

4

ST 190 0 C 52 R 1

768

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - R = Puk Case
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

8 - Critical dv/dt: None = 500V/µsec (Standard selection)

L = 1000V/µsec (Special selection)

Outline Table

(R-PUK)

All dimensions in millimeters (inches)

112.5 (4.4) DIA. MAX.

73.2 (2.9) DIA. MAX.
TWO PLACES

GATE

1.5 (0.06) DIA.

37.7 (1.5) M A X.

ANODE

3.7 (0.15) DIA. NOM. X

2.1 (0.1) DEEP MIN.
BOTH ENDS

CATHODE

HOLE 1.5 (0.06)
DIA. MAX.

4.76 (0.2)

20° ± 5°

6

.

3

(

0

.

2

4

)